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    OQ11 Price and Stock

    On-Shore Technology Inc OSTOQ115350

    TERM BLOCK HDR 11POS VERT 5.08MM
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    DigiKey OSTOQ115350 Bulk 75
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    On-Shore Technology Inc OSTOQ117051

    TERM BLOCK HDR 11POS 90DEG 5MM
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    DigiKey OSTOQ117051 Bulk 81
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    On-Shore Technology Inc OSTOQ111551

    TERM BLOCK HDR 11POS 90DEG 3.5MM
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    DigiKey OSTOQ111551 Bulk 35
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    • 100 $2.27514
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    On-Shore Technology Inc OSTOQ11A050

    TERM BLOCK HDR 11POS VERT 7.5MM
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    DigiKey OSTOQ11A050 Bulk 61
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    On-Shore Technology Inc OSTOQ111550

    TERM BLOCK HDR 11POS VERT 3.5MM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey OSTOQ111550 Bulk 35
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    OQ11 Datasheets (121)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    OQ1100000000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 11POS VERT 7.62MM Original PDF
    OQ1100010000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 11POS 7.62MM Original PDF
    OQ1100500000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 11POS VERT 7.62MM Original PDF
    OQ1100510000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 11POS 7.62MM Original PDF
    OQ1100800000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 11POS VERT 7.62MM Original PDF
    OQ1100810000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 11POS 7.62MM Original PDF
    OQ1101000000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 11POS VERT 7.62MM Original PDF
    OQ1101010000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 11POS 7.62MM Original PDF
    OQ1101500000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 11POS VERT 7.62MM Original PDF
    OQ1101510000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 11POS 7.62MM Original PDF
    OQ1101800000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 11POS VERT 7.62MM Original PDF
    OQ1101810000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 11POS 7.62MM Original PDF
    OQ1105000000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 11POS VERT 7.62MM Original PDF
    OQ1105010000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 11POS 7.62MM Original PDF
    OQ1105510000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 11POS 7.62MM Original PDF
    OQ1105800000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 11POS VERT 7.62MM Original PDF
    OQ1105810000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 11POS 7.62MM Original PDF
    OQ1112000000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 11POS VERT 3.5MM Original PDF
    OQ1112000300G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 11POS VERT 3.5MM Original PDF
    OQ1112010000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Headers, Plugs and Sockets - TERM BLOCK HDR 11POS 90DEG 3.5MM Original PDF
    ...

    OQ11 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    cq837

    Abstract: No abstract text available
    Text: 4J« *- »t TOSHIBA HYBRID D IG ITA L INTcGRATED CIRCUIT INTEGRATED CIRCUIT TO SHIBA THM 364080AS THM 364080ASG TECHNICAL DATA - 60. 70. 80, 10 - 60, 70, 80. 10 TENTATIVE DATA 4*194,304 W O R D S X 36 BIT D YN AM IC RA M MODULE DESCRIPTION The THM364080AS/ASG is a 4,194,304 words by 36 bits dynamic RA M module which assembled 36


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    364080AS 364080ASG THM364080AS/ASG TC514100ASJ 364080ASG A0-A10 THM36408QAS THM364080AS THM364080ASG cq837 PDF

    Untitled

    Abstract: No abstract text available
    Text: _u _ N AUER PHILIPS/DISCRETE • ObE D bbS3T31 00113bl T ■ BYV33F SERIES T-03-19 SCHOTTKY-BARRIER, ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in SOT-186 full-pack plastic envelopes,


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    bbS3T31 00113bl BYV33F T-03-19 OT-186 bb53T31 PDF

    Untitled

    Abstract: No abstract text available
    Text: %EDl EDI8M1664C50/60/70/85/100 Megabit SRAM Module, JEDEC Pinout 64Kx16 Static RAM CMOS, Module Features The EDI8M1664C is a high speed 64Kx16 CMOS Static RAM Module consisting of four 4 32Kx8 CMOS Static RAMs in leadless chip carriers, surface mounted onto a


