HY5116100B
Abstract: No abstract text available
Text: HY5116100B Series -HYUNDAI 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100B is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. TheHY5116100B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide
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HY5116100B
TheHY5116100B
1AD41-00-MAY9S
4b750Ã
0GG435b
HY5116100BJ
HY5116100BSLJ
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Untitled
Abstract: No abstract text available
Text: HY62256A-I Series »HYUNDAI 32K X 6-bit CMOS SRAM DESCRIPTION The HY62256A-I is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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HY62256A-I
1DC02-11-MA
4b75GflÃ
1DC02-11-MAY94
4b750A
0003f
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HY53C464LS
Abstract: HY53C464
Text: HYUNDAI HY53C464 Series SEMICONDUCTOR 64Kx 4-bit CMOS DRAM DESCRIPTION The HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.
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HY53C464
330mil
18pin
4b750afl
1AA02-20-APR93
HY53C464S
HY53C464LS
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HYM53221OA E-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM53221 OA is a 2M x 32-bit Fast Page mode CMOS DRAM module consisting of four HY5117800B in 28/28 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for
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HYM53221OA
32-bit
HYM53221
HY5117800B
HYM53221OAE/ASLE/ATE/ASLTE
4b750Afl
1CE13-10-DEC94
HYM532210A
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Untitled
Abstract: No abstract text available
Text: ♦HY UNDAI HYM532256A Series SEMICONDUCTOR 256K X 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532256A is a 256K x 32-bit Fast page mode CMOS DRAM module consisting of eight HY534256A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22/tF decoupling capacitor is mounted for each DRAM.
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HYM532256A
32-bit
HY534256A
22/tF
HYM532256AM/ALM
HYM532256AMG/ALMG
4b75oaa
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HY53C464LS
Abstract: HY53C464F hy53c464 hy53c464lf HY53C464LF70 HY53C464S An-313
Text: HY53C464 Seríes " H Y U N D A I 64K X 4-bit CMOS DRAM DESCRIPTION Hie HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.
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HY53C464
330mil
18pin
CMO442)
335ie
P-021
A02-20-MA
HY53C464LS
HY53C464F
hy53c464lf
HY53C464LF70
HY53C464S
An-313
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HY628400LLG-I
Abstract: DV06 138-884
Text: HY628400-I Series «HYUNDAI 512KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400-I is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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HY628400-I
512Kx
1DE02-11-MAY95
HY628400LP-I
HY628400LLP-I
HY628400LG-I
HY628400LLG-I
DV06
138-884
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HYM536220
Abstract: HY5118160 HYM536220W70
Text: •HYUNDAI HYM536220 W-Series 2M X 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536220 is a 2M x 36-bit Fast page mode CM OS DRAM module consisting of four HY5118160 in 42/42 pin SO J and eight HY531000A in 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling
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HYM536220
36-bit
HYM536220
HY5118160
HY531000A
HYM536220W/LW
HYM536220WG/LWG
1cd06-01-sep94
HYM536220W70
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Untitled
Abstract: No abstract text available
Text: HY5216256 Series -HYUNDAI 256Kx 16-bit Video RAM with 2CAS Introduction Overview The 4megabit Video RAM is an application specific memory device designed for graphics applications. It comprises a 256k x16 DRAM memory array interfaced to a 256 x16 Serial Access Memory SAM , or register.
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HY5216256
256Kx
16-bit
16bits
4b750Ã
1VC01-00-MAY95
525mil
64pin
4b750flÃ
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Untitled
Abstract: No abstract text available
Text: HY51V16400A Series HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY51V16400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY51V16400A
HY51V16400A
HY51V16400Ato
4b75Dfifl
1AD31-00-MAY95
0QG441D
HY51V16400AJ
HY51V16400ASU
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Untitled
Abstract: No abstract text available
Text: H Y 5 1 V 1 6 4 0 0 A S e r ie s 4M X 4-bit CMOS DRAM »HYUNDAI PRELIMINARY DESCRIPTION The HY51V16400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY51V16400A
HY51V16400A
HY51V16400Ato
1AD31-00-MAY94
4b750flfl
HY51V16400AJ
HY51V16400ASLJ
HY51V16400AT
HY51V16400ASLT
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Untitled
Abstract: No abstract text available
Text: Y I I I I VI A I I U 11 U l l l HY29F200T/B Series 2 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements • High performance - 70 ns access time • Compatible with JEDEC-Standard Commands
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HY29F200T/B
HY29F200
16-Bit)
G-70I,
T-70I
R-701
G-70E,
T-70E,
R-70E
G-90I
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Untitled
Abstract: No abstract text available
Text: “ H Y U N D A I H Y 5 8 8 3 2 1 S e rie s _ 256Kx32bit Synchronous Graphics RAM PRELIMINARY Introduction Overview The eight megabit Synchronous Graphics RAM SGRAM is a single port, application specific memory device designed
