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    APT8075 Search Results

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    APT8075 Price and Stock

    Microchip Technology Inc APT8075BN

    MOSFET N-CH 800V 13A TO247AD
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    DigiKey APT8075BN Tube
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    Microchip Technology Inc APT8075BVRG

    Transistor MOSFET N-Channel 800V 12A 3-Pin TO-247 - Rail/Tube (Alt: APT8075BVRG)
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    Avnet Americas APT8075BVRG Tube 26 Weeks 40
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    Mouser Electronics APT8075BVRG 38
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    Newark APT8075BVRG Bulk 40
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    NAC APT8075BVRG Tube 41
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    Advanced Power Technology APT8075BN

    POWER FIELD-EFFECT TRANSISTOR, 13A I(D), 800V, 0.75OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AD
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    Quest Components APT8075BN 519
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    APT8075BN 104
    • 1 $13.5
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    AP APT8075BN

    POWER FIELD-EFFECT TRANSISTOR, 13A I(D), 800V, 0.75OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components APT8075BN 220
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    Microchip Technology Inc APT8075BNG

    POWER MOSFET TRANSISTOR
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    Richardson RFPD APT8075BNG 1
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    APT8075 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Type PDF
    APT8075 Advanced Power Technology Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Original PDF
    APT8075 Advanced Power Technology TRANSISTOR,MOSFET,N-CHANNEL Scan PDF
    APT8075AN Advanced Power Technology Power MOS IV Scan PDF
    APT8075BN Advanced Power Technology N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET Original PDF
    APT8075BN Microsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 13A TO247AD Original PDF
    APT8075BN Advanced Power Technology Power MOS IV - N-channel Enhancement Mode High Voltage Power MOSFETS Scan PDF
    APT8075BNR Advanced Power Technology Power MOS IV Scan PDF
    APT8075BVFR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT8075BVFR Microsemi Power MOS V FREDFET Original PDF
    APT8075BVR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT8075DN Advanced Power Technology APT Power MOS IV Commercial and Custom DIE Scan PDF

    APT8075 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT8075BVFR

    Abstract: No abstract text available
    Text: APT8075BVFR Ω 12A 0.750Ω 800V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT8075BVFR O-247 O-247 APT8075BVFR

    APT8075BVR

    Abstract: No abstract text available
    Text: APT8075BVR 800V 12A 0.750Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original     		PDF APT8075BVR O-247 O-247 APT8075BVR

    Untitled

    Abstract: No abstract text available
    Text: APT8075BVFR 12A 0.750Ω 800V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT8075BVFR O-247 O-247

    8075bn

    Abstract: apt8075bn 8090BN APT8090BN
    Text: D TO-247 G S POWER MOS IV APT8075BN 800V 13.0A 0.75Ω APT8090BN 800V 12.0A 0.90Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: T C = 25°C unless otherwise specified. MAXIMUM RATINGS APT 8075BN APT 8090BN UNIT Drain-Source Voltage


    Original     		PDF O-247 APT8075BN APT8090BN 8075BN 8090BN O-247AD 8075bn 8090BN

    8075b

    Abstract: No abstract text available
    Text: D TO-247 G S POWER MOS IV APT8075BN 800V 13.0A 0.75Ω Ω APT8090BN 800V 12.0A 0.90Ω Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage


    Original     		PDF O-247 APT8075BN APT8090BN 8075BN 8090BN O-247AD 8075b

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P ow er Te c h n o l o g y O D U/ O S APT8075SN Ù 800V 13.0A 0.75Q POWER MOS IV® N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified. Parameter Drain-Source Voltage


    OCR Scan     		PDF APT8075SN

    LD 7575 PS

    Abstract: 8075AN APT8075AN APT7575AN APT8090AN APT7590AN G0004
    Text: ADVANCFD POIilFR TECHNOLOGY M'ìE 0 2 5 7 cl 0 cì D 0000MÖ4 I AVP 7 DB A d va n c ed POWER Te c h n o lo g y APT8075AN 800V 11.5A 0.75 APT7575AN 750V 11.5A 0.75 n APT8090AN 800V 10.5A 0.90 Q, APT7590AN 750V 10.5A 0.90 £2 O D "P3fl-\S O S POWER MOS IV


