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    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UG34C322 4 4GTG 16M Bytes (4M x 32) DRAM 72Pin SODIMM based on 4M X 4 Features General Description The UG34C322(4)4GTG is a 4,149,304 bits by 32 SODIMM module.The UG34C322(4)4GTG is assembled using 8 pcs of 4M x 4 2K/4K refresh DRAMs in 24-pin TSOP package mounted on a 72pin printed circuit board.


    Original     		UG34C322 72Pin 24-pin 72pin) 1000mil) Re-Tek-265 PDF

    DQ111

    Abstract: DQ139 DQ131
    Text: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply


    Original     		UGSN7004A8HHF-256 2000mil) 256MB 256MB 200pin 128MB 200-Pin DIMM25 DQ120 DQ121 DQ111 DQ139 DQ131 PDF

    BA5 marking

    Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
    Text: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package


    Original     		HMD4M144D9WG 64Mbyte 4Mx144) 200-pin HMD4M144D9WG 144bit 4Mx16bit 50-pin 16bit BA5 marking DQ112-127 BA7 marking DQ113 BA6 marking BA6137 DQ99 PDF

    J32CG

    Abstract: 61a3 mosfet BCM5461KFB 61a3 58A6 bcm5461 60F10 L32SD DQ27152 A26B4
    Text: 1 2 4 3 5 6 7 TABLE OF CONTENTS F F PAGE 02 - BLOCK DIAGRAM PAGE 03 - 750GX ADDRESS/DATA BUSSES PAGE 04 - 750GX CONTROLS AND GROUND PAGE 05 - 750GX POWER AND DECOUPLING PAGE 06 - TSI108 PROCESSOR BUS INTERFACE PAGE 07 - TSI108 MEMORY INTERFACE PAGE 08 - DDR2 DIMM CONNECTOR SLOT 0


    Original     		750GX TSI108 RS232 NC7SZ00 J32CG 61a3 mosfet BCM5461KFB 61a3 58A6 bcm5461 60F10 L32SD DQ27152 A26B4 PDF

    Untitled

    Abstract: No abstract text available
    Text: UG08E14488HSG-6 128M Bytes 8M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U08E14488HSG-6 is a 8M x 144 200pin DIMM. The module is organized as a 8M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 18 pcs 8M x 8


    Original     		UG08E14488HSG-6 200Pin U08E14488HSG-6 400mil 16bit 240mil 2000mil) PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM332V400CS-L KMM332V410CS-L DRAM MODULE KMM332V400CS-L & KMM332V410CS-L with Fast Page Mode 4M x 32 DRAM SODIMM Using 4MX4, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332V40 1 0CS is a 4Mx32bits Dynamic RAM high density memory module. The Samsung


    Original     		KMM332V400CS-L KMM332V410CS-L KMM332V410CS-L KMM332V40 4Mx32bits 24-pin 72-pin PDF

    SL36S4B8M2F-A60

    Abstract: SL36T4B8M2F-A60 DQ27-30 DQ18-21
    Text: SL36 T/S 4B8M2F-A60 8M X 36 Bits DRAM SIMM with Extended Data Out (EDO) FEATURES • Performance range: tCAC tRC tRAC 60ns 15ns • • • • • • • • GENERAL DESCRIPTION The SiliconTech SL36(T/S)4B8M2F-A60 is a 8M x 36 bits Dynamic RAM (DRAM) Single In-line Memory Module (SIMM).


    Original     		4B8M2F-A60 4B8M2F-A60 24-pin 300-mil 104ns cycles/32ms A0-A10 DQ27-30 SL36S4B8M2F-A60 SL36T4B8M2F-A60 DQ27-30 DQ18-21 PDF

    DQ2060

    Abstract: DC1065 EB285 EBSA-285 R164 SA110 B20B20 A59A59 CPU-A13 CPUD22
    Text: A B C D COPYRIGHT C 8 1997 DIGITAL EQUIPMENT CORPORATION 8 16 17 18 19 20 21 sht sht sht sht sht sht 7 CHK CHANGE NO. REV CPU, CPU_, a Block Address X-Bus XBUF_, have PCI +3V Stand - +2V, - - - TAG_,RST_ - - 6 bidirects this 5 is Debug Port their Serial Spare


    Original     		ebsa285 220PF RS232 DQ2060 DC1065 EB285 EBSA-285 R164 SA110 B20B20 A59A59 CPU-A13 CPUD22 PDF

