BUV52A
Abstract: No abstract text available
Text: BUV52A Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BUV52A
O204AA)
31-Jul-02
BUV52A
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BUV52A
Abstract: No abstract text available
Text: BUV52A Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BUV52A
O204AA)
18-Jun-02
BUV52A
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Untitled
Abstract: No abstract text available
Text: BUV52A Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V) I(C) Max. (A)20 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)500u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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BUV52A
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BUV52
Abstract: No abstract text available
Text: BUV52 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BUV52
O204AA)
31-Jul-02
BUV52
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Untitled
Abstract: No abstract text available
Text: BUV52 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BUV52
O204AA)
16-Jul-02
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BUV52A
Abstract: No abstract text available
Text: BUV52A MECHANICAL DATA Dimensions in mm inches 4 0 .0 1 (1 .5 7 5 ) M a x . 2 6 .6 7 (1 .0 5 0 ) M a x . FAST SWITCHING POWER TRANSISTOR 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . 2 2 .2 3 (0 .8 7 5 ) M a x . 1 1 .4 3 (0 .4 5 0 ) 6 .3 5 (0 .2 5 0 ) 1 2 .1 9 (0 .4 8 )
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BUV52A
O-204AA)
BUV52A
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Untitled
Abstract: No abstract text available
Text: BUV52A Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BUV52A
O204AA)
16-Jul-02
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Untitled
Abstract: No abstract text available
Text: BUV52 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V) I(C) Max. (A)30 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500u» @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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BUV52
time600n
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BUV52
Abstract: No abstract text available
Text: BUV52 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)
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BUV52
O204AA)
18-Jun-02
BUV52
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BUV48I
Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable
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2N3016
2N3021
2N3022
2N3023
2N3024
2N3025
2N3026
2N3055
2N3076
2N3171
BUV48I
BU808DXI
BD699
buv18a
BD241CFI
transistor 2SA1046
BUW52I
BU808DFI equivalent
BU724AS
2SA1046
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2N2773
Abstract: J175 BUS24A
Text: POWER SILICON NPN Item Number Part Number Min I C 5 10 15 20 Semicoa PPC Product Solitron See Index Sid St Dvcs See Index See Index Semelab Solitron PPC Product 30 30 30 30 30 30 30 30 30 30 150 150 150 150 160 160 160 175 175 175 10 15 15 20 20 20 20 30
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3204AE
StR-5/16
2N2773
J175
BUS24A
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DK53
Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
Text: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240
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2N3016
2N3021
2N3022
2N3023
2N3024
2N3025
2N3026
2N3055
2N3076
2N3171
DK53
dk52
2SC4977
MJE102
BD699
2SA1046
BU808DFI equivalent
2n3055 replacement
MJ2955 replacement
BUH513
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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PA0016
Abstract: STR11006 SO41P PIONEER PA0016 7 segment to bcd converter 74c915 SAJ141 74HC145 tms1122 IC PA0016 KOR 2310 transistor
Text: Utgåva 2005-03-24 Alla artiklar i katalogen finns normalt i lager men det tillkommer och utgår kontinuerligt. För aktuell information om prisvärt industriöverskott / surplus surfa in på: http://www.labb.se/surplus.htm Tel: 08-641 86 30 Fax: 08-641 87 30
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14-dagar
PA0016
STR11006
SO41P
