Untitled
Abstract: No abstract text available
Text: • DEVELOPMENT DATA fc>bS3T31 001=1037 fi ■ 11 BUW133 SERIES This data sheet contains advance information and specifications are subject to change without notice. N AMER PHILIPS/DISCRETE 2SE D T -33-j3 NPN SILICON POWER TRANSISTORS High-voltage, glass-passivated power transistors in SOT93 envelope, intended for use in very fast
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bS3T31
BUW133
-33-j3
BUW133H
BUW133
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 5SE ri fc>bS3T31 DQlfl733 1 D BUS14 BUS14A T - 3 3 -/S T SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TQ-3 envelope, intended fo r use in converters, inverters, switching regulators, motor control systems etc.
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bS3T31
DQlfl733
BUS14
BUS14A
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Untitled
Abstract: No abstract text available
Text: b h S B T B l DOEOElaS 4 5SE D N AMER PHILIPS/DISCRETE PowerMOS transistor GENERAL DESCRIPTION QUICK REFERENCE DATA SYMBOL CO O > N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. The device is intended for use in Switched Mode Power Supplies
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BUK427-400A
BUK427-400B
BUK427
-400A
-400B
bS3T31
T-39-7)
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bs208
Abstract: No abstract text available
Text: Philips Components Datasheet status Product specification dateof issue February 1991 BS208 P-channel enhancem ent m ode vertical D -M O S transistor PIN CONFIGURATION FEATURES PIN • Direct interface to C -M O S • High-speed switching • No secondary breakdown.
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BS208
B8075
bb53T31
Q03bQ
bbS3T31
003b011
bs208
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE 5SE D bS3T31 0Q533bS 7 • BYP21 SERIES T- 03-/7 ULTRA FAST-RECOVERY RECTIFIER DIODES FEATURING LOW REVERSE LEAKAGE Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring low reverse leakage current, low forward voltage drop, ultra fast reverse recovery times, very low stored charge
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bbS3T31
0Q533bS
BYP21
BYP21-50
bS3T31
53T31
00SS37M
T-03-17
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E b b 5 3 T 3 i o p a a T m sqs BLV11 ]> V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is
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BLV11
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NT 407 F TRANSISTOR
Abstract: Philips CD 303 2222 595 npn 2222 transistor BFG198 MS8002 0450 7N 2222 443 TRANSISTOR D 471 MRA transistor
Text: Philips Sem iconductors • N bbS3R31 AMER 0024SSb 7bS H IA P X P H IL IP S /D IS C R E T E b7E Product specification D NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband simplifier applications.
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BFG198
OT223
MS8002
OT223.
NT 407 F TRANSISTOR
Philips CD 303
2222 595
npn 2222 transistor
BFG198
MS8002
0450 7N
2222 443
TRANSISTOR D 471
MRA transistor
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BYP21
Abstract: BYP21-50
Text: N AMER PHIL I P S / D I S C R E T E SSE D • bfc,S3T31 00223fc.S 7 ■ BYH21 SERIES A T -Q 3 -J 7 ULTRA FAST-RECOVERY RECTIFIER DIODES FEATURING LOW REVERSE LEAKAGE Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring low reverse
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byp21-50
BYP21
00SS37M
T-03-T7
M2488
M1459
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BFR29
Abstract: N-CHANNEL INSULATED GATE TYPE
Text: BFR29 N-CHANNEL INSULATED GATE MOS-FET Depletion type field-effect transistor in a TO-72 metal envelope with the substrate connected to the case. It is intended for linear applications in the audio as well as the i.f, and v.h.f. frequency region, and in cases where high input impedance, low gate leakage currents and low noise figures are of importance.
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BFR29
BFR29
N-CHANNEL INSULATED GATE TYPE
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BFR94
Abstract: Ferroxcube cross reference BFQ34 Ferroxcube core BFR94A f2nd transistor 3305
Text: N AMER PHILIPS/DISCRETE 2SE D BFQ34 is recommended for new design • bS3T31 DOlflOTS h U 11 BFR94 T -3 3 -0 S " N-P-N H.F. WIDEBAND TRANSISTOR N-P-N resistance-stabilized transistor in a SOT-48 capstan envelope featuring extremely low cross modulation, intermodulation and second harmonic distortion. Thanks to its high transition frequency
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bbS3T31
BFQ34
BFR94
T-33-Ã
OT-48
VCE-20V
BFR94
Ferroxcube cross reference
Ferroxcube core
BFR94A
f2nd
transistor 3305
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LBE2008T
Abstract: LCE2008T LGE2008T
Text: _ I_I_ N AMER PHILIPS/DISCRETE GbE D I • OOmTST 1 ■ LBE2008T LCE2008T MAINTENANCE TYPE for new design use LBE/LCE2009S T -3 3 .-0 S T MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.
