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    BD233 Search Results

    BD233 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    SiT3808AIBD2-33EX-20.000000 SiTime 1 to 80 MHz, ±10 to ±50 ppm VCXO Datasheet
    SF Impression Pixel

    BD233 Price and Stock

    Micro Commercial Components BD233-BP

    TRANS NPN 45V 2A TO126
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    onsemi BD233STU

    TRANS NPN 45V 2A TO126-3
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    DigiKey BD233STU Tube
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    Vishay Beyschlag MALSECA00BD233FARK

    CAP ALUM 33UF 20% 35V SMD
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    SiTime Corporation SIT3808AIBD2-33EX-20.000000

    MEMS OSC VCXO 20.0000MHZ LVCMOS
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    DigiKey SIT3808AIBD2-33EX-20.000000 1
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    SiTime Corporation SIT3808AIBD2-33EX-20.000000T

    HIGH PERFORMANCE PROGRAMMABLE MEMS VCXO, -40 TO 85C, 7050, 25PPM, 3.3V, 20MHZ, OE, 400 PPM PR, SMD - Tape and Reel (Alt: SIT3808AIBD2-33EX-)
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    Avnet Americas SIT3808AIBD2-33EX-20.000000T Reel 12 Weeks 3,000
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    Find more BD233 price and stock on Findchips.com

    BD233 Datasheets (47)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BD233 Central Semiconductor Leaded Power Transistor General Purpose Original PDF
    BD233 Continental Device India Plastic Power Transistors Original PDF
    BD233 Fairchild Semiconductor NPN Epitaxial Silicon Transistor Original PDF
    BD233 Micro Commercial Components TRANS GP BJT NPN 45V 2A 3TO-126 Original PDF
    BD233 Philips Semiconductors Silicon Epitaxial Base Power Transistors Original PDF
    BD233 Transys Electronics Plastic-Encapsulated Transistors Original PDF
    BD233 Weitron NPN Epitaxial Planar Transistors Original PDF
    BD233 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    BD233 Fairchild Semiconductor NPN EPITAXIAL SILICON TRANSISTOR Scan PDF
    BD233 Motorola Motorola Transistor Datasheets Scan PDF
    BD233 Motorola The European Selection Data Book 1976 Scan PDF
    BD233 Motorola European Master Selection Guide 1986 Scan PDF
    BD233 Motorola NPN silicon power transistor. 2 A, 45 V, 25 W. Scan PDF
    BD233 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BD233 Mullard Quick Reference Guide 1977/78 Scan PDF
    BD233 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BD233 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BD233 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BD233 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BD233 Unknown Shortform Electronic Component Datasheets Short Form PDF

    BD233 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IC 7400

    Abstract: BD233 BD237 BD235 7400 IC symbol bd233 equivalent bd237 equivalent
    Text: BD233/235/237 NPN Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR 3. BASE P b Lead Pb -Free 1 2 3 TO-126 ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Symbol BD233 BD235 BD237 Unit Collector-Emitter Voltage VCBO 45 60 100 V Collector-Base Voltage VCEO 45


    Original     		PDF BD233/235/237 O-126 BD233 BD235 BD237 IC 7400 BD233 BD237 BD235 7400 IC symbol bd233 equivalent bd237 equivalent

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • BD233 BD235 BD237 Power Dissipation: PCM =1.25W, Ta=25ć Collector Current : IC=2A


    Original     		PDF BD233 BD235 BD237 BD234/236/238

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • BD233 BD235 BD237 NPN Plastic-Encapsulate Transistors Power Dissipation: PCM =1.25W, Ta=25℃


    Original     		PDF BD233 BD235 BD237 BD234/236/238

    bd237

    Abstract: bd235 datasheet BD234
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • BD233 BD235 BD237 NPN Plastic-Encapsulate Transistors Power Dissipation: PCM =1.25W, Ta=25℃


    Original     		PDF BD233 BD235 BD237 BD234/236/238 bd237 bd235 datasheet BD234

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-126 Plastic-Encapsulate Transistors BD233/235/237 TRANSISTOR（ NPN ） TO—126 FEATURES 1. EMITTER Power dissipation PCM : 1.25 W（Tamb=25℃） Collector current ICM : 2 A Collector-base voltage V BR CBO : BD233 : 45


