Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    50N50B Search Results

    50N50B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    50N60

    Abstract: 50n50 ixgk50n60bu1 G 50N60 50n5 IXGH50N60B
    Text: HiPerFASTTM IGBT with Diode V CES IXGK 50N50BU1 IXGK 50N60BU1 I C25 500 V 75 A 600 V 75 A V CE sat t fi 2.3 V 2.5 V 100ns 120ns Combi Pack Preliminary data Symbol Test Conditions Maximum Ratings 50N50 50N60 VCES VCGR T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MW


    Original
    PDF 100ns 120ns 50N50BU1 50N60BU1 50N50 50N60 O-264 IXGK50N50BU1 IXGK50N60BU1 ixgk50n60bu1 G 50N60 50n5 IXGH50N60B

    50N60

    Abstract: G 50N60 50n50 50n50bu1 IXGH50N60B 50n60 transistor IXGK50N50BU1 IXGK50N60BU1 50N50B
    Text: HiPerFASTTM IGBT with Diode V CES IXGK 50N50BU1 IXGK 50N60BU1 I C25 500 V 75 A 600 V 75 A V CE sat t fi 2.3 V 2.5 V 100ns 120ns Combi Pack Preliminary data Symbol Test Conditions Maximum Ratings 50N50 50N60 VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW


    Original
    PDF 50N50BU1 50N60BU1 100ns 120ns 50N50 50N60 O-264 IXGK50N50BU1 IXGK50N60BU1 50N60 G 50N60 50n50 50n50bu1 IXGH50N60B 50n60 transistor IXGK50N50BU1 IXGK50N60BU1 50N50B

    50n50c

    Abstract: 50N60 IXGH20N60AU1 10N60A IXGH20N60U1 G 50N60 G20N60 sot-227 footprint A48A 24N60
    Text: Preliminary data HiPerFASTTM IGBT VCES IXGH 50N50B IXGH 50N60B IC25 VCE sat 500 V 75 A 600 V 75 A tfi 2.3 V 100 ns 2.5 V 120 ns TO-247 AD C (TAB) Symbol Test Conditions Maximum Ratings 50N50 50N60 VCES TJ = 25°C to 150°C 500 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original
    PDF 50N50B 50N60B O-247 50N50 50N60 IXGH24N50BU1 IXGH24N60BU1 50n50c 50N60 IXGH20N60AU1 10N60A IXGH20N60U1 G 50N60 G20N60 sot-227 footprint A48A 24N60

    200n60

    Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
    Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40


    Original
    PDF PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original
    PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    12n60c

    Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
    Text: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM


    Original
    PDF O-220 O-263 O-247 PLUS247 O-268 ISOPLUS247TM O-264 20N30 28N30 30N30 12n60c 60n60 igbt diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60

    50N60

    Abstract: G 50N60 IXGH50N50B
    Text: HiPerFAST IGBT IXGH 50N50B IXGH 50N60B VcES ^C25 VCE sai tfi 500 V 75 A 2.3 V 80 ns 600 V 75 A 2.5 V 150 ns Preliminary data <) Symbol Test Conditions Maximum Ratings 50N50 50N60 V CES Tj = 25°C to 150°C 500 600 V VcOR Tj = 25°C to 150°C; RGE = 1 M n


    OCR Scan
    PDF 50N50B 50N60B 50N50 50N60 O-247 G 50N60 IXGH50N50B

    50N60

    Abstract: G 50N60 50n60b IXGH50N50B IXGH50N60B
    Text: DIXYS HiPerFAST IGBT V CES IXGH 50N50B IXGH 50N60B 500 V 600 V ^C25 75 A 75 A V CE sat t,i 2.3 V 80 ns 2.5 V 150 ns Preliminary data Symbol Test Conditions Maximum Ratings 50N50 50N60 V CES Tj = 25°C to 150°C 500 600 V V CGR ^ = 25°C to 150°C; RGE = 1 Mi2


    OCR Scan
    PDF 50N50B 50N60B 50N50 50N60 O-247 50N50 G 50N60 50n60b IXGH50N50B IXGH50N60B

    50n60

    Abstract: 50N50B IXGH50N50B IXGH50N60B
    Text: a ix Y S HiPerFAST IGBT v IXGH/IXGT 50N50B IXGH/IXGT 50N60B CES ; t C 25 500 V : 75 A 600 V : 75 A V C E sa t i t ii 2.3 V 80 ns 2.5 V 150 ns Preliminary data Symbol < > Maximum Ratings Test C onditions TO-247 AD (IXGH) 50N50 ¡ 50N60 VCES T, = 25QC to150cC


    OCR Scan
    PDF 50N50B 50N60B 50N50 50N60 O-247 to150cC O-268 50n60 IXGH50N50B IXGH50N60B

