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    2SK389 Search Results

    2SK389 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3899(0)-ZK-E1-AY Renesas Electronics Corporation Nch Single Power Mosfet 60V 84A 5.3Mohm Mp-25Zk/To-263 Visit Renesas Electronics Corporation
    2SK3899-ZK-E1-AY Renesas Electronics Corporation Nch Single Power Mosfet 60V 84A 5.3Mohm Mp-25Zk/To-263 Visit Renesas Electronics Corporation
    2SK3899-ZK-E1-AZ Renesas Electronics Corporation Nch Single Power Mosfet 60V 84A 5.3Mohm Mp-25Zk/To-263 Visit Renesas Electronics Corporation
    2SK3899(0)-ZK-E1-AZ Renesas Electronics Corporation Nch Single Power Mosfet 60V 84A 5.3Mohm Mp-25Zk/To-263 Visit Renesas Electronics Corporation
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    2SK389 Price and Stock

    Panasonic Electronic Components 2SK3892

    MOSFET N-CH 200V 22A TO220D-A1
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    DigiKey 2SK3892 Bulk
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    Renesas Electronics Corporation 2SK3899(0)-ZK-E1-AZ

    TRANSISTOR
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    Quest Components 2SK3899(0)-ZK-E1-AZ 55,200
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    Renesas Electronics Corporation 2SK3899(01)-ZK-E1-AY

    TRANSISTOR
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    Panduit Corp 2SK389500L

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    Bristol Electronics 2SK389500L 11,460
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    Renesas Electronics Corporation 2SK3899(0)-ZK-E1-AY

    2SK3899K - Nch Single Power Mosfet 60V 84A '
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    Rochester Electronics 2SK3899(0)-ZK-E1-AY 4,000 1
    • 1 $5.12
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    2SK389 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SK389 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK389 Unknown FET Data Book Scan PDF
    2SK389 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK389 Toshiba DUAL FIELD EFFECT TRANSISTOR SILICON MONOLITHIC N CHANNEL JUNCTION TYPE Scan PDF
    2SK389 Toshiba Silicon N channel field effect transistor for low noise audio and differential amplifier applications. Recommended for first differential stages of DC amplifiers Scan PDF
    2SK389 Toshiba Transistors / FETs Scan PDF
    2SK3892 Panasonic FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 22A TO-220D Original PDF
    2SK3899 Kexin N-Channel MOSFET Original PDF
    2SK3899 NEC SWITCHING N-CHANNEL POWER MOS FET Original PDF
    2SK3899 TY Semiconductor N-Channel MOSFET - TO-263 Original PDF
    2SK3899(0)-ZK-E1-AZ Renesas Electronics America Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANSISTOR Original PDF
    2SK3899-ZK NEC SWITCHING N-CHANNEL POWER MOSFET Original PDF
    2SK389BL Toshiba Silicon Monolithic N-Channel Junction Type Dual FET Scan PDF
    2SK389GR Toshiba Silicon Monolithic N-Channel Junction Type Dual FET Scan PDF
    2SK389V Toshiba Silicon Monolithic N-Channel Junction Type Dual FET Scan PDF

    2SK389 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd transistor ISS

    Abstract: 2SK3899 2SK38
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3899 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS on 2 = 6.5 mÙ MAX. (VGS = 4.5 V, ID = 42 A) Low C iss: C iss = 5500 pF TYP. +0.2 2.54-0.2 +0.2


    Original     		PDF 2SK3899 O-263 smd transistor ISS 2SK3899 2SK38

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SK3899 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS on 2 = 6.5 mÙ MAX. (VGS = 4.5 V, ID = 42 A) Low C iss: C iss = 5500 pF TYP. +0.2 2.54-0.2


    Original     		PDF 2SK3899 O-263

    2SK389BL

    Abstract: No abstract text available
    Text: 2SK389BL Transistors Dual N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V) I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)125õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)


