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    Dremel BDT632

    BOSCH 6-32 TAP NO 36 DRILL COMBO
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    DigiKey BDT632 Bulk 2
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    Comset Semiconductor BDT63C

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    Bristol Electronics BDT63C 300
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    BDT63 Datasheets (61)

    Part ECAD Model Manufacturer Description Curated Type PDF
    BDT63 Philips Semiconductors Silicon Darlington Power Transistor Original PDF
    BDT63 Magnatec Silicon Darlington Power Transistor Scan PDF
    BDT63 Magnatec TRANSISTOR DARLINGTON Scan PDF
    BDT63 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BDT63 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BDT63 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDT63 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BDT63 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BDT63 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDT63 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BDT63 Philips Semiconductors SILICON DARLINGTON POWER TRANSISTORS Scan PDF
    BDT63A Philips Semiconductors Silicon Darlington Power Transistor Original PDF
    BDT63A Magnatec Silicon Darlington Power Transistor Scan PDF
    BDT63A Magnatec TRANSISTOR DARLINGTON Scan PDF
    BDT63A Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BDT63A Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BDT63A Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BDT63A Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BDT63A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BDT63A Unknown Shortform Transistor Datasheet Guide Short Form PDF

    BDT63 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GT811

    Abstract: BD663E BDT21 TIPL780 BUV30 10u600n 2SD617 2SD1590K ge d44e1 TIPL780A
    Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer Ic Max V BR CEO Max (A) (V) (W) PD fT hre Min Max (Hz) Max tr Max (A) (8) ICBO r (CE)ut T Op«r Max (Ohms) Max (°C) 666m 666m 666m 175 175 175 175 200 200 175 175 150 150 Package Style Darlington Transistors, NPN (Cont'd)


    Original     		PDF BDX63A MJ1001 RCA1001 2N6056 PMD12K80 MJ1201 MJD122 2SD1590M GT811 BD663E BDT21 TIPL780 BUV30 10u600n 2SD617 2SD1590K ge d44e1 TIPL780A

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original     		PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original     		PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


    Original     		PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original     		PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    "Tektronix 475"

    Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,


    Original     		PDF 48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent

    D42C5

    Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


    Original     		PDF MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220

    mje521 equivalent

    Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry


    Original     		PDF MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100

    2N3055

    Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes


    Original     		PDF MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64

    silicon power 2GB

    Abstract: DG432
    Text: BDT63F; BDT63AF ^DTBSBF; BDT63CF 1 PHILIPS INTERNATIONAL SbE D • 7 1 1 0 0 2 b Q 0 4 3 2 b b «îM *1 H P H I N T -3 3 -2 ^ SILICON DARLINGTON POWER TRANSISTORS NPN silicon darlington power transistors in a SOT186 envelope with an electrically insulated mounting


    OCR Scan     		PDF BDT63F; BDT63AF BDT63CF OT186 T62BF T62CF. BDT63F OT186. BDT63AF silicon power 2GB DG432

    transistor 1BT

    Abstract: BDT62C PHILIPS npn 1bt BDT63B
    Text: BDT63; 63A BDT63B; 63C _ PHILIPS "INTERNATIONAL" StEB A • v _ 7110flEb 0043551, TTT - PHIN T - J J - Z 7 SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general


    OCR Scan     		PDF BDT63; BDT63B; 7110flEb T0-220 BDT62, BDT62A; BDT62B BDT62C. BDT63 T-33-29 transistor 1BT BDT62C PHILIPS npn 1bt BDT63B

    BDT63

    Abstract: BDT62
    Text: BDT63; 63A BDT63B; 63C _A SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; TO-220 plastic envelope. P-N-P complements are BDT62,


    OCR Scan     		PDF BDT63; BDT63B; O-220 BDT62, BDT62A; BDT62B BDT62C. BDT63 bS3T31 BDT63 BDT62

    transistor AL P09

    Abstract: BDT63 bdt638 BDT53 PCTI TRANSISTOR LC80 P0910 bot62 BDT63B BDT62A
    Text: 2S-MAY-2000 15= 1? FROM mGNPTEC 01132794449 TO BDT63; 63A BDT63B; 63C SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial basetranjistor* in monolithic Darlington circuit for Audiooutput stagesandgeneral amplifier end»witchingapplications; T0-220 plasticenvelope. p-N-Pcomplements are BDT62,


    OCR Scan     		PDF 2S-MAY-2000 BDT63; BDT63B; T0-220 8DT62, BDT62A; BOT62B 8DT62C. BDT53 TZ621M transistor AL P09 BDT63 bdt638 PCTI TRANSISTOR LC80 P0910 bot62 BDT63B BDT62A

    bot63

    Abstract: BDT62 BDT62A BDT62B BDT62C BDT63 BDT63B
    Text: BDT63; 63A BDT63B; 63C y v _ SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications; T0-220 plastic envelope. P-N-P complements are BDT62,


    OCR Scan     		PDF BDT63; BDT63B; T0-220 BDT62, BDT62A; BDT62B BDT62C. BDT63 T0-220. bot63 BDT62 BDT62A BDT62C BDT63B

    BDT62B

    Abstract: SB 62A diode BDT62 BDT62 B BDT62A bdt63a BDT63 BDT63B BDT63C TRANSISTORE
    Text: J BDT62; -62A BDT62B; 62C ^ SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. T 0 -2 2 0 plastic envelope. N-P-N complements are BDT63,


