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    30V 10.5A P-CHANNEL MOSFET Search Results

    30V 10.5A P-CHANNEL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJK0393DPA-00#J53 Renesas Electronics Corporation 30V, 40A, 4.3MΩ Max. N Channel Power MOSFET High Speed Power Switching Visit Renesas Electronics Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    30V 10.5A P-CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    30V 10.5A p-channel MOSFET

    Abstract: PT4435
    Text: PT4435 30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS ON , Vgs@-10V, Ids@-10.5A = 18mΩ RDS(ON), Vgs@-4.5V, Ids@-6.0A = 30mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D D 8 7


    Original     		PDF PT4435 300us, 30V 10.5A p-channel MOSFET PT4435

    Untitled

    Abstract: No abstract text available
    Text: AP4533GEH-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D1/D2 30V ▼ Good Thermal Performance RDS ON 18mΩ ▼ Fast Switching Performance ID 10.5A ▼ RoHS Compliant & Halogen-Free


    Original     		PDF AP4533GEH-HF O-252-4L 100ms

    KHB011N40P1

    Abstract: KHB011N40F1
    Text: SEMICONDUCTOR KHB011N40P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB011N40P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		PDF KHB011N40P1/F1 KHB011N40P1 KHB011N40P1 KHB011N40F1

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KHB011N40P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		PDF KHB011N40P1/F1

    KHB011N40P1

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KHB011N40P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB011N40P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		PDF KHB011N40P1/F1 KHB011N40P1 KHB011N40P1

    KHB011N40F1

    Abstract: KHB011N40F2 KHB011N40P1
    Text: SEMICONDUCTOR KHB011N40P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB011N40P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and


    Original     		PDF KHB011N40P1/F1/F2 KHB011N40P1 Fig15. Fig16. Fig17. KHB011N40F1 KHB011N40F2 KHB011N40P1

    21N50ES

    Abstract: 21N50 TO3P package to-247 to-220 to-3p 21N50E
    Text: DATE CHECKED Oct.-14-'08 CHECKED Oct.-14-'08 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor


    Original     		PDF FMV21N50ES MS5F7233 H04-004-05 H04-004-03 21N50ES 21N50 TO3P package to-247 to-220 to-3p 21N50E

    21N50ES

    Abstract: ic MARKING QG FMH21N50ES
    Text: DATE CHECKED Oct.-14-'08 CHECKED Oct.-14-'08 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor


    Original     		PDF FMH21N50ES MS5F7234 H04-004-05 H04-004-03 21N50ES ic MARKING QG FMH21N50ES

    Untitled

    Abstract: No abstract text available
    Text: DMG7430LFG Green N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features and Benefits • Low RDS ON – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products 10.5A • Occupies just 33% of the board area occupied by SO-8 enabling


    Original     		PDF DMG7430LFG AEC-Q101 DS35497

    Untitled

    Abstract: No abstract text available
    Text: DMG7430LFG Green N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Features and Benefits • Low RDS ON – ensures on state losses are minimized • Small form factor thermally efficient package enables higher density end products 10.5A • Occupies just 33% of the board area occupied by SO-8 enabling


    Original     		PDF DMG7430LFG AEC-Q101 DS35497

    5a6 zener diode

    Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
    Text: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical


    Original     		PDF Si4418DY 130mOhm@ Si4420BDY Si6928DQ 35mOhm@ Si6954ADQ 53mOhm@ SiP2800 SUM47N10-24L 24mOhm@ 5a6 zener diode dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415

    12v 1200W DC POWER SUPPLY SCHEMATIC

    Abstract: DQ65033QMA06NNS 110VDC to 12vdc converter 601 Opto isolator 1000w buck boost converter RTCA DO-160 POWER 12v 28V 3A 60W DC-DC htc legend DC converter 50A 100V NQ04W33SMA16PSS
    Text: VE A AD R V C U N C HE POW T G ER N I Fa l l 2 0 1 0 C omplete Product C atalog Founded in 1997, SynQor has become the technology, quality and service leader for high efficiency dc-dc converters for the telecom/datacom marketplace. The PowerQor®, BusQor®,


