Untitled
Abstract: No abstract text available
Text: Preliminary Product Brief April 2003 AGR18030E 30 W, 1.805 GHz—1.880 GHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18030E is a 30 W, 26 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—
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AGR18030E
PB03-091RFPP
PB03-063RFPP)
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Untitled
Abstract: No abstract text available
Text: Product Brief August 2003 AGR18030E 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18030E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication
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AGR18030E
PB03-170RFPP
PB03-091RFPP)
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"RF Power Amplifier"
Abstract: AGERE AGR18030E AGR18030EF AGR18030EU AGR18030XF AGR18030XU AGR21045F AGR21045U JESD22-C101A
Text: Product Brief April 2004 AGR18030E 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18030E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication
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AGR18030E
AGR18030E
PB04-077RFPP
PB04-077RFPP)
"RF Power Amplifier"
AGERE
AGR18030EF
AGR18030EU
AGR18030XF
AGR18030XU
AGR21045F
AGR21045U
JESD22-C101A
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Untitled
Abstract: No abstract text available
Text: Product Brief November 2003 AGR18030E 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18030E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication
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AGR18030E
T10-12,
PB04-011RFPP
PB03-170RFPP)
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