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    EDI8M1664C50/60/70/85/100 64Kx16 EDI8M1664C 32Kx8 32Kx16bitseach. DQ8-DQ15) EDI8M81664C EDI8U1664C50/60/70/85/100 PDF

    ITT transistoren

    Abstract: nf schaltungen Schaltungen TDA4605-3 S910N diode sg 5 ts bus08a BD139 25EK ITT bzx 85
    Text: S IE M E N S ICs für die Unterhaltungs­ elektronik SNTs Ausgabe 5.86 S IE M E N S ICs für die Unterhaltungselektronik SNTs Datenblätter der Typen TDA 4600-3, TDA 4601, TDA 4601 D, TDA 4605 Problemlos bestellen mit der SBS-Preis- und Lagerliste F ür Kunden in d er B undesrepublik D eutschlan d und Berlin W est .


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    PDF

    A1HV

    Abstract: OQ11 SLTC
    Text: “H Y U N D A I 11 • M 11 W I I I H Y 5 1 1 8 2 6 0 J 5e r i e s 4 1 1 w n e us« n « A O o ä i i » .u w or* a o o M in o 1M X 16-bit CMOS nDRAM with 2CAS &WPB DESCRIPTION The HY5118260 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5118260


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    16-bit HY5118260 16-bit. 1A016-10-MAY94 GDD3543 HY5118260JC HY5118260SLJC A1HV OQ11 SLTC PDF

    Untitled

    Abstract: No abstract text available
    Text: IBM0316409C IBM0316809C IBM0316169C IBM03164B9C Prelim inary 16M b S y n c h r o n o u s D R A M -D ie Revision E Features • M ultiple Burst Read w ith Single W rite O ption • High Perform ance: CL=3 : CL=2 / 3 ; CL=3 i: c. 3 • Units ; • A utom atic and C ontrolled Precharge C om m and


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    IBM0316409C IBM0316809C IBM0316169C IBM03164B9C PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY I TECHNOLOGY. INC. 64Kx 16/18 SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 4 .5 ,5 ,6 ,7 ,8 and 9ns Fast OE# access time: 4.5,5 and 6ns


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    160-PIN D0172GG PDF

    MT58LC256K18

    Abstract: ct901
    Text: ADVANCE 256K SYNCHRONOUS SRAM 256Kx 16/18 SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View F ast access tim es: 4.5, 5, 5.5, 6 an d 7ns


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    MT58LC256K16/18F1 MT58LC256K MT58LC256K18 ct901 PDF

    SB6B

    Abstract: No abstract text available
    Text: HB56G232B/SB-6B/7B 2,097,152-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203-547A Z Rev. 1.0 Feb. 20,1996 Description The HB56G232 is a 2M x 32 dynamic RAM module, mounted 4 pieces o f 16-Mbit DRAM (HM5118160BJ) sealed in SOJ package. An outline o f the HB56G232 is 72-pin single in-line package. Therefore, the HB56G232 makes high


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    HB56G232B/SB-6B/7B 152-word 32-bit ADE-203-547A HB56G232 16-Mbit HM5118160BJ) 72-pin SB6B PDF

    Untitled

    Abstract: No abstract text available
    Text: M EDI8F32512C E D I S M x 3 2 SRAM Module ELECTOONC DOGNS. WC 512Kx32 Static RAM CMOS, High Speed Module F ea tu re s The EDI8F32512C is a high speed 16 megabit Static RAM module 512Kx32 bit CMOS Static organized as 512K words by 32 bits. This module is constructed


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    EDI8F32512C 512Kx32 EDI8F32512C 512Kx8 32512C EDI0F32512C PDF

