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Rochester Electronics LLC FDPF680N10T MOSFET N-CH 100V 12A TO220F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FDPF680N10T	Bulk	37,788		364	1 - 10 - 100 - 1000 $0.83 10000 $0.83	Buy Now
Littelfuse Inc IXTP80N10T MOSFET N-CH 100V 80A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTP80N10T	Tube	9,910		1	1 $3.02 10 $3.02 100 $1.6014 1000 $1.54488 10000 $1.54488	Buy Now
PanJit Group PSMQC280N10LS2_R2_00201 100V/ 28M/ EXCELLECT LOW FOM MOS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	PSMQC280N10LS2_R2_00201	Cut Tape	6,000		1	1 $0.96 10 $0.897 100 $0.8105 1000 $0.56551 10000 $0.56551	Buy Now
	PSMQC280N10LS2_R2_00201	Digi-Reel	6,000		1	1 $0.96 10 $0.897 100 $0.8105 1000 $0.56551 10000 $0.56551	Buy Now
	PSMQC280N10LS2_R2_00201	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.29784	Buy Now
STMicroelectronics STD80N10F7 MOSFET N-CH 100V 70A DPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	STD80N10F7	Digi-Reel	2,159		1	1 $2.06 10 $1.418 100 $1.0819 1000 $0.79831 10000 $0.79831	Buy Now
	STD80N10F7	Cut Tape	2,159		1	1 $2.06 10 $1.418 100 $1.0819 1000 $0.79831 10000 $0.79831	Buy Now
Mouser Electronics	STD80N10F7		4,547			1 $2.01 10 $1.39 100 $1.09 1000 $0.791 10000 $0.698	Buy Now
Newark	STD80N10F7	Cut Tape	1,734		1	1 $2.14 10 $1.84 100 $1.54 1000 $1.21 10000 $1.21	Buy Now
STMicroelectronics	STD80N10F7		4,550		1	1 $1.97 10 $1.36 100 $1.07 1000 $0.85 10000 $0.85	Buy Now
TME	STD80N10F7				1	1 $1.74 10 $1.57 100 $1.25 1000 $1.16 10000 $1.04	Get Quote

Avnet Silica	STD80N10F7		2,500	17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STD80N10F7			27 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	STD80N10F7		23,650			1 - 10 - 100 $1.8333 1000 $1.4895 10000 $1.4895	Buy Now
Infineon Technologies AG IAUA180N10S5N029AUMA1 MOSFET_(75V 120V( PG-HSOF-5
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	IAUA180N10S5N029AUMA1	Cut Tape	1,926		1	1 $3.59 10 $2.55 100 $1.836 1000 $1.4405 10000 $1.4405	Buy Now
	IAUA180N10S5N029AUMA1	Digi-Reel	1,926		1	1 $3.59 10 $2.55 100 $1.836 1000 $1.4405 10000 $1.4405	Buy Now
Mouser Electronics	IAUA180N10S5N029AUMA1		1,657			1 $3.56 10 $2.53 100 $1.82 1000 $1.45 10000 $1.44	Buy Now
Newark	IAUA180N10S5N029AUMA1	Cut Tape	1,979		1	1 $3.77 10 $2.71 100 $1.98 1000 $1.61 10000 $1.61	Buy Now
Rochester Electronics	IAUA180N10S5N029AUMA1		8,901		1	1 - 10 - 100 $1.43 1000 $1.28 10000 $1.21	Buy Now
Chip One Stop	IAUA180N10S5N029AUMA1	Cut Tape	1,925	0 Weeks, 1 Days	1	1 $3.43 10 $2.43 100 $1.75 1000 $1.52 10000 $1.52	Buy Now

