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onsemi NTMFS4839NT1G MOSFET N-CH 30V 9.5A/64A 5DFN
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DigiKey	NTMFS4839NT1G	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	NTMFS4839NT1G		268,110		1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics LLC NTMFS4839NT1G MOSFET N-CH 30V 9.5A/64A 5DFN
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DigiKey	NTMFS4839NT1G	Bulk			1,110	1 - 10 - 100 - 1000 - 10000 $0.27	Buy Now

NTMFS4839NT1G Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NTMFS4839NT1G		On Semiconductor	Power MOSFET 30 V, 66 A, Single N-Channel, SO-8 FL		Original	PDF

NTMFS4839NT1G Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: NTMFS4839N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL Features • • • • Low RDS ON to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	PDF	NTMFS4839N AND8195/D NTMFS4839N/D
4839N Abstract: on semiconductor NTMFS4839N datasheet NTMFS4839N NTMFS4839NT1G NTMFS4839NT3G Text: NTMFS4839N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL Features • • • • Low RDS ON to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	PDF	NTMFS4839N AND8195/D NTMFS4839N/D 4839N on semiconductor NTMFS4839N datasheet NTMFS4839N NTMFS4839NT1G NTMFS4839NT3G
on semiconductor NTMFS4839N datasheet Abstract: NTMFS4839N NTMFS4839NT1G NTMFS4839NT3G Text: NTMFS4839N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL Features • • • • Low RDS ON to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	PDF	NTMFS4839N NTMFS4839N/D on semiconductor NTMFS4839N datasheet NTMFS4839N NTMFS4839NT1G NTMFS4839NT3G
4839N Abstract: NTMFS4839N NTMFS4839NT1G NTMFS4839NT3G Text: NTMFS4839N Power MOSFET 30 V, 66 A, Single N-Channel, SO-8FL Features •ăLow RDS ON to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com	Original	PDF	NTMFS4839N NTMFS4839N/D 4839N NTMFS4839N NTMFS4839NT1G NTMFS4839NT3G
NTMFS4839N Abstract: NTMFS4839NT1G NTMFS4839NT3G Text: NTMFS4839N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL Features • • • • Low RDS ON to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	PDF	NTMFS4839N NTMFS4839N/D NTMFS4839N NTMFS4839NT1G NTMFS4839NT3G
NTMFS4839N Abstract: NTMFS4839NT1G NTMFS4839NT3G 4839N Text: NTMFS4839N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL Features • • • • Low RDS ON to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices* http://onsemi.com	Original	PDF	NTMFS4839N AND8195/D NTMFS4839N/D NTMFS4839N NTMFS4839NT1G NTMFS4839NT3G 4839N
Untitled Abstract: No abstract text available Text: NTMFS4839N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL Features • • • • Low RDS ON to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com	Original	PDF	NTMFS4839N AND8195/D NTMFS4839N/D