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Kyocera AVX Components 100B820JW500XT1K CAP CER 82PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B820JW500XT1K	Digi-Reel	5,755		1	1 $7.4 10 $5.095 100 $3.8701 1000 $3.37184 10000 $3.37184	Buy Now
	100B820JW500XT1K	Cut Tape	5,755		1	1 $7.4 10 $5.095 100 $3.8701 1000 $3.37184 10000 $3.37184	Buy Now
	100B820JW500XT1K	Reel	2,000		1,000	1 - 10 - 100 - 1000 $3.21592 10000 $3.21592	Buy Now
Kyocera AVX Components 100B820JT500XT1K CAP CER 82PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B820JT500XT1K	Digi-Reel	5,284		1	1 $7.09 10 $4.873 100 $3.6922 1000 $3.21196 10000 $3.21196	Buy Now
	100B820JT500XT1K	Cut Tape	5,284		1	1 $7.09 10 $4.873 100 $3.6922 1000 $3.21196 10000 $3.21196	Buy Now
	100B820JT500XT1K	Reel	5,000		1,000	1 - 10 - 100 - 1000 $3.03633 10000 $3.03633	Buy Now
Kyocera AVX Components 100B8R2JW500XT CAP CER 8.2PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B8R2JW500XT	Cut Tape	4,355		1	1 $5.48 10 $3.711 100 $2.769 1000 $2.769 10000 $2.769	Buy Now
	100B8R2JW500XT	Digi-Reel	4,355		1	1 $5.48 10 $3.711 100 $2.769 1000 $2.769 10000 $2.769	Buy Now
	100B8R2JW500XT	Reel	1,500		500	1 - 10 - 100 - 1000 $2.00658 10000 $2.00658	Buy Now
Richardson RFPD	100B8R2JW500XT				500	1 - 10 - 100 - 1000 $2.31 10000 $2.05	Buy Now
Kyocera AVX Components 100B820JTN500XT1K CAP CER 82PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B820JTN500XT1K	Digi-Reel	3,878		1	1 $8.43 10 $5.847 100 $4.4754 1000 $3.91722 10000 $3.91722	Buy Now
	100B820JTN500XT1K	Cut Tape	3,878		1	1 $8.43 10 $5.847 100 $4.4754 1000 $3.91722 10000 $3.91722	Buy Now
	100B820JTN500XT1K	Reel	2,000		1,000	1 - 10 - 100 - 1000 $3.74256 10000 $3.59783	Buy Now
Avnet Americas	100B820JTN500XT1K	Tape w/Leader		16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Richardson RFPD	100B820JTN500XT1K				1,000	1 - 10 - 100 - 1000 $3.29 10000 $2.9	Buy Now
Kyocera AVX Components 100B8R2JT500XT CAP CER 8.2PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B8R2JT500XT	Digi-Reel	2,319		1	1 $5.13 10 $3.461 100 $2.5724 1000 $2.5724 10000 $2.5724	Buy Now
	100B8R2JT500XT	Cut Tape	2,319		1	1 $5.13 10 $3.461 100 $2.5724 1000 $2.5724 10000 $2.5724	Buy Now
	100B8R2JT500XT	Reel	1,500		500	1 - 10 - 100 - 1000 $1.8456 10000 $1.8456	Buy Now
Mouser Electronics	100B8R2JT500XT		477			1 $4.7 10 $4.05 100 $3.03 1000 $2.44 10000 $2.39	Buy Now
Richardson RFPD	100B8R2JT500XT		4,500		500	1 - 10 - 100 - 1000 $2.31 10000 $2.05	Buy Now

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100B8 Datasheets (26)

