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    50N5 Search Results

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    50N5 Price and Stock

    Frontier Electronics Co Ltd 0201G250N5R5BCT

    CAP CER 5.5PF 25V C0G/NP0 0201
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    DigiKey 0201G250N5R5BCT Reel 15,000
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    TTM Technologies BD3150N50100AHF

    BALUN 3.1GHZ-5GHZ 50/100 0404
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    DigiKey BD3150N50100AHF Reel 8,000 4,000
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    BD3150N50100AHF Cut Tape 5,583 1
    • 1 $0.86
    • 10 $0.841
    • 100 $0.4593
    • 1000 $0.29189
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    Richardson RFPD BD3150N50100AHF 4,000
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    BD3150N50100AHF 1,600 1
    • 1 $0.6
    • 10 $0.55
    • 100 $0.45
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    Infineon Technologies AG TLE4971A050N5UE0001XUMA1

    SPEED & CURRENT SENSORS PG-TISON
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    DigiKey TLE4971A050N5UE0001XUMA1 Cut Tape 2,484 1
    • 1 $6.31
    • 10 $4.731
    • 100 $3.8898
    • 1000 $3.0488
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    Avnet Americas TLE4971A050N5UE0001XUMA1 Reel 2,500 18 Weeks 2,500
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    Mouser Electronics TLE4971A050N5UE0001XUMA1 4,996
    • 1 $6.31
    • 10 $4.74
    • 100 $3.86
    • 1000 $3.24
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    Infineon Technologies AG TLE4971A050N5E0001XUMA1

    SPEED & CURRENT SENSORS PG-TISON
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    DigiKey TLE4971A050N5E0001XUMA1 Cut Tape 2,023 1
    • 1 $4.25
    • 10 $3.188
    • 100 $2.621
    • 1000 $2.49424
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    Avnet Americas TLE4971A050N5E0001XUMA1 Reel 2,500 18 Weeks 2,500
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    Mouser Electronics TLE4971A050N5E0001XUMA1 2,025
    • 1 $4.25
    • 10 $2.7
    • 100 $2.63
    • 1000 $2.5
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    3M Interconnect N7E50-N516RB-50-WF

    CONN COMPACT FLASH CARD R/A SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey N7E50-N516RB-50-WF Reel 1,620 90
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    • 100 $4.51333
    • 1000 $4.18211
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    N7E50-N516RB-50-WF Cut Tape 86 1
    • 1 $9.61
    • 10 $8.653
    • 100 $8.1512
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    Bristol Electronics N7E50-N516RB-50-WF 70
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    Avnet Asia N7E50-N516RB-50-WF 10 Weeks, 3 Days 2,160
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    Find more 50N5 price and stock on Findchips.com

    50N5 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    50n50

    Abstract: 55N50 150N50 IXFK55N50
    Text: VDSS HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface ID25 RDS(on) Ω 100 mΩ Ω 90 mΩ 500 V 43 A 500 V 48 A trr ≤ 250 ns Single Die MOSFET Maximum Ratings ISOPLUS 247TM Symbol Test Conditions VDSS VDGR


    Original     		PDF ISOPLUS247TM 50N50 55N50 247TM IXFK55N50 50N50 55N50 150N50

    Untitled

    Abstract: No abstract text available
    Text: VDSS HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface ID25 RDS(on) Ω 100 mΩ Ω 90 mΩ 500 V 43 A 500 V 48 A trr ≤ 250 ns Single Die MOSFET Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF ISOPLUS247TM 50N50 55N50 IXFK55N50 50N50 55N50 728B1

    ixys ixfn 55n50

    Abstract: 50n50 IXFK50N50 IXFN50N50 IXFK55N50 IXFN55N50
    Text: HiPerFETTM Power MOSFET IXFN IXFN IXFK IXFK Single Die MOSFET 55N50 50N50 55N50 50N50 VDSS ID25 RDS on 500V 500V 500V 500V 55A 50A 55A 50A 80mΩ 100mΩ 80mΩ 100mΩ trr 250ns 250ns 250ns 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK)