    DQ14

    Abstract: d022 dq24
    Text: x32 Pinout Map for 64 and 72 pin ZIP Package Configurations 512KX32 256Kx32 128Kx32 64Kx32 PD3 PD3 PD0 PD0 PD2 PD0 DQ0 DQ0 DQ0 000 DQ0 DQ0 DQ0 DQ1 DQ1 DQ1 DQ1 DQ1 DQ1 DQ2 DQ2 DQ1 DQ2 DQ2 DQ2 0Q2 VSS PD0 DQ3 DQ3 DQ3 DQ3 DQ3 DQ3 DQ3 VCC VCC VCC VCC VCC VCC VCC


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    512KX32 256Kx32 128Kx32 64Kx32 1DQ18 DQ14 d022 dq24 PDF

    km418c256

    Abstract: M418C KM418C256A
    Text: CMOS DRAM KM418C256A/AL/ALL 256K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM418C256A/AUALL is a CMOS high speed 262,144 bit x 18 Dynamic Random Access Memory. Its design is optimized for high performance


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    KM418C256A/AL/ALL KM418C256A/AUALL-6 KM418C256A/AUALL-7 KM418C256A/AL/A 110ns 130ns 150ns KM418C256A/AL/ALL KM418C256A/AUALL km418c256 M418C KM418C256A PDF

    Untitled

    Abstract: No abstract text available
    Text: IB M 11 M 16730C B 16M x 72 D R A M M O D U LE Features • 1 6 8 Pin J E D E C S tandard, 8 Byte D ual In-line M e m o ry M odule • Au contacts • 1 6 M x 7 2 F ast P a g e M o d e D IM M • System P erform ance Benefits: • P erform ance: • O ptim ized for E C C applications


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    16730C 110ns 130ns 07H1729 MMDL18DSU-00 IBM11M16730CB PDF

    Untitled

    Abstract: No abstract text available
    Text: HYM72V64C736AT8 64Mx72, 32Mx8 based, PC133 DESCRIPTION The HYM72V64C736AT8 H-Series are high speed 3.3-Volt synchronous dynamic RAM Modules composed of eigh­ teen 32Mx8 bit Synchronous DRAMs in 54-pin TSOPII, two 48-pin SOP Register Buffers, one 24-pin SOP PLL and 8-pin


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    HYM72V64C736AT8 64Mx72, 32Mx8 PC133 HYM72V64C736AT8 54-pin 48-pin 24-pin 168-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: TMS28F008Axy,TMS28F800Axy 1048576 BY 8-B1T/524 288 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES • Organization . . . • 1 1 • 1048576 By 8 Bits 524288 By 16 Bits Array-Blocking Architecture - Two 8K-Byte Parameter Blocks - One 96K-Byte Main Block - Seven 128K-Byte Main Blocks


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    TMS28F008Axy TMS28F800Axy 8-B1T/524 16-BIT SMJS851 96K-Byte 128K-Byte 16K-Byte 28F008Axy70 28F008Axy80 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE m i c r o 512K x 16, 1 MEG x 8 BOOT BLOCK FLASH MEMORY n FLASH MEMORY MT28F800B3 FEATURES PIN ASSIGNMENT Top View • Eleven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Eight main memory blocks • 3V-only, dual-supply operation:


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    MT28F800B3 16KB/8K-word 110ns 100ns, 120ns 44-Pin 48-PIN 0020bfl2 80-PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC 42E ]> B 7Tb4142 G0110Ô5 1 I IS 16 K PRELIMINARY CMOS EEPROM KM29C010 128K/8 Bit CMOS Electrically Erasable PROM FEATURES GENERATION DESCRIPTION • Fast Read Access Time: 120ns • Single 5 Voltage Supply • 128 Byte Page W rite Operation


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    7Tb4142 G0110Ã KM29C010 128K/8 120ns b4142 PDF

    altera ep900

    Abstract: EP900 74HC EP910 altera EP910 ep900-2 ep9003
    Text: ALTERA 24E D CO R P • 05^5375 GOOllDD r r ^ «nom s 24-M A C R O C E LL EPLO t 7 I -^ -4 7 EP900 FEATURES GENERAL DESCRIPTION • • • • • • • The Altera EP900 is a pin-compatible version of the popular EP910 Erasable Programmable Logic Device EPLD . Available in 40-pin DIP and 44-pln


