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    BD235 PHILIPS

    Abstract: bd233 T BD233 bd237 philips BD234 BD237-10 BD235 BD236 BD237 BD238
    Text: BD233 BD235 BD237 PHILIPS INTERNATIONAL SbE T> • 711002b 004205*4 725 ■ P H I N T - 3 3 - O SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a S O T -3 2 p la stic envelope intended fo r use in te levision and au d io a m p lifie r c irc u its


    OCR Scan     		PDF BD233 BD235 BD237 711002b aSOT-32 BD234, BD236 BD238. BD233 BD235 BD235 PHILIPS bd233 T bd237 philips BD234 BD237-10 BD237 BD238

    BDT61

    Abstract: dg43550 BDT60 BDT61B QGM3221 diagram DARLINGTON
    Text: BDT61;61A BDT61B;61C PHILIPS INTERN A T I O N A L SbE D I 711002b 00M3250 A44 W p H l N SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in m onolithic Darlington circuit for audio o utpu t stages and general purpose am plifier applications.


    OCR Scan     		PDF BDT61 BDT61B 711002b DG43550 BDT60, 711005b 7Z82099 dg43550 BDT60 QGM3221 diagram DARLINGTON

    T3D DIODE

    Abstract: T3D 77 T3D 65 diode Diode T3D 54 T3D 54 DIODE T3D 77 diode T3D 01 DIODE Diode T3D 57 BDT65 BDT64C
    Text: BDT65; 65A BDT65B; 65C V PHILIPS INTERNATIONAL SLE ]> • 71ÌG02L 00432^0 Ibfl M P H I N SILICON DARLINGTON POWER TRANSISTORS N P N e p itax ial base transistors in m o n o lith ic D arlin g to n c irc u it fo r au d io o u tp u t stages and general purpose a m p lifie r and sw itching ap plication s. T 0 - 2 2 0 pla stic envelope. P N P com p lem ents are


    OCR Scan     		PDF BDT65; BDT65B; T0-220 BDT64; BDT64A; BDT64B BDT64C. BDT65 7z82329 T3D DIODE T3D 77 T3D 65 diode Diode T3D 54 T3D 54 DIODE T3D 77 diode T3D 01 DIODE Diode T3D 57 BDT64C

    transistor 1BT

    Abstract: BDT62C PHILIPS npn 1bt BDT63B
    Text: BDT63; 63A BDT63B; 63C _ PHILIPS "INTERNATIONAL" StEB A • v _ 7110flEb 0043551, TTT - PHIN T - J J - Z 7 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general


    OCR Scan     		PDF BDT63; BDT63B; 7110flEb T0-220 BDT62, BDT62A; BDT62B BDT62C. BDT63 T-33-29 transistor 1BT BDT62C PHILIPS npn 1bt BDT63B

    bdt65b

    Abstract: No abstract text available
    Text: BDT65; 65A BDT65B; 65C V PHILIPS INTERNATIONAL SbE D • 7 1 I G Ö 5 L □ □ 4 3 2 ‘ia Ibfl « P H I N SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circuit for audio output stages and general purpose am plifier and switching applications. T 0-2 2 0 plastic envelope. PNP complements are


    OCR Scan     		PDF BDT65; BDT65B; BDT64; BDT65 O-220. 7Z82329 bdt65b

    Untitled

    Abstract: No abstract text available
    Text: BDV91 BDV93 BDV95 _y v SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N epitaxial base power transistors in the plastic SOT-93 envelope. These transistors are intended for use in audio output stages and general amplifier and switching applications.


    OCR Scan     		PDF BDV91 BDV93 BDV95 OT-93 BDV92, BDV94 BDV96. bbS3T31

    BD237

    Abstract: Audio amplifier circuits bd238 BD233 BD234 BD235 BD236
    Text: BD233 BD235 BD237 SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a SOT-32 plastic envelope intended fo r use in television and audio am plifier circuits where high peak powers can occur. P-N-P complements are BD234, BD236 and BD238. Matched pairs


    OCR Scan     		PDF BD233 BD235 BD237 OT-32 BD234, BD236 BD238. BD233 BD235 BD237 Audio amplifier circuits bd238 BD234

    TS-7P

    Abstract: T-33-Z bdv65
    Text: BDV65; 65A BDV65B; 65C SbE D PHILIPS INTERNATIONAL • 7110fl2b 0D433b0 3D1 H P H I N T'33-Z SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circu it fo r audio o u tp u t stages and general am plifier and switching applications. PNP complements are BDV64, 64B and 64C.