    Original     		PDF 2SK389BL

    UNION CARBIDE

    Abstract: No abstract text available
    Text: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET AMPLIFIER FEATURES ULTRA LOW NOISE en = 0.9nV/√Hz typ TIGHT MATCHING IVGS1-2I = 20mV max HIGH BREAKDOWN VOLTAGE BVGSS = 40V max HIGH GAIN Gfs = 20mS (typ) LOW CAPACITANCE 25pF typ IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK389


    Original     		PDF LSK389 2SK389 400mW 25-year-old, UNION CARBIDE

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3892 Silicon N-channel power MOSFET For contactless relay, diving circuit for a solenoid, driving circuit for a motor, control equipment and switching power supply • Package


    Original     		PDF 2002/95/EC) 2SK3892 O-220D-A1

    amelco

    Abstract: LSK389B
    Text: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 0.9nV/√Hz typ TIGHT MATCHING IVGS1-2I = 20mV max HIGH BREAKDOWN VOLTAGE BVGSS = 40V max HIGH GAIN Gfs = 20mS (typ) LOW CAPACITANCE Top View TO-71 25pF typ IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK389


    Original     		PDF LSK389 2SK389 400mW 25-year-old, amelco LSK389B

    2SK3899

    Abstract: 2SK3899-ZK 2SK38 D1717
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3899 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3899 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3899-ZK TO-263 MP-25ZK


    Original     		PDF 2SK3899 2SK3899 2SK3899-ZK O-263 MP-25ZK) O-263) 2SK3899-ZK 2SK38 D1717

    acoustic sensor

    Abstract: 2SK389 LSK389 ultra low idss toshiba jfet dual jfet jfets
    Text: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET Linear Systems replaces discontinued Toshiba 2SK389 with LSK389 The 2SK389 / LSK389 is a monolithic matched dual JFET on a single chip Why use On-Chip Dual JFET instead of 2 single JFETS? Save Cost 2SK389 / LSK389 removes significant cost for test screening time


    Original     		PDF LSK389 2SK389 LSK389 acoustic sensor ultra low idss toshiba jfet dual jfet jfets

    2SK3891

    Abstract: 700v 5A mosfet DC converter 50A 100V 2SK3891-01R mosfet 600V 50A
    Text: 2SK3891-01R N-CHANNEL SILICON POWER MOSFET Outline Drawings mm 200407 FUJI POWER MOSFET Super FAP-G Series Features High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breakdown Applications Switching regulators UPS (Uninterruptible Power Supply)


    Original     		PDF 2SK3891-01R 2SK3891 700v 5A mosfet DC converter 50A 100V 2SK3891-01R mosfet 600V 50A

    Untitled

    Abstract: No abstract text available
    Text: LSK389 ULTRA LOW NOISE DUAL N-CHANNEL J-FET Replace discontinued Toshiba 2SK389 with LSK389 The 2SK389 / LSK389 is a 1nV/√Hz single chip dual JFET Why use monolithic dual JFET instead of 2 single JFETS? 2SK389 / LSK389 removes significant cost for test screening time needed to match IDSS on 2 individual


    Original     		PDF LSK389 2SK389 LSK389

    K3892

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3892 Silicon N-channel power MOSFET For high-speed switching 4.6±0.2 9.9±0.3 Rating Unit Drain-source surrender voltage VDSS 200 V Gate-source surrender voltage VGSS ±30 V Drain current


    Original     		PDF 2002/95/EC) 2SK3892 K3892

    2SK3892

    Abstract: K3892 2sk38
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power MOSFETs 2SK3892 Silicon N-channel power MOSFET For contactless relay, diving circuit for a solenoid, driving circuit for a motor, control equipment and switching power supply • Package


    Original     		PDF 2002/95/EC) 2SK3892 O-220D-A1 2SK3892 K3892 2sk38

    2SK389 equivalent

    Abstract: LSK389 equivalent LSK389B 2sk389 LSK170A LSK389A 2SK389C ultra low igss pA
    Text: LSK389 ULTRA LOW NOISE DUAL N-CHANNEL J-FET Replace discontinued Toshiba 2SK389 with LSK389 The 2SK389 / LSK389 is a 1nV/√Hz single chip dual JFET Why use monolithic dual JFET instead of 2 single JFETS? 2SK389 / LSK389 removes significant cost for test screening time needed to match IDSS on 2 individual


