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    Untitled

    Abstract: No abstract text available
    Text: «HYUNDAI H Y 5 1 1 7 1 O O A S e r ie s 1 6 M x 1 - b it CM O S DRAM DESCRIPTION The HY5117100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5117100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5117100A HY5117100A HY5117100Ato tRASI13) 1RP02) 1AD20-10-MAY94 HY51171OOA HY5117100AJ

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR HY5116400 Series 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400 utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5116400 1AD02-10-APR93 HY5116400JC HY5116400LJC HY5116400TC HY5116400LTC

    Untitled

    Abstract: No abstract text available
    Text: • HY UNDAI HYCFLF16008 Series _8MB x8/x16 Configurable FLASH Memory CARD DESCRIPTION The HYCFLF16008 is the Flash memory card consisting of four 5V-only 16Mbit 2Mx8 Flash memory chips in a metal plate housing. The Hyundai Rash memory card is optimized for the application of data and file storage in


    OCR Scan     		PDF HYCFLF16008 x8/x16 16Mbit 00031flfl 1FC08-01-MAR96 4Li750flfl

    5117404

    Abstract: No abstract text available
    Text: HY 5117404A Series “H Y U N D A I 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5117404A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117404A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF 117404A HY5117404A HY5117404A 1A038-10-MAY95 DD45DD HY5117404AJ HY5117404ASLJ HY51174CMAT 5117404

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 6 7 V 1 8 1 0 0 /1 0 1 64K X 18 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64K x18 SRAM core, address registers, data input registers, a 2-bit burst ad­ dress counter and pipelined output. All synchronous inputs pass through registers controlled by a positiveedge triggered clock K .


    OCR Scan     		PDF 486/Pentium 7ns/12ns/17ns 67MHz 486/Pent 00DbSS3 1DH02-22-MAY95 HY67V18100/101 HY67V18100C

    HY53C464LS

    Abstract: HY53C464
    Text: HYUNDAI HY53C464 Series SEMICONDUCTOR 64Kx 4-bit CMOS DRAM DESCRIPTION The HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.


    OCR Scan     		PDF HY53C464 330mil 18pin 4b750afl 1AA02-20-APR93 HY53C464S HY53C464LS

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 1 7 4 0 0 S e r ie s 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117400 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5117400 1AD05-20-MAR94 4b750fifi HY5117400JC HY5117400UC HY5117400TC HY5117400LTC

    Untitled

    Abstract: No abstract text available
    Text: 16Mbit Synchronous DRAM Series ♦HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 Programmable options include the length of are high speed 3.3 Volt synchronous dynamic RAMs


    OCR Scan     		PDF 16Mbit HY57V164010- HY57V168010- HY57V161610- 1Mx16bit HY57V164010, HY57V168010, HY57V161610 512Kbit 1SD10-Q3-NOV96

    Untitled

    Abstract: No abstract text available
    Text: HY51V16400B Series -HYUNDAI 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16400B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V16400B HY51V16400B 1A047-00-MAY95 HY51V16400BJ HY51V16400BSL HY51V16400BT HY51V16400BSLT

    LD33

    Abstract: ld33 c LD33 F LD33 V HY6264ALP70 LD33 e LD33 voltage 1DB01 HY6264ALJ-70 Hy6264alp-70
    Text: HY6264A Series ‘H YU N D AI 8 K x 8-bit CMOS SRAM DESCRIPTION The HY6264A is a high-speed, low power and 8,192 x 8-bits C M O S static R A M fabricated using Hyundai's high performance twin tub C M O S process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY6264A 70/85/100/120ns 330mil 1270J 1DB01-11-MAY95 HY6264AP LD33 ld33 c LD33 F LD33 V HY6264ALP70 LD33 e LD33 voltage 1DB01 HY6264ALJ-70 Hy6264alp-70

    I0042

    Abstract: HA11
    Text: »HYUNDAI H Y 6 2 8 1 0 0 A -I S e r ie s 128K X 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628100A-I is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY628100A-I 128Kx HY628100A-I T0008 1DD03-11-MAY95 4b75QSfi HY628100ALP-I I0042 HA11

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYCFL001 Series 1MB x8/x16 Configurable FLASH Memory CARD DESCRIPTION The HYCFL001 is the Flash memory card consisting of two 5V-only 4Mbit 512Kx8 Flash memory chips in a metal plate housing. The Hyundai Flash memory card is optimized for the application of data and file storage in the


    OCR Scan     		PDF HYCFL001 x8/x16 512Kx8) 01-MAR96 4b750flfl DDD315S 1FC08-01-MAR96

