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    18160B Search Results

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    18160B Price and Stock

    ECS International Inc ECS-2018-160-BN

    XTAL OSC XO 16.0000MHZ HCMOS SMD
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    DigiKey ECS-2018-160-BN Cut Tape 394 1
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    Mouser Electronics ECS-2018-160-BN 257
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    Master Electronics ECS-2018-160-BN
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    New Advantage Corporation ECS-2018-160-BN 2,000 1
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    Amphenol Communications Solutions SIP050-1X18-160B

    1X18-160B-SIP SOCKET 18 CTS
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    Amphenol Communications Solutions SIP050-1X18-160BLF

    CONN SOCKET SIP 18POS GOLD
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    Hewlett Packard Co 718160-B21

    HP 1.2TB 6G SAS 10K RPM SFF (2.5-INCH) DUAL PORT ENTERPRISE 3YR WARRANTY HARD DRIVE - Bulk (Alt: 718160-B21)
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    ECS International Inc ECS-2018-160-BN-TR

    Clock Oscillator 16MHz 1.8V 15pF 4-Pin SMD T/R - Tape and Reel (Alt: ECS-2018-160-BN)
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    Avnet Americas ECS-2018-160-BN-TR Reel 12 Weeks 1,000
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    Find more 18160B price and stock on Findchips.com

    18160B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Barrier Block Accessories Fanning Strips Catalog Numbers and Dimensions for Fanning Strips for 140 Series Terminal Blocks Straight Type Dimensions Catalog No. 6-160B-R Catalog No. 6-160-R Ordering Information No. of Terminals 2 3 4 5 6 7 8 9 10 11 12 13 14


    Original     		PDF 6-160B-R 6-160-R 2-160-R 3-160-R 4-160-R 5-160-R 7-160-R 8-160-R 9-160-R

    DC-37PTI

    Abstract: ms24266r bacc63bn LGA 478 SOCKET PIN LAYOUT 94v-0 lcd display BACC45 BACC63CB bacc10gh BACC63BV MIL-C-27500
    Text: Catalog No. C-865 CIN:APSE High Speed Interconnect Technology CIN:APSE ® FEATURES High-Speed Interconnect Technology • High signal speed capability enabling frequencies greater than 20 GHz. ■ Z-Axis, solderless, compression mount interconnect system.


    Original     		PDF C-865 UT-304 FCT-551 FCT-552 DC-37PTI ms24266r bacc63bn LGA 478 SOCKET PIN LAYOUT 94v-0 lcd display BACC45 BACC63CB bacc10gh BACC63BV MIL-C-27500

    5-176-3 terminal block

    Abstract: mini circuits 15542 MS14141 DIN 18541 8-32X3 s31512 mini 15542 P-306-CCE 5-140-Y E61245
    Text: COMMERCIAL Barrier Blocks Circular Mini DIN BNC Jones Plugs Edge Connectors Commercial [.050” 1.27mm Density Solder Introduction Cup/Wire D-Microminiature] Cinch Commercial Products, consisting of Jones Plugs and Sockets, Barrier Blocks, Edge Cards, Two-Piece Commercial Dins,


    Original     		PDF

    DIN 41529

    Abstract: bacc10 MIL-C-83513 connector BACC45FT BACC10GH BACC45FN S2402D PTI 30 040 ga BACC45FM cd 1191 acb
    Text: Catalog No. C-865 CIN:APSE High Speed Interconnect Technology CIN:APSE ® FEATURES High-Speed Interconnect Technology • High signal speed capability enabling frequencies greater than 20 GHz. ■ Z-Axis, solderless, compression mount interconnect system.


    Original     		PDF C-865 UT-304 FCT-551 FCT-552 DIN 41529 bacc10 MIL-C-83513 connector BACC45FT BACC10GH BACC45FN S2402D PTI 30 040 ga BACC45FM cd 1191 acb

    BACC63CB

    Abstract: bacc63bv m32029 BACC45 BACC45FT M22759/33-26-9 BACC45FN BACC63BP MIL-C-39029/31 Cinch Connectors bacc45ft
    Text: Catalog No. C-865 CIN:APSE High Speed Interconnect Technology CIN:APSE ® FEATURES High-Speed Interconnect Technology • High signal speed capability enabling frequencies greater than 20 GHz. ■ Z-Axis, solderless, compression mount interconnect system.


