AGERE
Abstract: AGR21045F AGR21045U AGR26045E AGR26045EF AGR26045EU AGR26045XF AGR26045XU JESD22-C101A
Text: Preliminary Product Brief April 2004 AGR26045E 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26045E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications
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AGR26045E
AGR26045E
AGR26045EU
AGR26045EF
PB04-080RFPP
PB04-022RFPP)
AGERE
AGR21045F
AGR21045U
AGR26045EF
AGR26045EU
AGR26045XF
AGR26045XU
JESD22-C101A
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PDF
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21045F
Abstract: No abstract text available
Text: Preliminary Data Sheet May 2004 AGR26045E 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26045E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,
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AGR26045E
AGR26045EU
AGR26045EF
AGR26045Eerican
DS04-110RFPP
21045F
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Brief December 2003 AGR26045E 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR26045E is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide
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Original
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AGR26045E
AGR26045EU
AGR26045EF
PB04-022RFPP
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PDF
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AGR26045EF
Abstract: J500 JESD22-C101A
Text: Preliminary Data Sheet June 2004 AGR26045EF 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26045EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,
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Original
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AGR26045EF
AGR26045EF
po8109-9138
DS04-226RFPP
DS04-110RFPP)
J500
JESD22-C101A
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PDF
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