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    2SJ108 Search Results

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    2SJ108 Price and Stock

    Samtec Inc RF316-05SP3-02SJ1-0826

    Cable Assembly RG316 0.826m 26AWG TNC to MCX PL-F Bulk - Bulk (Alt: RF316-05SP3-02SJ1-0826)
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    Samtec Inc RF178-02SJ1-02SJ1-0800

    RF Cable Assemblies
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    Samtec Inc RF174-01SP1-02SJ1-0800

    RF Cable Assemblies 50 Ohm RF Cable Assembly, RG 174 Cable
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    2SJ108 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SJ108 Unknown FET Data Book Scan PDF
    2SJ108 Toshiba Silicon P channel field effect transistor for low noise audio amplifier applications Scan PDF
    2SJ108 Toshiba TO-92 Mini Package Transistors / Junction FETs Scan PDF
    2SJ108 Toshiba FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE Scan PDF
    2SJ108BL Toshiba TRANS JFET P-CH 2MA 3(2-4E1C) Original PDF
    2SJ108GR Toshiba TRANS JFET P-CH 2MA 3(2-4E1C) Original PDF
    2SJ108V Toshiba TRANS JFET P-CH 2MA 3(2-4E1C) Original PDF

    2SJ108 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2sj111

    Abstract: 2SJ131 2sj110 2SJ112 2sj155 2SJ124 transistor 2sj162 2SJ109 2SJ113 2SJ122
    Text: Absolutes maximum ratings Ta=25ºC PartNumber V* VGS* IG Electrical characteristics (Ta=25ºC) IDSS(mA) gm(mS) ID Pd/Pch Tj/Tch min 2SJ101 2SJ102 2SJ103 2SJ104 2SJ105 2SJ106 2SJ107 2SJ108 2SJ109 2SJ110 2SJ111 2SJ112 2SJ113 2SJ114 2SJ115 2SJ116 2SJ117 2SJ118


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    2SJ101 2SJ102 2SJ103 2SJ104 2SJ105 2SJ106 2SJ107 2SJ108 2SJ109 2SJ110 2sj111 2SJ131 2sj110 2SJ112 2sj155 2SJ124 transistor 2sj162 2SJ109 2SJ113 2SJ122 PDF

    Transistor 2sj108

    Abstract: 2SJ108 2SK370 Toshiba 2SJ
    Text: 2SJ108 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 Low Noise Audio Amplifier Applications Unit: mm • Recommended for first stages of EQ amplifiers and MC head amplifiers. • High |Yfs|: |Yfs| = 22 mS typ. (VDS = −10 V, VGS = 0, IDSS = −3 mA)


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    2SJ108 2SK370 Transistor 2sj108 2SJ108 2SK370 Toshiba 2SJ PDF

    2SK370 TOSHIBA

    Abstract: 2SJ108 Toshiba 2SJ
    Text: 2SJ108 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 Low Noise Audio Amplifier Applications Unit: mm • Recommended for first stages of EQ amplifiers and MC head amplifiers. • High |Yfs|: |Yfs| = 22 mS typ. (VDS = −10 V, VGS = 0, IDSS = −3 mA)


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    2SJ108 2SK370 25esented 2SK370 TOSHIBA 2SJ108 Toshiba 2SJ PDF

    2sk170 FET

    Abstract: Junction-FET fet to92 2SK364 2SK118 2sk117 2SJ74 2sk879 2sj105 2SJ14
    Text: Part Number 2SK246 Nch 2SJ103 Pch 2SK117 Nch 2SK362 Nch 2SK363 Nch 2SK364 Nch 2SJ104 Pch 2SK30ATM 2SK170 Nch 2SJ74 Pch 2SK369 Nch 2SK373 Nch 2SK330 Nch 2SJ105 Pch 2SK184 Nch 2SK365 Nch 2SK372 Nch 2SK366 Nch 2SJ107 Pch 2SK118 Nch 2SK370 Nch 2SJ108 Pch 2SK371 Nch


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    2SK246 2SJ103 2SK117 2SK362 2SK363 2SK364 2SJ104 2SK30ATM 2SK170 2SJ74 2sk170 FET Junction-FET fet to92 2SK118 2SJ74 2sk879 2sj105 2SJ14 PDF

    2SJ108

    Abstract: 2SK370
    Text: 2SJ108 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 Low Noise Audio Amplifier Applications Unit: mm • Recommended for first stages of EQ amplifiers and MC head amplifiers. • High |Yfs|: |Yfs| = 22 mS typ. (VDS = −10 V, VGS = 0, IDSS = −3 mA)


