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    C55B Search Results

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    C55B Price and Stock

    Switchcraft Conxall C55BX

    CONN JACK 6.35MM PNL MNT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C55BX Bulk 400 1
    • 1 $19.21
    • 10 $16.82
    • 100 $15.0551
    • 1000 $13.80912
    • 10000 $13.80912
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    Mouser Electronics C55BX 391
    • 1 $18.57
    • 10 $16.53
    • 100 $14.4
    • 1000 $13.67
    • 10000 $13.67
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    Verical C55BX 139 3
    • 1 -
    • 10 $23.7626
    • 100 $18.305
    • 1000 $18.305
    • 10000 $18.305
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    Onlinecomponents.com C55BX 144
    • 1 $20.98
    • 10 $16.31
    • 100 $13.9
    • 1000 $13.08
    • 10000 $13.08
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    TTI C55BX Bulk 500
    • 1 -
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    Master Electronics C55BX 144
    • 1 $20.98
    • 10 $16.31
    • 100 $13.9
    • 1000 $13.08
    • 10000 $13.08
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    Sager C55BX 500
    • 1 -
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    • 1000 $17.92
    • 10000 $17.92
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    ABLIC Inc. S-812C55BPI-C5JTFU

    IC REG LINEAR 5.5V 75MA SNT6A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey S-812C55BPI-C5JTFU Cut Tape 84 1
    • 1 $1.16
    • 10 $1.034
    • 100 $0.9812
    • 1000 $0.9812
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    Avnet Americas S-812C55BPI-C5JTFU Reel 16 Weeks 5,000
    • 1 $0.47
    • 10 $0.47
    • 100 $0.47
    • 1000 $0.47
    • 10000 $0.47
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    Mouser Electronics S-812C55BPI-C5JTFU
    • 1 -
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    • 10000 $0.433
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    Chip1Stop S-812C55BPI-C5JTFU Cut Tape 100
    • 1 -
    • 10 $0.406
    • 100 $0.337
    • 1000 $0.337
    • 10000 $0.337
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    CoreStaff Co Ltd S-812C55BPI-C5JTFU 100
    • 1 $0.21
    • 10 $0.204
    • 100 $0.196
    • 1000 $0.195
    • 10000 $0.195
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    Murata Manufacturing Co Ltd LXDC55BAAC-158

    DC DC CONVERTER 1.8V 5W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LXDC55BAAC-158 Cut Tape 25 1
    • 1 $4.3
    • 10 $4.172
    • 100 $4.0496
    • 1000 $4.0496
    • 10000 $4.0496
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    LXDC55BAAC-158 Digi-Reel 1
    • 1 $4.3
    • 10 $4.172
    • 100 $4.0496
    • 1000 $4.0496
    • 10000 $4.0496
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    Infineon Technologies AG FS13MR12W2M1HC55BPSA1

    LOW POWER EASY
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    DigiKey FS13MR12W2M1HC55BPSA1 Tray 15 1
    • 1 $246.68
    • 10 $246.68
    • 100 $222.36166
    • 1000 $222.36166
    • 10000 $222.36166
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    Avnet Americas FS13MR12W2M1HC55BPSA1 Tray 15 16 Weeks 15
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    Mouser Electronics FS13MR12W2M1HC55BPSA1 6
    • 1 $246.67
    • 10 $231.03
    • 100 $222.34
    • 1000 $222.34
    • 10000 $222.34
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    Newark FS13MR12W2M1HC55BPSA1 Bulk 13 1
    • 1 $257.58
    • 10 $246.7
    • 100 $241.25
    • 1000 $241.25
    • 10000 $241.25
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    Chip1Stop FS13MR12W2M1HC55BPSA1 14
    • 1 $232.05
    • 10 $224
    • 100 $224
    • 1000 $224
    • 10000 $224
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    SL Power Electronics GPC55B

    AC/DC CNVRTR 5V 12V -5V -12V 55W
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    DigiKey GPC55B Bulk
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    C55B Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    C55B Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    C55B Unknown Short Form Datasheet and Cross Reference Data Short Form PDF

    C55B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BRIGHT LED ELECTRONICS CORP. BS-C55BJRI SINCE 1981 ● Features : 1. 0.56 inch 14.20mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.


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    PDF BS-C55BJRI BS-C55BJRI

    Untitled

    Abstract: No abstract text available
    Text: BRIGHT LED ELECTRONICS CORP. BS-C55BJRI-B SINCE 1981 ● Features : 1. 0.56 inch 14.20mm Digit Height. 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity.


