AGR21045F Search Results

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Catalog Datasheet	MFG & Type	PDF	Document Tags
6603 Shenzhen Abstract: AGR19045E AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor J600 J600 transistor Text: Preliminary Data Sheet April 2004 AGR19045E 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19045E is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR19045E Hz--1990 AGR19045E DS04-077RFPP DS02-378RFPP) 6603 Shenzhen AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor J600 J600 transistor
J593 Abstract: AGR21030E AGR21030EF AGR21030EU JESD22-C101A J157 Text: Preliminary Data Sheet April 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21030E AGR21030E AGR21030EU AGR21030EF DS04-163RFPP DS04-065RFPP) J593 AGR21030EF AGR21030EU JESD22-C101A J157
AGERE Abstract: AGR21045F AGR21045U AGR26045E AGR26045EF AGR26045EU AGR26045XF AGR26045XU JESD22-C101A Text: Preliminary Product Brief April 2004 AGR26045E 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26045E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications	Original	PDF	AGR26045E AGR26045E AGR26045EU AGR26045EF PB04-080RFPP PB04-022RFPP) AGERE AGR21045F AGR21045U AGR26045EF AGR26045EU AGR26045XF AGR26045XU JESD22-C101A
Z9 TRANSISTOR SMD Abstract: AGR18045E JESD22-C101A agere c8 c1 transistor smd z9 grm216r71h transistor smd z8 Text: Preliminary Data Sheet November 2004 AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	PDF	AGR18045E AGR18045E DS03-186RFPP Z9 TRANSISTOR SMD JESD22-C101A agere c8 c1 transistor smd z9 grm216r71h transistor smd z8
AGR21045EF Abstract: AGR21045XF JESD22-C101A Text: Data Sheet June 2004 AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and	Original	PDF	AGR21045EF AGR21045EF DS04-241RFPP DS04-178RFPP) AGR21045XF JESD22-C101A
"RF Power Transistor" Abstract: AGR18030EF JESD22-C101A transistor equivalent table 557 Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	PDF	AGR18030EF AGR18030EF 21045F "RF Power Transistor" JESD22-C101A transistor equivalent table 557
Untitled Abstract: No abstract text available Text: Preliminary Data Sheet August 2003 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21045E AGR21045EU AGR21045EF DS02-380RFPP DS02-276RFPP)
j306 TRANSISTOR equivalent Abstract: transistor J306 zl 04 FET j306 Text: Preliminary Data Sheet November 2003 AGR19045E 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19045E is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR19045E Hz--1990 AGR19045EU AGR19045EF DS02-378RFPP j306 TRANSISTOR equivalent transistor J306 zl 04 FET j306
21045F Abstract: No abstract text available Text: Preliminary Data Sheet May 2004 AGR26045E 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26045E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,	Original	PDF	AGR26045E AGR26045EU AGR26045EF AGR26045Eerican DS04-110RFPP 21045F
transistor smd z9 Abstract: transistor smd z8 Z9 TRANSISTOR SMD 600F8R2CT250 J374 SMD Transistor z6 AGR18045E JESD22-C101A CRCW12064R75F100 vishay 1206 Text: AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	PDF	AGR18045E AGR18045E transistor smd z9 transistor smd z8 Z9 TRANSISTOR SMD 600F8R2CT250 J374 SMD Transistor z6 JESD22-C101A CRCW12064R75F100 vishay 1206
j306 TRANSISTOR equivalent Abstract: transistor J306 AGR19045E AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor z14 L Text: Preliminary Data Sheet November 2003 AGR19045E 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19045E is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR19045E Hz--1990 AGR19045E AGR19045EU AGR19045EF DS02-378RFPP j306 TRANSISTOR equivalent transistor J306 AGR19045EF AGR19045EU CDR33BX104AKWS JESD22-C101A transistor z14 L
"RF Power Amplifier" Abstract: AGERE AGR18030E AGR18030EF AGR18030EU AGR18030XF AGR18030XU AGR21045F AGR21045U JESD22-C101A Text: Product Brief April 2004 AGR18030E 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18030E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	PDF	AGR18030E AGR18030E PB04-077RFPP PB04-077RFPP) "RF Power Amplifier" AGERE AGR18030EF AGR18030EU AGR18030XF AGR18030XU AGR21045F AGR21045U JESD22-C101A
Untitled Abstract: No abstract text available Text: Product Brief November 2003 AGR18030E 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18030E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	PDF	AGR18030E T10-12, PB04-011RFPP PB03-170RFPP)
Untitled Abstract: No abstract text available Text: Preliminary Product Brief December 2003 AGR26045E 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26045E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide	Original	PDF	AGR26045E AGR26045EU AGR26045EF PB04-022RFPP

