74ABT
Abstract: 74ABT244-1N ODS7457
Text: PHILIPS INTERNATIONAL b SE T> • 711062b □□57455 Philips S em iconductors Advanced BiCMOS Products 74ABT244-1 DESCRIPTION FEATURES • 3-State buffers • Live insertion/extraction permitted . Outputs include series resistance of 30fi, making external termination resistors
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711062b
74ABT244-1
5mA/-32mA
500mA
74ABT244-1
74ABT
500ns
74ABT244-1N
ODS7457
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80C51
Abstract: 80C562 83C562 8XC562 S80C562-4A68 S83C562-4A68 ebft
Text: • 711062b ÜDbbSTG MfiS ■ P H I N Philips Semiconductors Microcontroller Products Product specification Single-chip 8-bit microcontroller 80C562/83C562 Single-chip 8-bit microcontroller with 8-bit A/D, capture/compare timer, high-speed outputs, PWM DESCRIPTION
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711065b
80C562/83C562
8XC562)
80C51
83C562/83C562
80C51.
8XC562
83C562)
80C562
83C562
S80C562-4A68
S83C562-4A68
ebft
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Semiconductor Laser International
Abstract: CURF5
Text: PH ILIP S INTERNATIONAL MI E D B 711062b 002417^ t. E P H I N 'h ilip s C o m p o n e n ts Data sheet status Preliminary specification code 9397 251 40142 date of Issue March 1990 CQL90/D Visible light emitting collimator pen FEATURES • • • • Low power
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711062b
CQL90/D
Semiconductor Laser International
CURF5
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philips LTN111
Abstract: LTN111 LXL111-G Q0571
Text: PHILIPS INTERNATIONAL Philips Components Datasheet status Product specification date of issue July 1990 bOE D • 711062b □□571bE TÔT H P H I N LXL111-G t-Y /9 0 Electro-luminescent backlight panel QUICK REFERENCE DATA DEVICE DESCRIPTION 1 1 .5 x 6 2 mm
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711062b
Q0571bE
LXL111-G
LXL111-G
LTN111
philips LTN111
Q0571
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COMPIM
Abstract: Companding compressor audio pin configuration of i3 processor Philips Capacitor K1 audio compressor compressor IC noise cancellation IC SIgnetics RF Communications Products NE5752
Text: PHILIPS INTERNATIONAL bDE ]> • 711062b OQSafi'iS 033 H P H I N Philips Semiconductor* RF Communication« Product* Objective specification Audio processor - companding, VOX and amplifier section NE/SA5752 T The NE/SA5752 is a high performance low power audio signal processing system
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NE/SA5752
711Ga2b
COMPIM
Companding
compressor audio
pin configuration of i3 processor
Philips Capacitor K1
audio compressor
compressor IC
noise cancellation IC
SIgnetics RF Communications Products
NE5752
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BUK444-600B
Abstract: 100-P T-30 TT120
Text: PHILIPS INTERNATIONAL b5E ]> B 711062b DDb3T7b TbD « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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711062b
BUK444-600B
PINNING-SOT186
BUK444-600B
100-P
T-30
TT120
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interruptor
Abstract: MBB relay MBB692 Philips MBB BSS88
Text: 711062b 00ti7ô73 T3T Philips Sem iconducto PHIN Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES BSS88 Q UICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. SYMBOL PARAMETER MAX. UNIT 230 V mA V ds draln-source voltage
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711062b
00ti7Ã
BSS88
interruptor
MBB relay
MBB692
Philips MBB
BSS88
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BUK483-60A
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL bSE I> • 711062b Q D b m ? S 7bM « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.
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711002b
QDb417S
BUK483-60A
OT223
7110S2b
S0T223.
OT223.
