SO8FL
Abstract: FOOTPRINT PCB nsmd smd stencil tension WS3060 so8 pcb pattern 1505C 020C
Text: AND8195/D Board Mounting Notes for SO8−Flat Lead Prepared by: Steve St. Germain, Phil Celaya, and Isauro Amaro ON Semiconductor http://onsemi.com APPLICATION NOTE INTRODUCTION Wire Bond Various ON Semiconductor devices are packaged in an advanced power leadless package named Quad Flat
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AND8195/D
SO8FL
FOOTPRINT PCB
nsmd smd
stencil tension
WS3060
so8 pcb pattern
1505C
020C
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PDF
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nsmd smd
Abstract: AND8195 SO8FL Solder paste stencil life AND8195/D 020C 1505C
Text: AND8195/D Board Mounting Notes for SO8−Flat Lead Prepared by: Steve St. Germain, Phil Celaya, and Isauro Amaro ON Semiconductor http://onsemi.com APPLICATION NOTE INTRODUCTION Wire Bond Various ON Semiconductor devices are packaged in an advanced power leadless package named Quad Flat
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AND8195/D
nsmd smd
AND8195
SO8FL
Solder paste stencil life
AND8195/D
020C
1505C
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PDF
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4841NH
Abstract: mosfet 4841NH 4841N 090nh NTMFS4841NHT1G
Text: NTMFS4841NH Power MOSFET 30 V, 59 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices
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NTMFS4841NH
AND8195/D
NTMFS4841NH/D
4841NH
mosfet 4841NH
4841N
090nh
NTMFS4841NHT1G
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Untitled
Abstract: No abstract text available
Text: NTMFS4839N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL Features • • • • Low RDS ON to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com
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NTMFS4839N
AND8195/D
NTMFS4839N/D
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PDF
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Untitled
Abstract: No abstract text available
Text: NTMFS4847N Power MOSFET 30 V, 85 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO−8 Package
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NTMFS4847N
AND8195/D
NTMFS4847N/D
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PDF
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Untitled
Abstract: No abstract text available
Text: NTMFS4849N Power MOSFET 30 V, 71 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package
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NTMFS4849N
AND8195/D
NTMFS4849N/D
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PDF
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Untitled
Abstract: No abstract text available
Text: NTMFS4841N Power MOSFET 30 V, 57 A, Single N−Channel, SO−8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com
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NTMFS4841N
AND8195/D
NTMFS4841N/D
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PDF
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Untitled
Abstract: No abstract text available
Text: NTMFS4933N Power MOSFET 30 V, 210 A, Single N−Channel, SO−8 FL Features • Low RDS on to Improve Conduction and Overall Efficiency • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant Applications • OR−ing FET, Power Load Switch, Motor Control
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NTMFS4933N
AND8195/D
NTMFS4933N/D
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4839N
Abstract: on semiconductor NTMFS4839N datasheet NTMFS4839N NTMFS4839NT1G NTMFS4839NT3G
Text: NTMFS4839N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL Features • • • • Low RDS ON to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com
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NTMFS4839N
AND8195/D
NTMFS4839N/D
4839N
on semiconductor NTMFS4839N datasheet
NTMFS4839N
NTMFS4839NT1G
NTMFS4839NT3G
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PDF
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NTMFS4833NT1G
Abstract: No abstract text available
Text: NTMFS4833N Power MOSFET 30 V, 191 A, Single N−Channel, DFN5 SO−8FL Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices
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NTMFS4833N
AND8195/D
NTMFS4833N/D
NTMFS4833NT1G
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PDF
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4933N
Abstract: No abstract text available
Text: NTMFS4933N Power MOSFET 30 V, 210 A, Single N−Channel, SO−8 FL Features • Low RDS on to Improve Conduction and Overall Efficiency • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant Applications • OR−ing FET, Power Load Switch, Motor Control
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NTMFS4933N
AND8195/D