transistor smd z9 Abstract: Z9 TRANSISTOR SMD transistor smd z8 smd transistor Z10 WECO Electrical Connectors weco AGR18045E JESD22-C101A 600F8R2CT250 Text: AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	PDF	AGR18045E AGR18045E AGR18045EF AGR18045EU AGR21045F transistor smd z9 Z9 TRANSISTOR SMD transistor smd z8 smd transistor Z10 WECO Electrical Connectors weco JESD22-C101A 600F8R2CT250
transistor equivalent table 557 Abstract: 21045F Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	PDF	AGR18030EF DS04-204RFPP PB04-101RFPP) transistor equivalent table 557 21045F
AGR21045E Abstract: AGR21045EF AGR21045EU JESD22-C101A 100B8 Agere Systems Text: Preliminary Data Sheet April 2004 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21045E AGR21045E AGR21045EU AGR21045EF DS04-164RFPP DS04-037RFPP) AGR21045EF AGR21045EU JESD22-C101A 100B8 Agere Systems
AGR21030EF Abstract: AGR21030XF JESD22-C101A J622 Text: Preliminary Data Sheet June 2004 AGR21030EF 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21030EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21030EF AGR21030EF DS04-225RFPP DS04-200RFPP) AGR21030XF JESD22-C101A J622
AGR18030EF Abstract: JESD22-C101A Text: Preliminary Data Sheet November 2004 AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	PDF	AGR18030EF AGR18030EF DS04-204RFPP PB04-101RFPP) JESD22-C101A
J605 Abstract: No abstract text available Text: Preliminary Data Sheet December 2003 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21030E AGR21030EU AGR21030EF Powe10-12, DS04-065RFPP J605
J600 transistor Abstract: No abstract text available Text: Preliminary Data Sheet June 2004 AGR19045EF 45 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19045EF is a 45 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR19045EF Hz--1990 DS04-240RFPP DS04-077RFPP) J600 transistor
AGR26045EF Abstract: J500 JESD22-C101A Text: Preliminary Data Sheet June 2004 AGR26045EF 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26045EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,	Original	PDF	AGR26045EF AGR26045EF po8109-9138 DS04-226RFPP DS04-110RFPP) J500 JESD22-C101A
Untitled Abstract: No abstract text available Text: Product Brief June 2004 AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	PDF	AGR18030EF AGR18030EF P8109-9138 PB04-101RFPP PB04-077RFPP)
2.4 ghz mosfet Abstract: No abstract text available Text: Preliminary Data Sheet November 2003 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	PDF	AGR21030E AGR21030EU AGR21030EF Juncti10-12, DS04-036RFPP 2.4 ghz mosfet

AGR21045F Search Results

AGR21045F Datasheets Context Search

6603 Shenzhen

J593

AGERE

Z9 TRANSISTOR SMD

AGR21045EF

"RF Power Transistor"

Untitled

j306 TRANSISTOR equivalent

21045F

transistor smd z9

j306 TRANSISTOR equivalent

"RF Power Amplifier"

Untitled

Untitled

transistor smd z9

transistor equivalent table 557

AGR21045E

AGR21030EF

AGR18030EF

J605

J600 transistor

AGR26045EF

Untitled

2.4 ghz mosfet