8uk453
Abstract: BUK453-60A BUK453-60B T0220AB
Text: PHILIPS IN T E R NA TI ON AL bSE D B 711Dfl2b D D m O B L Philips Semiconductors PowerMOS transistor G EN ERA L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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7110fi2b
BUK453-60A/B
T0220AB
BUK453
8uk453
BUK453-60A
BUK453-60B
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MCL T1-1
Abstract: MAB8048 PCF84C12 PCF84C121 PCF84C121P PCF84C121T S020
Text: D EV ELO P M EN T DATA 34E m This data sheet contains advance information and specifications are subject to change without notice. _ 711Dfl2b 0011455 S I | PCF84C121 PHILIPS INT ER NATIONAL _ SINGLE-CHIP 8-BIT M ICROCONTROLLER WITH 8 B Y T E S EEPROM
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OCR Scan
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711002b
G0114SS
PCF84C121
PCF84C121.
PCF84C121
PCF84C12.
7110fl2b
MCL T1-1
MAB8048
PCF84C12
PCF84C121P
PCF84C121T
S020
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J108
Abstract: J109 J110 PZFJ108 PZFJ109 PZFJ110
Text: • 711Dfl2b OObflOMa 414 IPHIN Philips Semiconductors Data sheet status Product specification date of issue July 1993 FEATURES • High speed sw itching • Interchangeability o f drain and source connections • Low R d s o ii at zero gate voltage (< 8 £i for PZFJ 108)
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OCR Scan
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711Dfl2b
PZFJ108/PZFJ109/PZFJ110
PZFJ108)
-SOT223
OT223
MBB114
PZFJ109)
PZFJ110)
711082b
J108
J109
J110
PZFJ108
PZFJ109
PZFJ110
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PDF
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RZB12250Y
Abstract: No abstract text available
Text: / " 3 3 - ! j £ RZB12250Y M AIN TEN AN C E TYPE PHILIPS INTERNATIONAL SbE D • 711Dfl2b DDMbblb 7 n ■PHIN PULSED MICROWAVE POWER TRANSISTOR NPN silicon power transistor fo r use in a common-base, class-C narrowband am plifier in avionics applications.
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RZB12250Y
FO-57C.
RZB12250Y
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PDF
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BTW42-600R
Abstract: TSM 1250 1000R mml 600 600R BTW38 BTW42 BTW42-600RC
Text: PHILIPS bSE D INTERNA TI ON AL Jl B 711Dfl2b DDb5431 3TD • P H I N BTW42 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes w ith high d V p /d t capabilities. They are intended fo r use in power control circuits and switching systems where high transients can occur e.g. phase
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DDbS43i
BTW42
BTW42â
1000R.
1000r
BTW38
BTW42-600R
TSM 1250
1000R
mml 600
600R
BTW42-600RC
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PDF
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1df diode
Abstract: 74ABT 74ABT240-1D 74ABT240-1DB 74ABT240-1N
Text: PHILIPS INTERNATIONAL bSE D • 711Dfl2b 0057442 534 ■ PHIN Philips Sem iconductors Advanced BiCMOS Products P roduct specification Octal inverting buffer with 30£2 series termination resistors 3-State 74ABT240-1 QUICK REFERENCE DATA FEATURES • Octal bus interface
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OCR Scan
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711Dfl2b
74ABT240-1
12mA/-32mA
500mA
74ABT240-1
74ABT
500ns
1df diode
74ABT240-1D
74ABT240-1DB
74ABT240-1N
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PDF
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Untitled
Abstract: No abstract text available
Text: “~T:L3 3 r~ l 5 RX3034B70W D E V EL O P M EN T DATA T h is data sheet c o n ta in s .advance in fo rm a tio n and sp e cific a tio n s are su b ject to cha nge w it h o u t notice. PHILIPS i n t e r n a t i o n a l S b E ]> • 711Dfl2b O O t4fciS3ti b2fc, « P H I N
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RX3034B70W
711Dfl2b
711Dfl2b
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BUK102-50GL
Abstract: IEC134 T0220AB AAB3 buk102-500l
Text: PHILIPS I N T E R N A T I O NA L tSE D • 711Dfl2b D0b3fl25 blfi « P H I N Philips Semiconductors Product Specification PowerMOS transistor BUK102-50GL Logic level DESCRIPTION QUICK REFERENCE DATA Monolithic temperature and
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OCR Scan
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7110A2b
D0b3fl25
BUK102-50GL
ll3/lls25t
IEC134
T0220AB
AAB3
buk102-500l
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PDF
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Untitled
Abstract: No abstract text available
Text: PZ2327B15U PHILIPS INTERNATIONAL SbE D • 711Dfl2b DDMb4flfl 043 ■ P H I N 7 MICROWAVE POWER TRANSISTOR NPN silicon epitaxial microwave power transistor, intended fo r use in a common-base, class-C broad band power am plifier, operating in the 2.3 to 2.7 GHz frequency range.