    Original     		PDF 55N50 50N50 250ns O-264 ixys ixfn 55n50 50n50 IXFK50N50 IXFN50N50 IXFK55N50 IXFN55N50

    50n50

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface ID25 500 V 43 A 500 V 48 A trr £ 250 ns RDS(on) 100 mW 80 mW Single MOSFET Die Preliminary data Symbol Test Conditions VDSS VDGR T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW


    Original     		PDF ISOPLUS247TM 50N50 55N50 55N50 247TM

    AWCCA-50N50

    Abstract: No abstract text available
    Text: Wireless Charging Coil Assembly AWCCA-50N50 Pb RoHS / RoHS II Compliant 50 x 50mm Moisture Sensitivity Level MSL – MSL = 1 FEATURES: • Wireless Charging Coil for Transmitter or Receiver applications, (6.3 H & 24μH options) • Outline Dimensions: 50mm x 50mm, height options 3.5mm,


    Original     		PDF AWCCA-50N50 ISO9001 AWCCA-50N50

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFET VDSS IXFE 55N50 IXFE 50N50 Single Die MOSFET ID25 RDS on Ω 90 mΩ Ω 100 mΩ 500 V 50 A 500 V 47 A trr ≤ 250 ns Preliminary data sheet ISOPLUS 227TM (IXFE) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 55N50 50N50 227TM IXFN55N50 IXFE55N50:

    ixys ixfn 55n50

    Abstract: ixys ixfn55n50 IXFK50N50
    Text: HiPerFETTM Power MOSFET IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Single MOSFET Die VDSS I D25 RDS on t rr 500V 500V 500V 500V 55A 80mW 250ns 50A 100mW 250ns 55A 80mW 250ns 50A 100mW 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK) Maximum Ratings


    Original     		PDF 55N50 50N50 50N50 250ns 100mW ixys ixfn 55n50 ixys ixfn55n50 IXFK50N50

    fast IXFX

    Abstract: ixf55n50 50N50 IXFX55N50 125OC PLUS247TM 55N50
    Text: HiPerFETTM Power MOSFETs VDSS ID25 RDS on 500 V 50 A 100 mΩ Ω Ω 500 V 55 A 80 mΩ trr ≤ 250 ns IXFX 50N50 IXFX 55N50 Single Die MOSFET Preliminary data sheet Symbol Test Conditions Maximum Ratings V DSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 50N50 55N50 247TM 125OC fast IXFX ixf55n50 50N50 IXFX55N50 125OC PLUS247TM 55N50

    50n50

    Abstract: IXFN55N50 IXFE50N50 IXFE55N50 55n50
    Text: HiPerFETTM Power MOSFET VDSS IXFE 55N50 IXFE 50N50 Single Die MOSFET ID25 RDS on Ω 90 mΩ Ω 100 mΩ 500 V 50 A 500 V 47 A trr ≤ 250 ns Preliminary data sheet ISOPLUS 227TM (IXFE) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 55N50 50N50 227TM IXFN55N50 IXFE55N50: 50n50 IXFE50N50 IXFE55N50 55n50

    50N5500

    Abstract: A150 B150 C150 D150 VF150 VF25
    Text: VRSM IF AV M IF(RMS) IFSM VF0 rF = = = = = = 5500 4700 7390 73x103 0.8 0.107 Rectifier Diode V A A A V mW 5SDD 50N5500 Doc. No. 5SYA1169-00 Sep. 04 • Patented free-floating silicon technology · Very low on-state losses · Optimum power handling capability


    Original     		PDF 50N5500 5SYA1169-00 CH-5600 50N5500 A150 B150 C150 D150 VF150 VF25

    50N50

    Abstract: IXFE50N50 IXFE55N50 IXFN55N50
    Text: HiPerFETTM Power MOSFET VDSS IXFE 55N50 IXFE 50N50 Single Die MOSFET ID25 RDS on Ω 80 mΩ Ω 100 mΩ 500 V 52 A 500 V 47 A trr ≤ 250 ns Preliminary data sheet ISOPLUS 227TM (IXFE) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C