NTMFS4933N/D
4933N
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PDF
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Untitled
Abstract: No abstract text available
Text: NTMFS4849N Power MOSFET 30 V, 71 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package
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NTMFS4849N
AND8195/D
NTMFS4849N/D
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PDF
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NTMFS4833NT1G
Abstract: No abstract text available
Text: NTMFS4833N Power MOSFET 30 V, 191 A, Single N−Channel, SO−8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com
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NTMFS4833N
AND8195/D
NTMFS4833N/D
NTMFS4833NT1G
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PDF
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Untitled
Abstract: No abstract text available
Text: NTMFS4821N Power MOSFET 30 V, 58.5 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO−8 Package
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NTMFS4821N
AND8195/D
NTMFS4821N/D
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Untitled
Abstract: No abstract text available
Text: NTMFS4933N Power MOSFET 30 V, 210 A, Single N−Channel, SO−8 FL Features • Low RDS on to Improve Conduction and Overall Efficiency • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant Applications • OR−ing FET, Power Load Switch, Motor Control
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NTMFS4933N
AND8195/D
NTMFS4933N/D
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PDF
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Untitled
Abstract: No abstract text available
Text: NTMFS4835N Power MOSFET 30 V, 104 A, Single N−Channel, SO−8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com
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NTMFS4835N
AND8195/D
NTMFS4835N/D
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PDF
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Untitled
Abstract: No abstract text available
Text: NTMFS4847N Power MOSFET 30 V, 85 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO−8 Package
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NTMFS4847N
AND8195/D
NTMFS4847N/D
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PDF
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Untitled
Abstract: No abstract text available
Text: NTMFS4845N Power MOSFET 30 V, 115 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO−8 Package
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NTMFS4845N
AND8195/D
NTMFS4845N/D
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4837NH
Abstract: NTMFS4837NHT1G NTMFS4837NHT3G
Text: NTMFS4837NH Power MOSFET 30 V, 75 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices*
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NTMFS4837NH
AND8195/D
NTMFS4837NH/D
4837NH
NTMFS4837NHT1G
NTMFS4837NHT3G
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4851N
Abstract: NTMFS4851NT1G NTMFS4851NT3G
Text: NTMFS4851N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package
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NTMFS4851N
AND8195/D
NTMFS4851N/D
4851N
NTMFS4851NT1G
NTMFS4851NT3G
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4846N
Abstract: NTMFS4846N NTMFS4846NT1G NTMFS4846NT3G mosfet 4846n
Text: NTMFS4846N Power MOSFET 30 V, 100 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package
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NTMFS4846N
AND8195/D
NTMFS4846N/D
4846N
NTMFS4846N
NTMFS4846NT1G
NTMFS4846NT3G
mosfet 4846n
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4839Nh
Abstract: NTMFS4839NHT1G NTMFS4839NHT3G
Text: NTMFS4839NH Power MOSFET 30 V, 64 A, Single N−Channel, SO−8FL Features • • • • • Low RDS ON to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices*
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NTMFS4839NH
AND8195/D
NTMFS4839NH/D
4839Nh
NTMFS4839NHT1G
NTMFS4839NHT3G
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NTMFS4821NT3G
Abstract: NTMFS4821N 4821n NTMFS4821NT1G
Text: NTMFS4821N Power MOSFET 30 V, 58.5 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO−8 Package
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NTMFS4821N
AND8195/D
NTMFS4821N/D
NTMFS4821NT3G
NTMFS4821N
4821n
NTMFS4821NT1G
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PDF
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4841N
Abstract: NTMFS4841N NTMFS4841NT1G NTMFS4841NT3G
Text: NTMFS4841N Power MOSFET 30 V, 57 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Device http://onsemi.com
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NTMFS4841N
AND8195/D
NTMFS4841N/D
4841N
NTMFS4841N
NTMFS4841NT1G
NTMFS4841NT3G
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