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OCR Scan
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PZ2327B15U
711Dfl2b
T-33-09
7110flEb
711065b
Q04b4c
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BYX25
Abstract: BYX25-600 diode BYX25 600 BYX25-600R BYX25-1400
Text: BYX25 SERIES ~ SbE D PHILIPS INTERNATIONAL • 711Dfl2b □ DMlS'lb 544 « P H I N T-0 7 - H CONTROLLED AVALANCHE RECTIFIER DIODES Diffused silicon diodes in DO—4 metal envelopes, capable of absorbing transients and intended for power rectifier applications. The series consists of the following types:
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BYX25
711Dfl2b
BYX25--600
BYX25--1400.
BYX25--600R
BYX25--1400R.
10-32UNF
711DflSti
BYX25-600
diode BYX25 600
BYX25-600R
BYX25-1400
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on 5295 transistor
Abstract: fr91a BFR91A transistor bfr91a to92 fr91a TO-92 BFR91A 993 395 pnp npn transistor ai 757 TRANSISTOR fr91a NPN/TRANSISTOR 187
Text: Philips Sem iconductors JZ - 3 /- I Z Product specification - ^ NPN 6 GHz wideband transistor PHILIPS INTERNATIONAL BFR91A 711Dfl2b D L m 5 7 C H 5bE 57 B • P H IN PINNING FEATURES DESCRIPTION PIN • Low noise • Low intermodulation distortion • High power gain
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OCR Scan
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BFR91A
711Dfl2b
DD457CH
BFR91A/02
ON4185)
BFQ23-
on 5295 transistor
fr91a
BFR91A transistor
bfr91a to92
fr91a TO-92
BFR91A
993 395 pnp npn
transistor ai 757
TRANSISTOR fr91a
NPN/TRANSISTOR 187
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PH5415
Abstract: ph54 h541 PH5416
Text: PH5415 PH5416 PHILIPS INTERNATIONAL 5bE J> • 711Dfl2b D O M S S 4 4 033 M P H I N 3 7 -^ / 7 SILICON P-N-P HIGH-VOLTAGE TRANSISTORS P-N-P high-voltage smali-signal transistors, prim arily intended fo r use in telephony applications and encapsulated in a T O -92 envelope.