    Original     		PDF 55N50 50N50 227TM 3000VSD IXFN55N50 IXFE55N50: 50N50 IXFE50N50 IXFE55N50

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface ID25 500 V 43 A 500 V 48 A trr £ 250 ns RDS(on) 100 mW 80 mW Single MOSFET Die Preliminary data Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW


    Original     		PDF ISOPLUS247TM 50N50 55N50 55N50 247TM

    50N60

    Abstract: 50n50 ixgk50n60bu1 G 50N60 50n5 IXGH50N60B
    Text: HiPerFASTTM IGBT with Diode V CES IXGK 50N50BU1 IXGK 50N60BU1 I C25 500 V 75 A 600 V 75 A V CE sat t fi 2.3 V 2.5 V 100ns 120ns Combi Pack Preliminary data Symbol Test Conditions Maximum Ratings 50N50 50N60 VCES VCGR T J = 25°C to 150°C T J = 25°C to 150°C; RGE = 1 MW


    Original     		PDF 100ns 120ns 50N50BU1 50N60BU1 50N50 50N60 O-264 IXGK50N50BU1 IXGK50N60BU1 ixgk50n60bu1 G 50N60 50n5 IXGH50N60B

    55n50

    Abstract: ixys ixfn 55n50 IXFK50N50
    Text: HiPerFETTM Power MOSFET IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Single MOSFET Die VDSS I D25 RDS on t rr 500V 500V 500V 500V 55A 80mW 250ns 50A 100mW 250ns 55A 80mW 250ns 50A 100mW 250ns Preliminary data sheet Symbol Test Conditions TO-264 AA (IXFK) Maximum Ratings


    Original     		PDF 55N50 50N50 50N50 250ns 100mW ixys ixfn 55n50 IXFK50N50

    50N60

    Abstract: G 50N60 50n50 50n50bu1 IXGH50N60B 50n60 transistor IXGK50N50BU1 IXGK50N60BU1 50N50B
    Text: HiPerFASTTM IGBT with Diode V CES IXGK 50N50BU1 IXGK 50N60BU1 I C25 500 V 75 A 600 V 75 A V CE sat t fi 2.3 V 2.5 V 100ns 120ns Combi Pack Preliminary data Symbol Test Conditions Maximum Ratings 50N50 50N60 VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW


    Original     		PDF 50N50BU1 50N60BU1 100ns 120ns 50N50 50N60 O-264 IXGK50N50BU1 IXGK50N60BU1 50N60 G 50N60 50n50 50n50bu1 IXGH50N60B 50n60 transistor IXGK50N50BU1 IXGK50N60BU1 50N50B

    50N60

    Abstract: G 50N60 IXGH50N50B
    Text: HiPerFAST IGBT IXGH 50N50B IXGH 50N60B VcES ^C25 VCE sai tfi 500 V 75 A 2.3 V 80 ns 600 V 75 A 2.5 V 150 ns Preliminary data <) Symbol Test Conditions Maximum Ratings 50N50 50N60 V CES Tj = 25°C to 150°C 500 600 V VcOR Tj = 25°C to 150°C; RGE = 1 M n


    OCR Scan     		PDF 50N50B 50N60B 50N50 50N60 O-247 G 50N60 IXGH50N50B

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet D V DSS HiPerFET Power MOSFET IXFN IXFN IXFK IXFK Single MOSFET Die 55N50 50N50 55N50 50N50 500V 500V 500V 500V K DS on ^D25 55A 50A 55A 50A 85m Q 100m£2 85m£2 100m£2 250ns 250ns 250ns 250ns TO-264 AA (IXFK) Symbol Maximum Ratings


    OCR Scan     		PDF 250ns 250ns 55N50 50N50 50N50 O-264

    50N60

    Abstract: G 50N60 50n60b IXGH50N50B IXGH50N60B
    Text: DIXYS HiPerFAST IGBT V CES IXGH 50N50B IXGH 50N60B 500 V 600 V ^C25 75 A 75 A V CE sat t,i 2.3 V 80 ns 2.5 V 150 ns Preliminary data Symbol Test Conditions Maximum Ratings 50N50 50N60 V CES Tj = 25°C to 150°C 500 600 V V CGR ^ = 25°C to 150°C; RGE = 1 Mi2


