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    4841N Search Results

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    4841N Price and Stock

    Rochester Electronics LLC EPF10K50SFC484-1N

    IC FPGA 220 I/O 484FBGA
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    DigiKey EPF10K50SFC484-1N Bulk 437 2
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    Rochester Electronics LLC EP20K200FC484-1N

    IC FPGA 382 I/O 484FBGA
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    DigiKey EP20K200FC484-1N Bulk 107 1
    • 1 $490.36
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    onsemi NTMFS4841NT1G

    MOSFET N-CH 30V 8.3A/57A 5DFN
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    DigiKey NTMFS4841NT1G Cut Tape 1 1
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    NTMFS4841NT1G Reel
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    Avnet Americas NTMFS4841NT1G Reel 4 Weeks 844
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    NTMFS4841NT1G Reel 0 Weeks, 2 Days 1,725
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    Bristol Electronics NTMFS4841NT1G 892
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    NTMFS4841NT1G 830
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    Rochester Electronics NTMFS4841NT1G 1,593 1
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    onsemi NTMFS4841NT3G

    MOSFET N-CH 30V 8.3A/57A 5DFN
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    onsemi NVMFS4841NT1G

    MOSFET N-CH 30V 16A 5DFN
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    Find more 4841N price and stock on Findchips.com

    4841N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4841NH

    Abstract: mosfet 4841NH 4841N 090nh NTMFS4841NHT1G
    Text: 4841NH Power MOSFET 30 V, 59 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices


    Original     		PDF NTMFS4841NH AND8195/D NTMFS4841NH/D 4841NH mosfet 4841NH 4841N 090nh NTMFS4841NHT1G

    Untitled

    Abstract: No abstract text available
    Text: 4841N Power MOSFET 30 V, 57 A, Single N−Channel, SO−8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTMFS4841N AND8195/D NTMFS4841N/D

    4841NH

    Abstract: 4841N SO8FL mosfet 4841NH NTMFS4841NH NTMFS4841NHT1G NTMFS4841NHT3G
    Text: 4841NH Power MOSFET 30 V, 59 A, Single N-Channel, SO-8 FL Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăLow RG •ăThese are Pb-Free Device*


    Original     		PDF NTMFS4841NH NTMFS4841NH/D 4841NH 4841N SO8FL mosfet 4841NH NTMFS4841NH NTMFS4841NHT1G NTMFS4841NHT3G

    4841N

    Abstract: NTMFS4841N NTMFS4841NT1G NTMFS4841NT3G mosfet 4841N
    Text: 4841N Power MOSFET 30 V, 57 A, Single N-Channel, SO-8 FL Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Device http://onsemi.com


    Original     		PDF NTMFS4841N NTMFS4841N/D 4841N NTMFS4841N NTMFS4841NT1G NTMFS4841NT3G mosfet 4841N

    4841N

    Abstract: NTMFS4841N NTMFS4841NT1G NTMFS4841NT3G
    Text: 4841N Power MOSFET 30 V, 57 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Device http://onsemi.com


    Original     		PDF NTMFS4841N AND8195/D NTMFS4841N/D 4841N NTMFS4841N NTMFS4841NT1G NTMFS4841NT3G

    4841N

    Abstract: NTMFS4841N NTMFS4841NT1G NTMFS4841NT3G
    Text: 4841N Power MOSFET 30 V, 57 A, Single N−Channel, SO−8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices* http://onsemi.com


    Original     		PDF NTMFS4841N AND8195/D NTMFS4841N/D 4841N NTMFS4841N NTMFS4841NT1G NTMFS4841NT3G

    4841NH

    Abstract: 4841N NTMFS4841NH NTMFS4841NHT1G NTMFS4841NHT3G mosfet 4841NH
    Text: 4841NH Power MOSFET 30 V, 59 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices*


    Original     		PDF NTMFS4841NH AND8195/D NTMFS4841NH/D 4841NH 4841N NTMFS4841NH NTMFS4841NHT1G NTMFS4841NHT3G mosfet 4841NH

    4841N

    Abstract: mosfet 4841N
    Text: 4841N Power MOSFET 30 V, 57 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Device http://onsemi.com


    Original     		PDF NTMFS4841N NTMFS4841N/D 4841N mosfet 4841N

    Untitled

    Abstract: No abstract text available
    Text: 4841N Power MOSFET 30 V, 57 A, Single N−Channel, SO−8FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTMFS4841N AND8195/D NTMFS4841N/D

    4841nh

    Abstract: NTMFS4841NH NTMFS4841NHT1G NTMFS4841NHT3G mosfet 4841NH
    Text: 4841NH Power MOSFET 30 V, 59 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Device*


    Original     		PDF NTMFS4841NH AND8195/D NTMFS4841NH/D 4841nh NTMFS4841NH NTMFS4841NHT1G NTMFS4841NHT3G mosfet 4841NH

    4841n

    Abstract: mosfet 4841N NTMFS4841N NTMFS4841NT1G NTMFS4841NT3G
    Text: 4841N Power MOSFET 30 V, 57 A, Single N−Channel, SO−8 FL Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Device http://onsemi.com


    Original     		PDF NTMFS4841N NTMFS4841N/D 4841n mosfet 4841N NTMFS4841N NTMFS4841NT1G NTMFS4841NT3G

    mosfet 4841NH

    Abstract: No abstract text available
    Text: 4841NH Power MOSFET 30 V, 59 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices


    Original     		PDF NTMFS4841NH AND8195/D NTMFS4841NH/D mosfet 4841NH

    4841Nh

    Abstract: No abstract text available
    Text: 4841NH Power MOSFET 30 V, 59 A, Single N-Channel, SO-8 FL Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăLow RG •ăThese are Pb-Free Device*


    Original     		PDF NTMFS4841NH NTMFS4841NH/D 4841Nh

    Untitled

    Abstract: No abstract text available
    Text: 4841NH Power MOSFET 30 V, 59 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices


    Original     		PDF NTMFS4841NH AND8195/D NTMFS4841NH/D