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    2SD1252A Search Results

    2SD1252A Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SD1252A Panasonic NPN Transistor Original PDF
    2SD1252A Panasonic Silicon NPN triple diffusion planar type Original PDF
    2SD1252A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD1252A Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD1252A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD1252A Unknown Cross Reference Datasheet Scan PDF
    2SD1252A Panasonic Silicon Medium Power Transistors Scan PDF
    2SD1252AP Panasonic Silicon NPN Triple Diffusion Planar Type Power Transistor Original PDF
    2SD1252AQ Panasonic Silicon NPN Triple Diffusion Planar Type Power Transistor Original PDF
    2SD1252AR Panasonic Silicon NPN Triple Diffusion Planar Type Power Transistor Original PDF

    2SD1252A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB0929

    Abstract: 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0929 (2SB929), 2SB0929A (2SB929A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1252, 2SD1252A Unit: mm 6.0±0.2 1.0±0.1 Symbol Rating Unit


    Original     		PDF 2002/95/EC) 2SB0929 2SB929) 2SB0929A 2SB929A) 2SD1252, 2SD1252A 2SB0929 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A

    2SB0929

    Abstract: 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A
    Text: Power Transistors 2SD1252, 2SD1252A Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB0929 2SB929 and 2SB0929A (2SB929A) 1.5±0.1 10.0±0.3 0.8±0.1 2.54±0.3 60 3.4±0.3 6.0±0.3 1.0±0.1 V 80 Emitter to base voltage


    Original     		PDF 2SD1252, 2SD1252A 2SB0929 2SB929) 2SB0929A 2SB929A) 2SD1252 2SB0929 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1252, 2SD1252A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0929, 2SB0929A Unit: mm 1.0±0.1 Parameter Collector-base voltage Emitter open 3.0+0.4 –0.2 ea s ht e v tp is :// it pa fo na llo so win


    Original     		PDF 2SD1252, 2SD1252A 2SB0929, 2SB0929A 2SD1252 2SD1252A

    2SB0929

    Abstract: 2SB0929A 2SD1252 2SD1252A
    Text: Power Transistors 2SD1252, 2SD1252A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0929, 2SB0929A Unit: mm 3.0+0.4 –0.2 0.8±0.1 R = 0.5 R = 0.5 2.54±0.3 1.0±0.1 1.4±0.1 0.4±0.1 5.08±0.5 8.5 (6.0) 1.3 3 Parameter


    Original     		PDF 2SD1252, 2SD1252A 2SB0929, 2SB0929A 2SD1252 2SB0929 2SB0929A 2SD1252 2SD1252A

    2SB0929

    Abstract: 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A
    Text: Power Transistors 2SB0929 2SB929 , 2SB0929A (2SB929A) Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1252, 2SD1252A Unit: mm Rating Unit VCBO −60 V 2 −80 2SB0929A −60 V Collector-emitter voltage 2SB0929 (Base open) 2SB0929A


    Original     		PDF 2SB0929 2SB929) 2SB0929A 2SB929A) 2SD1252, 2SD1252A 2SB0929 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A

    2SB0929

    Abstract: 2SB0929A 2SD1252 2SD1252A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1252, 2SD1252A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB0929, 2SB0929A Unit: mm 6.0±0.2 1.0±0.1 10.0±0.3 1.5±0.1 2 3.0+0.4 –0.2


    Original     		PDF 2002/95/EC) 2SD1252, 2SD1252A 2SB0929, 2SB0929A 2SD1252 2SB0929 2SB0929A 2SD1252 2SD1252A

    2SB929

    Abstract: 2SB929A 2SD1252 2SD1252A
    Text: Power Transistors 2SD1252, 2SD1252A Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB929 and 2SB929A 2.0 0.8±0.1 2.54±0.3 60 3.4±0.3 6.0±0.3 1.0±0.1 Emitter to base voltage VEBO 6 V Peak collector current ICP


    Original     		PDF 2SD1252, 2SD1252A 2SB929 2SB929A 2SD1252 2SD1252 10MHz 2SB929A 2SD1252A

    2SD1252

    Abstract: 2SD1252A
    Text: Transistors SMD Type Silicon NPN Triple Diffusion Junction Type 2SD1252,2SD1252A TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25


    Original     		PDF 2SD1252 2SD1252A O-252 2SD1252 2SD1252A

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SB929

    Abstract: 2SB929A 2SD1252 2SD1252A
    Text: Power Transistors 2SB929, 2SB929A Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 0.8±0.1 2.54±0.3 1 emitter voltage 2SB929A –80 VEBO –5 V Peak collector current ICP –5 A Collector current IC –3 A dissipation Junction temperature Tj Storage temperature


    Original     		PDF 2SB929, 2SB929A 2SB929 2SB929 2SB929A 2SD1252 2SD1252A

    2SB0929

    Abstract: 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A
    Text: Power Transistors 2SB0929, 2SB0929A 2SB929, 2SB929A Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 0.8±0.1 2.54±0.3 1 –60 emitter voltage 2SB0929A –80 VEBO –5 V Peak collector current ICP –5 A Collector current IC –3 A dissipation Junction temperature


    Original     		PDF 2SB0929, 2SB0929A 2SB929, 2SB929A) 2SB0929 2SB0929 2SB0929A 2SB929 2SB929A 2SD1252 2SD1252A

    2SD1039

    Abstract: to-53 BUW64A
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V A (BR)CEO Of) PD Max ON) hre Min fT (Hz) 'CBO t0N r Max Max (A) (8) Max (Ohms) (CE)Mt Toper Max (°C) Package Style 140 175 140 140 140 140 140 140 140 140 J J J J J J J J J J TO-220