    OCR Scan     		PDF BDV65; BDV65B; 7110fl2b 0D433b0 BDV64, BDV65 OT-93. BDV65j 711Dfl2b DD433bb TS-7P T-33-Z

    MM1185

    Abstract: BDV65 BDV65B PHILIPS 1980 BDV65, BDV64 T-33-Z dv65 BDV64 LP 7510 7Z82768
    Text: BDV65; 65A BDV65B; 65C PHILIPS INTERNATIONAL SbE D • 711DÛ2b 0D433L0 301 « P H I N T - 3 3 - Z SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial base transistors in m onolithic Darlington circuit fo r audio o utpu t stages and general am plifier and switching applications. PNP complements are B D V 64, 64B and 64C.


    OCR Scan     		PDF BDV65; BDV65B; 0D433L0 T-33-Z BDV64, BDV65 7Z77501 MM1185 BDV65 BDV65B PHILIPS 1980 BDV65, BDV64 dv65 BDV64 LP 7510 7Z82768

    bdx67

    Abstract: transistor bdx67
    Text: N AMER PHILIPS/DISCRETE E5E bL.53‘ 3> 1 Q O nW 7 • BDX67; 67A BDX67B; 67C T -3 3 -3 .7 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-3 envelope. P-N-P complements are BDX66, BDX66A,


    OCR Scan     		PDF BDX67; BDX67B; BDX66, BDX66A, BDX66B BDX66C. BDX67 temperabb53T31 T-33-29 bdx67 transistor bdx67

    bd239a ti

    Abstract: No abstract text available
    Text: 11 N AMER PHILIPS/DISCRETE . bL>53T31 0011363 5 • 2SE D BD239; BD239A BD239B; BD239C SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended fo r use in audio output stages, general amplifier and high-speed switching applications.P-N-P complements are BD240; 240A; 240B and BD240C.


    OCR Scan     		PDF 53T31 BD239; BD239A BD239B; BD239C BD240; BD240C. BD239 bd239a ti

    BDT63

    Abstract: BDT62
    Text: BDT63; 63A BDT63B; 63C _A SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-220 plastic envelope. P-N-P complements are BDT62,


    OCR Scan     		PDF BDT63; BDT63B; O-220 BDT62, BDT62A; BDT62B BDT62C. BDT63 bS3T31 BDT63 BDT62

    BDT61

    Abstract: transistor BD 512 BDT60 BDT61B IEC134 1FC15
    Text: BDT61;61A BDT61B;61C _ JV SILICON DARLINGTON POWER TRANSISTORS N-P-N silicon power transistors in monolithic Darlington circuit for audio output stages and general purpose am plifier applications. P-N-P complements are B D T 60, 60A , 60B and 60C. Q U IC K R E F E R E N C E D A T A


    OCR Scan     		PDF BDT61 BDT61B BDT60, T0-220. mount986 March-1986 bb53T31 GD34b03 transistor BD 512 BDT60 IEC134 1FC15

    b0951

    Abstract: BD951 b0949 B0950 LL90 BD949 BD950 BD953 BD955 IEC134
    Text: BD949; 951 BD953; 955 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic TO-220 envelope. W ith th e ir p-n-p complements BD950; 952; 954 and 956 they are intended fo r use in a wide range o f power amplifiers and fo r switching applications.


    OCR Scan     		PDF BD949; BD953; O-220 BD950; BD949 BD951 BD953 BD955 O-220. 7Z82141 b0951 b0949 B0950 LL90 BD950 BD955 IEC134

    BD679

    Abstract: BD675 BD680 T-988 BD676 BD678 BD682 BD684 D0344
    Text: BD675; 677 BD679; 681; 683 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in monolithic Darlington circuit fo r audio and video applications; SOT-32 plastic envelope. P-N-P complements are BD676, BD678, BD680, BD682 and BD684. QUICK REFERENCE DATA


    OCR Scan     		PDF BD675; BD679 OT-32 BD676, BD678, BD680, BD682 BD684. BD675 BD680 T-988 BD676 BD678 BD684 D0344

    Untitled

    Abstract: No abstract text available
    Text: TIP29; 29A TIP29B; 29C _ J K. SILICON EPITAXIAL BASE POWER TRANSISTORS NPN silicon transistors in a plastic envelope intended for use in output stages o f audio and television amplifier circuits where high peak powers can occur. PNP complements are TIP30 series.


    OCR Scan     		PDF TIP29; TIP29B; TIP30 TIP29 7Z78131 0D34flfl0

    FT501

    Abstract: No abstract text available
    Text: BD949; 951 BD953; 955 5bE D PHILIPS INTERNATIONAL • 711002b □ 0 4 3 0 t]fl b^7 H P H I N T-J3-H SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic T 0-22 0 envelope. With their p-n-p complements BD950; 952; 954 and 956 they are intended for use in a wide range of power amplifiers and for switching applications.


