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    onsemi NDT452P

    MOSFET P-CH 30V 3A SOT-223-4
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    DigiKey NDT452P Digi-Reel 1
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    NDT452P Reel 2,500
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    Quest Components NDT452P 20
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    Fairchild Semiconductor Corporation NDT452P

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    Quest Components NDT452P 855
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    NDT452P 616
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    National Semiconductor Corporation NDT452P

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    NDT452P Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NDT452P Fairchild Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDT452P Fairchild Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDT452P National Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original PDF
    NDT452P Toshiba Power MOSFETs Cross Reference Guide Original PDF
    NDT452PJ23Z Fairchild Semiconductor P-Channel Enhancement Mode Field Effect Transistor Original PDF

    NDT452P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NDT452P

    Abstract: No abstract text available
    Text: September 1996 NDT452P P-Channel Enhancement Mode Field Effect Transistor General Description Features -3A, -30V. RDS ON = 0.18Ω @ VGS = -10V. Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		PDF NDT452P NDT452P

    c3 SOT-223

    Abstract: CBVK741B019 F63TNR F852 NDT452P PN2222A
    Text: September 1996 NDT452P P-Channel Enhancement Mode Field Effect Transistor General Description Features -3A, -30V. RDS ON = 0.18Ω @ VGS = -10V. Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		PDF NDT452P c3 SOT-223 CBVK741B019 F63TNR F852 NDT452P PN2222A

    NDT452P

    Abstract: No abstract text available
    Text: N September 1996 NDT452P P-Channel Enhancement Mode Field Effect Transistor General Description Features Power SOT P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored


    Original     		PDF NDT452P NDT452P

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original     		PDF

    LM2975

    Abstract: l46b voltage regulator l46A lm2975ai-x.x L45A lm297 LM2975AI-X LP2975AIM
    Text: LP2975 www.ti.com SNVS006E – MAY 2004 – REVISED JUNE 2011 MOSFET LDO Driver/Controller Check for Samples: LP2975 FEATURES DESCRIPTION • • • • • • A high-current LDO regulator is simple to design with the LP2975 LDO Controller. Using an external P-FET,


    Original     		PDF LP2975 SNVS006E LP2975 LM2975 l46b voltage regulator l46A lm2975ai-x.x L45A lm297 LM2975AI-X LP2975AIM

    IRF9310

    Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional


    Original     		PDF device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution

    12V FAN CONTROL BY USING op-amp

    Abstract: 2SA968 ADM1028 ADM1028ARQ BD136 DT452P MBT3904 RQ-16 T452
    Text: a Low Cost PC Temperature Monitor and Fan Control ASIC ADM1028 Preliminary Technical Data FEATURES GENERAL DESCRIPTION The ADM1028 is a low-cost temperature monitor and fan controller for microprocessor-based systems. The temperature of a remote sensor diode may be measured, allowing monitoring of processor temperature in single


    Original     		PDF ADM1028 ADM1028 16-Pin RQ-16) MO-137 12V FAN CONTROL BY USING op-amp 2SA968 ADM1028ARQ BD136 DT452P MBT3904 RQ-16 T452

    IC 4090

    Abstract: data sheet IC 4090
    Text: a Lithium-Ion Battery Charger ADP3820 FUNCTIONAL BLOCK DIAGRAM FEATURES ؎1% Total Accuracy 630 ␮A Typical Quiescent Current Shutdown Current: 1 ␮A Typical Stable with 10 ␮F Load Capacitor 4.5 V to 15 V Input Operating Range Integrated Reverse Leakage Protection


    Original     		PDF OT-23-6 ADP3820 ADP3820 C2986a IC 4090 data sheet IC 4090

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    LM2975

    Abstract: LM297 L45A 6100B RSC11 fpg 12v L47B ic MARKING FZ LP2975 LP2975AIMMX-12
    Text: LP2975 MOSFET LDO Driver/Controller General Description Features A high-current LDO regulator is simple to design with the LP2975 LDO Controller. Using an external P-FET, the LP2975 will deliver an ultra low dropout regulator with extremely low quiescent current.