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256Kx32bit
b75Qfl
DDD5370
1SC01-01-NOV96
HY588321
-01-NOV96
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PDF
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HYM536120
Abstract: No abstract text available
Text: -HYUNDAI HYM536120 W-Series 1M x 36-bit CMOS DRAM MODULE DESCraPTION The HYM536120 is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of two HY5118160 in 42/42 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22j»F decoupling
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HYM536120
36-bit
HY5118160
HY531000A
HYM536120W/LW
HYM536120WG/LWG
DQ0-DQ35)
DDGSS34
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Untitled
Abstract: No abstract text available
Text: H Y 6 2 8 1 0 0 HHYUNDAI S e r ie s 128K X 8-bit CMOS SRAM DESCRIPTION The HY628100 is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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HY628100
4L750Ã
000373b
HY628100P
HY628100LP
HY628100LLP
HY628100G
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Untitled
Abstract: No abstract text available
Text: H Y 6 7 V 1 6 1 1 0 /1 1 1 HYUNDAI 64K x 16 Bit SYNCHRONOUS CMOS SRAM PRELIM INARY DESCRIPTION This device integrates high-speed 64Kx16 SRAM core, address registers, data input registers, a 2-bit burst address counter and Non-pipelined output. All synchronous inputs pass through registers controlled by a
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64Kx16
486/Pentium
20ns/25ns/30ns
50MHz
1DH03-11-MAY95
HY67V16110/111
4b750Ã
1DH08-11-MAY95
HY67V16110C
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Untitled
Abstract: No abstract text available
Text: «HYUNDAI HY29F040 Series _512K x 8-bit CMOS 5.0 V-Only, Sector Erase Flash Memory Preliminary DESCRIPTION The HY29F040 is a 4 Megabit, 5.0 Volts only Flash memory device organized as a 512k X 8 bits each. The HY29F040 is offered in an industry standard 32 pin package which is backward compatible to 1 Megabit and also
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HY29F040
1FA02-11-MAY
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Untitled
Abstract: No abstract text available
Text: H Y 5 1 V 1 6 1 6 0 B “H Y U N D A I S e r ie s 1M x 16-bit CMOS DRAM with 2ÜÄ5 DESCRIPTION The HY51V16160B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V16160B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques
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16-bit
HY51V16160B
16-bit.
42/42pin
11B3S
0083P31Q
GDG47SÃ
1AD55-10-MAY95
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PDF
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HYM536120WG70
Abstract: HYM536120W70 HYM536120 HY5118160
Text: H Y M 5 3 6 1 2 0 W - S e r ie s IM I 36-bit CMOS DRAM MODULE - H Y U N D A I DESCRIPTION The HYM536120 is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of two HY5118160 in 42/42 pin SOJ and four HY531000A in 20/26 pin SQJ on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling
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HYM536120
36-bit
HYM536120
HY5118160
HY531000A
HYM536120W/LW
HYM536120WG/LWG
004f1
17WIN.
HYM536120WG70
HYM536120W70
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PDF
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RQW 130
Abstract: A10q
Text: HY51V16400A Series •HYUNDAI 4M X 4-bit CM OS DRAM DESCRIPTION The HY51V16400A is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide
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HY51V16400A
V16400Ato
4b75D6fi
0QD441Q
1AD31-00-MAY95
HY51V16400AJ
HY51V16400ASU
RQW 130
A10q
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PDF
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Untitled
Abstract: No abstract text available
Text: »HYUNDAI HYCFL002 Series 2MB x8/x16 Configurable FLASH Memory CARD DESCRIPTION The HYCFL002 is the Flash memory card consisting of four 5V-only 4Mbit 512Kx8 Rash memory chips in a metal plate housing. Tiie Hyundai Flash memory card is optimized for the application of data and file storage in the
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HYCFL002
x8/x16
512Kx8)
4b750Afl
0D03T4b
1FC08-01-MAR96
4b750flfl
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PDF
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HY53C256LF
Abstract: HY53C256 HY53C256LS D0022 JRC5 mb75a
Text: HY53C256 Series •HYUNDAI 256K X 1-bit CMOS DRAM DESCRIPTION f HY53C25f l fas* dynamic RAM organized 262,144 x 1-bit. The HY53C256 utilizes Hyundai’s CMOS silicon i!in|ra0C^ f SHH° 9y as WeH as advanced circuit techniques to provide wide operating margins to the users
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HY53C256
HY53C25f
300mil
16pin
330m7l8pTn
1aa01-20-may84
HY53C256S
HY53C256LF
HY53C256LS
D0022
JRC5
mb75a
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PDF
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ci 28448
Abstract: No abstract text available
Text: HYUNDAI ELECTRONICS SIE D • 4b750êfl DDDDbTT b?ñ « H Y N K PRELIMINARY •HYUNDAI SEMICONDUCTOR HY534256A 2' iK 4-ill I ( M( S m m i M 1C1200A-JAN92 DESCRIPTION TheHY534256A is a high speed, low power 262,144X 4 bit CMOS dynamic random access memory. Fabricated with the HYUNDAI
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HY534256A
4b75Dflfl
000b7cÃ
M1C1200A-JAN92
PACKAGE-300
400MIL
ci 28448
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PDF
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