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    2SD2061 Price and Stock

    ROHM Semiconductor 2SD2061

    Trans GP BJT NPN 60V 7A 3-Pin (3+Tab) TO-220FP
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    Onlinecomponents.com 2SD2061 1,449
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    ComSIT USA 2SD2061 460
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    ROHM Semiconductor 2SD2061E

    POWER TRANSISTOR (60V, 3A) Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA 2SD2061E 10,500
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    2SD2061 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SD2061 ROHM Power Transistor(120V, 7A) Original PDF
    2SD2061 Various Russian Datasheets Transistor Original PDF
    2SD2061 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SD2061 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SD2061 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SD2061 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SD2061 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SD2061 ROHM TO-220, TO-220FP, TO-220FN, HRT Transistors Scan PDF

    2SD2061 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD2061

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SD2061 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·Excellent DC current gain characteristics ·Wide safe operating area APPLICATIONS ·For low frequency power


    Original     		PDF 2SD2061 O-220Fa O-220Fa) 2SD2061

    2SD2061

    Abstract: No abstract text available
    Text: Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD2061 ・ DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Excellent DC current gain characteristics ・Wide safe operating area APPLICATIONS ・For low frequency power amplifier applications


    Original     		PDF 2SD2061 O-220Fa O-220Fa) 2SD2061

    2SD2061

    Abstract: 60V transistor npn ic2a transistor 2sd2061 2sD2061 transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD2061 TRANSISTOR NPN TO-220 1. BASE FEATURES z Low saturation voltage z Excellent DC current gain characteristice 2. COLLECTOR 3. EMITTER 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF O-220 2SD2061 O-220 2SD2061 60V transistor npn ic2a transistor 2sd2061 2sD2061 transistor

    2SD2061

    Abstract: 2sD2061 transistor transistor 2sd2061 60V transistor npn ic2a
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD2061 TRANSISTOR NPN TO-220F 1. BASE FEATURES z Low saturation voltage z Excellent DC current gain characteristice 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF O-220F 2SD2061 O-220F 2SD2061 2sD2061 transistor transistor 2sd2061 60V transistor npn ic2a

    2SD2061

    Abstract: 2SB1369 transistor 2sd2061 IC vertical monitor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1369 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -180V(Min) ·Low Collector Saturation Voltage: VCE(sat)= -1.0V(Max)@ (IC= -0.5A, IB= -50mA) ·Complement to Type 2SD2061


    Original     		PDF 2SB1369 -180V -50mA) 2SD2061 -10mA; -50mA -200V; 2SD2061 2SB1369 transistor 2sd2061 IC vertical monitor

    2SD2061

    Abstract: transistor 2sd2061 Transistor to 220 power transistor npn to-220 2sD2061 transistor
    Text: 2SD2061 NPN TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 1 Features — — 2 3 Low saturation voltage Excellent DC current gain characteristice MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Paramenter Value Units VCBO Collector-Base Voltage


    Original     		PDF 2SD2061 O-220 O-220 transistor 2sd2061 Transistor to 220 power transistor npn to-220 2sD2061 transistor

    D304

    Abstract: 2SD2061 2SD1957 94L-1016-D304 D301
    Text: Transistors 2SD1957 2SD2061 94L-919–D301 (94L-1016-D304) 315


    Original     		PDF 2SD1957 2SD2061 94L-919 94L-1016-D304) D304 2SD2061 2SD1957 94L-1016-D304 D301

    2sd2061

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD2061 TRANSISTOR NPN TO-220 1. BASE FEATURES z Low saturation voltage z Excellent DC current gain characteristice 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF O-220 2SD2061 O-220 condi50Â 2sd2061

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    2SD2061

    Abstract: 2SB1187 2SB1187 transistor transistor 2sd2061
    Text: h 7 > '/ 7 ^ /Transistors 2SD2061 2 S D 2 0 6 1 h* îè§î :7<>U/”^ npn ^7>v7^ Freq. Power Am p. Triple Diffused Planar N P N S ilicon Transistor ^ JB ^ tiiiil/D im en sio n s Unit: mm 1) V c e (sat) VCE(sat)=0.3V (Typ.) Ic / I b = 2 A /0 .2 A 2) S M â t « » « h FE


    OCR Scan     		PDF 2SD2061 2SB1187 A/02A 2SD2061 2SB1187 2SB1187 transistor transistor 2sd2061

    transistor D304

    Abstract: D304 TRANSISTOR 2sd2061 D304 diode d304
    Text: 2SD1957 2SD2061 Transistors 2SD1957 • F e a tu re s 1 H igh D C current gain. 1 6 0 — 500) 2 ) Low VcE(sat). (Typ. 0 .2 V at Ic /Ib = 3 / 0 .3 A ) 3 ) P c=»30W . (T c — 2 5 'C ) 4 ) W ide S O A (safe operating area). 5 ) Built-in dam p e r diode.