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OCR Scan
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PH5415
PH5416
711DflEb
D042544
PH5415
ph54
h541
PH5416
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PDF
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BFQ32
Abstract: BFQ32S BFG31 BFQ149 X3A-BFQ32
Text: Philips Semiconductors Product specification T-3|-c?o PNP 4 GHz wideband transistor crystal PHILIPS INTERNATIONAL 711Dfl2b OOMbCHB flfl? • PHIN 5bE t DESCRIPTION X3A-BFQ32 MECHANICAL DATA PNP crystal used in BFQ32S SOT37 , BFQ149 (SOT89) and BFG31 (SOT223). Crystals are supplied as whole
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OCR Scan
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BFQ32S
BFQ149
BFG31
OT223)
X3A-BFQ32
X3A-BFQ32
711Dfl2b
URV-3-5-52/733
BFQ32
BFQ32S
BFG31
BFQ149
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PDF
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PCF8567C
Abstract: sot158a PCF8567CP PCF8567CT CMOS applications handbook
Text: D E V ELO P M EN T DATA PCF8567C T h is data sheet c o n ta in s a dvance in fo rm a tio n and sp e cific atio n s are subject to cha nge w it h o u t notice. PH IL IP S I N T E R N A T I O N A L SDE D • 711Dfl2b D O B S lb E SS7 ■ PHIN FOR D E T A ILE D IN F O R M A T IO N SEE THE LATEST ISSUE OF H A N DBO O K IC12 0 R D A T A SH EET
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OCR Scan
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PCF8567C
711002b
PCF8567C
PCF8567CP:
40-lead
OT129)
PCF8567CT:
VS040;
sot158a
PCF8567CP
PCF8567CT
CMOS applications handbook
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PDF
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BD132
Abstract: BD131 NPN POWER TRANSISTOR SOT-32 M 5229 IC GDM2770 GQM2771 IEC134 transistor af 126 d5224 transistor Bd132
Text: BD132 P HILIPS I N T E R N A T I O N A L SbE D • 711Dfl2b G D I42770 T*i7 M P H I N r-33-^r SILICON PLANAR EPITAXIAL POW ER TRANSISTOR P-N-P transistor in a SOT-32 plastic envelope for general purpose, medium power applications. N-P-N complement is BD131.
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OCR Scan
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BD132
711002b
GDM2770
OT-32
BD131.
O-126
OT-32)
BD131
NPN POWER TRANSISTOR SOT-32
M 5229 IC
GQM2771
IEC134
transistor af 126
d5224
transistor Bd132
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Untitled
Abstract: No abstract text available
Text: JA100 JA101 PHILIPS INTERNATIONAL SbE D • 711Dfl2b 0 0 4 2 4 4 b T25 ■ P H I N T -T f- 2 / PNP SMALL-SIGNAL TRANSISTORS PNP small-signal transistors in TO-92 envelopes, recommended for general purpose amplifier applications. The complementary types are the JC500 and JC501 respectively.
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OCR Scan
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JA100
JA101
711Dfl2b
JC500
JC501
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PDF
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sap16
Abstract: CSB503F5 A2x smd sap15 SAP6 SAP12 SMU FM IC TDA9850T CSB503F58 SDIP32
Text: INTEGRATED CIRCUITS h m m m TDA9850 l2C-bus controlled BTSC stereo/SAP decoder Preliminary specification File under Integrated Circuits, IC02 Philips Sem iconductors 711Dfl2b o t n o b c n 1995 Jun 19 PHILIPS b3b Philips Semiconductors Preliminary specification
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OCR Scan
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TDA9850
711Dfl2b
7110AE
sap16
CSB503F5
A2x smd
sap15
SAP6
SAP12
SMU FM IC
TDA9850T
CSB503F58
SDIP32
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PDF
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12 pin 4digit 7 segment display
Abstract: ltd226-r12 LTD226F-12 7 segment display 12 pin LTD226R-12 LTD226R-22
Text: PH ILI PS INTERNATIONAL Philips Components bDE D • 711Dfl2b GQ57GS1 113 IPHIN LTD226 Data sheet status P rod uct specification date of issue July 1990 Liquid crystal display QUICK REFERENCE DATA DEVICE DESCRIPTION The LTD226 is a 4-digit, 7-segment, multi-function LCD.
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OCR Scan
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711Dfl2b
GQ57GS1
LTD226
LTD226
LTD226R-11
LTD226R-12
LTD226F-12
LTD226R-21
IEC134)
12 pin 4digit 7 segment display
ltd226-r12
7 segment display 12 pin
LTD226R-22
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PDF
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BFW17A
Abstract: bfw17a philips semiconductor lem HA
Text: NPN 1 GHz wideband transistor 5bE T> m PHI! IPS INTERNATIONAL DESCRIPTION ^ '" ^ 3 3 BFW17A 711Dfl2b GOMbOEB Mfc.3 « P H I N PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case. The transistor has extremely good
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OCR Scan
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BFW17A
711Dfl2b
D04fc
0D4b025
BFW17A
bfw17a philips semiconductor
lem HA
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PDF
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2n4427
Abstract: 2N3866 Transistor 2N3866 2N3866 metal 2N3866 RF CLASS A Philips 4312 020 RF 2N3866 2N3866 class-a 2n3866 philips 4312 020 36640
Text: b5E D 711Dfl2b 00L3b7fl CHG • PHIN 2N3866 2N4427 PHILIPS INTERNATIONAL SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS N-P-N overlay transistors in TO-39 metal envelopes with the collector connected to the case. The devices are primarily intended for class-A, B or C amplifiers, frequency multiplier and oscillator circuits.