    Original     		PDF LSK389 2SK389 2SK389 equivalent LSK389 equivalent LSK389B LSK170A LSK389A 2SK389C ultra low igss pA

    Untitled

    Abstract: No abstract text available
    Text: 2SK389GR Transistors Dual N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V) I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)125õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)


    Original     		PDF 2SK389GR

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    2SK389

    Abstract: 2SJ109
    Text: TO SH IBA 2SK389 TOSHIBA DUAL FIELD EFFECT TRANSISTOR SILICON MONOLITHIC N CHANNEL JUNCTION TYPE 2SK389 LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS. 1 Chip Dual Type. Recommended for First Differential Stages of DC Amplifiers. Very High |Yfs| : |Yfs| = 20mS Typ.


    OCR Scan     		PDF 2SK389 2SJ109 2SK389 2SJ109

    2SK389 equivalent

    Abstract: 2SK389
    Text: T O SH IB A 2SK389 TOSHIBA DUAL FIELD EFFECT TRANSISTOR SILICON MONOLITHIC N CHANNEL JUNCTION TYPE 2SK389 Unit in mm LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS. 1 Chip Dual Type. Recommended for First Differential Stages of DC Amplifiers. Very High |Yfs| : |Yfs| = 20mS Typ.


    OCR Scan     		PDF 2SK389 2SJ109 2SK389 equivalent 2SK389

    2SK389

    Abstract: 2-10M1A 2SJ109 1G100
    Text: TOSHIBA 2SK389 TOSHIBA DUAL FIELD EFFECT TRANSISTOR SILICON MONOLITHIC N CHANNEL JUNCTION TYPE 2SK389 LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS. 1 Chip Dual Type. Recommended for First Differential Stages of DC Amplifiers. Very High |Yfs| : |Yfs| = 20mS Typ.


    OCR Scan     		PDF 2SK389 2SJ109 2SK389 2-10M1A 2SJ109 1G100

    2SK389

    Abstract: 2SJ109 2-10M1A
    Text: TO SH IB A 2SK389 T O SH IBA D U A L FIELD EFFECT T RA N SIST O R SILICON M O N O LITH IC N C H A N N EL JU N C TIO N TYPE 2SK389 L O W NOISE A U D IO A N D D IFFER EN TIA L A M P L IF IE R APPLICA TIO N S. U n it in mm 1 C h ip D u a l Type. 9.5 + 0 3 Recom m ended fo r F ir s t D iffe re n tia l Stag es of D C A m p lifie rs.


    OCR Scan     		PDF 2SK389 2SJ109 2SK389 2SJ109 2-10M1A

    2SK389 equivalent

    Abstract: 2SK389
    Text: TOSHIBA 2SK389 TOSHIBA DUAL FIELD EFFECT TRANSISTOR SILICON MONOLITHIC N CHANNEL JUNCTION TYPE 2SK389 Unit in mm LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS. 1 Chip Dual Type. Recommended for First Differential Stages of DC Amplifiers. Very High ¡Yfsj : ¡Yfs| = 20mS Typ.


    OCR Scan     		PDF 2SK389 --50V --30V) 2SJ109 2SK389 equivalent 2SK389

    2SK389

    Abstract: 052-DB 2SJ109
    Text: TO SH IB A 2SK389 TOSHIBA DUAL FIELD EFFECT TRANSISTOR SILICON MONOLITHIC N CHANNEL JUNCTION TYPE 2SK389 Unit in mm LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS. 1 Chip Dual Type. Recommended for First Differential Stages of DC Amplifiers. Very High |Yfs| : |Yfs| =20m S Typ.


    OCR Scan     		PDF 2SK389 2SJ109 052-DB

    b1375

    Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
    Text: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39


    OCR Scan     		PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S b1375 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1

    2SK 150A

    Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
    Text: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015


    OCR Scan     		PDF 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2SK 150A mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737