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    2SC510 TOSHIBA Search Results

    2SC510 TOSHIBA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    2SC510 TOSHIBA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製 品の誤作動や故障により、生命・身体・財産が侵害されることのないように、購入


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    PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    mg75n2ys40

    Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
    Text: 小信号ダイオード SMD ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製 品の誤作動や故障により、生命・身体・財産が侵害されることのないように、購入


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    PDF 050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A

    2SD811 TOSHIBA

    Abstract: 2SC510 2SD2061 2SD877 RY 228 2SD2023 2SD1270 2SD880 2SC2120 2SD867
    Text: * * * * * * i * * * * * * * * * * * * * * * M anuf. a m. X 3E •y-y'ry y-y'ry ■v-yry ■y-yry ■y-yírv yyry € h SANYO 2SD313 2SD313 n jft ^ TOSHIBA 2SC2120 2SD880 2SD880 2SC510 2SC510 2SC510 2SD877 2SD877 2SD877 NEC 2SD795 2SD795 M AL HITACHI 2SC1213


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    PDF 2SD228 2SD234 2SD235 2SC236 2SD237 2SD238 2SD241 2SD242 2SD243 2SD244 2SD811 TOSHIBA 2SC510 2SD2061 2SD877 RY 228 2SD2023 2SD1270 2SD880 2SC2120 2SD867

    2SC510

    Abstract: 2SC5102 2SC510-2SC512 2SC510 X 2SC512
    Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA Sb DE J ^ D ^ S O 56L DISCRETE/OPTO J 7 41 d U D0D7mfl 1 'T‘~ 3 J~ e * 2SC51Ö " i2SC512i SILICON NPN TRIPLE DIFFUSED TYPE (PCT RPOCESS) Unit in nun HIGH FREQUENCY POWER AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS.


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    PDF 2SC51Ö i2SC512i 2SC510) 2SC512) 800mW 2SA510 2SA512. 2SC510 2SC510 2SC5102 2SC510-2SC512 2SC510 X 2SC512

    2SC510

    Abstract: 2SC512 2SA512 2SA51 2SC510 X 2SC510A 2SA510 2SC510-2SC512 2sc510 toshiba
    Text: ~5Í TOSHIBA {DISCRETE/OPTO} 90 97250 TO SHIBA DE 56L <D I S C R E T E / O P T O DDD741A J7^id o 7 2 SC5 1 0 ' i2 S C 5 1 2 i S IL IC O N NPN T R IP L E D IF F U SE D T YPE PCT RPOCESS) Unit in nun HIGH FREQUENCY POWER AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS.


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    PDF DDD741A 2SC510 2SC512 39MAX. 45MAX 2SC510) 2SC512) 800mW 2SA510 2SA512. 2SA512 2SA51 2SC510 X 2SC510A 2SC510-2SC512 2sc510 toshiba

    2sd797

    Abstract: 2SD867 2SD2061 2SD425 2SC496 Y 2SD877 2SC496 2sd667 2SC2497 2SC1398
    Text: - §J £ ft T y p e No. * € Manuf. =& SANYO H 2 TOSHIBA 2 Su 136 Äiis ZSD/SI 2SD 196A Ä ±a *±a *±a 2SD7972SC782 * 2 S D 197 S * 2SD * 2SD 198 * 2 S D 199 $ ' 197A m b NEC 31 HITACHI S ± Ü FUJITSU fâ T MA T S U S H I T A □ — A ROHM 2SD797


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    PDF 2SD196A 2SD197S 2SD197A 2SD797 2SC782 2SD818 2SD867 2SD2061 2SD425 2SC496 Y 2SD877 2SC496 2sd667 2SC2497 2SC1398

    2SC 1207

    Abstract: 2SC1741A 2SC2274 2SC2926 2SC1214 toshiba 2sc1384 2SC1253 2sc1959 2SC1906 2SC1687
    Text: - 108 - m % 2SC 1185 a n 2SC 1188 a SANYO a 2SC 1187 2SC 1189 M £ Manuf. Type No. £ TOSHIBA B « NEC ±L HITACHI Ä ± FUJITSU Ä & T MATSUSHITA = m MITSUBISHI □ — A ROHM 2SC792 2SC2999 2SC2215 2SC1906 m 2SC2216 2SCÌ906 2SC1687 2SC2926 c 2SC2216 2SC1906


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    PDF 2SC1185 2SC1187 2SC1188 2SC1189 2SC1190 2SC1192 2SC1193 2SC1196 2SC792 2SC2999 2SC 1207 2SC1741A 2SC2274 2SC2926 2SC1214 toshiba 2sc1384 2SC1253 2sc1959 2SC1906 2SC1687

