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Littelfuse Inc IXFH52N30P MOSFET N-CH 300V 52A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFH52N30P	Tube	550		1	1 $7.61 10 $7.61 100 $4.70767 1000 $3.90851 10000 $3.90851	Buy Now
RS	IXFH52N30P	Bulk		8 Weeks	30	1 - 10 - 100 $6.05 1000 $6.05 10000 $6.05	Get Quote
IXYS Corporation IXFV52N30P MOSFET N-CH 300V 52A PLUS220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFV52N30P	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Littelfuse Inc IXTT52N30P MOSFET N-CH 300V 52A TO268
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTT52N30P	Tube			300	1 - 10 - 100 - 1000 $4.62673 10000 $4.62673	Buy Now
Newark	IXTT52N30P	Bulk			300	1 - 10 - 100 - 1000 $4.85 10000 $4.85	Buy Now
Littelfuse Inc IXTQ52N30P MOSFET N-CH 300V 52A TO3P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTQ52N30P	Tube			300	1 - 10 - 100 - 1000 $3.49887 10000 $3.49887	Buy Now
CoreStaff Co Ltd	IXTQ52N30P		300			1 $10.123 10 $4.313 100 $3.775 1000 $3.775 10000 $3.775	Buy Now
IXYS Corporation IXFC52N30P MOSFET N-CH 300V 24A ISOPLUS220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFC52N30P	Box			50	1 - 10 - 100 $3.7828 1000 $3.7828 10000 $3.7828	Buy Now

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52N30P Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
52N30P Abstract: PLUS220SMD th2005 Text: PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated IXFH 52N30P VDSS IXFV 52N30P ID25 IXFV 52N30PS RDS on trr TO-247 (IXFH) Symbol Test Conditions VDSS TJ = 25° C to 150° C 300 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	PDF	52N30P 52N30PS O-247 52N30P 52N30PS PLUS220SMD th2005
mosfet 52n30p equivalents Abstract: 52N30P PLUS220SMD Text: Advanced Technical Information PolarHTTM HiPerFET Power MOSFET IXFH 52N30P IXFV 52N30P IXFV 52N30PS Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 300 V VGS Continuous ±20 V VGSM Transinet ±30	Original	PDF	52N30P 52N30PS 52N30P mosfet 52n30p equivalents PLUS220SMD
52n30p Abstract: IXTT52N30P IXTQ52N30P 1M300 52N30 Text: Advanced Technical Information 52N30P 52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A Ω = 66 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300	Original	PDF	IXTQ52N30P IXTT52N30P 52N30P 52n30p IXTT52N30P IXTQ52N30P 1M300 52N30
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original	PDF
52N30P Abstract: No abstract text available Text: Advanced Technical Information 52N30P 52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A Ω = 66 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM	Original	PDF	IXTQ52N30P IXTT52N30P O-268 52N30P 52N30P
1M300 Abstract: 52N30 52N30P IXFC52N30P Text: Advance Technical Information 52N30P PolarHTTM HiPerFET Power MOSFET VDSS ID25 RDS on = 300 V = 32 A Ω = 75 mΩ N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGSS VGSM	Original	PDF	IXFC52N30P ISOPLUS220TM E153432 52N30P 100ms 1M300 52N30 52N30P IXFC52N30P
Untitled Abstract: No abstract text available Text: PolarHTTM HiPerFET Power MOSFET ISOPLUS220TM VDSS ID25 52N30P RDS on trr (Electrically Isolated Back Surface) = = ≤ ≤ 300 24 75 200 V A Ω mΩ ns N-Channel Enhancement Mode Fast Recovery Diode, Avalanche Rated Symbol Test Conditions Maximum Ratings	Original	PDF	ISOPLUS220TM IXFC52N30P 52N30P 03-14-06-C
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Untitled Abstract: No abstract text available Text: 52N30P 52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A ≤ 66 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V	Original	PDF	IXTQ52N30P IXTT52N30P O-268 52N30P
52n30p Abstract: mosfet 52n30p equivalents mosfet IXTQ52N30P IXTQ52N30P IXTT52N30P Text: 52N30P 52N30P PolarHTTM Power MOSFET VDSS ID25 = 300 V = 52 A ≤ 66 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V V VGSS Continuous	Original	PDF	IXTQ52N30P IXTT52N30P O-268 52N30P 52n30p mosfet 52n30p equivalents mosfet IXTQ52N30P IXTQ52N30P IXTT52N30P
STW20N60 Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal	Original	PDF	O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
DIODE 1334 Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88 Text: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205	Original	PDF	110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S 200N10P-88 62N15P-5S 96N15P-6S 120N15P-7S 150N15P-8S DIODE 1334 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP
Untitled Abstract: No abstract text available Text: Advanced Technical Information 52N30P 52N30P PolarTM HiPerFET Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast recovery intrinsic diode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings	Original	PDF	IXFH52N30P IXFT52N30P O-268 O-247AD 52N30P 52N30P