    HMD8M36M18

    Abstract: HMD8M36M18G
    Text: HANBit HMD8M36M18G 32Mbyte 8Mx36 72-pin FP with Parity MODE 2K Ref. SIMM Design 5V Part No. HMD8M36M18, HMD8M36M18G GENERAL DESCRIPTION The HMD8M36M18G is a 8M x 36bit dynamic RAM high density memory module. The module consists of sixteen CMOS 4M x 4bit DRAM in 24-pin SOJ packages and two CMOS 4Mx 4bit Quad-CAS DRAM in 28pin SOJ packages


    Original     		HMD8M36M18G 32Mbyte 8Mx36) 72-pin HMD8M36M18, HMD8M36M18G 36bit 24-pin 28pin HMD8M36M18 PDF

    ite 518 16pin soic

    Abstract: No abstract text available
    Text: DS1608 DALLAS SEMICONDUCTOR • Unique 1-wire interface requires only one port pin for communication • 3-wire I/O interface for high speed data communica­ tions vccn: 1 Pô n r 2 16 J L I IS n n X1 RST a t 3 14 DQ131 4 13 • Contains real-time clock/calendar in binary format


    OCR Scan     		DS1608 16-pin DS1608 16-PIN ite 518 16pin soic PDF

    Untitled

    Abstract: No abstract text available
    Text: STI368003 72-PIN SIMMS 8M X 36 BITS DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC ^RC STI368003-60 60ns 15ns 110ns STI368003-70 70ns 20ns 130ns • Fast Page Mode operation • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability


    OCR Scan     		STI368003 STI368003-60 STI368003-70 110ns 130ns 72-PIN STI368003 24pin 28-pin PDF

    31-oq

    Abstract: 7C342-25 CY7C342-35HMB 7C342-35 CY7C342 CY7C342B OQ11
    Text: CY7C342 CY7C342B rif CYPRESS 128-Macrocell M AX EPLD Features Functional Description • 128 macrocells in 8 LABs • 8 dedicated inputs, 52 bidirectional I/O pins • Programmable interconnect array • 0.8-micron double-metal CMOS EPROM technology CY7C342


    OCR Scan     		CY7C342 CY7C342B 128-Macrocell CY7C342) 65-micron CY7C342B) 68-pin CY7C342/CY7C342B CY7C342/ CY7C342B 31-oq 7C342-25 CY7C342-35HMB 7C342-35 OQ11 PDF

    Untitled

    Abstract: No abstract text available
    Text: M IC R O N 512K 512K X MT20D51240 40 DRAM MODULE 40 DRAM FAST PAGE MODE MT20D51240 LOW POWER, EXTENDED REFRESH (MT20D51240 L) FEATURES • • • • • • • • • PIN ASSIGNMENT (Top View) 72-pin single-in-line package High-performance, CMOS silicon-gate process.


    OCR Scan     		MT20D51240 MT20D51240) MT20D51240 72-pin 780mW 512-cycle T20D51240G PDF

    2m137

    Abstract: No abstract text available
    Text: MT90733 CM OS @ DS3 Framer DS3F MITEL Preliminary Information Features ISSUE 3_ January 1996 M aps broadband payloads in the DS3 form at O rdering Inform ation DS3 payload access in eith er bit-serial or n ibble-parallel m ode MT90733AP 68 Pin PLCC


    OCR Scan     		MT90733 MT90733AP T90733 bELH370 2m137 PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM332F400CS-L KMM332F41OCS-L DRAM MODULE KMM332F400CS-L & KMM332F410CS-L Fast Page with EDO Mode 4M x 32 DRAM SODIMM Using 4MX4, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F40 1 0CS is a 4Mx32bits Dynamic Part Identification


    OCR Scan     		KMM332F400CS-L KMM332F41OCS-L KMM332F410CS-L KMM332F40 4Mx32bits KMM332F400CS-L5/L6 24-pinTSOPII 72-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M IC R O N 4 MEG DRAM MODULE X M T10D440 40 DRAM M OD ULE 4 MEG x 40 DRAM FAST PAGE MODE FEATURES • • • • • Industry-standard 72-pin single in-line package High-performance CMOS silicon-gate process Single 5V ±10% pow er supply All device pins TTL-compatible


    OCR Scan     		72-pin 000mW 048-cycle 096-cycle T10D440 DE-17) MT10D440 PDF

    TME 57

    Abstract: DQ131 45VCci a81s DQ111 A5173
    Text: m EDI9F232256BC 1 2x256Kx32 SRAM Module x ELECTRONIC DESIGNI N C. 2x256Kx32 Static RAM CMOS, High SpeedModule Features The EDI9F232256B is a high speed 16 megabit Static RAM module organized as 2x256K words by 32 bits. This module is constructed from sixteen 256Kx4 Static RAMs in SOJ


