4851N
Abstract: NTMFS4851NT1G NTMFS4851NT3G
Text: NTMFS4851N Power MOSFET 30 V, 66 A, Single N-Channel, SO-8 FL Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThermally Enhanced SO8 Package
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Original
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NTMFS4851N
NTMFS4851N/D
4851N
NTMFS4851NT1G
NTMFS4851NT3G
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PDF
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4851N
Abstract: NTMFS4851NT1G NTMFS4851NT3G
Text: NTMFS4851N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8 FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package
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Original
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NTMFS4851N
AND8195/D
NTMFS4851N/D
4851N
NTMFS4851NT1G
NTMFS4851NT3G
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PDF
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4851N
Abstract: NTMFS4851NT1G NTMFS4851NT3G
Text: NTMFS4851N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package
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Original
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NTMFS4851N
AND8195/D
NTMFS4851N/D
4851N
NTMFS4851NT1G
NTMFS4851NT3G
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PDF
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Untitled
Abstract: No abstract text available
Text: NTMFS4851N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package
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Original
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NTMFS4851N
AND8195/D
NTMFS4851N/D
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PDF
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4851N
Abstract: 488AA
Text: NTMFS4851N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Thermally Enhanced SO8 Package
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Original
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NTMFS4851N
AND8195/D
NTMFS4851N/D
4851N
488AA
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PDF
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