    OCR Scan     		PDF 2SD1957 2SD2061 2SD1957 T0220FP 100ms 94L-1016-D304) transistor D304 D304 TRANSISTOR 2sd2061 D304 diode d304

    2SD2061

    Abstract: 2SD880 2SC782 2SD867 2SD877 2SD797 2S0880 2SC782 TOSHIBA 2Sd 123 tl 2SC783
    Text: - m % € tt Manuf. h a m SANYO TOSHIBA m NEC a ti HITACHI * ± FUJITSU a fâ T MA T S U S H I T A £ MITSUBISHI E. □ — A ROHM ¿ou i¿u vn; S ÎL ¿dUd¿0 2SCÍ338 2SD2081 * 2SD 121 H 2SD525 2SC1398 2SD2061 * 2SD 122 0 ÍL a £ 2SD526 2SD1266A 2SD2061


    OCR Scan     		PDF 2SD121 2SD122 2SD123 2SD124 2SC1398 2SD1266A 2SD1264 2SD525 2SD526 2SD2081 2SD2061 2SD880 2SC782 2SD867 2SD877 2SD797 2S0880 2SC782 TOSHIBA 2Sd 123 tl 2SC783

    Untitled

    Abstract: No abstract text available
    Text: 2SD1957 2SD2061 Transistors Power Transistor 120V, 7A 2SD1957 1) ^Absolute maximum ratings (T a = 2 5 ‘C ) H ig h D C c u rre n t g a in . (1 6 0 ~ -5 0 0 ) 3) S ym bol L im its U n it C o lle c to r-b a s e v o lta q e V cbo 120 V C o lle c to r-e m ltte r v o lta g e


    OCR Scan     		PDF 2SD1957 2SD2061 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP. 7020c

    nec 2sc3157

    Abstract: 2SD999 2SD1296 2SD1317 2SD1406 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678
    Text: - 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SO 2SD 2SD 1669 y 1673 1676 — ' 1677 1678 1680 1682 ^ 1683 " 1684 •* 1685 1686 □ — A = * = = n n M. 2 TOSHIBA B m NEC ±L HITACHI 2SD1622 2SC2883 2SD1406 2SC3299 2SD1412 2SD1435K 2SD136S 2SD1662 fó T -E m 2SC3419


    OCR Scan     		PDF 2SD1660 2SD1198A 2SD1198A 2SD1622 2SD1631 2SC2883 2SD1406 2SC3299 2SD1412 2SD1296 nec 2sc3157 2SD999 2SD1317 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678

    2SC1565

    Abstract: 2sD1392 2SC3469 2SD1431 2SC495 2SC2824 2SD1388 2SD600 2SD1876 2SD1499
    Text: - M € T y p e No. tt it 2SD 1377K eh ft 2SD 1377 - 2SD 13 7 8 □— A 2SD 1 379 € Manuf. m h SANYO 2 TOSHIBA 2SC1212A 2SD549 2SD1520L/S 2SC2877 2SD 1381 - □ —A 2SD600 2SC2824 2SD 1382 — □ —A 2SD600 2SC2824 2SD 1383 s. □ —A □ —A 2SD1207


    OCR Scan     		PDF 2SD1196 2SD633 2SD1634 2SD2024 1377K 2SD1024 2SD600 2SC495 2SC1212A 2SD946 2SC1565 2sD1392 2SC3469 2SD1431 2SC495 2SC2824 2SD1388 2SD1876 2SD1499

    2SC3558

    Abstract: 2SD1431 2SD1209 2SD2061 2SC2021 2SD1407 2sd 1507 2SD1488 k 1487 2SD2532
    Text: - 242 - % it Type No. 2SD 1477 2SD 1478 ^ 2SD 1479 4 2SD 1480 *• 2SD 1481 2SD 1482 2SD 1483 ¿ r 2SD 1484 r 2SD 1485 ^ 2SD I486 2SD 1487 f 2S0 1488 * 2SD 1489 2SD 14902SD 1491 , 2SD 1492 2SD 1493 2SD 1494 ^ 2SD 1495 2SD 1496 " 2SD 1497 ' 2SD 2SD 2SD 2SD


    OCR Scan     		PDF 2SC3331 2SC2021 2SD1851 2SD2532 2SD1209 2SD1383K 2SD1400 2SD1429 2SD1060 2SC3540 2SC3558 2SD1431 2SD2061 2SC2021 2SD1407 2sd 1507 2SD1488 k 1487 2SD2532