    OCR Scan     		EDI9F232256BC 2x256Kx32 EDI9F232256B 2x256K 256Kx4 2322568RW TME 57 DQ131 45VCci a81s DQ111 A5173 PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM332F400BS-L KMM332F410BS-L DRAM MODULE KMM332F400BS-L & KMM332F410BS-L Fast Page with EDO Mode 4M x 32 DRAM SODIMM Using 4MX4, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F40 1 0BS is a 4Mx32bits Dynamic Part Identification


    OCR Scan     		KMM332F400BS-L KMM332F410BS-L KMM332F400BS-L KMM332F410BS-L KMM332F40 4Mx32bits 24-pinTSOPII 72-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM332V400AJ/AT KMM332V400AJ/AT Fast Page Mode 4Mx32 DRAM DIMM Low Power, 4K Refresh , 3.3V GENERAL DESCRIPTION FEATURES The S am sung K M M 332V 400A is a 4M bit x • Performance Range: tRAC 60ns 70ns 80ns 32 D ynam ic RAM high density m em ory module.


    OCR Scan     		KMM332V400AJ/AT 4Mx32 KMM332V400AJ/AT 24-pin KMM332V400A KMM332V400nly. KMM332V400AJ-L PDF

    KM44C1000CJ

    Abstract: KMM5361000C
    Text: DRAM MODULE 4 Mega Byte KMM5361000C2/C2G Fast Page Mode 1Mx36 DRAM SIMM Using Parity PLCC, 5V G EN E R A L D ESCRIPTIO N FEATURES The Samsung KMM5361000C2 is a 1M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5361000C2 consists of eight CMOS


    OCR Scan     		KMM5361000C2/C2G 1Mx36 KMM5361000C2 20-pin 18-pin 72-pin KM44C1000CJ KMM5361000C PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM332V400CS-L KMM332V41OCS-L DRAM MODULE KMM332V400CS-L & KMM332V410CS-L with Fast Page Mode 4M x 32 DRAM SODIMM Using 4MX4, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES T h e S a m s u n g K M M 3 3 2 V 4 0 1 0 C S is a 4 M x3 2 b its D yn a m ic


    OCR Scan     		KMM332V400CS-L KMM332V41OCS-L KMM332V400CS-L KMM332V410CS-L 400CS-L M332V40 PDF

    msi motherboard circuit diagram

    Abstract: MSI MOTHERBOARD schematic diagram MSI MOTHERBOARD SERVICE MANUAL amd MOTHERBOARD SERVICE MANUAL L64811 circuit diagram of msi motherboard MOTHERBOARD msi CIRCUIT diagram intel D102 motherboard sparkit-40 l64863
    Text: • 5304A04 LSI LOGIC 0013137 531 El LLC 53D4AD4 001313A 47fl LLC LSI Logic has derived the material in this manual, which describes the L64863 Clock Chip, from documents provided by Sun Microsystems, Inc. The chip described in this manual is guaranteed to function as described only when


    OCR Scan     		5304A04 53D4AD4 01313A L64863 SparKIT-40/SS D-102 msi motherboard circuit diagram MSI MOTHERBOARD schematic diagram MSI MOTHERBOARD SERVICE MANUAL amd MOTHERBOARD SERVICE MANUAL L64811 circuit diagram of msi motherboard MOTHERBOARD msi CIRCUIT diagram intel D102 motherboard sparkit-40 PDF

    DQ131

    Abstract: MT48LC16M16A2TG8E
    Text: ADVANCE M IC R O N * I 2 56 M b : xV TCCHW LOOY.INC. SYNCHRONOUS DRAM nV ,1,5 SD R A M MT48LC64M4A2 - 16 Meg x 4 x 4 banks MT48LC32M8A2 - 8 Meg x 8 x 4 banks MT48LC16M16A2 - 4 Meg x 16 x 4 banks For the latest data sh ee t revisions, p le a s e refer to the Micron


    OCR Scan     		192-cycle MT48LC64M4A2 MT48LC32M8A2 54-PIN 256Mb 256MSDRAM DQ131 MT48LC16M16A2TG8E PDF

    Untitled

    Abstract: No abstract text available
    Text: & M i c r o c h 2 4 A A 0 1 /0 2 i p 1K/2K 1.8V CMOS Serial EEPROMs PACKAGE TYPE nFEATURES • Single supply with operation down to 1.8V • Low power CMOS technology - 1 mA active current typical - 10 standby current typical at 5.5V - 3 |iA standby current typical at 1.8V


    OCR Scan     		DS21052E-page bl03201 0D131Sb PDF