    Untitled

    Abstract: No abstract text available
    Text: «HYUNDAI HY5116160 Series 1Mx 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116160 16-bit 16-bit. HY5116160 1AD11-10-MAY94 HY5116160JC HY5116160SLJC

    Untitled

    Abstract: No abstract text available
    Text: “H Y U N D A I HY29F080 Series 1M x 8-bit CMOS 5.0 volt-only, Sector Erase Flash Memory KEY FEATURES 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements High performance - 55 ns access time Internal Programming Algorithms - Automatically programs and verifies data at a


    OCR Scan     		PDF HY29F080 G-70I, T-70I, R-70I G-70E, T-70E, R-70E G-90I, T-90I,

    Untitled

    Abstract: No abstract text available
    Text: "H YU N D A I _ HYM572A404A K-Series Unbuffered 4M x 72-bit CMOS DRAM MODULE with EXTENDED DATA OUT DESCRIPTION The HYM572A404A is a 4M x 72-bit EDO mode CMOS DRAM module consisting of eighteen HV5116404A in 24/26 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board 0.1|aF and O.OlnF


    OCR Scan     		PDF HYM572A404A 72-bit HV5116404A HYM572A404AKG/ATKG/ASLKG/ASLTKG 00D5643 1EC07-10-JAN96 HYM572A404AKG

    HY5116164B

    Abstract: HY5116164BJC wx19
    Text: »HYUNDAI HY5116164B Series 1M x 16-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY5116164B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116164B utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116164B 16-bit 16-bit. 1AOS7-10-MAY95 HY5116164BJC HY5116164BSLJC wx19

    HY5116404

    Abstract: No abstract text available
    Text: HY5116404A Series •HYUNDAI 4M X 4-b it C M O S DRAM with Extended Data out DESCRIPTION The HY5116404A is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. The HY5116404A utilizes Hyundai’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116404A 1AD37-10-MAY95 HY5116404AJ HY5116404ASLJ HY5116404AT HY5116404ASLT HY5116404

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI 532810A HYM 8M X M-Series 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532810A is a 8M x 32-bit R et page mods CMOS DRAM module consisting of sixteen HY5117400A in 24/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted


    OCR Scan     		PDF 32810A 32-bit HYM532810A HY5117400A HYM53281OAM/ALM/ATM/ALTM HYM53281OAMG/ALMG/ATMG/ALTMG HYM532810A/AL HYM532810AT/ALT 50flfl

    Untitled

    Abstract: No abstract text available
    Text: “ H Y U N D A I H Y 5 8 8 3 2 1 S e rie s _ 256Kx32bit Synchronous Graphics RAM PRELIMINARY Introduction Overview The eight megabit Synchronous Graphics RAM SGRAM is a single port, application specific memory device designed


    OCR Scan     		PDF 256Kx32bit b75Qfl DDD5370 1SC01-01-NOV96 HY588321 -01-NOV96

    Untitled

    Abstract: No abstract text available
    Text: ‘ H Y U N D A I H Y C F L F 1 6 0 0 4 S e r ie s _ 4MB x8/x16 Configurable FLASH Memory CARD DESCRIPTION The HYCFLF16004 is the Flash memory card consisting of two 5V-only 16Mbit 2Mx8 Flash memory chips in a metal plate housing. The Hyundai Flash memory card is optimized tor the application of data and file storage in


    OCR Scan     		PDF x8/x16 HYCFLF16004 16Mbit 4b750flfl 1FC08-01-MAR96

    Untitled

    Abstract: No abstract text available
    Text: •H Y UN D A I H Y 6 2 2 5 6 A S e r ie s 32Kx 8-bit CMOS SRAM DESCRIPTION The HY62256A is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY62256A A12ries HY62256AP HY62256ALP HY62256ALLP HY62256AJ HY62256ALJ HY62256ALU

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 4 4 0 0 B " H Y U N D A I S e r ie s 1M x 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY514400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY514400B 1AC11-00-MAY94 4b75Gflfl HY514400BJ HY514400BU HY514400BSU HY514400BT

    Untitled

    Abstract: No abstract text available
    Text: HY «H Y U N D A I 5116160 Series 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF 16-bit HY5116160 16-bit. HY5116160 1AD11-10-MAY95 HY5116160JC HY5116160SLJC HY5116160TC

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR HYM540400 Series 4M X 40<bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM540400 is a 4M x 40-bit Fast page mode CMOS DRAM module consisting of ten HY5116400 in 24/28 pin SOJ orTSOP-ll on a 72 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor Is mounted for each


    OCR Scan     		PDF HYM540400 40-bit HY5116400 22/iF HYM540400M/LM/TM/LTM HYM540400MG/LMG/TMG/LTMG HYM540400M/MG HYM54Ã 400TM/TMG