    Original     		PDF O-126 BD233/235/237 BD233 BD235: BD237: BD235 BD237

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD233/235/237 TRANSISTOR NPN TO-126 FEATURES 1. EMITTER Power dissipation 1.25 PCM: 2. COLLECTOR W (Tamb=25℃) Collector current ICM: 2 A Collector-base voltage V(BR)CBO:


    Original     		PDF O-126 BD233/235/237 O-126 BD233 BD235: BD237: BD237

    Untitled

    Abstract: No abstract text available
    Text: <£s.tni-C,ond\icko\ fine. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BD233/235/237 TRANSISTOR(NPN) n$*r rflMlpatlori \- TO-126 j ICH- 2 A 1. EMITTER i ] I i i El 1 2! 3 PCM: 1.25W(Tamb=25t)


    Original     		PDF BD233/235/237 O-126 BD233 BD235 BD237: -65tto 1501C BD23S

    bd238 equivalent

    Abstract: BD238 BD236 BD234
    Text: Inchange Semiconductor Product Specification BD234 BD236 BD238 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type BD233/235 /237 APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION


    Original     		PDF BD234 BD236 BD238 O-126 BD233/235 BD234 BD236 bd238 equivalent BD238

    bd233

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components BD233 BD235 BD237   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • • Halogen free available upon request by adding suffix "-HF"


    Original     		PDF BD233 BD235 BD237 BD234/236/238 bd233

    Circuit details of BD237 equivalent

    Abstract: bd237 equivalent NPN pnp MATCHED PAIRS to126 case BD234 BD233 BD235 BD236 BD237 BD238
    Text: IS/ISO 9002 Lic# QSC/L- 000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer EPITAXIAL SILICON POWER TRANSISTORS EC BD233 BD235 BD237 NPN BD234 BD236 BD238 PNP TO126 Plastic Package B Intended for use in Medium Power Linear Switching Applications


    Original     		PDF BD233 BD235 BD237 BD234 BD236 BD238 Circuit details of BD237 equivalent bd237 equivalent NPN pnp MATCHED PAIRS to126 case BD234 BD233 BD235 BD236 BD237 BD238

    BD237

    Abstract: BD235 bd237 equivalent BD233 BD234 bd237 datasheet bd235 datasheet SEM 238
    Text: Inchange Semiconductor Product Specification BD233 BD235 BD237 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type BD234 /236 /238 APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION


    Original     		PDF BD233 BD235 BD237 O-126 BD234 BD233 BD235 BD237 bd237 equivalent bd237 datasheet bd235 datasheet SEM 238

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components Features • • • • • • • • BD233 BD235 BD237   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Halogen free available upon request by adding suffix "-HF"


    Original     		PDF BD233 BD235 BD237 BD234/236/238

    BD233

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • BD233 BD235 BD237 NPN Plastic-Encapsulate Transistors Power Dissipation: PCM =1.25W, Ta=25℃ Collector Current : IC=2A


    Original     		PDF BD233 BD235 BD237 BD234/236/238

    bd238

    Abstract: BD236 BD234 bd238 equivalent
    Text: SavantIC Semiconductor Product Specification BD234 BD236 BD238 Silicon PNP Power Transistors DESCRIPTION •With TO-126 package ·Complement to type BD233/235 /237 APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter


    Original     		PDF BD234 BD236 BD238 O-126 BD233/235 BD234 BD236 bd238 bd238 equivalent

    bd237

    Abstract: BD233
    Text: BD233/235/237 BD233/235/237 Medium Power Linear and Switching Applications • Complement to BD 234/236/238 respectively TO-126 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Value Units


    Original     		PDF BD233/235/237 O-126 BD233 BD235 BD237 bd237 BD233

    BD235 PHILIPS

    Abstract: bd233 T BD233 bd237 philips BD234 BD237-10 BD235 BD236 BD237 BD238
    Text: BD233 BD235 BD237 PHILIPS INTERNATIONAL SbE T> • 711002b 004205*4 725 ■ P H I N T - 3 3 - O SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a S O T -3 2 p la stic envelope intended fo r use in te levision and au d io a m p lifie r c irc u its