    50n60

    Abstract: G 50N60 50N50B wj 508 50n50 IXGH50N50B IXGH50N60B
    Text: □ IXYS Preliminary data V CES HiPerFAST IGBT Symbol IXGH 50N50B IXGH 50N60B 50N50 50N60 500 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 500 600 V V GES Continuous ±20 V V GEM Transient ±30 V 'c 2 5 Tc = 25°C 75 A 'c 9 0 Tc = 90°C 50 A ' cm Tc = 25°C, 1 ms


    OCR Scan
    PDF 50N50B 50N60B 50N50 50N60 O-247 50n60 G 50N60 wj 508 50n50 IXGH50N50B IXGH50N60B

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS HiPerFAST IGBT with Diode V CES IXGK 50N50BU1 IXGK 50N60BU1 ^C25 500 V 75 A 600 V 75 A V CE sat tfi 2.3 V 2.5 V 100ns 120ns Combi Pack Preliminary data Symbol Maximum Ratings Test Conditions 50N50 V V CGR Td = 25°C to 150°C Td = 25°C to 150°C; RGE = 1 M£i


    OCR Scan
    PDF 50N50BU1 50N60BU1 100ns 120ns 50N50 50N60 IXGK50N50BU1 IXGK50N60BU1

    50n60

    Abstract: 1xgh50n60b smd 601 servo drive 50n50 G 50N60 50n60b THT bsc 25 150N50 50N50B 321AL
    Text: IXGH 50N60B IXGH 50N50B n ix Y S PRELIM INARY DATA 50N60B IXGH 50N60B IXGH 50N50B H iPer FAST IGBT VCES 600V 500V ^C25 ^CE(sat) tn 75 A 2.5V 150ns 75A 2.3V 80ns T O -247 £ Symbol Test Conditions Maximum Ratings 50N50 C (tab) 50N60 V CES Tj = 2 5 °C to 150°C


    OCR Scan
    PDF 50N60B 50N50B 50N60B) 150ns 50N50 50N60 O-247 50n60 1xgh50n60b smd 601 servo drive 50n50 G 50N60 THT bsc 25 150N50 321AL

    G 50N60

    Abstract: 50N60 igbt 100a 50n50 IXGH50N60B
    Text: HiPerFAST IGBT with Diode V V CES IXGK 50N50BU1 IXGK 50N60BU1 ^C 2 5 500 V 75 A 600 V 75 A ^ C E s a t 2.3 V 2.5 V 100ns 120ns Combi Pack Preliminary data Symbol Test Conditions Maximum Ratings 50N50 vCES V C GR VGES VGEM 'c o ' cm 50N60 Tj = 25°C to 150°C


    OCR Scan
    PDF 50N50BU1 50N60BU1 100ns 120ns 50N50 50N60 O-264 G 50N60 igbt 100a IXGH50N60B

    7N60B

    Abstract: 65A3 40N60A 60N60 IXGA 12N60C 200n60 ixgh 1500 30N30 IXG IGBT ixgh
    Text: Insulated Gate Bipolar Transistors IGBT G series (high gain, high speed) v CE{Mt) Type T „ = 25°C A = 150°C New t jm > > IXGH 28N30 > 56 60 60_ IXGH 30N30 > IXGH 4QN30 > IXGH 31N60 IXGH IXGH IXGH > IXGN IXGN > IX G A 12N100 IXGH 12N100 IXGP 12N100 28


    OCR Scan
    PDF 30N30 28N30 4QN30 31N60 38N60 41N60 60N60 200N60 25N100A 7N60B 65A3 40N60A IXGA 12N60C 200n60 ixgh 1500 IXG IGBT ixgh

    ixgh 1500

    Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a
    Text: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•


    OCR Scan
    PDF 10N60 20N60 31N60 30N60 38N60 40N60 60N60 32N60BS 40N60A ixgh 1500 25N120 200n60 60n60 igbt smd 10N60A 30N60A .25N100 20n60a

    120n60b

    Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
    Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *


    OCR Scan
    PDF O-220 O-263 O-247 28N30 30N30 40N30 2N100 8N100 6N100 12N10Q 120n60b 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B

    50N60

    Abstract: 50N50B IXGH50N50B IXGH50N60B
    Text: Preliminary data V y ces HiPerFAST IGBT Symbol vCES vCGR VGES VGEM Maximum Ratings Test Conditions 500 600 V T,J =25°C to 150°C; RG„E = 1 500 600 V Continuous ±20 V Transient ±30 V 'cm Tc = 25°C, 1ms SSOA VSE = 15 V, TVJ = 125°C, RG= 10 a RBSOA


    OCR Scan
    PDF 50N50B 50N60B 50N50 50N60 O-247 IXGH50N50B IXGH50N60B

    8n80

    Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
    Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1


    OCR Scan
    PDF CS1011 -18io1 CS1011-22io1 CS1011-25io1 CS1250-12io1 CS1250-14io1 CS1250-16io1 CS20-12 CS20-14 CS20-16 8n80 DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B

    DSE 130 -06A

    Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50
    Text: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01


    OCR Scan
    PDF AXC-051 AXC-051-R AXC-102 AXV-002 015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 DSE 130 -06A vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50