    Original     		PDF C-865 UT-304 FCT-551 FCT-552 BACC63CB bacc63bv m32029 BACC45 BACC45FT M22759/33-26-9 BACC45FN BACC63BP MIL-C-39029/31 Cinch Connectors bacc45ft

    Untitled

    Abstract: No abstract text available
    Text: DURA-CON Barrier Blocks High Reliability Accessories All-Plastic Solder Terminals 3/4W, Y, and W Optional Terminals for use with Cinch terminal blocks. See chart for type and dimensions. Below 2 Ordering Information "3/4 W" Terminals - Dimensions Catalog


    Original     		PDF 3/4W-140 3/4W-141 3/4W-142

    Untitled

    Abstract: No abstract text available
    Text: VG 26 V (S)18160B 1,048,576 x 16-Bit CMOS Dynamic RAM VIS H Description The device is CMOS Dynamic RAM organized as 1,048,576 words x 16 bits. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only power supply. Low voltage operation is more suitable to be used


    OCR Scan     		PDF 18160B 16-Bit 42-pin 50/44-pin lG5-0037 18160BT-6 18160BT-7

    TC5118160B

    Abstract: No abstract text available
    Text: TOSHIBA clüi:î7E4fi 0 0 20 3 0 1 552 • 18160BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description Features 16M The TC 18160BJ/BFT is the fast page dynamic RAM organized as 1,048,576 w ords by 16 bits. The T C 51 18160BJ/BFT


    OCR Scan     		PDF TC5118160BJ/BFT-60/70 5118160BJ/BFT 18160BJ/BFT 0D2fi367 TC5118160B

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 51V 18160B S eries 1M x 16-bit CM OS DRAM with 2CAS DESCRIPTION The 18160B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The 18160B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques


    OCR Scan     		PDF 18160B 16-bit HY51V18160B 16-bit. 4b75Qfl8 1AD56-10-MAY9S HY51V18160BJC

    GM71C18160BJ6

    Abstract: GM71C18160B gm71c18160bj GM71C18160BJ7 GM71C18160BT6 GM71CS18160BL LG Semicon GM71C18160BJ-6
    Text: @ LG Semicon. Co. LTD. The G M 71C S 18160B/BL is the new generation dynamic RAM organized 1,048,576 words x 16 bits. GM71C(S)18160B/BL has realized higher density, higher performance and various functions by utilizing a d v a n c e d C M O S p r o c e s s te c h n o lo g y . T h e


    OCR Scan     		PDF 18160B/BL GM71C 4DE67S7 GM71C18160BJ6 GM71C18160B gm71c18160bj GM71C18160BJ7 GM71C18160BT6 GM71CS18160BL LG Semicon GM71C18160BJ-6

    s23a4

    Abstract: M5M4V18-60B8 M5M4V18
    Text: M 5 M 4 V 1 8 1 6 0 B J ,T P ,R T - 6 , - 7 ,- 8 , - 6 S v 7 S ,- 8 S FAST PAGE MODE 16777216-BIT 1048576-WQRD BY 16-BIT DYNAMiC RAM DESCRIPTION This is a family of 1048576-w ord by 16-bit dynamic RAMS, fabricated with the high performance CM OS process,and is ideal for


    OCR Scan     		PDF 16777216-BIT 1048576-WQRD 16-BIT 1048576-w 1048576-WORD 16-BIT M5M4V18160BJ s23a4 M5M4V18-60B8 M5M4V18

    Untitled

    Abstract: No abstract text available
    Text: DRAM 6 • DRAM - Low Voltage Versions (CMOS) Vcc= +3.3V±0.3V, T a=0°C Organization (Wxb) Access Time max. (ns) Part Number Power Consumption max. (mW) Cycle Time min. (ns) M B81V 16 160 A -60 60[15]*1 1 10[40]"3 324 M B81V 16 160 A -70 70(17]*1 130[45]*3


    OCR Scan     		PDF 0A-60L 8160A B81V16160B-50 B81V16160B-60 16160B-50L 16160B-60L 18160B-50 B81V1816CB-60 B-50L

    SIEMENS tle 420

    Abstract: ic 7014
    Text: SIEMENS 1M X 16-Bit Dynamic RAM 1 k & 4k-Refresh HYB 3116160BSJ-50/-60/-70 HYB 18160BSJ-50/-60/-70 Advanced Inform ation I 048 576 words by 16-bit organization 0 to 70 C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version)


    OCR Scan     		PDF 16-Bit 3116160BSJ-50/-60/-70 3118160BSJ-50/-60/-70 HYB3118160BSJ-50) HYB3118160BSJ-60) HYB3118160BSJ-70) HYB3116160BSJ-50) SIEMENS tle 420 ic 7014

    fopf

    Abstract: ob35l0s a 3116 HYB3116160BSJ-50 HYB3116160BSJ-60 HYB3116160BSJ-70 HYB3118160BSJ-50 HYB3118160BSJ-60 HYB3118160BSJ-70 71ST5
    Text: S IE M E N S 1M X 16-Bit Dynamic RAM 1 k & 4k-Refresh HYB 3116160BSJ-50/-60/-70 HYB 18160BSJ-50/-60/-70 Advanced Inform ation Output unlatched at cycle end allows tw o ­ dim ensional chip selection Read, write, read-m odify-write, CAS-before-RAS refresh, RAS-only refresh,


    OCR Scan     		PDF 16-Bit 3116160BSJ-50/-60/-70 3118160BSJ-50/-60/-70 HYB3118160BSJ-50) HYB3118160BSJ-60) HYB3118160BSJ-70) J-////////////S77X I/01-I/016 fl235b05 fopf ob35l0s a 3116 HYB3116160BSJ-50 HYB3116160BSJ-60 HYB3116160BSJ-70 HYB3118160BSJ-50 HYB3118160BSJ-60 HYB3118160BSJ-70 71ST5

    Untitled

    Abstract: No abstract text available
    Text: HM51W16160B Series 18160B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-538 Z Preliminary Rev. 0.0 Mar. 11, 1996 Description The Hitachi HM51W16160B Series, 18160B Series are CMOS dynamic RAMs organized as 1,048,576-word x 16-bit. They employ the most advanced CMOS technology


    OCR Scan     		PDF HM51W16160B HM51W18160B 1048576-word 16-bit ADE-203-538 576-word 16-bit.

