2SC5563
Abstract: No abstract text available
Text: 2SC5563 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5563 Dynamic Focus Applications Unit: mm • High voltage: VCEO = 1500 V • Small collector output capacitance: Cob = 2.0 pF typ. (VCB = 100 V) Absolute Maximum Ratings (Tc = 25°C) Characteristics
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2SC5563
SC-67
2-10R1A
2SC5563
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Untitled
Abstract: No abstract text available
Text: 2SC5355 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5355 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm • Excellent switching times: tr = 0.5 s max , tf = 0.3 μs (max) • High collector breakdown voltage: VCEO = 400 V
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2SC5355
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Untitled
Abstract: No abstract text available
Text: 2SA1805 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1805 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −140 V min • Complementary to 2SC4690 • Recommended for 70 W high fidelity audio frequency amplifier output
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2SA1805
2SC4690
2-16F1A
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Untitled
Abstract: No abstract text available
Text: 2SA1384 TOSHIBA Transistor Silicon PNP Triple Diffused Type PCT process 2SA1384 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V
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2SA1384
2SC3515
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2sd845
Abstract: 2SB755 2SB75 BASE15-0
Text: Inchange Semiconductor Product Specification 2SD845 Silicon NPN Power Transistors ・ DESCRIPTION ・With MT-200 package ・Complement to type 2SB755 ・High transition frequency ・High breakdown voltage :VCEO=150V min APPLICATIONS ・For power amplifier applications
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2SD845
MT-200
2SB755
MT-200)
2sd845
2SB755
2SB75
BASE15-0
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marking C15
Abstract: smd MARKING c17 2sa1612 MARKING SMD PNP TRANSISTOR V5090 smd transistor marking c17
Text: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SA1612 Features High DC current gain 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector to base voltage Parameter VCBO -120 V Collector to emitter voltage VCEO -120
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2SA1612
-120V,
-10mA
marking C15
smd MARKING c17
2sa1612
MARKING SMD PNP TRANSISTOR
V5090
smd transistor marking c17
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MJE5180
Abstract: 5182 MJE5181 MJE5182
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors MJE5180/5181/5182 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 120V(Min)- MJE5180 = 140V(Min)- MJE5181 = 160V(Min)- MJE5182 ·Low Saturation Voltage ·Complement to Type MJE5170/5171/5172
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MJE5180/5181/5182
MJE5180
MJE5181
MJE5182
MJE5170/5171/5172
MJE5180
5182
MJE5181
MJE5182
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15a transistor
Abstract: BUX40A
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX40A DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO SUS = 125V(Min) ·High Current Capability ·Good Linearity of hFE APPLICATIONS ·Designed for switching and linear applications in military
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BUX40A
10MHz
15a transistor
BUX40A
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BD307
Abstract: BU306 9v dc motor BU306F BU307F transistor 400v BD306 300V transistor npn 2a NPN Transistor 1A 400V transistor b 40 Ic-5A datasheet
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU306F/307F DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 300V(Min)- BD306F 400V(Min)- BD307F ·Collector Current-8A APPLICATIONS ·Designed for use in switching regulators, inverters, motor
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BU306F/307F
BD306F
BD307F
BU306F
BU307F
BD307
BU306
9v dc motor
BU306F
BU307F
transistor 400v
BD306
300V transistor npn 2a
NPN Transistor 1A 400V
transistor b 40 Ic-5A datasheet
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2SC2591
Abstract: 2SC2592
Text: Inchange Semiconductor Product Specification 2SC2591 2SC2592 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA1111/1112 ・Good linearity of hFE ・High VCEO APPLICATIONS ・For audio frequency, high power amplifiers application
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2SC2591
2SC2592
O-220
2SA1111/1112
O-220)
2SC2591
500mA
2SC2592
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FZT458
Abstract: No abstract text available
Text: Transistors SMD Type NPN Silicon Planar High Voltage Transistor FZT458 SOT-223 Unit: mm 0.1max +0.05 0.90-0.05 Features 400 Volt VCEO +0.1 3.00-0.1 +0.15 1.65-0.15 +0.2 3.50-0.2 6.50 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 Collector 3 2 +0.1 0.70-0.1
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FZT458
OT-223
100mA,
20MHz
-10mA
FZT458
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2SC1913
Abstract: 2SC1913A
Text: Inchange Semiconductor Product Specification 2SC1913 2SC1913A Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA913/913A ・Large collector power dissipation ・High VCEO APPLICATIONS ・Audio frequency high power driver
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2SC1913
2SC1913A
O-220
2SA913/913A
O-220)
2SC1913
2SC1913A
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vbe 10v, vce 500v NPN Transistor
Abstract: 2SC2415 NPN Transistor 1A 400V power transistor 3A vce 500v NPN Transistor
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2415 DESCRIPTION •High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO SUS = 400V (Min) APPLICATIONS ·Designed for high speed power switching applications.