    OCR Scan     		PDF 0257CI0CI 0000MÃ APT8075AN APT7575AN APT8090AN APT7590AN 7575AN 8075AN 7590AN 8090AN LD 7575 PS G0004

    APT8075BVR

    Abstract: No abstract text available
    Text: APT8075BVR A d van ced P o w er Te c h n o l o g y ' 800V 12A 0.750ÌÌ POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT8075BVR O-247 APT8075BVR MIL-STD-750 --12A O-247AD

    Untitled

    Abstract: No abstract text available
    Text: A dvanced po w er Te c h n o l o g y * APT8075BNR 800V 13.0A 0.75Í2 APT8090BNR 800V 12.0A 0.90ÍÍ O D O S POWER MOS IV« AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS Parameter APT8075BNR APT8090BNR UNIT


    OCR Scan     		PDF APT8075BNR APT8090BNR APT8075BNR APT8090BNR APT8075/8090BNR

    APT901RBN

    Abstract: apt4530bn APT801R2BN APT4030BN APT902R4BN APT*1002R4BN APT1003R5BN APT3520BN APT1001RBN APT1002RBN
    Text: ADVANCED POWER TECHNOLOGY C APT PART N U M BER APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN APT902R4BN APT903R5BN APT904R2BN APT8075BN A PT8090BN APT801R2BN A PT801R4BN APT802RBN A PT802R4BN APT7575BN


    OCR Scan     		PDF 000027b APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN apt4530bn APT801R2BN APT4030BN APT902R4BN APT*1002R4BN APT3520BN

    APT5025AN

    Abstract: APT4020AN APT6040AN APT1002RAN APT1003R5AN APT3540AN APT4525AN apt5025 APT902R4AN apt902ran
    Text: A D V A N C E D PO W E R T E C H N O L O G Y APT PA R T NUMBER APT1001 RAN APT1001R2AN APT1002RAN APT1002R4AN APT1003R5AN APT1004R2AN APT901RAN APT901R2AN APT902RAN APT902R4AN APT903R5AN APT904R2AN APT8075AN APT8090AN APT801R2AN APT801R4AN APT802RAN APT802R4AN


    OCR Scan     		PDF 0000S75 APT1001 APT1001R2AN APT1002RAN APT1002R4AN APT1003R5AN APT1004R2AN APT901RAN APT901R2AN APT902RAN APT5025AN APT4020AN APT6040AN APT3540AN APT4525AN apt5025 APT902R4AN

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED P o w er Te c h n o l o g y • APT8075SN 800V 13.0A 0.75Q POWER MOS IV' N -CH A N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: T c = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT8075SN


    OCR Scan     		PDF APT8075SN

    090Q

    Abstract: 0S3C APT8075HN 80-75H 8075HN
    Text: ADVANCED POIilER TECHNOLOGY b lE D • 0E57TCH 0000825 flTfl H A V P A dvanced P o w er Te c h n o lo g y POWER MOS IV _ APT8075HN 800V 11.5A 0.75Q APT7575HN 750V 11.5A 0.75D APT8090HN 800V 10.5A 0.90Q APT7590HN750V 10.5A 0.90Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		PDF 0E57TCH APT8075HN APT7575HN APT8090HN APT7590HN750V 7575HN 8075HN 7590HN 8090HN O-258AA 090Q 0S3C 80-75H

    8075bn

    Abstract: 8075b APT7575BN APT7590BN APT8075BN APT8090BN 090Q 7575b
    Text: O D Ô s ADVANCED P ow er T e c h n o lo g y 9 APT8075BN APT7575BN APT8090BN APT7590BN POWER MOS IVfi 800V 750V 8Q0V 750V 13.0A 13.0A 12.0A 12.0A 0.75Q Q.75Q 0.90Q 0.90Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T_ = 25°C unless otherwise specified.


    OCR Scan     		PDF APT8075BN APT7575BN APT8090BN APT7590BN 7575BN 8075BN 7590BN 8090BN O-247AD 8075b 090Q 7575b

    APT8075BNR

    Abstract: Kennedy
    Text: A dvanced P ow er Tec h n o lo g y 8 O D APT8075BNR APT8090BNR O s H?'w e r m o s n a 800V 13.0A 0.75fi 800V 12.0 A 0.90Í2 AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Sym bol All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT8075BNR APT8090BNR APT8075/8090BNR O-247AD Kennedy

