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    KMM5321000 Search Results

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    Samsung Semiconductor KMM5321000BV-7

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    Samsung Semiconductor KMM5321000BV-6

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    KMM5321000 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KMM5321000BV-6 Sharp 1M x 32 DRAM SIMM Memory Module Scan PDF
    KMM5321000BV-7 Sharp 1M x 32 DRAM SIMM Memory Module Scan PDF
    KMM5321000BV-8 Sharp 1M x 32 DRAM SIMM Memory Module Scan PDF
    KMM5321000BVG-6 Sharp 1M x 32 DRAM SIMM Memory Module Scan PDF
    KMM5321000BVG-7 Sharp 1M x 32 DRAM SIMM Memory Module Scan PDF
    KMM5321000BVG-8 Sharp 1M x 32 DRAM SIMM Memory Module Scan PDF

    KMM5321000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M5M23160

    Abstract: TC5117400 oki cross kmm5322000a THM324080AS lh538000 424100 IBM025161 MC-421000A36 uPD482445
    Text: OKI Semiconductor Memory Cross Reference 16-Meg DRAMs OKI Part Number MSM5116160 MSM5116400 MSM5117100 MSM5117400 MSM5117800 MSM51V16100 MSM51V16160 MSM51V16400 MSM51V17100 MSM51V17400 MSM51V18160 Configuration Voltage Refresh 1 Meg x 16 4 Meg x 4 16 Meg x 1


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    PDF 16-Meg MSM5116160 MSM5116400 MSM5117100 MSM5117400 MSM5117800 MSM51V16100 MSM51V16160 MSM51V16400 MSM51V17100 M5M23160 TC5117400 oki cross kmm5322000a THM324080AS lh538000 424100 IBM025161 MC-421000A36 uPD482445

    KMM5321000BV-7

    Abstract: KMM5321000BV-6 1Mx4 dram simm caso Samsung Capacitor DO30 KMM5321000BV-8
    Text: SAMSUNG ELECTRONICS INC b?E D • O O lS llb KMM5321000BV/BVG fi^b DRAM MODULES 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tftAC • • • • • • • tcAc I rc KMM5321000BV-6 60ns 15ns 110ns KMM5321000BV-7 70ns


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    PDF KMM5321000BV/BVG 1Mx32 KMM5321000BV-6 KMM5321000BV-7 110ns 130ns 150ns KMM5321000BV-8 cycles/16ms KMM5321000BV 1Mx4 dram simm caso Samsung Capacitor DO30

    KMM5321000BV-6

    Abstract: No abstract text available
    Text: KM M5321000BV/BVG DRAM MODULES 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5321000BV is a 1M bits x 32 Dynam­ ic RAM high de nsity m em ory module. The Samsung KMM5321000BV co n s is t of eig h t CMOS 1 M x 4 bit


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    PDF M5321000BV/BVG 1Mx32 KMM5321000BV-6 KMM5321000BV-7 KMM5321000BV-8 110ns 130ns 150ns KMM5321000BV KMM5321000BV-6

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KMM5321OOOW/WG DRAM MODULES 1M x32 DRAM SIMM Memory Module GENERAL DESCRIPTION FEATURES • Performance range: tRAC KM M5321000W-7 KMM5321000W-8 KM M5321000W-10 70ns 20ns 130ns 80ns 20ns 150ns 100ns 25ns 180ns Fast Page Mode operation CAS-before-RAS refresh capability


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    PDF KMM5321OOOW/WG KMM5321000W 42-pin 72-pin 22/xF M5321000W-7 KMM5321000W-8 M5321000W-10

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    Abstract: No abstract text available
    Text: DRAM MODULES KMM5321000AV/AVG 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: KM M5321000AV- 7 • • • • • • • tRAC tcAC tRC 70ns 2 0 ns 130ns KMM5321000AV- 8 80ns 2 0 ns 150ns KM M5321000AV-10 1 0 0 ns 25ns 180ns


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    PDF KMM5321000AV/AVG 1Mx32 M5321000AV- KMM5321000AV- M5321000AV-10 130ns 150ns 180ns KMM5321000AV bitsx32

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 4 Mega Byte KMM5321000W/WG Fast Page Mode 1 M x32 DRAM S IM M , 4K Refresh , 5V Using 1M x16 Byte Word Wide DRAM G EN E R A L DES C R IPTIO N FEATURES • P e rfo rm an ce R ange: T h e S a m s u n g K M M 5 3 2 1 0 0 0 W is a 1M b il x 32 D y n a m ic R A M h ig h d e n s ity m e m o ry m o d u le . T h e


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    PDF KMM5321000W/WG 321000W 130ns 150ns 1Mx16 KM416C1000J