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2SC2415
vbe 10v, vce 500v NPN Transistor
2SC2415
NPN Transistor 1A 400V
power transistor 3A
vce 500v NPN Transistor
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SMD TRANSISTOR MARKING Dd
Abstract: SMD TRANSISTOR MARKING DE MARKING SMD NPN TRANSISTOR BR SMD TRANSISTOR MARKING BR 2SD1419
Text: Transistors SMD Type NPN Silicon epitaxial Transistor 2SD1419 Features Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 100 V Emitter to base voltage
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2SD1419
SMD TRANSISTOR MARKING Dd
SMD TRANSISTOR MARKING DE
MARKING SMD NPN TRANSISTOR BR
SMD TRANSISTOR MARKING BR
2SD1419
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BD501
Abstract: BD501B
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BD501/B DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 50V(Min) 80V(Min) ·High Power Dissipation APPLICATIONS ·Designed for use in high power audio amplifiers utilizing
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BD501/B
BD501
BD501B
BD501
BD501B
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2N5551
Abstract: No abstract text available
Text: TOSHIBA TRANSISTOR 2N5551 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VCBO=180V, VcEO=160V . Low Leakage Current : IcBO= 50nA(Max.) @ VcB=120V . Low Saturation Voltage
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2N5551
100MHz
2N5551
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2SC2230
Abstract: c2230a C2230
Text: SILICON NPN T R IP LE DIFFU SED T Y P E P C T P R O C E S S 2SC2230,2SC2230A HIGH VOLTAGE G ENERAL AM PLIFIER APPLICATIONS. CO LO R TV CLASS B S O U N D OUTPUT APPLICATIONS. • • High Voltage : VcEO = 180V (2SC2230A) High DC Current Gain. M A X IM U M RATINGS (Ta = 25°C)
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2SC2230
2SC2230A
2SC2230A)
2SC2230A
C2230
c2230a
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Untitled
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3666 AUDIO POWER AMPLIFIER APPLICATIONS. • High DC Current Gain: MAXIMUM RATINGS Unit in mm hpE=100~320 (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage v CBO 30 V Collector-Emitter Voltage VCEO
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2SC3666
100mA
800mA
800mA,
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TLP570
Abstract: tlp371
Text: F7 Typa No. Pin Configuration TLP371 TLP372 Features CTR % eiF Min. im A l V c e c d (V) Safety Standard (Note 2) (V) BVs (Vrms) 100 300 5,000 O 1.2 100 35 2,500 o 1.2 100 300 5,000 o eie Max. (mA) 1,000 1.2 1,000 1,000 VCEO UL TClV VDE BSI High V ceo (300V)
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TLP371
TLP372
TLP570
TLP571
TLP627
TLP627-2
TLP627-3
TLP627-4
TLP570
tlp371
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mpsa92
Abstract: mpsa93 MPS-A92 SA42 transistor MPSA92 MPS-A93 mpsa92 TRANSISTOR
Text: TOSHIBA TRANSISTOR MPSA92, 93 SILICON PNP TRANSISTOR FOR HIGH VOLTAGE APPLICATION FEATURES: • High Voltage : VCEO=-300V MPSA92 VCEO=“ 200V (MPSA93) • Low Saturation Voltage : ^CE (sat)= _ 0 • (Max.) @ Iq =-20 itiA lB=-2mA • Low Collector Output Capacitance
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MPSA92,
-300V
MPSA92)
MPSA93)
MPSA43
MPSA92
MPSA93
MPS-A92
SA42
transistor MPSA92
MPS-A93
mpsa92 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: 2SC4116 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C 4 1 16 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. • High Voltage and High Current : VcEO = 50V, Ic = 150mA (Max.) Excellent hpg Linearity : hpE (Ic = 0.1mA) / hpg (Ic = 2mA) = 0.95 (Typ.)
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2SC4116
150mA
2SA1586
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MPS-92
Abstract: mps92 MPS93
Text: TOSHIBA MPS92 MPS93 Discrete Semiconductors Silicon PNPTransistor For High Voltage Application Features • High Voltage - Vceo = -300V MPSA92 - Vceo = -200V (MPSA93) • Low Saturation Voltage " VcE(sat) = (Max-) @ b = -20mA, lB = -2mA • Low Collector Output Capacitance
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MPS92
MPS93
-300V
MPSA92)
-200V
MPSA93)
-20mA,
MPSA42,
MPS-92
MPS93
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2-16C1A
Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL TYPE DARLINGTON POWER 5 5 8 U nit in mm POWER AMPLIFIER APPLICATIONS 15 9 V i A X • • )S3.2 ♦ 0.2 High Breakdown Voltage : V cE O = —140V (Min.) Complementary to 2SD2387 M A X IM U M RATINGS (Ta = 25°C) SYMBOL VCBO VCEO v EBO
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--140V
2SD2387
100fl
-140V
--50mA,
--12A
2-16C1A
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Untitled
Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA1899 POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AM PLIFIER APPLICATIONS. • Complementary to 2SC5052. M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT VCBO -1 2 0 V Collector-Emitter Voltage VCEO
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2SA1899
2SC5052.
----120V,
--10mA,
--100mA
--500mA,
--50mA
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