    OCR Scan     		PDF BD233 BD235 BD237 711002b aSOT-32 BD234, BD236 BD238. BD233 BD235 BD235 PHILIPS bd233 T bd237 philips BD234 BD237-10 BD237 BD238

    BD235 PHILIPS

    Abstract: bd234c BD234 Philips
    Text: BD234; BD236; BD238 PHILIPS INTERNATIONAL 5bE D • 711002b 0D42öb2 ATI ■ P H I N SILICON EPITAXIAL-BASE P O W E R TRANSISTORS P-N-P tra n sis to rs in a SOT-32 plastic envelope intended for use in television and audio am plifier c irc u its where high peak pow ers can occur. N-P-N complements a re BD233,


    OCR Scan     		PDF BD234; BD236; BD238 711002b OT-32 BD233, BD235 BD237. BD234 BD235 PHILIPS bd234c BD234 Philips

    BD237

    Abstract: Audio amplifier circuits bd238 BD233 BD234 BD235 BD236
    Text: BD233 BD235 BD237 SILICON EPITAXIAL-BASE POWER TRANSISTORS N-P-N transistors in a SOT-32 plastic envelope intended fo r use in television and audio am plifier circuits where high peak powers can occur. P-N-P complements are BD234, BD236 and BD238. Matched pairs


    OCR Scan     		PDF BD233 BD235 BD237 OT-32 BD234, BD236 BD238. BD233 BD235 BD237 Audio amplifier circuits bd238 BD234

    BD233

    Abstract: BD237 BD235 bd233 T BD237-10 BD235 TRANSISTOR
    Text: BD233/235/237 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • C om plem ent to BD 234/236/238 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 45 V : BD235 60 V : BD237 100 V 45 V C ollector Base Voltage


    OCR Scan     		PDF BD233/235/237 BD233 BD235 BD237 BD237 BD235 bd233 T BD237-10 BD235 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: BD234/236/238 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO -126 • Complement to BD233/235/237 respectively ABSOLUTE MAXIMUM RATINGS Characteristic BD234 BD236 BD238 Collector Emitter Voltage BD234 BD236 BD238 Collector Emitter Voltage BD234


    OCR Scan     		PDF BD234/236/238 BD233/235/237 BD234 BD236 BD238

    3CKV

    Abstract: No abstract text available
    Text: BD233/235/237 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO -126 • Complement to BD234/236/238 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit VcBO 45 60 100 ‘ 45 60 80 45 60 100 5 2 6 25 150


    OCR Scan     		PDF BD233/235/237 BD234/236/238 BD233 BD235 BD237 3CKV

    BD237 toshiba

    Abstract: No abstract text available
    Text: TOSHIBA {DIS CR ETE/O PT O} Sb D E ^ T D ^ a S D 00DÖG74 BD233 BD235 IBD237I SILICON NPN EPITAXIA L BASE M ESA TYPE 9097250 TOSHIBA <DI S C R E T E /O P T O > 5òC 08074 □'' T - 3 3 ~ AUDIO POWER AMPLIFIER APPLICATIONS. Unit in tnm 7. 9 MAX. VERTICAL DEFLECTION OUTPUT.APPLICATION IN TV.


    OCR Scan     		PDF BD233 BD235 IBD237I BD234, BD236 BD238 BD237 BD237 toshiba

    Untitled

    Abstract: No abstract text available
    Text: 7 ^ 2 3 7 Q02Ô3TS ^ mT-3>3>'0°\ S G S -T H O M S O N M Ê B O iU lie ïlM iis S S G S- TH OM SON B D 2 3 3 /5 /7 B D 2 3 4 /6 /8 3GE » MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTION The BD233, BD235 and BD237 are silicon epitaxialbase NPN power transistors in Jedec TO-126


    OCR Scan     		PDF BD233, BD235 BD237 O-126 BD234, BD236 BD238 BD233 BD234

    bd234

    Abstract: No abstract text available
    Text: BD234; BD236; BD238 _ _ y v SILICON EPITAXIAL-BASE POWER TRANSISTORS P-N-P transistors in a SOT-32 plastic envelope intended for use in television and audio amplifier circuits where high peak powers can occur. N-P-N complements are BD233,


    OCR Scan     		PDF BD234; BD236; BD238 OT-32 BD233, BD235 BD237. BD234 BD236 bd234