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    2SJ108 2SK370 2SJ108 2SK370 PDF

    2SJ108

    Abstract: 2SK370 Toshiba 2SJ
    Text: 2SJ108 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 Low Noise Audio Amplifier Applications Unit: mm • Recommended for first stages of EQ amplifiers and MC head amplifiers. · High |Yfs|: |Yfs| = 22 mS typ. (VDS = −10 V, VGS = 0, IDSS = −3 mA)


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    2SJ108 2SK370 2SJ108 2SK370 Toshiba 2SJ PDF

    2SK370

    Abstract: 2SJ108
    Text: 2SK370 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK370 For Low Noise Audio Amplifier Applications Unit: mm • Suitable for use as first stage for equalizer and MC head amplifiers. · High |Yfs|: |Yfs| = 22 ms typ. (VDS = 10 V, VGS = 0, IDSS = 3 mA)


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    2SK370 2SJ108 2SK370 2SJ108 PDF

    2SJ108

    Abstract: 2SK370 Toshiba 2SJ 2SK370 TOSHIBA
    Text: 2SK370 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK370 For Low Noise Audio Amplifier Applications Unit: mm • Suitable for use as first stage for equalizer and MC head amplifiers. • High |Yfs|: |Yfs| = 22 ms typ. (VDS = 10 V, VGS = 0, IDSS = 3 mA)


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    2SK370 2SJ108 2SJ108 2SK370 Toshiba 2SJ 2SK370 TOSHIBA PDF

    2SK370

    Abstract: 2SJ108
    Text: TOSHIBA 2SJ108 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2 S J 1 08 LOW NOISE AUDIO AMPLIFIER APPLICATIONS • U nit in mm Recommended for First Stages of EQ Amplifiers and MC Head 4.2MAX — Amplifiers. • High |Yfs| x: < I fSI ro 1


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    2SJ108 --10V, 55MAX ----10V, 2SK370 2SJ108 PDF

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SJ108 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2 S J 1 08 Unit in mm LOW NOISE AUDIO AMPLIFIER APPLICATIONS Recommended for First Stages of EQ Amplifiers and MC Head Amplifiers. 4 .2 M A X . H igh |Yfs| : |Yfs| = 22mS Typ. (VDS= —10V, VGS = 0, IDSS= -3m A )


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    2SJ108 2SK370 PDF

    2SJ108

    Abstract: 2SK370
    Text: 2SJ108 TOSHIBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2 S J 1 08 Unit in mm LOW NOISE AUDIO AMPLIFIER APPLICATIONS • Recommended for First Stages of EQ Amplifiers and MC Head Amplifiers. • High |Yfs| : |Yfs| = 22mS Typ. (VDS= -10V , VGS = 0, IDSS=-3m A )


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    2SJ108 ----10V, 2SK370 XV11YV1U 55MAX. 2SJ108 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ108 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE 2 S J 1 08 LOW NOISE AUDIO AMPLIFIER APPLICATIONS • Unit in mm Recommended for First Stages of EQ Amplifiers and MC Head 4.2 VI A X . Amplifiers. • TTicrVi e >~ II V * lry Ji


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    2SJ108 --10V, ----10V, 2SK370 PDF

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 2SA1245 167 *2SC1923 2SC2996 266 * 2N3905 2SA1255 170 *2SC1959 2SC3011 272


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    2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737 PDF

    2SK370

    Abstract: 2SJ108
    Text: T O S H IB A 2SK370 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK370 Unit in mm FOR LO W NOISE AUDIO AM PLIFIER APPLICATIONS Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfe| : |Yfs| = 22ms Typ. (VD S=10V , VGS = 0, IDSS = 3mA)


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    2SK370 2SJ108 55MAX. 2SK370 2SJ108 PDF

    2SJ108

    Abstract: 2SK370 IDSS -6.5mA
    Text: TOSHIBA 2SK370 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK370 FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS • U nit in mm Suitable for Use as First Stage for Equalizer and MC Head 4.2MAX. Amplifiers. High |Yfc| : |Yfs | = 22ms Typ. (VDg = 10V, VGS = 0, IDg g = 3mA)


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    2SK370 2SJ108 55MAX 2SK370 IDSS -6.5mA PDF

    2SC3378

    Abstract: 2SK118 2SC245S 2sa137 2SA1048 2SA1049 2SA1150 2SC2458 2SC2469 2SC2710
    Text: Powered —3 O n X by H 2. MINI PACKAGE SERIES CD ICminer.com > rH H H n 73 m Electronic-Library —3 m \ Application o "O '— 3 O General Purpose’* Low Noise High Voltage High Current Ji High Current O X m m o Low Impedance Low N< H Audio Drive & Out