    Original     		PDF 2SC1984 2N4233 2SB761A 2SB929A 2SB941A 2SD1252A 2SD1266A 2SD856A BDT31B 2SD1039 to-53 BUW64A

    2SB909

    Abstract: 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SB901 -60 -4A 40W(Tc=25ºC) 150 120 -4 -1A 2SB902 -30 -15 -100 200 125


    Original     		PDF 2SB901 2SB902 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909 2SB910 2SB909 2SB971 2SB978 2sb911 2SB901 2SB917 2SB918 2SB983 2SD1347 2SB902

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SD1252,2SD1252A TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15 0.127 max +0.25 2.65 -0.1 +0.1 0.80-0.1 +0.28 1.50 -0.1


    Original     		PDF 2SD1252 2SD1252A O-252 2SD1252

    2SD1204

    Abstract: 2SD1202 2SD1278 2SD1227 2SD1300 2SD1225 2SD1297 equivalent 2sd1285 2SD1240 2SD1201
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 100W 2SD1201 500 7 10A 150 100 3 10A (Tc=25ºC) 100W 2SD1202


    Original     		PDF 2SD1201 2SD1202 2SD1203 2SD1204 2SD1205 20002SD1205A 2SD1206 2SB894 2SD1207 2SD1208 2SD1204 2SD1202 2SD1278 2SD1227 2SD1300 2SD1225 2SD1297 equivalent 2sd1285 2SD1240 2SD1201

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB929, 2SB929A 2SB929, 2SB929A Silicon PNP Epitaxial Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SD 1252, 2SD1252A Unit : mm 8.7 • Features • High DC current gain hre and good linearity • Low collector-emitter saturation voltage (V c el . u)


    OCR Scan     		PDF 2SB929, 2SB929A 2SD1252A 2SB929 2SB929A

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1252, 2SD1252A 2SD1252, 2SD1252A Silicon NPN Triple-Diffused Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SB929, 2SB929A • Features • H igh D C c u r re n t gain Iiff U n it : 3.7max. 8.7 n t— <1 l.l,max


    OCR Scan     		PDF 2SD1252, 2SD1252A 2SB929, 2SB929A 2SD1252 bR32flS2

    2SB929

    Abstract: 2SB929A 2SD1252 2SD1252A
    Text: Power T ransistors 2SB929, 2SB929A 2SB929, 2SB929A Silicon PNP Epitaxial Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SD1252, 2SD1252A • Features . • High DC current gain lire and good linearity ' • Low collector-emitter saturation voltage ( V Cec« .o )


    OCR Scan     		PDF 2SB929, 2SB929A 2SD1252, 2SD1252A 2SB929 2SB929A 2SD1252 2SD1252A

    2SB929

    Abstract: 2SB929A 2SD1252 2SD1252A
    Text: 2SD1252, 2SD1252A Power Transistors 2S D 1252, 2S D 1252A Silicon N P N T rip le -D iffu s e d P la n a r Type Package Dim ensions Power A m plifier C om plem entary Pair with 2SB929, 2SB929A U n it ! mn 3.7max, • Features 8.7 n • H igh DC c u rre n t gain


    OCR Scan     		PDF 2SD1252, 2SD1252A 2SB929, 2SB929A 2SD1252 2SB929 2SB929A 2SD1252A

    PA8080

    Abstract: 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1250A 2SD1251
    Text: - 240 * mXÊfâ Ta=25*0, *0](âTc=25tC m s S 2SD1245 2SD1246 m H # VCBO VcEO (V) (V) 500 400 PSW 30 PSW 30 PA 2SD1247 fè S ic(DC) Pc Pc* I.CBO, (A) (W) (W) (max) (uA) 40 Ä tt Vc b (V) 100 350 (min) [*EP(ïtypÎÜ] V c E Í s a t ) 'ÍB E ( s a t ) (max)


    OCR Scan     		PDF 2SD1245 2SD1246 2SD1247 2SD1248K 2SD1249 2SD1249A 2SD1250 2SD1259A 2SB937 2SD1260 PA8080 2SD1246 2SD1247 2SD1250A 2SD1251

    2SB927

    Abstract: 2SB930 2SB813 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909M
    Text: - 66 - T a = 2 5 cC , *EÎ]ÎÏTc=25<C m z 2SB903 2SB904 tt £ m m 2SB905 2SB906 m m. VcBO VcEO (V) (V) Ic(DC) (A) Pc Pc* w (W) M ICBO (max) Ä) (u Vro (V) M (min) ft W (max) te Vcp (VÍ (Ta=25T;) Ic /1 e (A) [tEPIitypffi] (max) (V) le (A) (V) ÏB Ó O


    OCR Scan     		PDF 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909M 2SB930 2SD1253A 2SD1254 2SB927 2SB930 2SB813 2SB903 2SB904 2SB905 2SB907 2SB908

    2sb504

    Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
    Text: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St


    OCR Scan     		PDF S029747 SS963& 2sb504 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V

    D1274A

    Abstract: B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398
    Text: Transistors Selection Guide by Packages • SS Mini Type Packages (D1) \ V C E 0 (V) 10 lc (mA) \ pc= i 25 mw 15 20 40 50 150 185 2SC4627 A 2SC5021 -2SA1790 >2SC4626 2SC4655 15 30 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 50 80 2SD2345 (2SA1791 i 2SC4656 2SC4691


    OCR Scan     		PDF 2SC4627 2SC5021 -2SA1790 2SC4626 2SC4655 2SC4809 2SC5295 2SC4808 2SA1806 2SD2345 D1274A B1317 C4714 D1707 b1108 c2258 transistor D2052 transistor transistor b1154 2sD2504 transistor B1398