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    2SD2531 Search Results

    2SD2531 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SD2531 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2531 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2531 Toshiba Silicon NPN transistor for power amplifier applications Scan PDF
    2SD2531 Toshiba Silicon NPN Triple Diffused Type Transistor Scan PDF

    2SD2531 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D2531

    Abstract: 2SD2531 D-2531
    Text: 2SD2531 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2531 Power Amplifier Applications Unit: mm • Low collector saturation voltage: VCE sat = 0.5 V (typ.) • High power dissipation: PC = 25 W (Tc = 25°C) (IC = 2.5 A, IB = 0.25 A) Absolute Maximum Ratings (Tc = 25°C)


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    PDF 2SD2531 SC-67 2-10R1A D2531 2SD2531 D-2531

    2sd2531

    Abstract: No abstract text available
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2531 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = 1.0 (Max)@ IC= 2.5A ·High Power Dissipation: PC= 25W@ TC= 25℃ APPLICATIONS ·Designed for power amplifier applications


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    PDF 2SD2531 2sd2531

    d2531

    Abstract: D-2531 2SD2531
    Text: 2SD2531 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2531 Power Amplifier Applications Unit: mm • Low collector saturation voltage: VCE sat = 0.5 V (typ.) • High power dissipation: PC = 25 W (Tc = 25°C) (IC = 2.5 A, IB = 0.25 A) Maximum Ratings (Tc = 25°C)


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    PDF 2SD2531 SC-67oducts d2531 D-2531 2SD2531

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


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    PDF BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943

    S78DM12Q

    Abstract: Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300
    Text: 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m w Power Solution w 上 海 w 众 w 韩 .c kb 授 -s 权 h. 代 co 理 m LED Solution LED TV Power


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    PDF SN431) SUN0550F/D O-220AB-3L O-220F-3L O-220F-4SL DIP-14 DIP-20 DIP-18 S78DM12Q Sf20d400 s78dM12 BA5810 sn7905 SF5A400 transistor AE code PNP smd sf20a300 SF10A300 SF10D300

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


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    PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    transistor

    Abstract: power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220
    Text: Part Number 2SD1160 N 2SD1140 N 2SD1224 N 2SD1508 N 2SD1631 N 2SD1784 Y 2SD2481 N 2SB907 N 2SD1222 N 2SD1412A 2SD2686 * 2SD1658 N 2SD2088 N 2SD2352 N 2SD2461 N 2SB906 N 2SD1221 N 2SB1375 N 2SD2012 N 2SD2462 N 2SB1640 N 2SD2525 N 2SD2353 N 2SB1667 Y 2SB1642 N


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    PDF 2SD1160 2SD1140 2SD1224 2SD1508 2SD1631 2SD1784 2SD2481 2SB907 2SD1222 2SD1412A transistor power transistor npn to-220 PNP POWER TRANSISTOR TO220 transistor PNP damper diode Darlington transistor 2SD2206A power transistor npn darlington transistor TO220

    2sc5088 horizontal transistors

    Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
    Text: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.


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    PDF BCE0016A 3501C-0109 F-93561, 2sc5088 horizontal transistors equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a

    2SD2531

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2531 2SD2531 T O SH IBA TRANSISTO R PO W ER AM PLIFIER APPLICATIO NS SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm r Low Collector Saturation Voltage : VCE = 0.5V Typ. (IC = 2.5A, IB = 0.25A) High Power Dissipation : Pc = 25W(Tc = 25°C) ( s a t )


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    PDF 2SD2531

    Untitled

    Abstract: No abstract text available
    Text: 2SD2531 TOSHIBA TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS • • SILICON NPN TRIPLE DIFFUSED TYPE 2SD2531 Unit in mm 03.2 ± 0.2 10 ± 0-3 Low Collector Saturation Voltage : VCE sat = 0-5V (Typ.) (IC = 2.5A, IB = 0.25A) High Power Dissipation : P q = 25W (Tc = 25°C)


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    PDF 2SD2531

    2SD2531

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2531 2SD2531 T O SH IB A TR A N SIST O R P O W ER A M P LIF IER A PP LIC A TIO N S SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm 10 ±0.3 Low Collector Saturation Voltage : VCE sat = °-5V (TyP-) ^C = 2-5A, IB = 0.25 A) High Power Dissipation : Pn = 25 W (Tc = 25°C)


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    PDF 2SD2531 2SD2531

    2SD2531

    Abstract: No abstract text available
    Text: TO SH IBA 2SD2531 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SD2531 Unit in mm Low Collector Saturation Voltage : VCE sat = °-5V (TyP-) ^C = 2-5A, IB = 0.25 A) High Power Dissipation : Pn = 25 W (Tc = 25°C) ^3.2 ± 0.2


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    PDF 2SD2531 2SD2531

    2sd2531

    Abstract: No abstract text available
    Text: TO SH IBA 2SD2531 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2SD2531 Unit in mm Low Collector Saturation Voltage : VCE sat = °-5V (TyP-) ^C = 2-5A, IB = 0.25 A) High Power Dissipation : Pn = 25 W (Tc = 25°C) o 1.1 ^3.2 ± 0.2


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    PDF 2SD2531 2sd2531

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2531 TOSHIBA TRANSISTOR i SILICON NPN TRIPLE DIFFUSED TYPE < ; n i mm mmr s 3 1 w POWER AMPLIFIER APPLICATIONS U nit in mm 10 + 0.3 , ^ 3 .2 ± 0 .2 2J± 0 2 Low Collector Saturation Voltage : V C E s a t = 0.5V (Typ.) Oc = 2.5A, IB = 0.25A) High Power Dissipation


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    PDF 2SD2531