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    HY5116100B

    Abstract: No abstract text available
    Text: HY5116100B Series -HYUNDAI 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100B is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. TheHY5116100B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116100B TheHY5116100B 1AD41-00-MAY9S 4b750Ã 0GG435b HY5116100BJ HY5116100BSLJ

    Untitled

    Abstract: No abstract text available
    Text: HY62256A-I Series »HYUNDAI 32K X 6-bit CMOS SRAM DESCRIPTION The HY62256A-I is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY62256A-I 1DC02-11-MA 4b75Gflà 1DC02-11-MAY94 4b750A 0003f

    HY53C464LS

    Abstract: HY53C464
    Text: HYUNDAI HY53C464 Series SEMICONDUCTOR 64Kx 4-bit CMOS DRAM DESCRIPTION The HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.


    OCR Scan     		PDF HY53C464 330mil 18pin 4b750afl 1AA02-20-APR93 HY53C464S HY53C464LS

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM53221OA E-Series 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM53221 OA is a 2M x 32-bit Fast Page mode CMOS DRAM module consisting of four HY5117800B in 28/28 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for


    OCR Scan     		PDF HYM53221OA 32-bit HYM53221 HY5117800B HYM53221OAE/ASLE/ATE/ASLTE 4b750Afl 1CE13-10-DEC94 HYM532210A

    Untitled

    Abstract: No abstract text available
    Text: ♦HY UNDAI HYM532256A Series SEMICONDUCTOR 256K X 32-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM532256A is a 256K x 32-bit Fast page mode CMOS DRAM module consisting of eight HY534256A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22/tF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM532256A 32-bit HY534256A 22/tF HYM532256AM/ALM HYM532256AMG/ALMG 4b75oaa

    HY53C464LS

    Abstract: HY53C464F hy53c464 hy53c464lf HY53C464LF70 HY53C464S An-313
    Text: HY53C464 Seríes " H Y U N D A I 64K X 4-bit CMOS DRAM DESCRIPTION Hie HY53C464 is fast dynamic RAM organized 65,536 x 4-bit. The HY53C464 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins to the users.


    OCR Scan     		PDF HY53C464 330mil 18pin CMO442) 335ie P-021 A02-20-MA HY53C464LS HY53C464F hy53c464lf HY53C464LF70 HY53C464S An-313

    HY628400LLG-I

    Abstract: DV06 138-884
    Text: HY628400-I Series «HYUNDAI 512KX 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400-I is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY628400-I 512Kx 1DE02-11-MAY95 HY628400LP-I HY628400LLP-I HY628400LG-I HY628400LLG-I DV06 138-884

    HYM536220

    Abstract: HY5118160 HYM536220W70
    Text: •HYUNDAI HYM536220 W-Series 2M X 36-blt CMOS DRAM MODULE DESCRIPTION The HYM536220 is a 2M x 36-bit Fast page mode CM OS DRAM module consisting of four HY5118160 in 42/42 pin SO J and eight HY531000A in 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling


    OCR Scan     		PDF HYM536220 36-bit HYM536220 HY5118160 HY531000A HYM536220W/LW HYM536220WG/LWG 1cd06-01-sep94 HYM536220W70

    Untitled

    Abstract: No abstract text available
    Text: HY5216256 Series -HYUNDAI 256Kx 16-bit Video RAM with 2CAS Introduction Overview The 4megabit Video RAM is an application specific memory device designed for graphics applications. It comprises a 256k x16 DRAM memory array interfaced to a 256 x16 Serial Access Memory SAM , or register.


    OCR Scan     		PDF HY5216256 256Kx 16-bit 16bits 4b750Ã 1VC01-00-MAY95 525mil 64pin 4b750flÃ

    Untitled

    Abstract: No abstract text available
    Text: HY51V16400A Series HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY51V16400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V16400A HY51V16400A HY51V16400Ato 4b75Dfifl 1AD31-00-MAY95 0QG441D HY51V16400AJ HY51V16400ASU

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 V 1 6 4 0 0 A S e r ie s 4M X 4-bit CMOS DRAM »HYUNDAI PRELIMINARY DESCRIPTION The HY51V16400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V16400A HY51V16400A HY51V16400Ato 1AD31-00-MAY94 4b750flfl HY51V16400AJ HY51V16400ASLJ HY51V16400AT HY51V16400ASLT

    Untitled

    Abstract: No abstract text available
    Text: Y I I I I VI A I I U 11 U l l l HY29F200T/B Series 2 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements • High performance - 70 ns access time • Compatible with JEDEC-Standard Commands


    OCR Scan     		PDF HY29F200T/B HY29F200 16-Bit) G-70I, T-70I R-701 G-70E, T-70E, R-70E G-90I

    Untitled

    Abstract: No abstract text available
    Text: “ H Y U N D A I H Y 5 8 8 3 2 1 S e rie s _ 256Kx32bit Synchronous Graphics RAM PRELIMINARY Introduction Overview The eight megabit Synchronous Graphics RAM SGRAM is a single port, application specific memory device designed


    OCR Scan     		PDF 256Kx32bit b75Qfl DDD5370 1SC01-01-NOV96 HY588321 -01-NOV96

    HYM536120

    Abstract: No abstract text available
    Text: -HYUNDAI HYM536120 W-Series 1M x 36-bit CMOS DRAM MODULE DESCraPTION The HYM536120 is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of two HY5118160 in 42/42 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22j»F decoupling