PIONEER PA0016
7 segment to bcd converter 74c915
SAJ141
74HC145
tms1122
IC PA0016
KOR 2310 transistor
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Untitled
Abstract: No abstract text available
Text: 7TB3237 GD2ô7b7 5 • ' T 13 > 3 > - \ 3 SGS-THOMSON RfflD^m iO TT^BianOi_ S G S-THOMSON 3QE BUV52A D FAST SWITCHING POWER TRANSISTOR ■ ■ ■ ■ FAST SWITCHING TIMES LOW SWITCHING LOSSES LOW BASE CURRENT REQUIREMENTS VERY LOW SATURATION VOLTAGE AND
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7TB3237
BUV52A
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Untitled
Abstract: No abstract text available
Text: rz 7 s g s -th o m s o n ^ 7# BUV52A FAST SWITCHING POWER TRANSISTOR • ■ ■ ■ FAST SW ITCHING TIMES LOW SW ITCHING LOSSES LOW BASE CURRENT REQUIREMENTS VERY LOW SATURATION VOLTAGE AND HIGH GAIN A B S O L U T E M A XIM U M R ATING S Parameter Value Unit
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BUV52A
5ffl06ra@
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BUW23
Abstract: No abstract text available
Text: SEMELAB LTD 37E J> 6133187 DDDOOSb 7 • SMLB SEMELABI 1VpeN0- Option'111' Polarity Packa9e VcEO t ^ hFE« VCE/*C BUV18 BUV19 BUV20 BUV21 BUV22 HI-REL HI-REL HI-REL HI-REL HI-REL NPN NPN NPN NPN NPN 11 * * * * TO 3 T03 T03 TO 3 T03 60 80 125 200 250 90 50
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BUV18
BUV19
BUV20
BUV21
BUV22
20min
BUW23
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TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
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VCEO
Abstract: TO3 package
Text: ANALOG PRODUCTS T H O n S O N HIL ET S P A T I A U X PRODUCT 2TE D • TD2bô75 ÛG00Ü07 0 ■ o í S ” DESCRIPTION ü ü y « î se -> TO-3 modified package, VCEO sus = 60 v IC(sat) = 80 A ■ TO-3 package, v CEO(sus) = 200 V ICXsat) = 6 A ■ BUV42 TO-3 package,
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BUV18
BUV41
BUV42
BUV42A
BUV52
BUV60
BUV62
BUX10
BUX11
BUX12
VCEO
TO3 package
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mje520
Abstract: SGS1F444 SGSD00030 e13008 BUT23 2m3771 BUT62 BUW42AP 2n5337 BUW32AP
Text: S E L E C T IO N G U ID E B Y P A C K A G E GENERAL PURPOSE TRANSISTO RS SO T-32 P 4 Complemen hFE«* 'c A VCE (V) “CEsat » 'c (A) (V) BD434 MJE210 MJE370 BD436 2N4918 2N5193 50 70 25 50 30 25 2.00 0.50 1.00 2.00 0.50 1.50 1.0 1.0 1.0 1.0 1.0 2.0 0.50
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BD433
MJE200
MJE520
BD435
2N4921
2IM5190
2IM6037
MJE521
MJE180
BD135
SGS1F444
SGSD00030
e13008
BUT23
2m3771
BUT62
BUW42AP
2n5337
BUW32AP
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BUS11A
Abstract: BUV11 BUT91
Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No BUR51 BUR51S BUR52 BUR52S BUS11 BUS11 CECC BUS11A BUS11A CECC BUS 12 BUS12A BUS 13 BUS13A BUSI 4 BUS14A BUS50 BUS51 BUS52 BUT13 BUT13P BUT70 BUT70MC BUT72 BUT90 BUT90C BUT91 BUT92 BUT92A BUT92AS
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BUR51
BUR51S
BUR52
BUR52S
BUS11
BUS11A
BUS12A
BUS13A
BUV11
BUT91
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BUV52
Abstract: 100-C A6W 08
Text: 7 353537 0 0 5 5 753 T • S C S -T H O M S O N itn a r ia o H iig s S G S-TH0MS0N B U V 5 2 30E D FAST SWITCHING POWER TRANSISTOR ■ FAST SW ITCHING TIM ES ■ LOW SW ITCHING LOSSES ■ VER Y LOW SATURATION VOLTAGE AND HIGH GAIN FOR REDUCED LOAD OPERA
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BUV52
100-C
A6W 08
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JE350
Abstract: je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55
Text: INDUSTRY STANDARD SGS-THOMSON BD135 BD136 BD137 BD138 BD139 BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 BD140 BD159 BD160 BD165 BD166 BD167 BD159 SGS-THOMSON PAGE NEAREST BD157 BD158 2N5878 BD437 BD438 BD439 BD440 BD441 BD442 BD237 BD238 BD168
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BD135
BD136
BD137
BD138
BD139
BD140
BD142
BD144
BD157
BD158
JE350
je180
MJ13004
TP33C
BD325
JE172
BDX48
JE340
bd160
BUT55
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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