    KM416C1000AJ

    Abstract: No abstract text available
    Text: DRAM MODULE 4 Mega Byte KMM5321OOOAW/AWG Fast Page Mode 1Mx32 DRAM S IM M , 4K Refresh , 5V Using 1Mx16 Byte Word Wide DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321000AW is a 1M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5321000AW consists of two CMOS


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    PDF KMM5321OOOAW/AWG 1Mx32 1Mx16 KMM5321000AW 42-pin 72-pin KMM5321000AW-6 KM416C1000AJ

    KMM5321000CV-7

    Abstract: e5c5 KMM5321000
    Text: DRAM MODULE 4 Mega Byte KMM5321OOOCV/CVG Fast Page Mode 1Mx32 DRAM SIMM, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5321000CV is a 1M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5321000CV consists of eight CMOS 1Mx4bit DRAMs in 20-pin SOJ packages mounted on


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    PDF KMM5321OOOCV/CVG 1Mx32 KMM5321000CV 20-pin 72-pin KMM5321000CV-7 e5c5 KMM5321000

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULES KMM5321000AV/AVG 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM532100QAV is a 1M bitsx32 Dynamic RAM high density memory module. The Samsung KMM5321000AV consist of eight CMOS 1M x4 bit DRAMs in 20-pin SOJ package mounted on a 72-pin


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    PDF KMM5321000AV/AVG 1Mx32 KMM532100QAV bitsx32 KMM5321000AV 20-pin 72-pin 22/jF 130ns 180ns

    Untitled

    Abstract: No abstract text available
    Text: KMM5321000BV/BVG DRAM MODULES 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5321000BV is a 1M bits x 32 Dynam­ ic RAM high density memory module. The Samsung KMM5321000BV consist of eight CMOS 1 Mx 4 bit


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    PDF KMM5321000BV/BVG 1Mx32 KMM5321000BV 20-pin 72-pin 110ns KMM5321000BV-7 130ns KMM5321000BV-8

    Untitled

    Abstract: No abstract text available
    Text: KMM5321000AV/AVG DRAM MODULES 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5321000AV is a 1M bitsx32 Dynamic RAM high density memory module. The Samsung KMM5321000AV consist of eight CMOS 1Mx4 bit DRAMs in 20-pin SOJ package mounted on a 72-pin


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    PDF KMM5321000AV/AVG 1Mx32 KMM5321000AV- KMM5321000AV-10 100ns 130ns 150ns 180ns KMM5321000AV

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTR ONI CS INC b?E D • 7^4142 KMM5321000BV/BVG SHGK DDlSllb DRAM MODULES 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • P erform ance range: The Samsung KMM5321000BV is a 1M b its x 32 Dynam­ ic RAM high d e n sity m em ory m odule. The S am sung


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    PDF KMM5321000BV/BVG 1Mx32 KMM5321000BV 20-pin 72-pin 22/iF 110ns KMM5321000BV-7 130ns

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC T' ìbm M S DDIMSMM 4T7 •■ SMßK b4E D KMM5321000AV/AVG DRAM MODULES 1Mx32 DRAM SIMM Memory Module GENERAL DESCRIPTION FEATURES • Performance range: • • • • • • • tRAC tCAC KMM5321000AV- 7 70ns 20 ns 130ns KMM5321000AV- 8


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    PDF KMM5321000AV/AVG 1Mx32 KMM5321000AV- 130ns 150ns KMM5321000AV-10 100ns 180ns KMM532100QAV

    KM44C1000

    Abstract: No abstract text available
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3. 4. II. Introduction . 11 Product G uide. 14


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    PDF KM41C4000 KM41C1000L KM41C4001 M5361000A/AG/A1/A1G KMM5322000AV/AVG KMM5362000A/AG/A1/A1G KMM5401000A/AG KMM5402000A/AG KM44C1000

    M5916

    Abstract: 533410 M5402 KMM591000CN-7 KMM5334100
    Text: 1. INTRODUCTION Dynamic RAM Module 14M Based } ; - ilM x 8 "11Mx9 1KMM581000CÑ-6 HKMM58100ÒCN-7 IKMM581000CN-8 j • KMM591000CN-6 : ¡]KMM591000CN-7~ ~~~ffKMM591000CN-8 [4Mx8 J - ]4Mx9 .KMM584Q0ÒC-5 jjKM M584Q00C-6 ] KMM584000C-7 _ |K M M 584000C-8 - 1KMM594000C-5


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    PDF 11Mx9 KMM581000C KMM584Q0 KMM594000C-5 HKMM58100 KMM591000CN-7 M584Q00C-6 jKMM59400QC-6 KMM533100 KMM5361000C2/C2G M5916 533410 M5402 KMM591000CN-7 KMM5334100

