21045F
Abstract: AGR26045EF J500 JESD22-C101A c.d.m. technology acp transistor EP 430 TRANSISTOR MOSFET 2645
Text: AGR26045EF 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26045EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,
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AGR26045EF
AGR26045EF
ACGR26045EF
AGR26045XF
21045F
12-digit
21045F
J500
JESD22-C101A
c.d.m. technology acp
transistor EP 430
TRANSISTOR MOSFET 2645
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet June 2004 AGR26045EF 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26045EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,
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AGR26045EF
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AGR26045EF
Abstract: J500 JESD22-C101A
Text: Preliminary Data Sheet June 2004 AGR26045EF 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26045EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,
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AGR26045EF
AGR26045EF
po8109-9138
DS04-226RFPP
DS04-110RFPP)
J500
JESD22-C101A
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AGERE
Abstract: AGR21045F AGR21045U AGR26045E AGR26045EF AGR26045EU AGR26045XF AGR26045XU JESD22-C101A
Text: Preliminary Product Brief April 2004 AGR26045E 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26045E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications
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AGR26045E
AGR26045E
AGR26045EU
AGR26045EF
PB04-080RFPP
PB04-022RFPP)
AGERE
AGR21045F
AGR21045U
AGR26045EF
AGR26045EU
AGR26045XF
AGR26045XU
JESD22-C101A
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21045F
Abstract: No abstract text available
Text: Preliminary Data Sheet May 2004 AGR26045E 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26045E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,
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AGR26045E
AGR26045EU
AGR26045EF
AGR26045Eerican
DS04-110RFPP
21045F
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Brief December 2003 AGR26045E 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26045E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide
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AGR26045E
AGR26045EU
AGR26045EF
PB04-022RFPP
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AGRA10EM
Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station
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CA03-005RFPP-7
CA03-005RFPP-6)
AGRA10EM
APP550
APP550TM
AGR09085EF
APP550TM and APP530TM
400-kHz
agra 30
TAAD08JU2
AGR09030EF
AGR09030GUM
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