    OCR Scan     		PDF BDT62; BDT62B; T0-220 BDT63, BDT63A, BDT63B BDT63C. BDT62 BDT62B SB 62A diode BDT62 B BDT62A bdt63a BDT63 BDT63C TRANSISTORE

    silicon power 2GB

    Abstract: 63BF CT54 BDT63CF D 711 N 60 T D04-3 bdt63b npn BDT63F 63CF BDT62AF
    Text: BDT63F; BDT63AF BDT63BF; BDT63CF j SbE T> PHILIPS INTERNATIONAL m 711002b 00432bb • PHIN SILICON DARLINGTON POWER TRANSISTORS NPN silicon darlington power transistors in a SO T186 envelope w ith an electrically insulated mounting base. The devices are designed fo r audio output stages and general am plifier and switching applications.


    OCR Scan     		PDF BDT63F; BDT63AF yBDT63BF; BDT63CF 0043Sbb OT186 BDT62F, BDT62AF, BDT62BF BDT62CF. silicon power 2GB 63BF CT54 BDT63CF D 711 N 60 T D04-3 bdt63b npn BDT63F 63CF BDT62AF

    BDT63

    Abstract: transistor 1BT BDT63B M32T BDT63C transistor 1BT 12 bdt63a Complementary Darlington Audio Power Amplifier BDT62 BDT62A
    Text: J PHILIPS INTERNATIONAL SbE D BDT63; 63A BDT63B; 63C 711Dfl2fc. 004355^ TT T • ■ PH IN T-JJ-Z7 SILICON DARLINGTON POWER TRANSISTORS N -P-N ep itaxial base transistors in m o n o lith ic D arling to n c irc u it fo r audio o u tp u t stages and general


    OCR Scan     		PDF BDT63; BDT63B; 711DflHh T0-220 BDT62, BDT62A; BDT62B BDT62C. BDT63 transistor 1BT BDT63B M32T BDT63C transistor 1BT 12 bdt63a Complementary Darlington Audio Power Amplifier BDT62 BDT62A

    bot62

    Abstract: BDT628 BDT62B BDT62A BDT63C BDT62 BDT63 BDT63B J120 SB 62A diode
    Text: — - jr — r 2 3 0 -SSI tz>5S5 ] ;r.-3 L ' BDT62; 62A BDT62B; 62C SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications. T0-220 plastic envelope. N-P-N complements are BDT63,


    OCR Scan     		PDF BDT62; BDT62B; O-220 BDT63, BDT63A, BDT63B BDT63C. BDT62 bot62 BDT628 BDT62B BDT62A BDT63C BDT63 J120 SB 62A diode

    BDT63BF

    Abstract: 63BF BDT*63CF BDT63CF BDT63F 63CF AI mm sot 553 BDT62AF BDT62BF BDT62CF
    Text: BDT63F; BDT63AF I ^BDT63BF; BPT63CF SILICON DARLINGTON POWER TRANSISTORS NPN silicon darlington power transistors in a S 0 T 1 8 6 envelope w ith an electrically insulated mounting base. Th e devices are designed fo r audio output stages and general am plifier and switching applications.


    OCR Scan     		PDF BDT63F; BDT63AF BDT63BF; BDT63CF S0T186 BDT62F, BDT62AF, BDT62BF BDT62CF. BDT63F BDT63BF 63BF BDT*63CF BDT63CF 63CF AI mm sot 553 BDT62AF BDT62CF

    BDT62B

    Abstract: No abstract text available
    Text: BDT62; 62A BDT62B; 62C _ J K . SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m onolithic Darlington circu it for audio output stages and general am plifier and switching applications. TO-220 plastic envelope. N-P-N complements are BDT63,


    OCR Scan     		PDF BDT62; BDT62B; O-220 BDT63, bbS3T31 BDT62B

    BDT63BF

    Abstract: BDT62AF 3SM diode 62AF BDT62BF BDT62CF BDT62F BDT63AF BDT63CF BDT63F
    Text: BDT62F; BDT62AF ^BDT62BF; BDT62CF PHILIPS I N T E R NA TI O NA L SbE D 711DöBb 0 0 4 3 2 4 fl SILICON DARLINGTON POWER TRANSISTORS 23 B T P lTlÑ ” T-33-3/ PNP silicon darlington power transistors in a SOT186 envelope w ith an electrically insulated mounting


    OCR Scan     		PDF BDT62F; BDT62AF BDT62BF; BDT62CF 711052k 354fi T-33-3/ OT186 BDT63F, BDT63AF, BDT63BF BDT62AF 3SM diode 62AF BDT62BF BDT62CF BDT62F BDT63AF BDT63CF BDT63F

    diode t62

    Abstract: No abstract text available
    Text: BDT62;-62A BDT62B; 62C J PHILIPS INTERNATIONAL SbE ]> • 7110fl2b 0043S3Ö TÔ4 M P H I N T - 3 3 - 3 / SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in m onolithic Darlington circuit for audio output stages and general am plifier and switching applications. T 0 -2 2 0 plastic envelope. N-P-N complements are B D T63,


    OCR Scan     		PDF BDT62 BDT62B; 7110fl2b 0043S3Ö BDT63C BDT62; 7110flat diode t62