    Original
    PDF BS-C55BJRI-B BS-C55BJRI-B

    siemens 6XV1-830-0AH10

    Abstract: clifton resolver thermocouple type K krupp PIC900 A52 opto sensor inductosyn 11brw-300 Siemens 9-pin sub-D pinout RD2 earth leakage relay Balluff absolute encoder
    Text: PiC900 Hardware Manual Version 13.0 Giddings & Lewis Controls, Measurement and Sensing NOTE Progress is an ongoing commitment at Giddings & Lewis. We continually strive to offer the most advanced products in the industry; therefore, information in this document is subject to change without


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    PDF PiC900 120/240V PiC9041/9043 PiC94X N1-11, N1-12 siemens 6XV1-830-0AH10 clifton resolver thermocouple type K krupp PIC900 A52 opto sensor inductosyn 11brw-300 Siemens 9-pin sub-D pinout RD2 earth leakage relay Balluff absolute encoder

    MT339

    Abstract: T13631 IPC-D-275 Design standard for Rigid Printed Boards and Rigid Printed Board Assemblies
    Text: * Please visit the product pages on our website for the most up-to-date product information ABOUT SWITCHCRAFT, INC. Switchcraft, Inc. was established in 1946 to manufacture jacks, plugs and switches, from its original plant located on West Diversey Street in Chicago. The company moved


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    PDF 000-square-foot YEF04 YEF05 YEF08 YMT332A. YMT332B. YMT334B. Z21248. Z28248. Z51248. MT339 T13631 IPC-D-275 Design standard for Rigid Printed Boards and Rigid Printed Board Assemblies

    DM9 normally closed

    Abstract: SMC D-A93 smc - d-m9p d-f9pwv D-F9nW CD-P11 A96V SMC D-M9nWl D-M9PL CD-P12
    Text: CAT.EUS20-184 A -UK ISO Standard [ISO 21287] Compact Cylinder Series C55 ISO Standard [ISO 21287] Compact Cylinder Series C55 ø20, ø25, ø32, ø40, ø50, ø63 How to Order Without auto switch C55 B 20 10 With auto switch CD55 B 20 10 M9B S Number of auto switches


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    PDF EUS20-184 SLO-8360 DM9 normally closed SMC D-A93 smc - d-m9p d-f9pwv D-F9nW CD-P11 A96V SMC D-M9nWl D-M9PL CD-P12

    RCA SK CROSS-REFERENCE

    Abstract: LED Clock Display 94hb JP012S34B EHCAT62 WIRING diagram USB to rca CABLE MARKING C7F MIL-P-642 RF BASED HOME security SYSTEM ppt TT8642 mil spec relay catalog
    Text: ABOUT SWITCHCRAFT, INC. Switchcraft, Inc. was established in 1946 to manufacture jacks, plugs and switches, from its original plant located on West Diversey Street in Chicago. The company moved to a larger facility at 1328 North Halsted Street in 1948, and


    Original
    PDF 000-square-foot YEF04 YEF05 YEF08 YMT332A. YMT332B. YMT334B. Z21248. Z28248. Z51248. RCA SK CROSS-REFERENCE LED Clock Display 94hb JP012S34B EHCAT62 WIRING diagram USB to rca CABLE MARKING C7F MIL-P-642 RF BASED HOME security SYSTEM ppt TT8642 mil spec relay catalog

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR H Y M 5 8 1 O O O A S e rie s 1M x 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000A is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.2^uF decoupling capacitor Is mounted for each DRAM.


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    PDF HYM581000A HY514400 HYM581000AM 50nYCLE 1BB03-20-MAY93 061MAX.

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM536400B Series SEMICONDUCTOR 4M X 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536400B is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of nine HY5116400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0 .2 2ftF decoupling capacitor is mounted for each DRAM.


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    PDF HYM536400B 36-bit HY5116400 HYM536400BM/BLM HYM536400BMG/BLMG 1CE05-00-MAY93

    Untitled

    Abstract: No abstract text available
    Text: KM44C4003A, KM44C4103A CMOS DRAM 4 M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode Quad C 5 5 DRAMs. Fast Page Mode offers high speed random access of memory cells within the. same row. Refresh cycle 2K Ref. or 4K Ref. , access


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    PDF KM44C4003A, KM44C4103A C55-before-ES5

    kmm366f410b

    Abstract: No abstract text available
    Text: KMM366F400BK KMM366F410BK DRAM MODULE KMM366F400BK & KMM366F410BK EDO Mode without buffer 4Mx64 DRAM DIMM based on 4Mx4, 4K & 2K Refresh, 3.3V G EN ERA L D ESCRIPTIO N FEATURES The Samsung KMM366F40 1 OBK is a 4M bit x 64 Dynamic RAM high density memory module. The


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    PDF KMM366F400BK KMM366F410BK KMM366F400BK KMM366F410BK 4Mx64 KMM366F40 300mil 168-pin kmm366f410b

    uPD23C4000

    Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A


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    PDF 64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000

    Untitled

    Abstract: No abstract text available
    Text: SwitchcrafY 1 / 4 ” SHIELDED PHONE JACKS, SF-Jacks SHORT FRAME JACKS, MINIATURE PHONE JACKS SWITCHCRAFT, INC. 5555 N. Elston Ave, • C hicago, II 60630 • 773 792-2700 • FAX: 773 792-2129 • www.switchcraft.com 1/ 4 " SHIELDED PHONE JACKS V - V 6 - 5 2 THREAD


