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    IXTT52N30P Search Results

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    IXTT52N30P Price and Stock

    Littelfuse Inc IXTT52N30P

    MOSFET N-CH 300V 52A TO268
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    DigiKey IXTT52N30P Tube 300
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    IXYS Corporation IXTT52N30P

    MOSFET 52 Amps 300V 0.066 Rds
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    Mouser Electronics IXTT52N30P
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    TTI IXTT52N30P Tube 300
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    TME IXTT52N30P 1
    • 1 $7.35
    • 10 $5.84
    • 100 $5.25
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    IXTT52N30P Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXTT52N30P IXYS Discrete MOSFETs: Standard N-channel Types Original PDF

    IXTT52N30P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    52n30p

    Abstract: IXTT52N30P IXTQ52N30P 1M300 52N30
    Text: Advanced Technical Information IXTQ52N30P IXTT52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A Ω = 66 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300


    Original     		PDF IXTQ52N30P IXTT52N30P 52N30P 52n30p IXTT52N30P IXTQ52N30P 1M300 52N30

    52N30P

    Abstract: No abstract text available
    Text: Advanced Technical Information IXTQ52N30P IXTT52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A Ω = 66 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM


    Original     		PDF IXTQ52N30P IXTT52N30P O-268 52N30P 52N30P

    ixtq52n30p

    Abstract: IXTT52N30P
    Text: PolarTM Power MOSFETs IXTT52N30P IXTQ52N30P VDSS ID25 RDS on = 300V = 52A   73m N-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) G S D (Tab) Symbol Test Conditions VDSS TJ = 25C to 150C Maximum Ratings 300 V VDGR TJ = 25C to 150C, RGS = 1M


    Original     		PDF IXTT52N30P IXTQ52N30P O-268 52N30P ixtq52n30p IXTT52N30P

    Untitled

    Abstract: No abstract text available
    Text: IXTQ52N30P IXTT52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A ≤ 66 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V


    Original     		PDF IXTQ52N30P IXTT52N30P O-268 52N30P

    52n30p

    Abstract: mosfet 52n30p equivalents mosfet IXTQ52N30P IXTQ52N30P IXTT52N30P
    Text: IXTQ52N30P IXTT52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A ≤ 66 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V V VGSS Continuous


    Original     		PDF IXTQ52N30P IXTT52N30P O-268 52N30P 52n30p mosfet 52n30p equivalents mosfet IXTQ52N30P IXTQ52N30P IXTT52N30P