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OCR Scan
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711Dfl2b
00L3b7fl
2N3866
2N4427
2N3866
711002b
00b3bÃ
2n4427
Transistor 2N3866
2N3866 metal
2N3866 RF CLASS A
Philips 4312 020
RF 2N3866
2N3866 class-a
2n3866 philips
4312 020 36640
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PDF
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BFY90 PHILIPS
Abstract: BFW92 sot23 IEC-134 BFS17 BFW92 BFY90 IEC134 X3A-BFW92 philips bfw92
Text: P rodu ct specification P h ilip s S em icon du ctors NPN 1 GHz wideband transistor crystal PH IL IP S I N T E R N A T I O N A L SbE X3A-BFW92 711Dfl2b O D M b l l O 7Tb IPHIN M EC H A N IC A L DATA DESCRIPTION Crystal NPN crystal used in BFW 92 SOT37 , BFY90 (TO-72)
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OCR Scan
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BFW92
BFY90
BFS17
X3A-BFW92
X3A-BFW92
711Dfl2b
RV-3-5-52/733
IEC134)
BFY90 PHILIPS
BFW92 sot23
IEC-134
BFS17
BFW92
BFY90
IEC134
philips bfw92
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PDF
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BYW92
Abstract: BYW92-50 BYW92-50U ultra fast recovery diodes
Text: BYW92 SERIES M AINTENANCE TYPE PHILIPS INTERNATIONAL 5b E D • 711Dfl2b 0041560 Ifl? ■ PHIN T -< 9 3 '/? ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, h ig h -e fficie n cy e p ita x ia l re c tifie r dio d es in D O -5 m etal envelopes, fea tu rin g lo w
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OCR Scan
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BYW92
711GflSb
BYW92â
M1525
10-dlp/dt
T-OJ-19
711002b
M1579
BYW92-50
BYW92-50U
ultra fast recovery diodes
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PDF
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2N4401
Abstract: transistor 2n4401 philips 2N4400 philips 2N4400 2N4401 2N4400 N4400
Text: 2N4400 2N4401 PHILIPS INTERNATIONAL SbE ]> m 711Dfl2b 0QM2bbb bflS « P H I N SILICO N PLANAR EPITAXIAL T R A N S IS T O R S T - 27" N-P-N silicon planar epitaxial transistors in plastic TO -92 envelope for use in general purpose applications. Q U IC K R E F E R E N C E D A T A
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OCR Scan
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2N4400
2N4401
711Dfl2b
0042bbb
711002b
0Q42bbÃ
2N4401
transistor 2n4401 philips
2N4400 philips
2N4400 2N4401
N4400
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PDF
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ofwg
Abstract: ofwg3203 77ti OFWG*3203 ofwl9350 IEC134 TDA3856 TDA3856T TDA3857 TDA3858
Text: INTEGRATED CIRCUITS h S IK H E T TDA3856 Quasi-split sound processor for all standards Product specification Supersedes data of October 1990 File under Integrated Circuits, IC02 June 1994 Philips Semiconductors PHILIPS 711Dfl2b 0077^00 SHT • Philips Semiconductors
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OCR Scan
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TDA3856
711Dfl2b
TDA3858
TDA3857
7110A2L.
7A004
ofwg
ofwg3203
77ti
OFWG*3203
ofwl9350
IEC134
TDA3856
TDA3856T
TDA3857
TDA3858
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PDF
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