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    30V 10.5A p-channel MOSFET

    Abstract: PT4435
    Text: PT4435 30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS ON , Vgs@-10V, Ids@-10.5A = 18mΩ RDS(ON), Vgs@-4.5V, Ids@-6.0A = 30mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D D 8 7


    Original     		PDF PT4435 300us, 30V 10.5A p-channel MOSFET PT4435