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    AND8195 Search Results

    AND8195 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AND8195 On Semiconductor Application Note: Board Mounting Notes for SO8-Flat Lead Original PDF

    AND8195 Datasheets Context Search

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    SO8FL

    Abstract: FOOTPRINT PCB nsmd smd stencil tension WS3060 so8 pcb pattern 1505C 020C
    Text: AND8195/D Board Mounting Notes for SO8−Flat Lead Prepared by: Steve St. Germain, Phil Celaya, and Isauro Amaro ON Semiconductor http://onsemi.com APPLICATION NOTE INTRODUCTION Wire Bond Various ON Semiconductor devices are packaged in an advanced power leadless package named Quad Flat


    Original     		PDF AND8195/D SO8FL FOOTPRINT PCB nsmd smd stencil tension WS3060 so8 pcb pattern 1505C 020C

    nsmd smd

    Abstract: AND8195 SO8FL Solder paste stencil life AND8195/D 020C 1505C
    Text: AND8195/D Board Mounting Notes for SO8−Flat Lead Prepared by: Steve St. Germain, Phil Celaya, and Isauro Amaro ON Semiconductor http://onsemi.com APPLICATION NOTE INTRODUCTION Wire Bond Various ON Semiconductor devices are packaged in an advanced power leadless package named Quad Flat


    Original     		PDF AND8195/D nsmd smd AND8195 SO8FL Solder paste stencil life AND8195/D 020C 1505C

    4841NH

    Abstract: mosfet 4841NH 4841N 090nh NTMFS4841NHT1G
    Text: NTMFS4841NH Power MOSFET 30 V, 59 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices


    Original     		PDF NTMFS4841NH AND8195/D NTMFS4841NH/D 4841NH mosfet 4841NH 4841N 090nh NTMFS4841NHT1G

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4839N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL Features • • • • Low RDS ON to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTMFS4839N AND8195/D NTMFS4839N/D

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4847N Power MOSFET 30 V, 85 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO−8 Package


    Original     		PDF NTMFS4847N AND8195/D NTMFS4847N/D

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4849N Power MOSFET 30 V, 71 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package


    Original     		PDF NTMFS4849N AND8195/D NTMFS4849N/D

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4841N Power MOSFET 30 V, 57 A, Single N−Channel, SO−8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTMFS4841N AND8195/D NTMFS4841N/D

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4933N Power MOSFET 30 V, 210 A, Single N−Channel, SO−8 FL Features • Low RDS on to Improve Conduction and Overall Efficiency • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant Applications • OR−ing FET, Power Load Switch, Motor Control


    Original     		PDF NTMFS4933N AND8195/D NTMFS4933N/D

    4839N

    Abstract: on semiconductor NTMFS4839N datasheet NTMFS4839N NTMFS4839NT1G NTMFS4839NT3G
    Text: NTMFS4839N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL Features • • • • Low RDS ON to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTMFS4839N AND8195/D NTMFS4839N/D 4839N on semiconductor NTMFS4839N datasheet NTMFS4839N NTMFS4839NT1G NTMFS4839NT3G

    NTMFS4833NT1G

    Abstract: No abstract text available
    Text: NTMFS4833N Power MOSFET 30 V, 191 A, Single N−Channel, DFN5 SO−8FL Features • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices


    Original     		PDF NTMFS4833N AND8195/D NTMFS4833N/D NTMFS4833NT1G

    4933N

    Abstract: No abstract text available
    Text: NTMFS4933N Power MOSFET 30 V, 210 A, Single N−Channel, SO−8 FL Features • Low RDS on to Improve Conduction and Overall Efficiency • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant Applications • OR−ing FET, Power Load Switch, Motor Control


    Original     		PDF NTMFS4933N AND8195/D NTMFS4933N/D 4933N

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4849N Power MOSFET 30 V, 71 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package


    Original     		PDF NTMFS4849N AND8195/D NTMFS4849N/D

    NTMFS4833NT1G

    Abstract: No abstract text available
    Text: NTMFS4833N Power MOSFET 30 V, 191 A, Single N−Channel, SO−8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTMFS4833N AND8195/D NTMFS4833N/D NTMFS4833NT1G

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4821N Power MOSFET 30 V, 58.5 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO−8 Package


    Original     		PDF NTMFS4821N AND8195/D NTMFS4821N/D

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4933N Power MOSFET 30 V, 210 A, Single N−Channel, SO−8 FL Features • Low RDS on to Improve Conduction and Overall Efficiency • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant Applications • OR−ing FET, Power Load Switch, Motor Control


    Original     		PDF NTMFS4933N AND8195/D NTMFS4933N/D

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4835N Power MOSFET 30 V, 104 A, Single N−Channel, SO−8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTMFS4835N AND8195/D NTMFS4835N/D

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4847N Power MOSFET 30 V, 85 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO−8 Package


    Original     		PDF NTMFS4847N AND8195/D NTMFS4847N/D

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4845N Power MOSFET 30 V, 115 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO−8 Package


    Original     		PDF NTMFS4845N AND8195/D NTMFS4845N/D

    4837NH

    Abstract: NTMFS4837NHT1G NTMFS4837NHT3G
    Text: NTMFS4837NH Power MOSFET 30 V, 75 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices*


    Original     		PDF NTMFS4837NH AND8195/D NTMFS4837NH/D 4837NH NTMFS4837NHT1G NTMFS4837NHT3G

    4851N

    Abstract: NTMFS4851NT1G NTMFS4851NT3G
    Text: NTMFS4851N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package


    Original     		PDF NTMFS4851N AND8195/D NTMFS4851N/D 4851N NTMFS4851NT1G NTMFS4851NT3G

    4846N

    Abstract: NTMFS4846N NTMFS4846NT1G NTMFS4846NT3G mosfet 4846n
    Text: NTMFS4846N Power MOSFET 30 V, 100 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package


    Original     		PDF NTMFS4846N AND8195/D NTMFS4846N/D 4846N NTMFS4846N NTMFS4846NT1G NTMFS4846NT3G mosfet 4846n

    4839Nh

    Abstract: NTMFS4839NHT1G NTMFS4839NHT3G
    Text: NTMFS4839NH Power MOSFET 30 V, 64 A, Single N−Channel, SO−8FL Features • • • • • Low RDS ON to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices*


    Original     		PDF NTMFS4839NH AND8195/D NTMFS4839NH/D 4839Nh NTMFS4839NHT1G NTMFS4839NHT3G

    NTMFS4821NT3G

    Abstract: NTMFS4821N 4821n NTMFS4821NT1G
    Text: NTMFS4821N Power MOSFET 30 V, 58.5 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO−8 Package


    Original     		PDF NTMFS4821N AND8195/D NTMFS4821N/D NTMFS4821NT3G NTMFS4821N 4821n NTMFS4821NT1G

    4841N

    Abstract: NTMFS4841N NTMFS4841NT1G NTMFS4841NT3G
    Text: NTMFS4841N Power MOSFET 30 V, 57 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Device http://onsemi.com


    Original     		PDF NTMFS4841N AND8195/D NTMFS4841N/D 4841N NTMFS4841N NTMFS4841NT1G NTMFS4841NT3G