EBV Elektronik	IAUA180N10S5N029AUMA1			27 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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80N10 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
80N10 Abstract: 80N10Q Contextual Info: HiPerFETTM Power MOSFETs IXFH 80N10Q IXFT 80N10Q VDSS ID25 = 100 V = 80 A = 15 mW RDS on Q-Class trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary data Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C	Original	80N10Q 200ns O-247 80N10 80N10Q	PDF
Contextual Info: HiPerFETTM Power MOSFETs IXFR 80N10Q TM ISOPLUS247 , Q-Class Electrically Isolated Back Surface VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt trr £ 200 ns RDS(on) = 100 V = 76 A = 15 mW Preliminary Data Sheet Symbol Test Conditions	Original	80N10Q ISOPLUS247	PDF
smd marking 58a Abstract: 80N10L INFINEON PART MARKING to220 pcb footprint SPI80N10L SPP80N10L 80N10 SMD marking code 58A Contextual Info: 80N10L 80N10L SIPMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated VDS Package Ordering Code Marking 80N10L PG-TO220-3-1 Q67042-S4173 80N10L	Original	SPI80N10L SPP80N10L PG-TO262-3-1 PG-TO220-3-1 Q67042-S4173 80N10L smd marking 58a 80N10L INFINEON PART MARKING to220 pcb footprint SPI80N10L SPP80N10L 80N10 SMD marking code 58A	PDF
80N10 Contextual Info: ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET IXFC 80N10 VDSS ID25 RDS on trr ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	80N10 ISOPLUS220TM 728B1 123B1 728B1 065B1 80N10	PDF
80N10 Contextual Info: ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET IXFC 80N10 VDSS ID25 RDS on trr ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	ISOPLUS220TM 80N10 728B1 123B1 065B1 80N10	PDF
80N10 Abstract: to-268 Contextual Info: HiPerFETTM Power MOSFETs VDSS = 100 V = 80 A ID25 Ω RDS on = 12.5 mΩ IXFH 80N10 IXFT 80N10 N-Channel Enhancement Mode Avalanche Rated, High dv/dt trr ≤ 200 ns Preliminary data sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR VGS Maximum Ratings	Original	80N10 O-247 O-268 O-268 80N10 to-268	PDF
80N10Q Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 80N10Q IXFT 80N10Q Q-Class VDSS ID25 RDS on trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C	Original	80N10Q 80N10Q 200ns O-247 O-268 O-268	PDF
Contextual Info: HiPerFETTM Power MOSFETs IXFR 80N10Q TM ISOPLUS247 , Q-Class Electrically Isolated Back Surface VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt trr £ 200 ns = 100 V = 76 A = 15 mW RDS(on) Preliminary Data Sheet Symbol Test Conditions	Original	80N10Q ISOPLUS247	PDF
Contextual Info: DIXYS Advanced Technical Information HiPerFET Power MOSFETs IXFH 80N10Q IXFT 80N10Q Q Class R DS on = 100 V = 80 A = 15 m f t t < 200 ns V DSS ^D25 rr N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Symbol Test Conditions	OCR Scan	80N10Q 80N10Q O-247 O-268	PDF
ISOPLUS247 Abstract: 80N10Q E153432 80N10 Contextual Info: HiPerFETTM Power MOSFETs IXFR 80N10Q TM ISOPLUS247 , Q-Class Electrically Isolated Back Surface VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt trr £ 200 ns RDS(on) = 100 V = 76 A = 15 mW Preliminary Data Sheet Symbol Test Conditions	Original	80N10Q ISOPLUS247 247TM E153432 ISOPLUS247 80N10Q E153432 80N10	PDF
80N10 Abstract: 4800 mosfet mosfet 4800 Contextual Info: ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET IXFC 80N10 VDSS ID25 RDS on trr ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	80N10 ISOPLUS220TM 80lse 80N10 4800 mosfet mosfet 4800	PDF
Contextual Info: HiPerFETTM Power MOSFETs IXFH 80N10Q IXFT 80N10Q VDSS ID25 = 100 V = 80 A = 15 mW RDS on Q-Class trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary data Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C	Original	80N10Q 80N10Q 200ns O-247 O-268 O-268AA	PDF
80N10 Contextual Info: ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET IXFC 80N10 VDSS ID25 RDS on trr ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	ISOPLUS220TM 80N10 220TM 80N10	PDF
smd marking 58a Abstract: 80N10L SPP80N10L SMD marking code 58A SPB80N10L SPI80N10L TP 80N10 SPP80N1 Contextual Info: Preliminary data 80N10L 80N10L,80N10L SIPMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated VDS P-TO262-3-1 100 V RDS on 14 m ID 80 A P-TO263-3-2	Original	SPI80N10L SPP80N10L SPB80N10L P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP80N10L Q67042-S4173 80N10L smd marking 58a 80N10L SMD marking code 58A SPB80N10L SPI80N10L TP 80N10 SPP80N1	PDF

smd marking 58a Abstract: SPB80N10L SPP80N10L 80N10L SPI80N10 Contextual Info: 80N10L SIPMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated VDS 100 V RDS on 14 m ID 80 A P-TO263-3-2 Type Package Ordering Code Marking 80N10L	Original	SPB80N10L P-TO263-3-2 Q67042-S4171 80N10L BSPP80N10L, BSPB80N10L BSPI80N10L, SPP80N10L, smd marking 58a SPB80N10L SPP80N10L 80N10L SPI80N10	PDF
C1162 Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158 Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158	PDF
smd marking 58a Abstract: 80N10L IEC61249-2-21 SPB80N10L SPP80N10L Contextual Info: 80N10L G SIPMOSΤΜPower-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated; Halogen-free according to IEC61249-2-21 Type Package 80N10L P-TO263-3 100 VDS V RDS on	Original	SPB80N10L P-TO263-3 IEC61249-2-21 80N10L SPP80N10L O263-3 smd marking 58a 80N10L IEC61249-2-21 SPB80N10L SPP80N10L	PDF
sd 20n60 Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06	Original	O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80	PDF
7n60b Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3	Original	AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80	PDF
Contextual Info: 80N10F7, 80N10F7, 80N10F7-2, 80N10F7 N-channel 100 V, 0.008 Ω typ., 80 A STripFET VII DeepGATE™ Power MOSFETs in DPAK, TO-220FP, H2PAK-2 and TO-220 Datasheet - production data Features TAB Order codes 3 1 DPAK 1 2 3 TO-220FP 80N10F7 80N10F7	Original	STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7 O-220FP, O-220 O-220FP STF80N10F7 STD80N10F7 STH80N10F7-2	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Contextual Info: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF
C1146 Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60 Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60	PDF
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Contextual Info: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819	PDF
BCM 4336 Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 Contextual Info: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06	Original	B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265	PDF

80N10 Search Results

80N10 Price and Stock

Rochester Electronics LLC FDPF680N10T

Littelfuse Inc IXTP80N10T

PanJit Group PSMQC280N10LS2_R2_00201

STMicroelectronics STD80N10F7

Infineon Technologies AG IAUA180N10S5N029AUMA1

80N10 Datasheets Context Search

80N10

smd marking 58a

80N10

80N10

80N10

80N10Q

ISOPLUS247

80N10

80N10

smd marking 58a

smd marking 58a

C1162

smd marking 58a

sd 20n60

7n60b

7N60B equivalent

C1146

PEF 24628

BCM 4336

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