    Original     		PDF LP2975 LP2975 LM2975 LM297 L45A 6100B RSC11 fpg 12v L47B ic MARKING FZ LP2975AIMMX-12

    diode b26

    Abstract: micro SD Card connector sot23 a36 8q diode sot23 sn74ls574 AD27 AD29 AD30
    Text: P3V VIO P2 P1 PCI_5V A1 1 P3V VIO VIO A2 2 +12V_PCI A3 3 TCK TDO TDI X7 1 A8 8 A9 9 X11 A10 10 1 X12 X10 C55 2 7 B7 1 X50 TOOL_130 TOOL_130 1 C26 C20 0.1 0.1 CC0805 2 CC0805 2 1 1 CC0805 8 B8 1 9 B9 1 C3 C1 0.01 0.01 CC0805 2 2 CC0805 10 B10 A11 11 11 B11


    Original     		PDF CC0805 CR0805 RC1206 NDT452P diode b26 micro SD Card connector sot23 a36 8q diode sot23 sn74ls574 AD27 AD29 AD30

    surface mount transistor A55

    Abstract: surface mount transistor A48 c60 equivalent CR0805 irf150 rd sot23 sn74ls574 sot223, 31 64 sot23 a36 AD30
    Text: P3V VIO P2 P1 NDA # VDD_PCI A1 1 P3V VIO VIO 1 B1 VDD_PCI A2 2 +12V_PCI A3 3 TCK A4 4 2 B2 TOOL1 3 B3 TMS X8 TDI X9 1 TDO 1 1 4 B4 A6 6 X7 A8 8 A9 9 X11 A10 10 1 X12 1 X10 7 B7 1 X50 12 B12 A13 13 13 B13 A14 14 14 B14 GNT# 18 B18 REQ# A19 19 19 B19 AD30 AD26


    Original     		PDF CC0805 CR0805 NDT451AN CR1206 OT223 LM393M IRF150 surface mount transistor A55 surface mount transistor A48 c60 equivalent CR0805 irf150 rd sot23 sn74ls574 sot223, 31 64 sot23 a36 AD30

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    LM2975

    Abstract: lm297 L45A l45b l47a l46A voltage regulator l46A L46B l47B LP2975AIMM-12
    Text: LP2975 MOSFET LDO Driver/Controller General Description Features A high-current LDO regulator is simple to design with the LP2975 LDO Controller. Using an external P-FET, the LP2975 will deliver an ultra low dropout regulator with extremely low quiescent current.


    Original     		PDF LP2975 LP2975 sens959 LM2975 lm297 L45A l45b l47a l46A voltage regulator l46A L46B l47B LP2975AIMM-12

    B38 SMD Transistor

    Abstract: 822273-1 ZTR32 AM79C874VC AM79C874 schematic capacitor COG xr7 pe69012 smd LM393 ZTR11 Kemet C0805C104K5RAC
    Text: 5 +3VR +3VR C27 0.01UF CC0805 4 +3VR C38 0.01UF CC0805 +3VR C29 0.01UF CC0805 C21 0.01UF CC0805 +3VR +3VR C20 0.1UF CC0805 +3VR C32 0.1UF CC0805 3 2 +3VR C37 0.1UF CC0805 1 +3VR EEDI/LED0# LED2#/SRDCLK C14 0.1UF CC0805 EEDI/LED0# LED2#/SRDCLK R1 1.5K CR0805


    Original     		PDF CC0805 CR0805 B38 SMD Transistor 822273-1 ZTR32 AM79C874VC AM79C874 schematic capacitor COG xr7 pe69012 smd LM393 ZTR11 Kemet C0805C104K5RAC

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    Untitled

    Abstract: No abstract text available
    Text: Lithium-Ion Battery Charger ADP3820 a FUNCTIONAL BLOCK DIAGRAM FEATURES ؎1% Total Accuracy 630 ␮A Typical Quiescent Current Shutdown Current: 1 ␮A Typical Stable with 10 ␮F Load Capacitor 4.5 V to 15 V Input Operating Range Integrated Reverse Leakage Protection