    Original     		PDF custo96 12v 1200W DC POWER SUPPLY SCHEMATIC DQ65033QMA06NNS 110VDC to 12vdc converter 601 Opto isolator 1000w buck boost converter RTCA DO-160 POWER 12v 28V 3A 60W DC-DC htc legend DC converter 50A 100V NQ04W33SMA16PSS

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    12A 650V MOSFET

    Abstract: kelvin 1102 piezoelectric circuit charger theory of dac IC 0808 nec Digital Clock Driver 1708f ceramic capacitors 1708
    Text: LTC1708-PG Dual Adjustable 5-Bit VID High Efficiency, 2-Phase Current Mode Synchronous Buck DC/DC Controller U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LTC 1708 is a dual adjustable 5-bit VID programmable step-down switching regulator controller that drives


    Original     		PDF LTC1708-PG 300kHz. LTC3728 550kHz, SSOP-28 LTC3729 550kHz 12-Phase, LTC3732 12A 650V MOSFET kelvin 1102 piezoelectric circuit charger theory of dac IC 0808 nec Digital Clock Driver 1708f ceramic capacitors 1708

    NTC thermistor 100K

    Abstract: INTEL 845 MOTHERBOARD CIRCUIT diagram 550nH president alim FAN53168 FAN53418 TSSOP28 TSSOP-28 CPU AC Loadline intel 845 MOTHERBOARD pcb CIRCUIT diagram
    Text: www.fairchildsemi.com FAN53168 6-Bit VID Controlled 2-4 Phase DC-DC Controller Features General Description • Precision Multi-Phase DC-DC Core Voltage Regulation – ±10mV Output Voltage Accuracy Over Temperature • Differential Remote Voltage Sensing


    Original     		PDF FAN53168 VRM/VRD10 DS300053168 NTC thermistor 100K INTEL 845 MOTHERBOARD CIRCUIT diagram 550nH president alim FAN53168 FAN53418 TSSOP28 TSSOP-28 CPU AC Loadline intel 845 MOTHERBOARD pcb CIRCUIT diagram

    76107P

    Abstract: ms101c DS20A TA76107
    Text: interrii HUF76107P3 Data Sheet O ctober 1999 20A, 30V, 0.052 Ohm, N-Channeì, Logic Level UltraFET Power MOSFETs F ile N um ber 4382.5 Features • Logic Level G ate Drive Th ese N -Channel power M O S F E T s are m anufactured using • 20A, 3 0V the innovative UltraFET process.


    OCR Scan     		PDF HUF76107P3 HUF76107P3 AN7260. 76107P ms101c DS20A TA76107

    76107d

    Abstract: TA76107 F76107D3S F7610 dlis
    Text: in te r r ii HUF76107D3, HUF76107D3S Data S heet 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Th ese N -Channel power u m t$ ' M O S F E T s are m anufactured using J u ly 1999 F ile N u m b e r 4701.1 Features • Logic Level G ate Drive


    OCR Scan     		PDF HUF76107D3, HUF76107D3S HUF76107D3S AN7260. 76107d TA76107 F76107D3S F7610 dlis

    sml8075hn

    Abstract: sml7575hn
    Text: SEMELAB bOE PLC 5133157 ]> M il ODDOflbb HTT ISULB MOS POWER d '“P 3 > ° 1 - 1 $ SML8075HN SML7575HN SML8090HN SML7590HN SEM E LAB 800V 750V 800V 750V 11.5A 11.5A 10.5A 10.5A 0.75Q 0.75Q 0.90Q 0.90LÌ N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		PDF SML8075HN SML7575HN SML8090HN SML7590HN 7575HN 8075HN 7590HN 8090HN Vo5/7575/8090/7590HN 10jiS