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    2SC2458 2SA1048 2SC245S 2sk367 2sk370 2sk371 2sk372 2sj105 2sj107 2SC3378 2SK118 2sa137 2SA1049 2SA1150 2SC2458 2SC2469 2SC2710 PDF

    2sk405 2sj115

    Abstract: 2SK389 2SK400 2SK385 2SJ109 2SJ112 2SJ114 2SK388 2SK373 2SK370
    Text: - 46 - f M £ tt £ m W l % 3: fe V* & % K V * ft (V) (A) m ft* P d /P c h (W) Ig s s (max) (A) Vg s (V) ft te % te (Ta=25tî) IÇfcU (min) (max) V d s (V) (V) (V) (min) (max) Vd s (A) (A) (V) g m (min) (S) Id (A) Vd s (V) W Id (A) LF HV A, CC N D -100 GDS


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    2SK368 2SK369 2SK370 2SK371 2SK372 2SK386 2SK387 2SK388 20mVmax 2SJ109 2sk405 2sj115 2SK389 2SK400 2SK385 2SJ112 2SJ114 2SK388 2SK373 2SK370 PDF

    2sj111

    Abstract: 2SJ131 2SJ112 2SJ110 2SJ122 2SK722 2SJ121 2sj135 2SJ106 2SJ129
    Text: - 18 - §ü % tt € m tit ià ië f f j II =e 1 K 2SJ106 L F A, A - S W 2SJ107 L F A, A ~ S W j fë £ V* V * t* (V) ft * W. X I* ft (A) P d/ Pc h (max) (A) (W) M 4# te (max) (V) Vd s (V) (Ta=25Tï) I gss Vg s (V) (min) (A) (max) V d s (A) (V) (min) (V)


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    2SJ106 2SJ107 2SJ108 2SJ109 2SJ110 100kQ, 2SJ129 2SJ130 2SK722 2SJ131 2sj111 2SJ131 2SJ112 2SJ110 2SJ122 2SJ121 2sj135 2SJ106 2SJ129 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK370 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K3 7 Q FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS Unit in mm S u ita b le for U se as F ir s t S ta g e for E q u a liz e r a n d MC H e a d 4.2 VI A X . Amplifiers. TTiO“


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    2SK370 2SJ108 PDF

    2SC3378

    Abstract: 25A1048
    Text: —3 O IA un H CO 3» 2. MINI PACKAGE SERIES rS fc > TRANSISTOR Application NPN PNP 2SC2458 General Purpose’* v CE sat) MAX. hFE Type No. I2SA1048 VCEO •c (V) M l PC ImW) VCE ic IV )' ‘ M ) (V) fjT Y P (MIN.) ■c 1 >B ImA) ImA) VCE (MHz), (V) O C/>


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    2SC2458 I2SA1048 2SK365 2SK367 2SK370 2SK371 2SK372 2SC3378 25A1048 PDF

    2SJ108

    Abstract: 2SK370
    Text: TO SH IBA 2SK370 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK370 Unit in mm FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS • Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfs| : |Yfs| = 22ms Typ. (VDS = 10V, VGS = 0, IDSS = 3mA)


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    2SK370 2SJ108 55MAX 2SK370 PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    PDF

    2SC3378

    Abstract: fet 2sK161 2SA1048 2SA1049 2SA1150 2SA1297 2SC2458 2SC2469 2SC2710 2SK184
    Text: L. —3 O n X H CD 2. MINI PACKAGE SERIES > rH H H n 73 m —3 m \ o "O > TRANSISTOR < PC PNP V (mA) (mW) : 2SA1048 50 150 200 70—700/400 2SC2458(l ^2SA1048( l ) 50 150 200 High Voltage 2SC2469 ' 2SA1049 120 100 High Current 2SC2710 Ì2SA1150 30 800 High Current


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    2SC2458 2SA1048 2SC24S8 2SC2469 2SA1049 2SC2710 2SA1150 2SK367 2SK370 2SC3378 fet 2sK161 2SA1297 2SC2458 2SC2469 2SC2710 2SK184 PDF

    2SJ108

    Abstract: 2SK370
    Text: TO SH IB A 2SK370 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK370 Unit in mm FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS Suitable for Use as First Stage for Equalizer and MC Head Amplifiers. High |Yfe| : |Yfs| = 22ms Typ. (VD S=10V , VGS = 0, IDSS = 3mA)


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    2SK370 2SJ108 55MAX. PDF