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    36N60 Search Results

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    36N60 Price and Stock

    Flip Electronics FCP36N60N

    MOSFET N-CH 600V 36A TO220-3
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    STMicroelectronics STF36N60M6

    MOSFET N-CH 600V 30A TO220FP
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    Flip Electronics FCA36N60NF

    MOSFET N-CH 600V 34.9A TO3PN
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    DigiKey FCA36N60NF Tube 1,056 200
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    STMicroelectronics STB36N60M6

    MOSFET N-CH 600V 30A D2PAK
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    DigiKey STB36N60M6 Cut Tape 985 1
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    Mouser Electronics STB36N60M6 526
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    STMicroelectronics STW36N60M6

    MOSFET N-CHANNEL 600V 30A TO247
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    36N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    36N60

    Abstract: 32N60 IXFN SOT227 fast diode SOT-227 D-68623
    Text: IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 Preliminary Data VDSS HiPerFETTM Power MOSFET ID25 RDS on t rr IXFK/FN 36N60 600V 36A IXFK/FN 32N60 600V 32A 0.18Ω 0.25Ω 250ns 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK)


    Original     		PDF 32N60 36N60 36N60 32N60 250ns O-264 IXFN SOT227 fast diode SOT-227 D-68623

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFH 36N60P IXFT 36N60P IXFK 36N60P VDSS ID25 RDS on t rr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 600 V = 36 A ≤ 190 mΩ Ω ≤ 250 ns Preliminary Data Sheet Symbol


    Original     		PDF 36N60P

    Untitled

    Abstract: No abstract text available
    Text: IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 Preliminary Data VDSS HiPerFETTM Power MOSFET ID25 RDS on t rr IXFK/FN 36N60 600V 36A IXFK/FN 32N60 600V 32A 0.18Ω 0.25Ω 250ns 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK)


    Original     		PDF 32N60 36N60 36N60 32N60 250ns O-264

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFK 36N60Q IXFX 36N60Q VDSS ID25 = 600 V = 36 A Ω = 165 mΩ Q-CLASS RDS on Single MOSFET Die trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Symbol Test Conditions


    Original     		PDF 36N60Q 36N60Q 247TM O-264 728B1

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFH 36N60P IXFK 36N60P IXFT 36N60P VDSS = 600 V ID25 = 36 A Ω RDS on ≤ 190 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C


    Original     		PDF 36N60P O-247

    M 727 36A

    Abstract: ISOPLUS247
    Text: PolarHVTM HiPerFET Power MOSFET IXFR 36N60P VDSS ID25 RDS on trr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25° C to 150° C 600 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 36N60P M 727 36A ISOPLUS247

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFR 36N60P VDSS ID25 = = ≤ ≤ RDS on trr (Electrically Isolated Back Surface) 600 20 200 200 V A Ω mΩ ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C


    Original     		PDF 36N60P

    36N60

    Abstract: IXFN36N60
    Text: HiPerFETTM Power MOSFET IXFN 36N60 VDSS 3 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family 2 4 Preliminary data * 1 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 600 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous


    Original     		PDF 36N60 IXFN36N60 IXFN36N60

    36N60P

    Abstract: 247 AA
    Text: PolarHVTM HiPerFET Power MOSFET IXFH 36N60P IXFK 36N60P IXFT 36N60P VDSS = 600 V ID25 = 36 A Ω RDS on ≤ 190 mΩ ≤ 200 ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C


    Original     		PDF 36N60P 36N60P 247 AA

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information HiPerFETTM Power MOSFETs Q-Class IXFN 36N60Q VDSS ID25 RDS on Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr D G Preliminary data sheet Symbol VDSS = 600 V = 36 A Ω = 165 mΩ S Test Conditions


    Original     		PDF 36N60Q

    ISOPLUS247

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFR 36N60P VDSS ID25 = 600 V = 20 A ≤ 200 mΩ Ω ≤ 250 ns RDS on t rr (Electrically Isolated Back Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Preliminary Data Sheet


    Original     		PDF 36N60P ISOPLUS247

    2n60p

    Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
    Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond


    Original     		PDF IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


    Original     		PDF O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    Untitled