Part	Manufacturer	Description	Datasheet Type	PDF
100B820FT500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 82PF 500V P90 1111	Original	PDF
100B820FT500XT1K	American Technical Ceramics	Ceramic Capacitor 82PF 500V P90 1111	Original	PDF
100B820GT500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 82PF 500V P90 1111	Original	PDF
100B820GT500XT1K	American Technical Ceramics	Ceramic Capacitor 82PF 500V P90 1111	Original	PDF
100B820JP500XT	Kyocera AVX Components	RF CAPACITOR CERM 500V 1210	Original	PDF
100B820JT500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 82PF 500V P90 1111	Original	PDF
100B820JT500XT1K	American Technical Ceramics	Ceramic Capacitor 82PF 500V P90 1111	Original	PDF
100B820JTN500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 82PF 500V P90 1111	Original	PDF
100B820JTN500XT1K	American Technical Ceramics	Ceramic Capacitor 82PF 500V P90 1111	Original	PDF
100B820JW500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 82PF 500V P90 1111	Original	PDF
100B820JW500XT1K	American Technical Ceramics	Ceramic Capacitor 82PF 500V P90 1111	Original	PDF
100B8R2BT500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 8.2PF 500V P90 1111	Original	PDF
100B8R2BT500XT1K	American Technical Ceramics	Ceramic Capacitor 8.2PF 500V P90 1111	Original	PDF
100B8R2BTN500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 8.2PF 500V P90 1111	Original	PDF

100B8R2BTN500XT1K	American Technical Ceramics	Ceramic Capacitor 8.2PF 500V P90 1111	Original	PDF
100B8R2BW500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 8.2PF 500V P90 1111	Original	PDF
100B8R2BW500XT1K	American Technical Ceramics	Ceramic Capacitor 8.2PF 500V P90 1111	Original	PDF
100B8R2CT500XT	American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 8.2PF 500V P90 1111	Original	PDF
100B8R2CT500XT1K	American Technical Ceramics	Ceramic Capacitor 8.2PF 500V P90 1111	Original	PDF
100B8R2CW	Freescale Semiconductor	RF LDMOS Wideband Integrated Power Amplifiers	Original	PDF

100B8 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
J593 Abstract: AGR21030E AGR21030EF AGR21030EU JESD22-C101A J157 Text: Preliminary Data Sheet April 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	AGR21030E AGR21030E AGR21030EU AGR21030EF DS04-163RFPP DS04-065RFPP) J593 AGR21030EF AGR21030EU JESD22-C101A J157	PDF
transistor 7350 Abstract: agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A j496 Text: Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	AGR19060E Hz--1990 AGR19060E DS04-159RFPP DS04-078RFPP) transistor 7350 agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060EF AGR19060EU JESD22-C101A j496	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF6S9130H Rev. 0, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier	Original	MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3 MRF6S9130HR3	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common−	Original	MRF9080 MRF9080LR3 MRF9080LSR3	PDF
RM73B2B Abstract: 465B AN1955 MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3 RM73B2 Text: Freescale Semiconductor Technical Data Document Number: MRF5S19130H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3 RM73B2B 465B AN1955 MRF5S19130H MRF5S19130HSR3 RM73B2	PDF
J294 Abstract: 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HS Text: Freescale Semiconductor Technical Data Document Number: MRF7S19170H Rev. 0, 10/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19170HR3 MRF7S19170HSR3 Designed for CDMA base station applications with frequencies from 1930 to	Original	MRF7S19170H MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HR3 DataMRF7S19170H J294 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HSR3 MRF7S19170HS	PDF
ipc 9850 Abstract: J12-30 1000 watts power amp circuit diagram JESD22-A114 MW6IC2240GNBR1 MW6IC2240N MW6IC2240NBR1 Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 1, 1/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on -chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage	Original	MW6IC2240N MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 ipc 9850 J12-30 1000 watts power amp circuit diagram JESD22-A114 MW6IC2240GNBR1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110	Original	MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF5S9101 Rev. 3, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	MRF5S9101 MRF5S9101NR1/NBR1. MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101MR1	PDF
167D Abstract: TB167D ph c24 zener diode amidon BN-61-202 ph c20 zener diode ph c13 zener diode ph c24 zener Text: July 13, 2012 TB167D#7 Frequency=30-512MHz Pout=100W Gain=30dB Vds=28Vdc Idq=0.4+0.8A Efficiency=38 to 50% LQ801>LB501A PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com July 13, 2012 40 100 35 80 30 60 25 40 20 20 100	Original	TB167D 30-512MHz 28Vdc LQ801 LB501A 28Vdc, 0R0J12AFX 167D ph c24 zener diode amidon BN-61-202 ph c20 zener diode ph c13 zener diode ph c24 zener	PDF
Untitled Abstract: No abstract text available Text: MRF5S9101 Rev. 1, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with	Original	MRF5S9101 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1	PDF
mrf5s21090 Abstract: No abstract text available Text: MRF5S21090H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090HR3 MRF5S21090HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	MRF5S21090H MRF5S21090HR3 MRF5S21090HSR3 mrf5s21090	PDF
100B471JP200X Abstract: 100B110JP500X T495X106K035AS4394 400S CDR33BX104AKWS MRF19045R3 MRF19045SR3 100B8R2CP500X Text: MOTOROLA Order this document by MRF19045/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19045R3 MRF19045SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from	Original	MRF19045/D MRF19045R3 MRF19045SR3 MRF19045R3 100B471JP200X 100B110JP500X T495X106K035AS4394 400S CDR33BX104AKWS MRF19045SR3 100B8R2CP500X	PDF
MW4IC2230NB Abstract: j631 marking j130 J242 Text: Freescale Semiconductor Technical Data Document Number: MW4IC2230 Rev. 4, 8/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts	Original	MW4IC2230 MW4IC2230NBR1 MW4IC2230GNBR1 MW4IC2230MBR1 MW4IC2230GMBR1 MW4IC2230 MW4IC2230NB j631 marking j130 J242	PDF