    2SD424

    Abstract: 2SD424 TOSHIBA 2SC2285A-KA TL 1084 2SC2993 2sc790 2sc400 2SC2762 2SC2926 2SD2023
    Text: - 059 ^ 1060 1061 , 10 62 1066 1067 1068 1070 1071 1073 1074 / 1075 ^ 1076 1077 1077A 1079 1080 1081 1082 1083 1084 1085 1088 _ 1089 / 1095 10961097 1098_' 1098A 1099 1100 SANYO TOSHIBA *±a 1 NEC tL B HITACHI Ä ± ifi FUJITSU tö T MATSUSHITA = m MITSUBISHI


    OCR Scan     		PDF 2SC3140 2SC3141 2SC1755 2SC515A 2SC2085 2SD314 2SD526 2SC2516 2SD1135 2SD1266A 2SD424 2SD424 TOSHIBA 2SC2285A-KA TL 1084 2SC2993 2sc790 2sc400 2SC2762 2SC2926 2SD2023

    2SB1335A

    Abstract: 2SD2037 2SD2033 2SD2061 28c43 2sb1357 2SB1359 2sd2041 2SD2096 2SD1856
    Text: BSE D ROHM CORP Tr T ä S a n T Q O O S TQ Ì 7 Transistors 11 GaAs Dual-Gate MES FETs Type 3SK 212 Function Absolute Maximum Ratings Ta=25°C Dimensions (Unit: mm) Electrical Characteristics (Ta=25°C) Vos(V) lo(mA) PD(mW) Tch(°C) NF(dB) PG(dB) f(MHz)


    OCR Scan     		PDF 3SK212 O-220, O-220FP, 2SD1562 2SB1085 2SD1763 2SB1186 2SD2033 2SB1353 2SD1562A 2SB1335A 2SD2037 2SD2061 28c43 2sb1357 2SB1359 2sd2041 2SD2096 2SD1856

    RTIP144C

    Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
    Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.


    OCR Scan     		PDF 2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C

    SB1335A

    Abstract: 2SD2061 2sd2033a 2SB1496 2SB1342 transistor 2sD2091 2SD2394 2SB1370 2SC4354 2SD2041
    Text: Transistors " 7aaa^ 0DD7^ bD*" RH" TO-220 •T0-220FP •TO-220FN •HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. T0-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.


    OCR Scan     		PDF O-220 T0-220FP O-220FN O-220FP T0-220 O-220FN SB1335A 2SD2061 2sd2033a 2SB1496 2SB1342 transistor 2sD2091 2SD2394 2SB1370 2SC4354 2SD2041

    B1335A

    Abstract: D2033A D1855A D2037 B1186A 2SC457 2sb1335a d2038 B 1186a B1085A
    Text: 1 rarisiston, ¡ m m • Power Transistors • TQ-220, TO-22QFP, HRT Types Vctc C O LLE CTOR TO EMITTER VOLTAGE V 60 50 T 100 120 200 160 300 0 1 400 2SC4505 PSD 1562 15 ■ 2S D 1562A 2SB 1085 2S B 1085A 2S D 1763 | 2SD 1763A 2SB 1186 | 2SB 1186A 2SD 2033


    OCR Scan     		PDF TQ-220, O-22QFP, 2SC4505 SDp901' 2SC4354 2SD2061 2SB1496 2SB1334" 2SC457 2SA1634 B1335A D2033A D1855A D2037 B1186A 2sb1335a d2038 B 1186a B1085A

    2SD2061

    Abstract: b1370 2SB1370
    Text: h -7 > y 7. £ /Transistors 2SB1370 2S B 1370 I e 2 * y 7 J l ? I/ - 1 M PNP y <J □ > h y > y X 2 Epitaxial Planar P N P S ilicon Transistor Freq. Power Am p. • 0 / D im e n s io n s U n it : mm 1) V c E is a t) * ''' '- '» VCE(sal) = — 0.55V(Typ.)


    OCR Scan     		PDF 2SB1370 2SD2061 Ma60V 2SB1370 b1370

    2sd2061

    Abstract: No abstract text available
    Text: 40E ROHM CO L T ]> 7020^=1 » 0Q0b037 h "7 > v 7> $ /'Tran sistors IRHM 7 2SD 2061 7 ^ 3 3 -0 9 I S 1 “ • NP N h - 7 > v X ^ • ttft V^JViV^I'T Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • Wfé'ÎîÉISI/Dimensions Unit: mm 1) VcE (sat)


    OCR Scan     		PDF 0Q0b037 O-220FP 2SD2061 HU-72-I 2sd2061