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    Kyocera AVX Components 100B8R2JW500XT1K

    CAP CER 8.2PF 500V P90 1111
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    DigiKey 100B8R2JW500XT1K Reel 3,500 500
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    100B8R2JW500XT1K Cut Tape 1,900 1
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    Mouser Electronics 100B8R2JW500XT1K 221
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    Kyocera AVX Components 100B8R2BT500XT1K

    CAP CER 8.2PF 500V P90 1111
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    DigiKey 100B8R2BT500XT1K Reel 3,000 1,000
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    100B8R2BT500XT1K Cut Tape 208 1
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    Mouser Electronics 100B8R2BT500XT1K 1,696
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    Kyocera AVX Components 100B820JW500XT1K

    CAP CER 82PF 500V P90 1111
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    DigiKey 100B820JW500XT1K Reel 2,000 1,000
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    Kyocera AVX Components 100B8R2JT500XT1K

    CAP CER 8.2PF 500V P90 1111
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    DigiKey 100B8R2JT500XT1K Cut Tape 1,848 1
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    100B8R2JT500XT1K Reel 1,500 500
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    Kyocera AVX Components 100B8R2BW500XT1K

    CAP CER 8.2PF 500V P90 1111
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    DigiKey 100B8R2BW500XT1K Reel 1,000 1,000
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    100B8R2BW500XT1K Cut Tape 725 1
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    100B8 Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Type PDF
    100B820FT500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 82PF 500V P90 1111 Original PDF
    100B820FT500XT1K American Technical Ceramics Ceramic Capacitor 82PF 500V P90 1111 Original PDF
    100B820GT500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 82PF 500V P90 1111 Original PDF
    100B820GT500XT1K American Technical Ceramics Ceramic Capacitor 82PF 500V P90 1111 Original PDF
    100B820JP500XT Kyocera AVX Components RF CAPACITOR CERM 500V 1210 Original PDF
    100B820JT500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 82PF 500V P90 1111 Original PDF
    100B820JT500XT1K American Technical Ceramics Ceramic Capacitor 82PF 500V P90 1111 Original PDF
    100B820JTN500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 82PF 500V P90 1111 Original PDF
    100B820JTN500XT1K American Technical Ceramics Ceramic Capacitor 82PF 500V P90 1111 Original PDF
    100B820JW500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 82PF 500V P90 1111 Original PDF
    100B820JW500XT1K American Technical Ceramics Ceramic Capacitor 82PF 500V P90 1111 Original PDF
    100B8R2BT500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 8.2PF 500V P90 1111 Original PDF
    100B8R2BT500XT1K American Technical Ceramics Ceramic Capacitor 8.2PF 500V P90 1111 Original PDF
    100B8R2BTN500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 8.2PF 500V P90 1111 Original PDF
    100B8R2BTN500XT1K American Technical Ceramics Ceramic Capacitor 8.2PF 500V P90 1111 Original PDF
    100B8R2BW500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 8.2PF 500V P90 1111 Original PDF
    100B8R2BW500XT1K American Technical Ceramics Ceramic Capacitor 8.2PF 500V P90 1111 Original PDF
    100B8R2CT500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 8.2PF 500V P90 1111 Original PDF
    100B8R2CT500XT1K American Technical Ceramics Ceramic Capacitor 8.2PF 500V P90 1111 Original PDF
    100B8R2CW Freescale Semiconductor RF LDMOS Wideband Integrated Power Amplifiers Original PDF

    100B8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    J593

    Abstract: AGR21030E AGR21030EF AGR21030EU JESD22-C101A J157
    Text: Preliminary Data Sheet April 2004 AGR21030E 30 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21030E AGR21030E AGR21030EU AGR21030EF DS04-163RFPP DS04-065RFPP) J593 AGR21030EF AGR21030EU JESD22-C101A J157

    transistor 7350

    Abstract: agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060E AGR19060EF AGR19060EU JESD22-C101A j496
    Text: Preliminary Data Sheet April 2004 AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction GSM Features The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—


    Original     		PDF AGR19060E Hz--1990 AGR19060E DS04-159RFPP DS04-078RFPP) transistor 7350 agere c8 c1 transistor 7350 A 100B100JCA500X AGR19060EF AGR19060EU JESD22-C101A j496

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF6S9130H Rev. 0, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier


    Original     		PDF MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3 MRF6S9130HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common−


    Original     		PDF MRF9080 MRF9080LR3 MRF9080LSR3

    RM73B2B

    Abstract: 465B AN1955 MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3 RM73B2
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S19130H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3 RM73B2B 465B AN1955 MRF5S19130H MRF5S19130HSR3 RM73B2

    J294

    Abstract: 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HS
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19170H Rev. 0, 10/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19170HR3 MRF7S19170HSR3 Designed for CDMA base station applications with frequencies from 1930 to


    Original     		PDF MRF7S19170H MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HR3 DataMRF7S19170H J294 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HSR3 MRF7S19170HS

    ipc 9850

    Abstract: J12-30 1000 watts power amp circuit diagram JESD22-A114 MW6IC2240GNBR1 MW6IC2240N MW6IC2240NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2240N Rev. 1, 1/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2240N wideband integrated circuit is designed with on -chip matching that makes it usable from 2110 to 2170 MHz. This multi - stage