    LD 7575 PS

    Abstract: 8075an APT8075AN 7590 8090 apt8090an APT7575AN APT7590AN APT8075 8090A
    Text: ADVANCFD POWFR TECHNOLOGY QEST'ID'I GQODMÔM 7Ü5 • AVP M'ìE 1> AD VAN CED P O W ER 'Xm - \ S Tec h n o lo g y APT8075AN APT7575AN APT8090AN APT7590AN POWER MOS IV 800V 750V 800V 750V 11.5A 11.5A 10.5A 10.5A 0.75 0.75 0.90 0.90 £i Í2 £2 fl N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		PDF 0000MÃ APT8075AN APT7575AN APT8090AN APT7590AN 7575AN 8075AN 7590AN 8090AN O-204AA) LD 7575 PS 7590 8090 APT8075 8090A

    090Q

    Abstract: 0S3C APT8075HN 80-75H 8075HN
    Text: ADVANCED POIilER TECHNOLOGY b lE D • 0E57TCH 0000825 flTfl H A V P A dvanced P o w er Te c h n o lo g y POWER MOS IV _ APT8075HN 800V 11.5A 0.75Q APT7575HN 750V 11.5A 0.75D APT8090HN 800V 10.5A 0.90Q APT7590HN750V 10.5A 0.90Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		PDF 0E57TCH APT8075HN APT7575HN APT8090HN APT7590HN750V 7575HN 8075HN 7590HN 8090HN O-258AA 090Q 0S3C 80-75H

    SEC550

    Abstract: sml5560cn lm 5560 122T-T 200DG
    Text: _ S E ME L A B LOE D PL C 0133107 OODOÛlfl 737 H S M L B MOS POWER = ^ = llll T SML6060CN SML5560CN SML6070CN SML5570CN SEME LAB 600V 550V 600V 550V 4 ;3 f l - i 3 10.5A 10.5A 9.5A 9.5A 0.60ft 0.60ft 0.70ft 0.70ft N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		PDF SML6060CN SML5560CN SML6070CN SML5570CN 5560CN 6060CN 5570CN 6070CN O-254AA SEC550 lm 5560 122T-T 200DG

    APT6060CN

    Abstract: 2SJ10 6060C BAVP APT5560CN APT5570CN APT6070CN
    Text: ADVANCED POWER TECHNOLOGY blE D • □ 2 5 7 ‘iOT □ □ □0 7 t eJ IMT B A V P A d v a n ced W /A p o w e r rÆ ÊÊ T e c h n o l o g y POWER MOS IV APT6060CN APT5560CN APT6070CN APT5570CN 600V 550V 600V 550V 10.5A 10.5A 9.5A 9.5A 0.60Q 0.60Q


    OCR Scan     		PDF APT6060CN APT5560CN APT6070CN APT5570CN 5560CN 6060CN 5570CN 6070CN Junc01 O-254AA 2SJ10 6060C BAVP

    6070AN

    Abstract: t606 APT5560AN APT5570AN APT6060AN APT6070AN
    Text: ADVANCFD POUFR TECHNOLOGY 4=î E 0E57W » 000047b b3b * A V P A dvanced R o w e r t 2p m 5 Te c h n o l o g y O D - M APT6060AN 600V 11.5A 0.60 Q APT5560AN 550V 11.5A 0.60 Q APT6070AN 600V 10.5A 0.70 ft APT5570AN550V 10.5A 0.70 Q Ò s POWER MOS IV _


    OCR Scan     		PDF TECHN0L06Y 000047b APT6060AN APT5560AN APT6070AN APT5570AN 5560AN 6060AN 5570AN 6070AN 6070AN t606

    LD 7575 PS

    Abstract: 8075AN APT8075AN APT7575AN APT8090AN APT7590AN G0004
    Text: ADVANCFD POIilFR TECHNOLOGY M'ìE 0 2 5 7 cl 0 cì D 0000MÖ4 I AVP 7 DB A d va n c ed POWER Te c h n o lo g y APT8075AN 800V 11.5A 0.75 APT7575AN 750V 11.5A 0.75 n APT8090AN 800V 10.5A 0.90 Q, APT7590AN 750V 10.5A 0.90 £2 O D "P3fl-\S O S POWER MOS IV


    OCR Scan     		PDF 0257CI0CI 0000MÃ APT8075AN APT7575AN APT8090AN APT7590AN 7575AN 8075AN 7590AN 8090AN LD 7575 PS G0004