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    52N30P Search Results

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    52N30P Price and Stock

    IXYS Corporation IXFC52N30P

    MOSFET N-CH 300V 24A ISOPLUS220
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    DigiKey IXFC52N30P Box
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    Littelfuse Inc IXFH52N30P

    MOSFET N-CH 300V 52A TO247AD
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    DigiKey IXFH52N30P Tube 1
    • 1 $7.52
    • 10 $7.52
    • 100 $6.00033
    • 1000 $4.7371
    • 10000 $3.99496
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    IXYS Corporation IXFV52N30P

    MOSFET N-CH 300V 52A PLUS220
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    Littelfuse Inc IXTT52N30P

    MOSFET N-CH 300V 52A TO268
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    DigiKey IXTT52N30P Tube 300
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    Littelfuse Inc IXTQ52N30P

    MOSFET N-CH 300V 52A TO3P
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    DigiKey IXTQ52N30P Tube 30
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    • 100 $4.806
    • 1000 $4.24064
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    CoreStaff Co Ltd IXTQ52N30P 300
    • 1 $10.123
    • 10 $4.313
    • 100 $3.775
    • 1000 $3.775
    • 10000 $3.775
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    Find more 52N30P price and stock on Findchips.com

    52N30P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    52N30P

    Abstract: PLUS220SMD th2005
    Text: PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated IXFH 52N30P VDSS IXFV 52N30P ID25 IXFV 52N30PS RDS on trr TO-247 (IXFH) Symbol Test Conditions VDSS TJ = 25° C to 150° C 300 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 52N30P 52N30PS O-247 52N30P 52N30PS PLUS220SMD th2005

    mosfet 52n30p equivalents

    Abstract: 52N30P PLUS220SMD
    Text: Advanced Technical Information PolarHTTM HiPerFET Power MOSFET IXFH 52N30P IXFV 52N30P IXFV 52N30PS Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 300 V VGS Continuous ±20 V VGSM Transinet ±30


    Original     		PDF 52N30P 52N30PS 52N30P mosfet 52n30p equivalents PLUS220SMD

    52n30p

    Abstract: IXTT52N30P IXTQ52N30P 1M300 52N30
    Text: Advanced Technical Information 52N30P 52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A Ω = 66 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300


    Original     		PDF IXTQ52N30P IXTT52N30P 52N30P 52n30p IXTT52N30P IXTQ52N30P 1M300 52N30

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    52N30P

    Abstract: No abstract text available
    Text: Advanced Technical Information 52N30P 52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A Ω = 66 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM


    Original     		PDF IXTQ52N30P IXTT52N30P O-268 52N30P 52N30P

    1M300

    Abstract: 52N30 52N30P IXFC52N30P
    Text: Advance Technical Information 52N30P PolarHTTM HiPerFET Power MOSFET VDSS ID25 RDS on = 300 V = 32 A Ω = 75 mΩ N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGSS VGSM


    Original     		PDF IXFC52N30P ISOPLUS220TM E153432 52N30P 100ms 1M300 52N30 52N30P IXFC52N30P

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM HiPerFET Power MOSFET ISOPLUS220TM VDSS ID25 52N30P RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 300 24 75 200 V A Ω mΩ ns N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated Symbol Test Conditions Maximum Ratings


    Original     		PDF ISOPLUS220TM IXFC52N30P 52N30P 03-14-06-C

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    Untitled

    Abstract: No abstract text available
    Text: 52N30P 52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A ≤ 66 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V


    Original     		PDF IXTQ52N30P IXTT52N30P O-268 52N30P

    52n30p

    Abstract: mosfet 52n30p equivalents mosfet IXTQ52N30P IXTQ52N30P IXTT52N30P
    Text: 52N30P 52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A ≤ 66 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V V VGSS Continuous


    Original     		PDF IXTQ52N30P IXTT52N30P O-268 52N30P 52n30p mosfet 52n30p equivalents mosfet IXTQ52N30P IXTQ52N30P IXTT52N30P

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p

    DIODE 1334

    Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
    Text: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205


    Original     		PDF 110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S 200N10P-88 62N15P-5S 96N15P-6S 120N15P-7S 150N15P-8S DIODE 1334 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information 52N30P 52N30P PolarTM HiPerFET Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast recovery intrinsic diode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings


    Original     		PDF IXFH52N30P IXFT52N30P O-268 O-247AD 52N30P 52N30P