    Original     		PDF MW6IC2240N MW6IC2240N MW6IC2240NBR1 MW6IC2240GNBR1 ipc 9850 J12-30 1000 watts power amp circuit diagram JESD22-A114 MW6IC2240GNBR1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21100HR3 MRF5S21100HSR3 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF5S21100H MRF5S21100HR3 MRF5S21100HSR3 MRF5S21100HR3

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF5S9101 Rev. 3, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF5S9101NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRF5S9101 MRF5S9101NR1/NBR1. MRF5S9101MR1 MRF5S9101MBR1 MRF5S9101MR1

    167D

    Abstract: TB167D ph c24 zener diode amidon BN-61-202 ph c20 zener diode ph c13 zener diode ph c24 zener
    Text: July 13, 2012 TB167D#7 Frequency=30-512MHz Pout=100W Gain=30dB Vds=28Vdc Idq=0.4+0.8A Efficiency=38 to 50% LQ801>LB501A PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com July 13, 2012 40 100 35 80 30 60 25 40 20 20 100


    Original     		PDF TB167D 30-512MHz 28Vdc LQ801 LB501A 28Vdc, 0R0J12AFX 167D ph c24 zener diode amidon BN-61-202 ph c20 zener diode ph c13 zener diode ph c24 zener

    Untitled

    Abstract: No abstract text available
    Text: MRF5S9101 Rev. 1, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with


    Original     		PDF MRF5S9101 MRF5S9101NR1 MRF5S9101NBR1 MRF5S9101MR1 MRF5S9101MBR1

    mrf5s21090

    Abstract: No abstract text available
    Text: MRF5S21090H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090HR3 MRF5S21090HSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF5S21090H MRF5S21090HR3 MRF5S21090HSR3 mrf5s21090

    100B471JP200X

    Abstract: 100B110JP500X T495X106K035AS4394 400S CDR33BX104AKWS MRF19045R3 MRF19045SR3 100B8R2CP500X
    Text: MOTOROLA Order this document by MRF19045/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF19045R3 MRF19045SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from


    Original     		PDF MRF19045/D MRF19045R3 MRF19045SR3 MRF19045R3 100B471JP200X 100B110JP500X T495X106K035AS4394 400S CDR33BX104AKWS MRF19045SR3 100B8R2CP500X

    MW4IC2230NB

    Abstract: j631 marking j130 J242
    Text: Freescale Semiconductor Technical Data Document Number: MW4IC2230 Rev. 4, 8/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage 26 to 28 Volts


    Original     		PDF MW4IC2230 MW4IC2230NBR1 MW4IC2230GNBR1 MW4IC2230MBR1 MW4IC2230GMBR1 MW4IC2230 MW4IC2230NB j631 marking j130 J242

    tl249

    Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242
    Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PDF PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6, H-34288-6, tl249 tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 tl250 TL242

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110


    Original     		PDF MRF21090/D MRF21090 MRF21090S

    j340 motorola make

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110


    Original     		PDF MRF21090/D MRF21090 MRF21090S MRF21090/D j340 motorola make

    marking WB1 sot-23

    Abstract: marking WB2 sot-23 transistor WB1
    Text: Document Number: MRF9080 Rev. 7, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9080LSR3 Designed for GSM 900 MHz frequency band, the high gain and broadband performance of this device make it ideal for large-signal, common-source


    Original     		PDF MRF9080 MRF9080LSR3 marking WB1 sot-23 marking WB2 sot-23 transistor WB1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9130H Rev. 2, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9130HR3 MRF6S9130HSR3 Designed for N - CDMA, GSM and GSM EDGE base station applications


    Original     		PDF MRF6S9130H MRF6S9130HR3 MRF6S9130HSR3 MRF6S9130H

    RM73B2B

    Abstract: MARKING Z23 465B AN1955 MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3
    Text: MRF5S19130H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1900 to 2000 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF5S19130H MRF5S19130HR3 MRF5S19130HSR3 RM73B2B MARKING Z23 465B AN1955 MRF5S19130H MRF5S19130HSR3

    J161 mosfet transistor

    Abstract: MOSFET J161 100B6R8JW
    Text: Preliminary Data Sheet July 2003 AGR21090E 90 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband


    Original     		PDF AGR21090E AGR21090EU AGR21090EF DS03-070RFPP DS02-276RFPP) J161 mosfet transistor MOSFET J161 100B6R8JW

    93F2975

    Abstract: marking 865 amplifier 100B120JP 865 marking amplifier
    Text: Freescale Semiconductor Technical Data Rev. 6, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original     		PDF MRF9135LR3 MRF9135LSR3 93F2975 marking 865 amplifier 100B120JP 865 marking amplifier

    0805 capacitor 10 pf

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 26 volt base station equipment.


    Original     		PDF MRF9080LR3 MRF9080LSR3 0805 capacitor 10 pf

    moc 3014

    Abstract: MLT 22 522 MLT 22 543 MLT 22 615 BU 527 MLT 22 544 qs6612
    Text: QS6612 Preliminary Data Sheet QS6612 10/1 OOBaseTX Mil Transceiver QS6612 for Category 5 Twisted Pair Cable ô 1.U U IS IIN U TVETE/ TTURES Single chip 10BaseT and 100BaseTX 10/100 transceiver with Mil interface and Auto- Negoti­ ation Built-in transmit waveshaping, receive filters,


    OCR Scan     		PDF QS6612 QS6612 10BaseT 100BaseTX moc 3014 MLT 22 522 MLT 22 543 MLT 22 615 BU 527 MLT 22 544