tl249 Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242 Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6, H-34288-6, tl249 tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 tl250 TL242	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110	Original	MRF21090/D MRF21090 MRF21090S	PDF
j340 motorola make Abstract: No abstract text available Text: MOTOROLA Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110	Original	MRF21090/D MRF21090 MRF21090S MRF21090/D j340 motorola make	PDF
marking WB1 sot-23 Abstract: marking WB2 sot-23 transistor WB1 Text: Document Number: MRF9080 Rev. 7, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9080LSR3 Designed for GSM 900 MHz frequency band, the high gain and broadband performance of this device make it ideal for large-signal, common-source	Original	MRF9080 MRF9080LSR3 marking WB1 sot-23 marking WB2 sot-23 transistor WB1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 2, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications	Original	MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3 MRF6S9130H	PDF
RM73B2B Abstract: MARKING Z23 465B AN1955 MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3 Text: MRF5S19130H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3 RM73B2B MARKING Z23 465B AN1955 MRF5S19130H MRF5S19130HSR3	PDF
J161 mosfet transistor Abstract: MOSFET J161 100B6R8JW Text: Preliminary Data Sheet July 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband	Original	AGR21090E AGR21090EU AGR21090EF DS03-070RFPP DS02-276RFPP) J161 mosfet transistor MOSFET J161 100B6R8JW	PDF
93F2975 Abstract: marking 865 amplifier 100B120JP 865 marking amplifier Text: Freescale Semiconductor Technical Data Rev. 6, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance	Original	MRF9135LR3 MRF9135LSR3 93F2975 marking 865 amplifier 100B120JP 865 marking amplifier	PDF
0805 capacitor 10 pf Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 26 volt base station equipment.	Original	MRF9080LR3 MRF9080LSR3 0805 capacitor 10 pf	PDF
moc 3014 Abstract: MLT 22 522 MLT 22 543 MLT 22 615 BU 527 MLT 22 544 qs6612 Text: QS6612 Preliminary Data Sheet QS6612 10/1 OOBaseTX Mil Transceiver QS6612 for Category 5 Twisted Pair Cable ô 1.U U IS IIN U TVETE/ TTURES Single chip 10BaseT and 100BaseTX 10/100 transceiver with Mil interface and Auto- Negoti ation Built-in transmit waveshaping, receive filters,	OCR Scan	QS6612 QS6612 10BaseT 100BaseTX moc 3014 MLT 22 522 MLT 22 543 MLT 22 615 BU 527 MLT 22 544	PDF

100B8 Search Results

100B8 Price and Stock

Kyocera AVX Components 100B820JW500XT1K

Kyocera AVX Components 100B820JT500XT1K

Kyocera AVX Components 100B8R2JW500XT

Kyocera AVX Components 100B820JTN500XT1K

Kyocera AVX Components 100B8R2JT500XT

100B8 Datasheets (26)

100B8 Datasheets Context Search

J593

transistor 7350

Untitled

Untitled

RM73B2B

J294

ipc 9850

Untitled

Untitled

167D

Untitled

mrf5s21090

100B471JP200X

MW4IC2230NB

tl249

Untitled

j340 motorola make

marking WB1 sot-23

Untitled

RM73B2B

J161 mosfet transistor

93F2975

0805 capacitor 10 pf

moc 3014