35\im
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BUK456
Abstract: BUK456-60A BUK456-60B T0220AB BUK456-80A
Text: PHILIPS INTERNATIONAL bSE D B 711062b OObMlDb 2Ô7 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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711062b
D0b41Db
BUK456-60A/B
T0220AB
BUK456
7110fi2b
DDb411D
BUK456-80A/B
BUK456-60A
BUK456-60B
BUK456-80A
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HEF4794BT
Abstract: LED Sign Board Diagram D737S HEF4794B HEF4794BP JMT 92
Text: IN TEG R A TED C IR C U ITS Philips Semiconductors PHILIPS PHILIPS 711062b 007374^ 071 This Material Copyrighted By Its Respective Manufacturer Product specification Philips Sem iconductors 8-stage shift-and-store register LED driver HEF4794B transferred to the storage register when the strobe STR
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HEF4794B
711062b
HEF4794B
D0737b0
HEF4794BT
LED Sign Board Diagram
D737S
HEF4794BP
JMT 92
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RJH 60 f7
Abstract: PLS105A PLS105 PLS Philips 105 PLUS105-70A PLUS105-70N PLUS105-70N3 ck105
Text: P R O G R A M M A B LE LO G IC DEVIC E S PLUS105-70 Programmable logic sequencer 16x48x8 Product specification June 1 5 ,1 9 9 4 IC13 hilips Semiconductors I PHILIPS PHILIPS V\ • -M I 711062b 007^702 Ô44 Product specification Philips Semiconductors Programmable Logic Devices
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PLUS105-70
16x48x8)
711062b
PLUS105-70
853-0401F
7110fl2b
RJH 60 f7
PLS105A
PLS105
PLS Philips 105
PLUS105-70A
PLUS105-70N
PLUS105-70N3
ck105
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m1511
Abstract: D041S BYW93 BYW93-50 BYW93-50U D8755
Text: BYW93 SERIES M A INTENANCE TYPE PHILIPS INTERNATIONAL SbE ]> 711062b D041SÖÖ 47fl • P H I N r - 0 3 - 2 I ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-5 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery
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BYW93
711062b
D041SÃ
T-03-2
BYW93â
711002b
m1511
D041S
BYW93-50
BYW93-50U
D8755
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BUK444-500B
Abstract: transistor BUK444-500B
Text: hSE T> PHILIPS INTERNATIONAL m 711062b □0b3t171 MAT W P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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711062b
BUK444-500B
-SOT186
BUK444-500B
transistor BUK444-500B
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bsh 13 - n1
Abstract: BUK436-800A BUK436-800B
Text: PHILIPS INT ERNATIONAL bSE D B 711062b 0Db3T0b b47 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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711062b
BUK436-800A/B
BUK436
-800A
-800B
bsh 13 - n1
BUK436-800A
BUK436-800B
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2N3819
Abstract: transistor 2N3819 philips jfet 2N3819 data 2n3819 transistor "N-Channel JFET" JFET 2N3819 Philips International 00Sb3
Text: 41E D PHILIPS INTERNATIONAL 711062b 00Sb333 □ M P H I N T-3 ^ 2 5 - S h itin e fîn m n n n A n t« ! D ata sheet status Preliminary specification d ate of issue October 1990 FEATURES • Low cost • Specified at 100 MHz • Automatic insertion package.