    OCR Scan     		PDF HYM536120 36-bit HY5118160 HY531000A HYM536120W/LW HYM536120WG/LWG DQ0-DQ35) DDGSS34

    Untitled

    Abstract: No abstract text available
    Text: H Y 6 2 8 1 0 0 HHYUNDAI S e r ie s 128K X 8-bit CMOS SRAM DESCRIPTION The HY628100 is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY628100 4L750Ã 000373b HY628100P HY628100LP HY628100LLP HY628100G

    Untitled

    Abstract: No abstract text available
    Text: H Y 6 7 V 1 6 1 1 0 /1 1 1 HYUNDAI 64K x 16 Bit SYNCHRONOUS CMOS SRAM PRELIM INARY DESCRIPTION This device integrates high-speed 64Kx16 SRAM core, address registers, data input registers, a 2-bit burst address counter and Non-pipelined output. All synchronous inputs pass through registers controlled by a


    OCR Scan     		PDF 64Kx16 486/Pentium 20ns/25ns/30ns 50MHz 1DH03-11-MAY95 HY67V16110/111 4b750Ã 1DH08-11-MAY95 HY67V16110C

    Untitled

    Abstract: No abstract text available
    Text: «HYUNDAI HY29F040 Series _512K x 8-bit CMOS 5.0 V-Only, Sector Erase Flash Memory Preliminary DESCRIPTION The HY29F040 is a 4 Megabit, 5.0 Volts only Flash memory device organized as a 512k X 8 bits each. The HY29F040 is offered in an industry standard 32 pin package which is backward compatible to 1 Megabit and also


    OCR Scan     		PDF HY29F040 1FA02-11-MAY

    Untitled

    Abstract: No abstract text available
    Text: H Y 5 1 V 1 6 1 6 0 B “H Y U N D A I S e r ie s 1M x 16-bit CMOS DRAM with 2ÜÄ5 DESCRIPTION The HY51V16160B is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY51V16160B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques


    OCR Scan     		PDF 16-bit HY51V16160B 16-bit. 42/42pin 11B3S 0083P31Q GDG47SÃ 1AD55-10-MAY95

    HYM536120WG70

    Abstract: HYM536120W70 HYM536120 HY5118160
    Text: H Y M 5 3 6 1 2 0 W - S e r ie s IM I 36-bit CMOS DRAM MODULE - H Y U N D A I DESCRIPTION The HYM536120 is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of two HY5118160 in 42/42 pin SOJ and four HY531000A in 20/26 pin SQJ on a 72 pin glass-epoxy printed circuit board. 0.22nF decoupling


    OCR Scan     		PDF HYM536120 36-bit HYM536120 HY5118160 HY531000A HYM536120W/LW HYM536120WG/LWG 004f1 17WIN. HYM536120WG70 HYM536120W70

    RQW 130

    Abstract: A10q
    Text: HY51V16400A Series •HYUNDAI 4M X 4-bit CM OS DRAM DESCRIPTION The HY51V16400A is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. The HY51V16400A utilizes Hyundai's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V16400A V16400Ato 4b75D6fi 0QD441Q 1AD31-00-MAY95 HY51V16400AJ HY51V16400ASU RQW 130 A10q

    Untitled

    Abstract: No abstract text available
    Text: »HYUNDAI HYCFL002 Series 2MB x8/x16 Configurable FLASH Memory CARD DESCRIPTION The HYCFL002 is the Flash memory card consisting of four 5V-only 4Mbit 512Kx8 Rash memory chips in a metal plate housing. Tiie Hyundai Flash memory card is optimized for the application of data and file storage in the


    OCR Scan     		PDF HYCFL002 x8/x16 512Kx8) 4b750Afl 0D03T4b 1FC08-01-MAR96 4b750flfl

    HY53C256LF

    Abstract: HY53C256 HY53C256LS D0022 JRC5 mb75a
    Text: HY53C256 Series •HYUNDAI 256K X 1-bit CMOS DRAM DESCRIPTION f HY53C25f l fas* dynamic RAM organized 262,144 x 1-bit. The HY53C256 utilizes Hyundai’s CMOS silicon i!in|ra0C^ f SHH° 9y as WeH as advanced circuit techniques to provide wide operating margins to the users


    OCR Scan     		PDF HY53C256 HY53C25f 300mil 16pin 330m7l8pTn 1aa01-20-may84 HY53C256S HY53C256LF HY53C256LS D0022 JRC5 mb75a

    ci 28448

    Abstract: No abstract text available
    Text: HYUNDAI ELECTRONICS SIE D • 4b750êfl DDDDbTT b?ñ « H Y N K PRELIMINARY •HYUNDAI SEMICONDUCTOR HY534256A 2' iK 4-ill I ( M( S m m i M 1C1200A-JAN92 DESCRIPTION TheHY534256A is a high speed, low power 262,144X 4 bit CMOS dynamic random access memory. Fabricated with the HYUNDAI


    OCR Scan     		PDF HY534256A 4b75Dflfl 000b7cà M1C1200A-JAN92 PACKAGE-300 400MIL ci 28448