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    24-MACROCELL EP900 EP910, 20/yA 0STS37E NHt87i) altera ep900 EP900 74HC EP910 altera EP910 ep900-2 ep9003 PDF

    TDQ40

    Abstract: No abstract text available
    Text: SGRAM MODULE KMM966G512BQ P N KMM966G512BQ(P)N SGRAM SODIMM 512Kx64 SGRAM SODIMM based on 256Kx32,1K Refresh, 3.3V Synchronous Graphie RAMs FEATURES GENERAL DESCRIPTION • Performance Range Part NO. Max. Freq. (tee) I KMM966G512BQ(P)N-G8 125MHz (8ns) @CL=3


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    KMM966G512BQ 512Kx64 256Kx32 512bit 100pin 144pin KMM966G5128Q TDQ40 PDF

    Untitled

    Abstract: No abstract text available
    Text: EDI8F3232C W D I 32KX32 SRAM Module ELECTRONIC. DESIGNS, INC 32KX32Static RAM CHIOS, Hitfi Speed Module Features TTie EDI8F3232C is a high speed megabit Static RAM 32Kx32 bit CMOS Static module organized as 32Kx32. This module is constructed Random Access Memory


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    EDI8F3232C 32KX32 32KX32Static EDI8F3232C 32Kx32. four32Kx8 1f98ECO PDF

    IT2205

    Abstract: IBM0316809CT3-10 g618ac
    Text: IBM0316409CIBM0316809C IBM0316169C 16Mbit S yn ch ro n o u s DRAM Features • High Performance: • Multiple Burst Read with Single Write Option CAS latency = 3 -10 -11 -12 -13 Units • Automatic and Controlled Precharge Command fcK Clock Frequency 100 91


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    IBM0316409CIBM0316809C IBM0316169C 16Mbit cycles/64ms IBM0316809C IBM0316409C 400mil; IT2205 IBM0316809CT3-10 g618ac PDF

    Untitled

    Abstract: No abstract text available
    Text: GOULD 4055916 GOUL D IN C / GOULD A M I SEMI CONDUCTOR 03 DIV D • 03E MDSSTlb 1 1494 DQ114TM 0^ TABLE OF CONTENTS SECTION 1: DESIGN INFORMATION 1.1 CHOOSING AN ARRAY. 1-5 1.1.1 Determining Gate Count. 1-6


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    DQ114TM PDF

    M5M4V4260CTP-7

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs M5M4V4260CTP-6,-7,-6S,-7S FAST PAGE MODE 4194304-BIT 262144-WORD BY 16-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a family of 262144-word by 16-bit dynamic RAMs, fabricated with the high performance CMOS process, and Is ideal


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    M5M4V4260CTP-6 4194304-BIT 262144-WORD 16-BIT) 16-bit M5M4V4260CTP-7 PDF

    A733B

    Abstract: 3ac22 LM16 lcd QNDI02 GP021 PROJECT AT6 A1033B AH3R 3AA18 L8400F
    Text: 8 U10A HA*{31:3 \ — nur 3 A 18 B17 A17 \ H/4T5 \ HAff6 \ HDfO HDfft H P *2 y y / HPg3 HD?4 HD?5 HD?6 A2Q — HP» y y y y y y D?3 B19 tHAff 7 C ?Q A? > HP#f63:0j U10B HD?9 A?4 ma D?4 -B24. _A1S HD? 11 HD?12 HD? 13 y y / H D ? 14 y H P g lj Hb? i6 HP? i7


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    HAE24 MA327 L8400F MAX6654 M38859 L8400F A733B 3ac22 LM16 lcd QNDI02 GP021 PROJECT AT6 A1033B AH3R 3AA18 PDF