    LD 7575 PS

    Abstract: 8075an APT8075AN 7590 8090 apt8090an APT7575AN APT7590AN APT8075 8090A
    Text: ADVANCFD POWFR TECHNOLOGY QEST'ID'I GQODMÔM 7Ü5 • AVP M'ìE 1> AD VAN CED P O W ER 'Xm - \ S Tec h n o lo g y APT8075AN APT7575AN APT8090AN APT7590AN POWER MOS IV 800V 750V 800V 750V 11.5A 11.5A 10.5A 10.5A 0.75 0.75 0.90 0.90 £i Í2 £2 fl N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS


    OCR Scan     		PDF 0000MÃ APT8075AN APT7575AN APT8090AN APT7590AN 7575AN 8075AN 7590AN 8090AN O-204AA) LD 7575 PS 7590 8090 APT8075 8090A

    090Q

    Abstract: t8075 t80-75 8075bn APT6076
    Text: O A D d v a n c e d P o w er T e c h n o lo g y 9 APT8075BN APT7575BN APT8090BN APT7590BN Ô S POWER MOS IV 800V 750V 800V 750V 13.0A 13.0A 12.0A 12.0A 0.75Q 0.75Q 0.90Q 0.90Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIMUM RATING S All Ratings: T c = 25°C unless otherwise specified


    OCR Scan     		PDF APT8075BN APT7575BN APT8090BN APT7590BN 7575BN 8075BN 7590BN 8090BN APT8075/7575/8090/7590BN APT6076^ 090Q t8075 t80-75 APT6076

    090Q

    Abstract: 8075BN
    Text: O A dvanced R ow er Te c h n o lo g y D APT8075BN APT7575BN APT8090BN APT7590BN ô s 5 5 w e r m o s rm 800V 750V 800V 750V 13.0A 13.0A 12.0A 12.0A 0.75Í2 0.75Í1 0.90n 0.90Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT8075BN APT7575BN APT8090BN APT7590BN 7575BN 8075BN 7590BN 8090BN APT8075/7575/8090/7590BN APT8075/8090BN 090Q

    APT5085BN

    Abstract: APT501R1BN APT801R2BN APT5025BN APT1002R4BN
    Text: ADVANCED APT PA R T NUM BER APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN APT1003R5BN APT1004R2BN APT901RBN APT901R2BN APT902RBN APT902R4BN APT903R5BN APT904R2BN APT8075BN APT8090BN APT801R2BN APT801R4BN APT802RBN APT802R4BN APT7575BN APT7S90BN APT751R2BN


    OCR Scan     		PDF 0GDD27b APT1001RBN APT1001R2BN APT1002RBN APT1002R4BN O-247 APT5085BN APT501R1BN APT801R2BN APT5025BN

    diode 22 16Q

    Abstract: No abstract text available
    Text: APT8075BVR • R A dvanced W .\A p o w e r Te c h n o l o g y “ soov i2 a 0.750Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT8075BVR O-247 diode 22 16Q

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P o w er Te c h n o l o g y OD OS POWER MOS IV® APT8075BN 800V 13.0A 0.75Í1 APT8090BN 800V 12.0A 0.90Í1 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: T c = 25°C unless otherwise specified.


    OCR Scan     		PDF APT8075BN APT8090BN 8075BN 8090BN APT8075/8090BN O-247AD

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P ow er Te c h n o lo g y O D APT8075BN APT7575BN APT8090BN APT7590BN Ó S POWER MOS IVe 800V 750V 800V 750V 13.0A 13.0A 12.0A 12.0A 0.75Q 0.75Q 0.90Í2 0.90Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: T_ = 25°C unless otherwise specified.


    OCR Scan     		PDF APT8075BN APT7575BN APT8090BN APT7590BN 8075BN 7590BN 7575BN 8090BN Na06SÂ /0608/SÂ

    APT8075BNR

    Abstract: APT8090BNR
    Text: O D O S A d va n ced R o w er Te c h n o l o g y APT8075BNR APT8090BNR POWER MOS IV' 800V 800V 13.0A 0.75ÍÍ 12.0A 0.90ÍÍ AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATING S Symbol VDSS All Ratings: T c = 25°C unless otherwise specified.


    OCR Scan     		PDF APT8075BNR APT8090BNR O-247AD

    Untitled

    Abstract: No abstract text available
    Text: A d v a n ced P o w er Te c h n o l o g y O D Ô S APT8075BNR APT8090BNR 800V 800V POWER MOS IVe 13.0A 0.7512 12.0A 0.90U UIS RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V Parameter 'd C ontinuous Drain C urrent @ Tc - 25°C


    OCR Scan     		PDF APT8075BNR APT8090BNR APT8075BNR APT8090BNR MIL-STD-750 T0-247AD