    Abstract: No abstract text available
    Text: HiPerFET Power MOSFETs IXFK / IXFN 32N60 IXFK / IXFN 36N60 V DSS ^D25 600 V 600 V 32 A 36 A D DS on 0.25 Q 0.18 Q N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Preliminary data Symbol Test Conditions Maximum Ratings IXFK


    OCR Scan     		PDF IXFK32N60 IXFN32N60 IXFK36N60 IXFN36N60 32N60 36N60 O-264 OT-227 E153432

    32n60

    Abstract: No abstract text available
    Text: HiPerFET Power MOSFETs IXFK/IXFN 32N60 IXFK/ IXFN 36N60 Test Conditions T j = 25° C to 150° C 600 600 V VDQR T j = 25° C to 150° C; RGS= 1 Mi2 600 600 V Vos Continuous ±20 120 V vGSM Transient ±30 ±30 V ^D25 T c = 25° C, Chip capability 32N60 36N60


    OCR Scan     		PDF IXFK32N60 IXFN32N60 IXFK36N60 IXFN36N60 32N60 36N60 O-264 OT-227 E153432

    36N60

    Abstract: 32N60 D-68623 ld25 sot-223
    Text: IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 Preliminary Data IXFK/FN 36N60 IXFK/FN 32N60 HiPerFET Power MOSFET D vv DSS ^D25 600V 600V 36A 32A DS on 0.18Q 0.25Q 250ns 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions


    OCR Scan     		PDF 32N60 32N60 36N60 36N60 250ns D-68623 ld25 sot-223

    tc 144 e

    Abstract: No abstract text available
    Text: nixYS HiPerFET Power MOSFETs 36N60 36N60 v¥ DSS ^D25 D DS on N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t trr Preliminary data v DSS Tj = 25°C to 150°C 600 600 V VoOR Tj = 25°C to 150°C; RGS = 1 Mi2 600 600 V VGS v GSM Continuous


    OCR Scan     		PDF IXFK36N60 IXFN36N60 O-264 OT-227 tc 144 e

    mosfet 4400

    Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
    Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,


    OCR Scan     		PDF 100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS

    75N1

    Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
    Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH


    OCR Scan     		PDF 76N07-11 76N07-12 67N10 75N10 42N20 50N20 58N20 O-247 O-204 75N1 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 ixtn 44N50 KS 4400 204 3B

    40n80

    Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
    Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18


    OCR Scan     		PDF 5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI

    ixys ixfn 55n50

    Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
    Text: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01


    OCR Scan     		PDF O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60

    IXfk 75 N 50

    Abstract: 15N80 50N-2 110N06 n 100N10 110N06 10n90 IXFH40N30 ixfk73n30
    Text: HiPerFET Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode Type DSS 0 25 DS(on) max. C lss typ. Tc = 25°C New Tc = 25°C n C rss typ. max. qb max. thJC max. D max. pF PF ns nC K/W W IXFH 76N06-11 IXFH 76N06-12 60 76 0.011 0.012 4400


    OCR Scan     		PDF 76N06-11 76N06-12 76N07-11 76N07-12 67N10 75N10 42N20 50N20 50N20S 58N20 IXfk 75 N 50 15N80 50N-2 110N06 n 100N10 110N06 10n90 IXFH40N30 ixfk73n30

    mosfet 4800

    Abstract: ixfn27n80 150N10 IXFN44N50 RD5A Co701 4800 power mosfet IXFN36n60 ixfm40n30 ixfm35n30
    Text: HiPerFET Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode T jm = 150°C >- New V DSS max. V P ' d 25 Tc = 25°C A DS(on) Tc = 25°C Q typ. C rss typ. max. ° 9 typ. PF pF rts nC C iss p thJC PD max. K/W W 7 >- IXFN 200N06 60 200 0.0055


    OCR Scan     		PDF 200N06 200N07 150N10 100N20 106N20 73N30 44N50 48N50 58N50 61N50 mosfet 4800 ixfn27n80 150N10 IXFN44N50 RD5A Co701 4800 power mosfet IXFN36n60 ixfm40n30 ixfm35n30