    DYNAMIC RAM CROSS REFERENCE

    Abstract: TC514400 KMM5362000 KMM53220 KMM581000 KMM532200 THMS361020 TC514100 KMM591000 MC-422000A36
    Text: FUNCTION GUIDE 3. Cross Reference 3.1 Dynamic RAM Oig. X1 X4 3.2 Samsung Toshiba Hitachi Fu|ttsu NEC F. Page KM41C4000 TC514100 HM514100 MB814100 MPD424100 MSM514100 Nibble KM41C4001 TC514101 HM514101 MB814101 MPD424101 MSM514101 S. Column KM41C4002 TC514102


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    PDF KM41C4000 KM41C4001 KM41C4002 KM44C1000 KM44C1002 TC514100 TC514101 TC514102 TC514400 TC514402 DYNAMIC RAM CROSS REFERENCE KMM5362000 KMM53220 KMM581000 KMM532200 THMS361020 KMM591000 MC-422000A36

    KMCJ532512

    Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
    Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7


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    PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL

    SIMM 1Mx9 30pin

    Abstract: simm EDO 72pin KMM51442100ATG KMM532
    Text: I. DRAM MODULE Product Guide Org. Part No. Feature Access Time ns Package Height s.single/didouble (mil) Refresh (cycle/ms) CIS 1024/16 1024/120 1024/16 1024/120 1024/16 1024/16 1024/16 1024/16 now now now now now now now now 1024/16 1024/16 1024/16 1024/16


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    PDF 1Mx32 1Mx33 1Mx36 KMM581000CN KMM5B1020CN KMM591000CN KMM591020CN KMM5321000CV/CVG KMM5331000C/CG KMM5361000C2/C2G SIMM 1Mx9 30pin simm EDO 72pin KMM51442100ATG KMM532

    KM424C256Z

    Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
    Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100


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    PDF KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C464P KM424C256Z KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ

    KMM591000AN

    Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
    Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC


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    PDF KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C464P KMM591000AN KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble

    KMM591000AN8

    Abstract: KMM591000AN KMM591000AN-7 AG10 KMM591000AN10 kmm5322000av KMM591000 A1G10 KMM5362000A KMM584000A
    Text: FUNCTION GUIDE 1. Introduction 1.1 Dynamic RAM di SAMSUNG Electronics 11 FUNCTION GUIDE ’ New Product eg SAMSUNG Electronics 12 FUNCTION GUIDE 1.2 Dynamic RAM Module CMOS T- 1M x8 - KMM58100QAN-7 KMM58100QAN-8 KMM581000AN-10 KMM591000AN-7 KMM591000AN-8 KMM591000AN-10


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    PDF KMM58100QAN-7 KMM58100QAN-8 KMM581000AN-10 KMM591000AN-7 KMM591000AN-8 KMM591000AN-10 KMM584000A-7 KMM584000A-8 KMM584000A-10 KMM594000A-7 KMM591000AN8 KMM591000AN KMM591000AN-7 AG10 KMM591000AN10 kmm5322000av KMM591000 A1G10 KMM5362000A KMM584000A

    KMM5324100AV

    Abstract: No abstract text available
    Text: TABLE OF CONTENTS DRAM Module Product Guide DRAM SIMM Based on 16M DRAM 5V 4 M x 8 . KMM584100AN-5/6/7/8. 4 M x 8 . KM M584100AKN-5/6/7/8. 4 M x 9 . KMM5941OOAN-5/6/7/8.


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    PDF KMM584100AN-5/6/7/8. M584100AKN-5/6/7/8. KMM5941OOAN-5/6/7/8. KMM594100AKN-5/6/7/8. M5816000A/AT-5/6/7/8 KMM5816000AK-5/6W KMM5916000A/AT-5/6/7/8. KMM5916000AK-5/6/7/8. KMM5324100AV/AVG-5/6/7/8 KMM5322000W/WG-7/8. KMM5324100AV

    AG10

    Abstract: km416c256 1m maskrom KM68B1002-10
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM sg SA M SU N G Electronics 11 MEMORY ICs — 4M bit FUNCTION GUIDE 4M X 1 KM41C4000A-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-7 KM41C4000AL-8 KM41C4000AL-10 KM41C4000ASL-7 KM41C4000ASL-8 - KM41C4000ASL-10


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    PDF KM41C4000A-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-7 KM41C4000AL-8 KM41C4000AL-10 KM41C4000ASL-7 KM41C4000ASL-8 KM41C4000ASL-10 KM41C4001A-7 AG10 km416c256 1m maskrom KM68B1002-10