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Advanced Semiconductor Inc AGR18030EF RF MOSFET Transistors 1.8-1.88GHz 33Watt Gain 15dB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	AGR18030EF					1 $51.65 10 $43.89 100 $39.58 1000 $38.17 10000 $38.17	Get Quote

AGR18030EF Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
AGR18030EF		Agere Systems	MOSFET		Original	PDF
AGR18030EF		Agere Systems	30 W, 1.805 GHz - 1.880 GHz, LDMOS RF Power Transistor		Original	PDF

AGR18030EF Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
"RF Power Transistor" Abstract: AGR18030EF JESD22-C101A transistor equivalent table 557 Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	AGR18030EF AGR18030EF 21045F "RF Power Transistor" JESD22-C101A transistor equivalent table 557	PDF
transistor equivalent table 557 Abstract: 21045F Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	AGR18030EF DS04-204RFPP PB04-101RFPP) transistor equivalent table 557 21045F	PDF
AGR18030EF Abstract: JESD22-C101A Text: Preliminary Data Sheet November 2004 AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	AGR18030EF AGR18030EF DS04-204RFPP PB04-101RFPP) JESD22-C101A	PDF
Untitled Abstract: No abstract text available Text: Product Brief June 2004 AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	AGR18030EF AGR18030EF P8109-9138 PB04-101RFPP PB04-077RFPP)	PDF
Untitled Abstract: No abstract text available Text: Preliminary Product Brief April 2003 AGR18030E 30 W, 1.805 GHz—1.880 GHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18030E is a 30 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	AGR18030E PB03-091RFPP PB03-063RFPP)	PDF
Untitled Abstract: No abstract text available Text: Product Brief August 2003 AGR18030E 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18030E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	AGR18030E PB03-170RFPP PB03-091RFPP)	PDF
"RF Power Amplifier" Abstract: AGERE AGR18030E AGR18030EF AGR18030EU AGR18030XF AGR18030XU AGR21045F AGR21045U JESD22-C101A Text: Product Brief April 2004 AGR18030E 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18030E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	AGR18030E AGR18030E PB04-077RFPP PB04-077RFPP) "RF Power Amplifier" AGERE AGR18030EF AGR18030EU AGR18030XF AGR18030XU AGR21045F AGR21045U JESD22-C101A	PDF
Untitled Abstract: No abstract text available Text: Product Brief November 2003 AGR18030E 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18030E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	AGR18030E T10-12, PB04-011RFPP PB03-170RFPP)	PDF
AGRA10EM Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station	Original	CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM	PDF