    BEDO RAM

    Abstract: hy5118160b HY512264 HY5117404 HY5118164B
    Text: TABLE OF CONTENTS •H Y U N D A I 1. TABLE OF CONTENTS Index . 1 2. PRODUCT QUICK REFERENCE GUIDE


    OCR Scan     		PDF HY531000A. HY534256A. 16-bit. HY5216257. x16-bit. DB101-20-MAY95 BEDO RAM hy5118160b HY512264 HY5117404 HY5118164B

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 2M X 32-Bit Dynamic RAM Module Hyper Page Mode - EDO Version HYM 322005S/GS-50/-60 Advanced Inform ation • 2 097 152 w ords by 32-bit organization • Fast access and cycle tim e 50 ns access time 84 ns cycle tim e (-50 version) 60 ns access time


    OCR Scan     		PDF 32-Bit 322005S/GS-50/-60 322005S/GS-50/-60

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS Summary of Types Summary of Types Type Ordering Code Package Description DRAM Pa Memory Components HYB 5 1 1000BJ-50 Q67100-Q1056 P-SOJ-26/20-1 300 mil 1 M X 1, 50 ns 33 HYB 5 1 1000BJ-60 Q67100-Q518 P-SOJ-26/20-1 300 mil 1 M X 1, 60 ns 33 HYB 5 1 1000BJ-70


    OCR Scan     		PDF 1000BJ-50 1000BJ-60 1000BJ-70 1000BJL-50 1000BJL-60 1000BJL-70 514256B-50 514256B-60 514256B-70 514256BJ-50

    64mb edo dram simm

    Abstract: Dram 168 pin EDO 8Mx8 4Mx4 dram simm 17405CJ
    Text: Product Introduction VISWi 1.1.1 4Mb DRAM 1.1.2 16Mb DRAM i Product Introduction 1.1.2 16Mb DRAM continued 2 Product Introduction 1.1.3 64Mb PRAM 64M bit 3.3 -r 8Mx8 Volt L 4M x 16 3 Product Introduction 1.1.4 16Mb SDRAM 1.1.5 64Mb SDRAM 1.1.6 8Mb SGRAM 3.3 Volt


    OCR Scan     		PDF VQ264260BJ 4265BJ 264265BJ 17400CJ 17405CJ 174TGA 26418165BJGA 26418165BTGA VE46417805BJGA 64mb edo dram simm Dram 168 pin EDO 8Mx8 4Mx4 dram simm

    Untitled

    Abstract: No abstract text available
    Text: - H Y U N D A I * 18160B,HY51 V I6160B 1Mx16, Fast Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 1,048,576 x 16-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    OCR Scan     		PDF HY51V18160B I6160B 1Mx16, 16-bit DQO-OQ15)

    Untitled

    Abstract: No abstract text available
    Text: VG26 V (S)17800B 2,097,152 x 8-Bit CMOS Dynamic RAM Description The device is CMOS Dynamic RAM organized as 2,097,152 words x 8 bits. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only power supply. Low voltage operation is more suitable to be used


    OCR Scan     		PDF 17800B 28-pin

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 1M X 32-Bit Dynamic RAM Module 2M X 16-Bit Dynamic RAM Module HYM 321000S/GS-50/-60 Advanced Inform ation • 1 048 576 words by 32-bit organization (alternative 2 097 152 w ords by 16-bit) • Fast access and cycle tim e 50 ns access time 90 ns cycle tim e (-50 version)


    OCR Scan     		PDF 32-Bit 16-Bit 321000S/GS-50/-60 16-bit) A235b05 fl23SbOS

    VG2618160

    Abstract: HA2010
    Text: viswi V M 18160B ,V M 18160B 1M ,2M x 32-B it Dynamic RAM Module_ Description The V M 18160B and 18160B are 1M x 32-bit and 2M x 32-bit dynam ic RAM modules. It is m ounted by 2/4 pieces o f 1M x 16 DRAM 18160B ,and each in a standard


    OCR Scan     		PDF 13218160B 23218160B 13218160B VM23218160B 32-bit VG2618160B) VM13218160B VG2618160 HA2010

    TC5118160

    Abstract: TC5118160B
    Text: TOSHIBA 18160BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description The TC 18160BJ/BFT is the fast page dynamic RAM organized as 1,048,576 w ords by 16 bits. The TC 18160BJ/BFT utilizes Toshiba's CM OS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF TC5118160BJ/BFT-60/70 5118160BJ/BFT 18160BJ/BFT B-127 TC5118160 TC5118160B