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2N3819
7110S2b
00Sb333
T-3S-25'
MBB081
711Dfl2b
002b334
711002b
002b33b
2N3819
transistor 2N3819
philips jfet
2N3819 data
2n3819 transistor
"N-Channel JFET"
JFET 2N3819
Philips International
00Sb3
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triac bt 12
Abstract: bt136 TAG 69 triac BT136 AN triac bt 135 BT13 ON triac BT 06 700 TRIAC TAG 64 BT13 s41h
Text: PHILIPS INTERNATIONAL bSE 711062b QGbE236 W D «PHIN BT136 SERIES J V. TRIACS Glass-passivated 4 ampere triacs intended fo r use in applications requiring high bidirectional transient and blocking voltage capability and high thermal cycling performance w ith very low thermal
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711062b
QGbE236
BT136
524fl
BT136F
D8573
triac bt 12
TAG 69 triac
BT136 AN
triac bt 135
BT13 ON
triac BT 06 700
TRIAC TAG 64
BT13
s41h
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transistor bl 187
Abstract: yl1 TRANSISTOR f748 transistor ac 132 BF748
Text: Produc^jæcification Philips Semiconductors BF748 NPN 1 GHz wideband transistor PHILIPS INTERNATIONAL IPHIN 711062b 0044^71 S7T SbE PINNING FEATURES • Stable oscillator operation DESCRIPTION PIN Code: F748 • High current gain • Low feedback capacitance
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BF748
711062b
transistor bl 187
yl1 TRANSISTOR
f748
transistor ac 132
BF748
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BUK436-800A
Abstract: BUK436-800B
Text: PHILIPS INT ERNATIONAL bSE D B 711062b 0Db3T0b b47 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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711062b
BUK436-800A/B
BUK436
-800A
-800B
BUK436-800A
BUK436-800B
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BFQ32M
Abstract: transistor D 587 BFQ63 GHz PNP transistor
Text: Product specification Philips Sem iconductors PNP 4 GHz wideband transistor PHILIPS INTERNATIONAL ' / 5 bE D • 711062b BFQ32M □□•4 S 4 3 Q 3 3 T ■ P H IN PINNING DESCRIPTION PNP transistor In a TO-72 metal envelope with insulated electrodes and a shield lead connected to the
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BFQ32M
711062b
0DHS43Q
BFQ63.
IS22I
7110flEb
00M5M35
MBB347
BFQ32M
transistor D 587
BFQ63
GHz PNP transistor
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BUK455-400B
Abstract: No abstract text available
Text: bSE D PHILIPS INTERNATIONAL m 711062b D 0 b 4 C m Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use In Switched Mode Power Supplies
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711062b
BUK455-400B
-T0220AB
BUK455-400B
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BUK436-1000B
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL bSE ]> m 711062b ODba'Ill TD4 • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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711062b
BUK436-1000B
BUK436-1000B
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TRANSISTOR S 813
Abstract: BFQ265 BFQ265A NPN high frequency
Text: ^^»r«Juc^pM jficatjon Philips Semiconductors NPN high frequency high voltage transistor PHILIPS 5bE T> INTERNATIONAL FEATURES m 711062b BFQ265; BFQ265A □□4ShS3 7TT • P H I N PINNING • High breakdown voltages • Low output capacitance 1 emitter PIN
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OT128B
BFQ265;
BFQ265A
711062b
t-33-05
711062L
TRANSISTOR S 813
BFQ265
BFQ265A
NPN high frequency
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BFQ43S
Abstract: BFQ43 BLW31 plw7
Text: PHILIPS INTERNATIONAL b SE D • 711062b DDb2t.ll 3 74 « P H I N BFQ43 BFQ43S V.H.F. POWER TRANSISTORS N-P-N silicon planar epitaxial transistors intended fo r use in class-A, B o r C operated mobile transmitters w ith a nominal supply voltage o f 13,5 V. The transistors are resistance stabilized and guaranteed to w ith
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711062b
BFQ43
BFQ43S
BFQ43S
BLW31
BFQ43
plw7
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HKA802
Abstract: jumo pressure QQT117G SSOP16 UAA2072M UMA1017M UAA2072 MKA8 UMA1017
Text: INTEGRATED CIRCUITS » m s h e e t UMA1017M Low-voltage frequency synthesizer for radio telephones Product specification Supersedes data of N ovem ber 1994 1995 Jul 10 File under Integrated Circuits, IC 03 Philips Semiconductors 711062b 00^115^ 5 4 4 PHILIPS
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UMA1017M
711062b
7110fl2b
00T117E
HKA802
jumo pressure
QQT117G
SSOP16
UAA2072M
UMA1017M
UAA2072
MKA8
UMA1017
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