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    AGR21045EF Price and Stock

    Advanced Semiconductor Inc AGR21045EF

    RF MOSFET Transistors 2.11-2.17GHz 10Watt Gain 14.5dB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics AGR21045EF
    • 1 $51.65
    • 10 $43.89
    • 100 $39.58
    • 1000 $38.17
    • 10000 $38.17
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    AGR21045EF Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    AGR21045EF Agere Systems FET Transistor, 45W, 2.110GHz-2.170GHz, N-Channel E-Mode, Lateral MOSFET Transistor Original PDF
    AGR21045EF Agere Systems 45 W, 2.110 GHz - 2.170 GHz, N-Channel E-Mode, Lateral MOSFET Original PDF

    AGR21045EF Datasheets Context Search

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    AGR21045EF

    Abstract: AGR21045XF JESD22-C101A
    Text: Data Sheet June 2004 AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and


    Original     		PDF AGR21045EF AGR21045EF DS04-241RFPP DS04-178RFPP) AGR21045XF JESD22-C101A

    J964

    Abstract: AGR21045EF AGR21045XF JESD22-C101A
    Text: Data Sheet AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and


    Original     		PDF AGR21045EF AGR21045EF CGR21045EF AGR21045XF 21045F 12-digit J964 AGR21045XF JESD22-C101A

    J964

    Abstract: No abstract text available
    Text: Data Sheet June 2004 AGR21045EF 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21045EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access (W-CDMA), single and


    Original     		PDF AGR21045EF J964

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet August 2003 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21045E AGR21045EU AGR21045EF DS02-380RFPP DS02-276RFPP)

    AGR21045E

    Abstract: AGR21045EF AGR21045EU JESD22-C101A 178rf
    Text: Data Sheet May 2004 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21045E AGR21045E AGR21045EU AGR21045EF car18109-9138 DS04-178RFPP DS04-164RFPP) AGR21045EF AGR21045EU JESD22-C101A 178rf

    AGR21045E

    Abstract: AGR21045EF AGR21045EU JESD22-C101A 100B8 Agere Systems
    Text: Preliminary Data Sheet April 2004 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21045E AGR21045E AGR21045EU AGR21045EF DS04-164RFPP DS04-037RFPP) AGR21045EF AGR21045EU JESD22-C101A 100B8 Agere Systems

    AGRA10EM

    Abstract: APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM
    Text: RF Power Transistor Line RF Power Environment Agere’s RF LDMOS transistors are used in wireless base stations to boost voice, data, and video signals in various frequency ranges. They are targeted for second-generation 2G , 2.5-generation (2.5G), and thirdgeneration (3G) base station


    Original     		PDF CA03-005RFPP-7 CA03-005RFPP-6) AGRA10EM APP550 APP550TM AGR09085EF APP550TM and APP530TM 400-kHz agra 30 TAAD08JU2 AGR09030EF AGR09030GUM

    AGR21045E

    Abstract: AGR21045EF AGR21045EU JESD22-C101A IMD3 equivalent
    Text: Preliminary Data Sheet November 2003 AGR21045E 45 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21045E AGR21045E AGR21045EU AGR21045EF DS04-037RFPP DS02-380RFPP) AGR21045EF AGR21045EU JESD22-C101A IMD3 equivalent