    OCR Scan     		PDF 50N50B 50N60B 50N50 50N60 O-247 50N50 G 50N60 50n60b IXGH50N50B IXGH50N60B

    50n60

    Abstract: 50N50B IXGH50N50B IXGH50N60B
    Text: a ix Y S HiPerFAST IGBT v IXGH/IXGT 50N50B IXGH/IXGT 50N60B CES ; t C 25 500 V : 75 A 600 V : 75 A V C E sa t i t ii 2.3 V 80 ns 2.5 V 150 ns Preliminary data Symbol < > Maximum Ratings Test C onditions TO-247 AD (IXGH) 50N50 ¡ 50N60 VCES T, = 25QC to150cC


    OCR Scan     		PDF 50N50B 50N60B 50N50 50N60 O-247 to150cC O-268 50n60 IXGH50N50B IXGH50N60B

    50n50

    Abstract: No abstract text available
    Text: aixYS Advanced Technical Information v HiPerFET Power MOSFETs ISOPLUS247™ IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface DSS p ^D25 500 V 43 A 500 V 48 A trr <250 ns DS(on) 100 mi] 80 m£2 Single MOSFET Die Symbol Test Conditions Maximum Ratings


    OCR Scan     		PDF ISOPLUS247TM 50N50 55N50 Cto150 55N50

    50n50

    Abstract: IXFK55N50 ISOPLUS247 55n50
    Text: Advanced Technical Information □ IX Y S V DSS HiPerFET Power MOSFETs ISOPLUS247™ IXFR 50N50 IXFR 55N50 Electrically Isolated Back Surface D ^D25 500 V 43 A 500 V 48 A t rr < 250 ns DS(on) 100 mQ 80 mQ Single MOSFET Die Symbol TestConditions v Tj = 25°C to 150°C


    OCR Scan     		PDF ISOPLUS247â 50N50 55N50 55N50 IXFK55N50 ISOPLUS247

    IXFN40N50

    Abstract: No abstract text available
    Text: DIXYS IXFN 55N50 IXFN 50N50 IXFK 55N50 IXFK 50N50 Single MOSFET Die rr Test Conditions Maximum Ratings IXFK IXFN IXFN 50 55 50 IXFK 55 Td = 25°C to 150°C T j = 25°C to 150°C 500 500 500 500 V V VGS v GSM Continuous Transient ±20 ¿30 ±20 ±30 V V »D25


    OCR Scan     		PDF IXFN55N50 IXFN50N50 IXFK55N50 IXFK50N50 O-264 OT-227 IXFK55N50 IXFN55N50 BffW80N50 IXFN40N50

    50n60

    Abstract: G 50N60 50N50B wj 508 50n50 IXGH50N50B IXGH50N60B
    Text: □ IXYS Preliminary data V CES HiPerFAST IGBT Symbol IXGH 50N50B IXGH 50N60B 50N50 50N60 500 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£i 500 600 V V GES Continuous ±20 V V GEM Transient ±30 V 'c 2 5 Tc = 25°C 75 A 'c 9 0 Tc = 90°C 50 A ' cm Tc = 25°C, 1 ms


    OCR Scan     		PDF 50N50B 50N60B 50N50 50N60 O-247 50n60 G 50N60 wj 508 50n50 IXGH50N50B IXGH50N60B

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS HiPerFAST IGBT with Diode V CES IXGK 50N50BU1 IXGK 50N60BU1 ^C25 500 V 75 A 600 V 75 A V CE sat tfi 2.3 V 2.5 V 100ns 120ns Combi Pack Preliminary data Symbol Maximum Ratings Test Conditions 50N50 V V CGR Td = 25°C to 150°C Td = 25°C to 150°C; RGE = 1 M£i


    OCR Scan     		PDF 50N50BU1 50N60BU1 100ns 120ns 50N50 50N60 IXGK50N50BU1 IXGK50N60BU1