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    NTMFS4839NHT3G Price and Stock

    Rochester Electronics LLC NTMFS4839NHT3G

    MOSFET N-CH 30V 9.5A/64A 5DFN
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    DigiKey NTMFS4839NHT3G Bulk 888
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    onsemi NTMFS4839NHT3G

    MOSFET N-CH 30V 9.5A/64A 5DFN
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    Verical NTMFS4839NHT3G 5,000 1,086
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    Rochester Electronics NTMFS4839NHT3G 5,000 1
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    NTMFS4839NHT3G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTMFS4839NHT3G On Semiconductor Power MOSFET 30 V, 66 A, Single N-Channel Original PDF

    NTMFS4839NHT3G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    4839Nh

    Abstract: NTMFS4839NHT1G
    Text: NTMFS4839NH Power MOSFET 30 V, 64 A, Single N-Channel, SO-8FL Features •ăLow RDS ON to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăLow RG •ăThese are Pb-Free Devices*


    Original     		NTMFS4839NH NTMFS4839NH/D 4839Nh NTMFS4839NHT1G PDF

    4839Nh

    Abstract: NTMFS4839NHT1G NTMFS4839NHT3G
    Text: NTMFS4839NH Power MOSFET 30 V, 64 A, Single N−Channel, SO−8FL Features • • • • • Low RDS ON to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices*


    Original     		NTMFS4839NH AND8195/D NTMFS4839NH/D 4839Nh NTMFS4839NHT1G NTMFS4839NHT3G PDF

    NTMFS4839NHT1G

    Abstract: NTMFS4839NHT3G v2354
    Text: NTMFS4839NH Power MOSFET 30 V, 64 A, Single N−Channel, SO−8FL Features • • • • • Low RDS ON to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices*


    Original     		NTMFS4839NH AND8195/D NTMFS4839NH/D NTMFS4839NHT1G NTMFS4839NHT3G v2354 PDF

    4839Nh

    Abstract: NTMFS4839NHT1G NTMFS4839NHT3G SO8FL
    Text: NTMFS4839NH Power MOSFET 30 V, 64 A, Single N-Channel, SO-8FL Features •ăLow RDS ON to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăLow RG •ăThese are Pb-Free Devices*


    Original     		NTMFS4839NH NTMFS4839NH/D 4839Nh NTMFS4839NHT1G NTMFS4839NHT3G SO8FL PDF

    Untitled

    Abstract: No abstract text available
    Text: NTMFS4839NH Power MOSFET 30 V, 64 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices


    Original     		NTMFS4839NH AND8195/D NTMFS4839NH/D PDF