    OCR Scan     		PDF BD949; BD953; 711002b BD950; BD949 BD951 BD953 7110fl2b FT501

    BD233

    Abstract: FT501
    Text: BD233 BD235 BD237 PHILIPS INTERNATIONAL SbE D • 711üa2b 0042054 725 » P H I N T - 3 3 - 0 ^ SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a SO T-32 plastic envelope intended fo r use in television and audio am plifier circuits where high peak powers can occur. P-N-P complements are B D 234, B D 236 and B D238. Matched pairs


    OCR Scan     		PDF BD233 BD235 BD237 711002b 711062b FT501

    BDT93

    Abstract: BDT91 BDT95 BDT94 BDT92 BDT96 3313
    Text: BDT91 BDT93 BDT95 PHILIPS INTERNATIONAL 5bE J> I 7110fl2Li 0043322 STö M P H I N SILICON EPITAXIAL BASE POWER TRANSISTORS N -P -N transistors in a plastic envelope intended fo r use in audio o u tp u t stages and general a m p lifie r and sw itching applications.


    OCR Scan     		PDF BDT91 BDT93 BDT95 BDT92, BDT94 BDT96. BDT91 BDT93 711002b BDT95 BDT92 BDT96 3313

    BDT31

    Abstract: BDT31B BDT32 TIP31 T98-1
    Text: N AMER PHILIPS/DISCRETE 25E D • bbS3T31 O G n b ö l - I I S ■ BDT31; A BDT31B; C r - 3 3 - ii SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in a plastic envelope intended fo r use in audio o u tp u t stages and genera! am plifier and switching applications. The TIP31 series is an equivalent type, P-N-P complements are BDT32 series.


    OCR Scan     		PDF bb53131 BDT31; BDT31B; r-33-n TIP31 BDT32 BDT31 T-33-11 BDT31B T98-1

    BDX95

    Abstract: BDX93 BDX94 BDX91 BDX96 BDX92 TO3 philips bdx96 philips
    Text: . m b b S B ' m 0050051 ì • N AMER PHILIPS/DISCRETE BDX91 BDX93 BDX95 5SE D T - 23-/3 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N transistors in T O -3 envelope for audio output stages and general-amplifier and switching applications. P-N-P complements are B D X 92 , B D X 94 and B D X 96 .


    OCR Scan     		PDF BDX91 BDX93 BDX95 t-23-/3 BDX92, BDX94 BDX96. BDX93 BDX95 BDX91 BDX96 BDX92 TO3 philips bdx96 philips

    TIP29

    Abstract: TIP29B TIP30
    Text: TIP29; 29A TIP29B; 29C I^ SILICON EPITAXIAL BASE POWER TRANSISTORS NPN silicon transistors in a plastic envelope intended for use in output stages of audio and television amplifier circuits where high peak powers can occur. PNP complements are TIP30 series.


    OCR Scan     		PDF TIP29; TIP29B; TIP30 TIP29 O-220. 7Z82166 ApriM981 bbS3T31 TIP29B

    BD934

    Abstract: B0937 B0941 BD937 B0939 BD941 BD934 philips BD933 IEC134 c 939
    Text: BD933; 935 BD937;- 939 BD941 PHILIPS INTERNATIONAL SbE D • 7 1 1 0 fiEb 0 0 4 3 D 44 41b IPHIN SILICON EPITAXIAL BASE POWER TRANSISTORS T-Z3~0*=i N-P-N silicon transistors in a plastic envelope intended for use in output stages of audio and television amplifier circuits where high peak powers can occur.


    OCR Scan     		PDF BD933; BD937 BD941 7110fl2b 0043D44 BD934; BD933 T-33-09 BD937; BD934 B0937 B0941 B0939 BD941 BD934 philips IEC134 c 939

    BDT29

    Abstract: BDT29B BDT30 IEC134 TIP29 BDT21
    Text: 11 N AMER PHILIPS/DISCRETE SSE D • ¡3^53^31 G G I U S B & M BDT29; 29A BDT29B; 29C T - 3 3 - 0 7 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in output stages o f audio and television am plifier circuits where high peak powers can occur. P-N-P complements are B D T 3 0 series.


    OCR Scan     		PDF BDT29; BDT29B; r-33-C BDT30 TIP29 BDT29 00nbS7 BDT29B T-33-09 IEC134 BDT21