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    onsemi NTMFS4837NHT3G

    MOSFET N-CH 30V 10.2A/75A 5DFN
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    NTMFS4837NHT3G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NTMFS4837NHT3G On Semiconductor Power MOSFET 30 V, 75 A, Single N-Channel Original PDF

    NTMFS4837NHT3G Datasheets Context Search

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    4837NH

    Abstract: No abstract text available
    Text: NTMFS4837NH Power MOSFET 30 V, 75 A, Single N-Channel, SO-8 FL Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăLow RG •ăThese are Pb-Free Devices*


    Original     		PDF NTMFS4837NH NTMFS4837NH/D 4837NH

    4837NH

    Abstract: NTMFS4837NHT1G NTMFS4837NHT3G
    Text: NTMFS4837NH Power MOSFET 30 V, 75 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices*


    Original     		PDF NTMFS4837NH AND8195/D NTMFS4837NH/D 4837NH NTMFS4837NHT1G NTMFS4837NHT3G

    4837NH

    Abstract: NTMFS4837NHT1G NTMFS4837NHT3G 4837n
    Text: NTMFS4837NH Power MOSFET 30 V, 75 A, Single N-Channel, SO-8 FL Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăLow RG •ăThese are Pb-Free Devices*


    Original     		PDF NTMFS4837NH NTMFS4837NH/D 4837NH NTMFS4837NHT1G NTMFS4837NHT3G 4837n

    4837NH

    Abstract: NTMFS4837NHT1G NTMFS4837NHT3G
    Text: NTMFS4837NH Power MOSFET 30 V, 75 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices*


    Original     		PDF NTMFS4837NH AND8195/D NTMFS4837NH/D 4837NH NTMFS4837NHT1G NTMFS4837NHT3G

    4837NH

    Abstract: No abstract text available
    Text: NTMFS4837NH Power MOSFET 30 V, 75 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices


    Original     		PDF NTMFS4837NH AND8195/D NTMFS4837NH/D 4837NH