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    PDF CN12A

    CN12B

    Abstract: CN12A Phone Jack - O
    Text: IDS 1/4" SHIELDED PHONE JACKS 3/ 8 -3 2 TH REA D 3 / 8 - 3 2 HEX. LOCXNUT C IS .M ] OliLW ASHER 7. I 4 [ 6 J 51 CN12A Shield is assembled as part of the jack; cover “snaps” into place. Shield is designed for Hi Z circuits. Mounting is through a 3/8" diameter hole in chassis/panel up to


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    PDF CN12A 0CN12A JJ-095, M641/14-1 CN12B Phone Jack - O

    hy5118164b

    Abstract: No abstract text available
    Text: “H Y U N D A I HY5118164B Series 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5118164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HV5118164B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


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    PDF HY5118164B 16-bit 16-bit. HV5118164B 12Cjj^ Q004fiBS 1AD58-10-MAY95

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 32 Mega Byte KMM5368103AK/AKG Fast Page Mode 8Mx36 DRAM SIMM, 2K Refresh, 5V Using 16M Quad CAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5368103AK is a 8M bit x 36 Dynamic RAM high density memory module using Parity with 16M Quad CAS DRAM. The Samsung


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    PDF KMM5368103AK/AKG 8Mx36 KMM5368103AK 24-pm 20-pin 72-pin

    SP 1191

    Abstract: MT4C4256 TNC 24 mk 2 US Electric 45 U-RAI MT42C4064 TE55
    Text: JAM 2 8 M IC R O N • MT42C4255 IICHNOKX.Y »NC VRAM 256K X 4 DRAM with 512 X 4 SAM FEATURES Industry standard pin out, timing and functions High performance CMOS silicon gate process Single +5V ±10% power supply Inputs and outputs are fully TTL and CMOS


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    PDF MT42C4255 512x4 512-cycle 275mW SP 1191 MT4C4256 TNC 24 mk 2 US Electric 45 U-RAI MT42C4064 TE55

    Untitled

    Abstract: No abstract text available
    Text: ‘H Y U N D A I SEMICONDUCTOR H Y M 536200 Series 2M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536200 is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY514400 20/26 pin SOJ and eight HY531000 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^«F decoupling


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    PDF 36-bit HYM536200 HY514400 HY531000 HYM536200M HYM536200MG 1CD02-20-MAY93 4b750Ã

    Untitled

    Abstract: No abstract text available
    Text: ><M y i l u n fi i H Y 5 1 V 4 4 1 O B S e r ie s 1M x 4-bit CMOS DRAM with Write-Per-Bit PREUMINARY DESCRIPTION The HY51V4410B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit with function of Write-Per-Bit. The HY51V4410B utilizes Hyundai's CMOS silicon gate process technology as well as advanced


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    PDF HY51V4410B 1AC14-00-MA HY51V4410BJ HY51V4410BU HY51V4410BSU HY51V441OBT HY51V4410BLT

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 51V 18160B S eries 1M x 16-bit CM OS DRAM with 2CAS DESCRIPTION The HY51V18160B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V18160B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques


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    PDF 18160B 16-bit HY51V18160B 16-bit. 4b75Qfl8 1AD56-10-MAY9S HY51V18160BJC

    pw3sd

    Abstract: No abstract text available
    Text: - H Y U N D A HY514403B Series I 1M x 4-bit CMOS DRAM with 4CAS DESCRIPTION The HY514403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO) controls DQO,


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    PDF HY514403B 1AC15-10-MAY95 HY514403BJ HY514403BLJ HY514403BSLJ pw3sd

    circuit diagram of ic 7493

    Abstract: ic 7493 block diagram pin diagram of ic 7493 HY531000 HY531000S of IC 7493
    Text: HY531000 S e rie s »H YUND AI IM X 1-bit CMOS DRAM DESCRIPTION The HY531000 is the new generation and fast dynamic RAM organized 1,048,576 x 1-bit. The HY531000 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


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    PDF HY531000 300mil 300BSC 27JBSC 1AB04-30-MA HY531000S circuit diagram of ic 7493 ic 7493 block diagram pin diagram of ic 7493 of IC 7493

    PI-38

    Abstract: No abstract text available
    Text: •HYUNDAI HYM594000B Series SEMICONDUCTOR 4M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM594000B is a 4M x 9-bit Fast page mode CM O S DRAM module consisting of two HY5117400 in 24/28 pin SO J and one HY514100A in 20/26 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.22nF decoupling


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    PDF HYM594000B HY5117400 HY514100A HYM594000BM/BLM 1BC0e-00 MAY93 53-BEFORE-H 1BC06-00 PI-38

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    PDF

    KMM5321000CV-7

    Abstract: e5c5 KMM5321000
    Text: DRAM MODULE 4 Mega Byte KMM5321OOOCV/CVG Fast Page Mode 1Mx32 DRAM SIMM, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5321000CV is a 1M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5321000CV consists of eight CMOS 1Mx4bit DRAMs in 20-pin SOJ packages mounted on


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    PDF KMM5321OOOCV/CVG 1Mx32 KMM5321000CV 20-pin 72-pin KMM5321000CV-7 e5c5 KMM5321000