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    76107D Search Results

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    76107D Price and Stock

    Rochester Electronics LLC HUF76107D3S

    N-CHANNEL POWER MOSFET
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    DigiKey HUF76107D3S Bulk 701
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    • 1000 $0.43
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    Rochester Electronics LLC HUF76107D3ST

    N-CHANNEL POWER MOSFET
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    DigiKey HUF76107D3ST Bulk 919
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    • 1000 $0.33
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    Fairchild Semiconductor Corporation HUF76107D3ST

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics HUF76107D3ST 1,372
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    Rochester Electronics HUF76107D3ST 4,730 1
    • 1 $0.3299
    • 10 $0.3299
    • 100 $0.3101
    • 1000 $0.2804
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    Fairchild Semiconductor Corporation HUF76107D3S

    20A, 30V, 0.08ohm, N-Channel Power MOSFET, TO-252AA '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HUF76107D3S 1,050 1
    • 1 $0.4323
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    • 100 $0.4064
    • 1000 $0.3675
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    HARTING Technology Group HUF76107D3ST

    20A, 30V, 0.052 OHM, N-CHANNEL, LOGIC LEVEL ULTRAFET POWER MOSFET Power Field-Effect Transistor, 20A I(D), 30V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA HUF76107D3ST 1,425
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    76107D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOSFET 76107D

    Abstract: 76107d TC298
    Text: 76107D3, 76107D3S Data Sheet 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF76107D3, HUF76107D3S MOSFET 76107D 76107d TC298

    76107d

    Abstract: MOSFET 76107D TA76107 ta7610 HUF76107D3S HUF76107D3ST TB334 HUF76107D3 AN7254 AN9321
    Text: 76107D3, 76107D3S Data Sheet 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF76107D3, HUF76107D3S 76107d MOSFET 76107D TA76107 ta7610 HUF76107D3S HUF76107D3ST TB334 HUF76107D3 AN7254 AN9321

    76107d

    Abstract: MOSFET 76107D AN7254 AN9321 AN9322 HUF76107D3 HUF76107D3S HUF76107D3ST TB334 TC298
    Text: 76107D3, 76107D3S Data Sheet 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF76107D3, HUF76107D3S 2003opment. 76107d MOSFET 76107D AN7254 AN9321 AN9322 HUF76107D3 HUF76107D3S HUF76107D3ST TB334 TC298

    Untitled

    Abstract: No abstract text available
    Text: 76107D3, 76107D3S Data Sheet 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title HUF76 107D3, HUF76 107D3 S /Subject (20A, 30V, 0.052 Ohm, NChannel, Logic Level UltraF ET Power MOSFETs) /Autho r () /Keywords (Intersil Corporation,


    Original     		PDF HUF76107D3, HUF76107D3S HUF76 107D3, 107D3

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    76107d

    Abstract: HUF76107D3S MOSFET 76107D AN7254 AN9321 AN9322 HUF76107D3 HUF76107D3ST TB334 TC298
    Text: 76107D3, 76107D3S Data Sheet 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF76107D3, HUF76107D3S 200opment. 76107d HUF76107D3S MOSFET 76107D AN7254 AN9321 AN9322 HUF76107D3 HUF76107D3ST TB334 TC298

    76107d

    Abstract: TA76107 F76107D3S F7610 dlis
    Text: in te r r ii 76107D3, 76107D3S Data S heet 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Th ese N -Channel power u m t$ ' M O S F E T s are m anufactured using J u ly 1999 F ile N u m b e r 4701.1 Features • Logic Level G ate Drive


    OCR Scan     		PDF HUF76107D3, HUF76107D3S HUF76107D3S AN7260. 76107d TA76107 F76107D3S F7610 dlis

    76107d

    Abstract: TC298
    Text: 76107D3, 76107D3S Semiconductor Data Sheet 20A, 30 V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF76107D3, HUF76107D3S HUF76107 76107d TC298

    76107d

    Abstract: TC298
    Text: ASSESS? HUF76107P3, 76107D3, 76107D3S 20A, 30V, 0.052 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs June 1998 Description Features m • Logic Level Gate Drive These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    OCR Scan     		PDF HUF76107P3, HUF76107D3, HUF76107D3S TB334, HUF76107D3S T0-252AA 330mm EIA-481 76107d TC298