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LBE/LCE2009S)
LBE2008T
LCE2008T
LCE2008T
LGE2008T
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BAS32L
Abstract: No abstract text available
Text: •I bb53T31 ODEMHÖM 250 « A P X N AUER PHILIPS/DISCRETE BAS32L b?E » HIGH-SPEED SILICON DIODE FOR SURFACE MOUNTING The BAS32L is a planar epitaxial high-speed diode designed fo r fast logic applications. This SM diode is a leadless diode in a hermetically sealed SOD-8 OC glass envelope w ith tin-plated
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bb53T31
BAS32L
BAS32L
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BUZ311
Abstract: P70D
Text: N AMER PHILIPS/DISCRETE DbE D m PowerMOS transistor □bS3T31 OGlMaBb E • BUZ311 T* ~ 3 I I^ May 1987 GENERAL DESCRIPTION N-channel enchancement mode fleld-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUZ311
T0218AA;
P70D
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m2131
Abstract: BYV31-500 BYV31-500U S 0319
Text: N AMER BSE P H IL IP S /D IS C R E T E D • ^5 3 1 3 3 1 0 0 2 5 5 4 5 JL 1 ■ BYV31 SERIES 7 - 0 3 - 1 y _ ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, h ig h -e fficie n cy e p ita xia l re c tifie r diodes in D O —4 m etal envelopes, fe a tu rin g lo w fo rw a rd
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00225MS
ABYV31
-roz-13
BYV31â
m2133
BYV31
T-03-19
m2132
m2131
BYV31-500
BYV31-500U
S 0319
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1540ct
Abstract: No abstract text available
Text: ea PBYR1535CT PBYR1540CT PBYR1545CT ” N AMER PHILIPS/DISCRETE 2SE D Q btiS3T31 0023=147 7 _ • SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES ~~ ~T-C>2-1~7 Low-leakage platinum-barrier double rectifier diodes in plastic envelopes, featuring low forward voltage drop, low capacitance, and absence o f stored charge. They are intended for use in
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PBYR1535CT
PBYR1540CT
PBYR1545CT
btiS3T31
conR1540CT
bS3T31
1540ct
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BLX93A
Abstract: BLX93 PCOT 01827 IEC134 transistor WC 2C TRANSISTOR G13 plw series capacitor TH90
Text: N AMER PHILIPS/DISCRETE _ 8 6 0 0 1 8 2 2 ObE D D ~T - • * 3 bS3T31 G014Gb0 Ü “j ^ BLX93A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and Is guaranteed to withstand severe
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BLX93A
BLX93A
BLX93
PCOT
01827
IEC134
transistor WC 2C
TRANSISTOR G13
plw series capacitor
TH90
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BD203
Abstract: bdx77
Text: BD201 BD203 BDX77 _ / v _ SILICON EPITAXIAL-BASE POWER TRANSISTORS NPN transistors in a plastic envelope. With their PNP complements BD202, BD204 and B D X78 they are primarily intended for use in hi-fi equipment delivering an output of 15 to 25 W into a 412 or
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BD201
BD203
BDX77
BD202,
BD204
O-220.
BD203
bdx77
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ObE D bbS*3B131 0 0 1 4 ^ 5 • LV1721E50R MICROWAVE LINEAR POWER TRANSISTOR N-P-N silicon power transistor for use in a common-emitter, class-A amplifier from 1,7 GHz to 2,1 GHz in c.w. conditions in military and professional applications.
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LV1721E50R
bbS3T31
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CNX82A
Abstract: philips cnx82a
Text: P h ilip s S em ico n d u cto rs Product specification CNX82A/CNX83A High-voltage optocouplers FEATURES • High current transfer ratio and low saturation voltage, making the devices suitable tor use with TTL integrated circuits • High degree of A C and DC
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CNX82A/CNX83A
CNX82A
CNX83Aare
OT231
CNX83A.
E90700
philips cnx82a
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Untitled
Abstract: No abstract text available
Text: N AMER P H I L I P S / D I S C R E T E 2SE D t.bS3T31 0 D 2 2 4 2 S T • A fcJYK 29 SLHItS T - O I- W ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times with very low stored charge and soft-recovery
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bS3T31
BYR29-500
T-03-17
M1246
bb53T31
b53T31
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BS208
Abstract: MB8075
Text: Philips Components Data sheet status Product specification date of issue February 1991 BS208 P-channel enhancement mode vertical D-MOS transistor PIN CONFIGURATION FEATURES • Direct interface to C-MOS • High-speed switching • No secondary breakdown.
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BS208
aTO-92
MB8075
iz7os34
003L011
BS208
MB8075
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RTC3001
Abstract: RTC3003 RTC3005 PKB32001U PKB32003U PKB32005U PTB32001X PTB32003X PTB32005X 32005U
Text: N AMER PHILIPS/DISCRETE QbE » • bbSBTBl 0015CH3 T ■ p k . B 3 2 u u iu PKB32003U PKB32005U MAINTENANCE TYPES for new design use PTB32001X, PTB32003X, PTB32005X M ICRO W AVE POWER TRANSISTO RS N-P-N silicon transistors for use in common-base class-B power amplifiers up to 3 GHz.
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PTB32001X,
PTB32003X,
PTB32005X)
01S0T3
PKB32003U
PKB32005U
PKB32001U
PKB32001U
32003U
32005U
RTC3001
RTC3003
RTC3005
PKB32005U
PTB32001X
PTB32003X
PTB32005X
32005U
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BYX98-300
Abstract: BYX98 BYX98-300R xfsm
Text: BYX98 SERIES N AMER PHILIPS/DISCRETE 2SE D bb53'i31 0 0 5 555^ T • T - o i - n RECTIFIER DIODES Silicon rectifier diodes in DO-4 metal envelopes, intended fo r use in power rectifier applications. The series consists o f the follow ing types: Normal po larity cathode to stud : BYX98-300 to 1200.
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BYX98
b53131
T-Ol-17
BYX98-300
BYX98-300R
1200R.
xfsm
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Untitled
Abstract: No abstract text available
Text: TIP31; A TIP31B; C _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ A SILICON EPITAXIAL BASE POWER TRANSISTORS N PN transistors in a plastic envelope intended for use in audio output stages and general amplifier and switching applications. PNP complements are T IP 3 2 series.
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TIP31;
TIP31B;
TIP31
0D34T07
bS3T31
0034T0fi
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