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    4839N Search Results

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    4839N Price and Stock

    onsemi NTMFS4839NT1G

    MOSFET N-CH 30V 9.5A/64A 5DFN
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    Rochester Electronics NTMFS4839NT1G 268,110 1
    • 1 $0.26
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    • 100 $0.2444
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    Rochester Electronics LLC NTMFS4839NT1G

    MOSFET N-CH 30V 9.5A/64A 5DFN
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    DigiKey NTMFS4839NT1G Bulk 1,110
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    Rochester Electronics LLC NTMFS4839NHT3G

    MOSFET N-CH 30V 9.5A/64A 5DFN
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    DigiKey NTMFS4839NHT3G Bulk 888
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    onsemi NTMFS4839NHT3G

    MOSFET N-CH 30V 9.5A/64A 5DFN
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    Rochester Electronics NTMFS4839NHT3G 5,000 1
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    onsemi NTMFS4839NHT1G

    MOSFET N-CH 30V 9.5A/64A 5DFN
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    DigiKey NTMFS4839NHT1G Reel 1,500
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    Avnet Americas NTMFS4839NHT1G Reel 3,000
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    Bristol Electronics NTMFS4839NHT1G 1,498 8
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    • 100 $0.4388
    • 1000 $0.189
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    Rochester Electronics NTMFS4839NHT1G 735,321 1
    • 1 $0.2817
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    • 100 $0.2648
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    4839N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 4839N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL Features • • • • Low RDS ON to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		NTMFS4839N AND8195/D NTMFS4839N/D PDF

    4839N

    Abstract: on semiconductor NTMFS4839N datasheet NTMFS4839N NTMFS4839NT1G NTMFS4839NT3G
    Text: 4839N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL Features • • • • Low RDS ON to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		NTMFS4839N AND8195/D NTMFS4839N/D 4839N on semiconductor NTMFS4839N datasheet NTMFS4839N NTMFS4839NT1G NTMFS4839NT3G PDF

    4839Nh

    Abstract: NTMFS4839NHT1G
    Text: 4839NH Power MOSFET 30 V, 64 A, Single N-Channel, SO-8FL Features •ăLow RDS ON to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăLow RG •ăThese are Pb-Free Devices*


    Original     		NTMFS4839NH NTMFS4839NH/D 4839Nh NTMFS4839NHT1G PDF

    on semiconductor NTMFS4839N datasheet

    Abstract: NTMFS4839N NTMFS4839NT1G NTMFS4839NT3G
    Text: 4839N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL Features • • • • Low RDS ON to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		NTMFS4839N NTMFS4839N/D on semiconductor NTMFS4839N datasheet NTMFS4839N NTMFS4839NT1G NTMFS4839NT3G PDF

    4839N

    Abstract: NTMFS4839N NTMFS4839NT1G NTMFS4839NT3G
    Text: 4839N Power MOSFET 30 V, 66 A, Single N-Channel, SO-8FL Features •ăLow RDS ON to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original     		NTMFS4839N NTMFS4839N/D 4839N NTMFS4839N NTMFS4839NT1G NTMFS4839NT3G PDF

    4839Nh

    Abstract: NTMFS4839NHT1G NTMFS4839NHT3G
    Text: 4839NH Power MOSFET 30 V, 64 A, Single N−Channel, SO−8FL Features • • • • • Low RDS ON to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices*


    Original     		NTMFS4839NH AND8195/D NTMFS4839NH/D 4839Nh NTMFS4839NHT1G NTMFS4839NHT3G PDF

    NTMFS4839NHT1G

    Abstract: NTMFS4839NHT3G v2354
    Text: 4839NH Power MOSFET 30 V, 64 A, Single N−Channel, SO−8FL Features • • • • • Low RDS ON to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices*


    Original     		NTMFS4839NH AND8195/D NTMFS4839NH/D NTMFS4839NHT1G NTMFS4839NHT3G v2354 PDF

    4839Nh

    Abstract: NTMFS4839NHT1G NTMFS4839NHT3G SO8FL
    Text: 4839NH Power MOSFET 30 V, 64 A, Single N-Channel, SO-8FL Features •ăLow RDS ON to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăLow RG •ăThese are Pb-Free Devices*


    Original     		NTMFS4839NH NTMFS4839NH/D 4839Nh NTMFS4839NHT1G NTMFS4839NHT3G SO8FL PDF

    NTMFS4839N

    Abstract: NTMFS4839NT1G NTMFS4839NT3G
    Text: 4839N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL Features • • • • Low RDS ON to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		NTMFS4839N NTMFS4839N/D NTMFS4839N NTMFS4839NT1G NTMFS4839NT3G PDF

    NTMFS4839N

    Abstract: NTMFS4839NT1G NTMFS4839NT3G 4839N
    Text: 4839N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL Features • • • • Low RDS ON to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices* http://onsemi.com


    Original     		NTMFS4839N AND8195/D NTMFS4839N/D NTMFS4839N NTMFS4839NT1G NTMFS4839NT3G 4839N PDF

    Untitled

    Abstract: No abstract text available
    Text: 4839NH Power MOSFET 30 V, 64 A, Single N−Channel, SO−8FL Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG These are Pb−Free Devices


    Original     		NTMFS4839NH AND8195/D NTMFS4839NH/D PDF

    Untitled

    Abstract: No abstract text available
    Text: 4839N Power MOSFET 30 V, 66 A, Single N−Channel, SO−8FL Features • • • • Low RDS ON to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		NTMFS4839N AND8195/D NTMFS4839N/D PDF