    Original     		PDF ADP3820 OT-23-6 ADP3820

    sn74ls574

    Abstract: CR0805 MOTOROLA 136 DPAK MOTOROLA LM393M B52 transistor B58 SO8 surface mount transistor A55 AD27 AD29 AD30
    Text: P3V VIO P1 P2 PCI_5V A1 1 P3V +12V_PCI A3 3 TCK TDO A5 5 5 B5 A6 6 6 B6 INTA# X7 1 A8 8 A9 9 X11 1 A10 10 X12 X10 X50 1 AD28 A23 23 AD26 AD20 28 B28 29 B29 AD19 32 B32 A33 33 C_BE2# 33 B33 IRDY# 38 B38 43 B43 AD15 C_BE1# 44 B44 AD14 45 B45 A45 45 A46 46 46 B46


    Original     		PDF CC0805 LM393M RC0805 sn74ls574 CR0805 MOTOROLA 136 DPAK MOTOROLA LM393M B52 transistor B58 SO8 surface mount transistor A55 AD27 AD29 AD30

    surface mount transistor A48

    Abstract: CR0805 diode b26 8q diode sot23 AD11 AD30 MAGIC R30
    Text: P3V VIO P2 P1 NDA # VDD_PCI A1 1 P3V VIO VIO 1 B1 VDD_PCI A2 2 +12V_PCI A3 3 TCK A4 4 2 B2 TOOL1 3 B3 TMS X8 TDI X9 1 TDO 1 1 4 B4 A6 6 X7 A8 8 A9 9 X11 A10 10 C20 10 16V 2 7227 6 B6 INTA# A7 7 1 X12 1 X10 7 B7 1 X50 1 1 C19 5 B5 A5 5 1 C54 10 16V 2 7227 C53


    Original     		PDF CC0805 AD250805 CR0805 NDT451AN OT223 surface mount transistor A48 CR0805 diode b26 8q diode sot23 AD11 AD30 MAGIC R30

    fet 30 f 124

    Abstract: fpg 12v 400E 6100B LP2975 MUA08A NDP6020P NDT452P fet to 220 ECA-1AFQ181
    Text: ご注意：この日本語データシートは参考資料として提供しており内容 が最新でない場合があります。製品のご検討およびご採用に際 しては、必ず最新の英文データシートをご確認ください。


    Original     		PDF LP2975 LP2975 12V5V3 MUA08A DS10003 fet 30 f 124 fpg 12v 400E 6100B MUA08A NDP6020P NDT452P fet to 220 ECA-1AFQ181

    NDT452P

    Abstract: No abstract text available
    Text: National Semiconductor" June 1996 NDT452P P-Channel Enhancement Mode Fi Effect Transistor Features General Description These P-Channel enhancem ent m od e p o w e r field effect transistors are produced using N ational's proprietary, h ig h cell density, DMOS tech no lo g y.


    OCR Scan     		PDF NDT452P 125-c b501130 NDT452P

    Untitled

    Abstract: No abstract text available
    Text: September 1996 N ational S e m i c o n d u c t o r 1' NDT452P P-Channel Enhancement Mode Field Effect Transistor G eneral Description Features Power SOT P-Channel enhancem ent m ode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDT452P NDT452P OT-223 34bTb74

    Untitled

    Abstract: No abstract text available
    Text: ß Nati onal Semi con d uctor' S e ptem be r 1 996 N D T452P P-Channel Enhancement Mode Field Effect Transistor Features General Description Pow er SO T P-Channel e n h a n c e m e n t m o d e p o w e r fie ld effect tra n s is to rs are pro d u ce d using N a tio n a l's


    OCR Scan     		PDF T452P

    NDT453N

    Abstract: H834P FDC6321C NDC652P 6322L NDH8501N FDC6303N
    Text: Discrete Power and Signal Technologies Fairchild S e m ic o n d u c to r Selection G uides Surface Mount Power MOSFETs Part Num ber v„s VI Max (ß ^DSfoN} 4.5V 10V In (A) 2.7V PD (W | Part Num ber Remarks | M ax ( fi) V « v „s IV) 10V 4.5V P, |W |


    OCR Scan     		PDF T-223 NDC631N FDC6303N" FDC6301N* NDC651N NDC7002N NDT455N NDT453N NDT451AN NDT451N H834P FDC6321C NDC652P 6322L NDH8501N FDC6303N