    2SC108A

    Abstract: 2SC109A 2SA503 2SC524 2SB678 2SC512 2sc497
    Text: TO-39 PACKAGE S ER IES TOSHIBA 16 TO-39 { D I S CRETE/OPT0> Application •c T vdb No. NPN High Voltage SW 2SC507 High Frequency Amp. 2SC594 High Voltage SW 2SC506 PNP v CEO hF E PC fX T Y P . v CE(sat) M A X . Ta=2E?C *Tc=2d>C V CE •c •c • b (V) (A)


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    PDF 2SC507 2SC594 2SC506 2SC505 2SC504 2SC503 2SC498 2SC109A 2SC108A 2SC497 2SA503 2SC524 2SB678 2SC512

    10M15

    Abstract: 2SC109A 2SC108A 10Q04 2SA504 2SA594 cd 40240 2SC504 2SC505 2SC507
    Text: Powered TO-39 Application 0.75 40-240 45 *5 40-240 200 0.6 300 0.6 60 *6 30-300 2 80 *6 30—240 2 50 0.6 40-240 2 50 0.8 40-240 2 70 0.8 40-240 SW Time TYP. V CE •c f fc1MHz VCB tori tstg tf MHz (V) (A) (pF) (V) (its) (jus) (jus) 1 250 20 10m 2.8 10 0.1


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    PDF To-39 2SC507 2SC594 2SA594 2SC506 20MAX. 2SC497 2SA497 2SC512 2SAS12 10M15 2SC109A 2SC108A 10Q04 2SA504 2SA594 cd 40240 2SC504 2SC505 2SC507

    2SC1634

    Abstract: 2SC510 TM 1298 2SC2258 2SC828 2SC4455 2SC3419 1279S 2SC752G-TM 2SC2204
    Text: 110 - m tt « 2SC 1267 2SC 1271 2SC 1272 2SC 1273 2SC 1274 2SC 1276 2 SC 1277 2 SC 1278 2SC 1278S 2SC 1279S 2SC 1280 2SC 12 80AS 2SC 1280S 2SC 1281 2SC1236 2SC1236 / a s s a a a a a a a a a a * s v h n # 2SC641 K 2SC752( G ) TM 2SC3581 2SC2362K 2SC1515(K)


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    PDF 2SC510 2SC2104 2SC1236 2SC504 2SC4455 2SC1634 2SC510 TM 1298 2SC2258 2SC828 2SC3419 1279S 2SC752G-TM 2SC2204

    2SA5101

    Abstract: 2SA510 2SA510-2SA512 2SA512 2SC510 2SA51 2SC512
    Text: TOSHIBA { DI SC RETE/OPTO} 2 S A 5 1 0 1 2 S A 5 1 2 90 97250 TO SHI BA St. DE I ^ G ^ T E S O 0007224 □ | SILICON PNP EPITAXIAL TYPE PCT PROCESS 3b'C CDISCRETE/OPTO) 07224 INDUSTRIAL APPLICATIONS Unit in mm £ £ 3 9 max. HIGH FREQUENCY AMPLIFIER APPLICATIONS.


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    PDF 2SA5101 2SA512 -10OV 2SA510) 2SA512) 800mW 2SC510 2SC512. 2SA510 2SA510-2SA512 2SA512 2SA51 2SC512

    2SD643

    Abstract: 2SC510 AC63 2SD643 Q QS 100 NPN Transistor
    Text: ^ U D > N P N E S ffii > > tl-^ h 2SD X M J j X 'I V o 7 ^ (G -T R I ft I i ffl TENTATIVE O 5 ^ SILICON NPN TR IP L E D IFFU SE D M ESA TRANSISTOR(G-TR) INDUSTRIAL APPLICATIONS 7 ft High Power Switching Applications h p E = 1 5 0 M in . Unit in mm (I0= 30A)


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    PDF 150Min. TC-19 TB-30 2sd643 300/ie 2SC510 50/is 2SD643 2SC510 AC63 2SD643 Q QS 100 NPN Transistor

    2SC512

    Abstract: 2SC510 2sc5126 2sc5 2SA510 2SC55 2SA512 AI 01234 2SA1943-O 2SC5 2sc510 toshiba
    Text: 5 /U 3 > N P N = « ffi*0 B h 5 > 5 > *5 > PCT75ÍC SILICON NPN TRIPLE DIFFUSED TRANSISTOR (PCT PROCESS) o 'y + y ? m a O o H i g h F r e q u e n c y P ow e r A m p l i f i e r A p p l i c a t i o n s , o H igh V o l t a g e S w i t c h i n g and R e g u l a t o r A p p l i c a t i o n s .


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    PDF PCT75Ã 2SC510 2SC512 800mW 2SA510, 2SA512 2SA510 2SA512 2SC512 2sc5126 2sc5 2SC55 AI 01234 2SA1943-O 2SC5 2sc510 toshiba

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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