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    2SC507 Search Results

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    2SC507 Price and Stock

    Sanken Electric Co Ltd 2SC5071

    TRANS NPN 400V 12A TO3P
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    Shindengen Electronic Manufacturing Co Ltd MV1012SC-5072

    Switching Controllers LED Driver Power IC MV series
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    Mouser Electronics MV1012SC-5072
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    Shindengen Electronic Manufacturing Co Ltd MV1002SC-5072

    LED Lighting Drivers LED Driver IC
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    Mouser Electronics MV1002SC-5072
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    2SC507 Datasheets (53)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC507 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC507 Micro Electronics Semiconductor Device Data Book Scan PDF
    2SC507 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC507 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC507 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC507 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC507 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC507 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC507 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC507 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC507 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC507 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC507 Unknown Cross Reference Datasheet Scan PDF
    2SC507 Toshiba Japanese Transistor Data Book Scan PDF
    2SC5070 Sanyo Semiconductor High-gain, low-frequency general-purpose amplifier Original PDF
    2SC5070 Unknown Silicon NPN Transistor Scan PDF
    2SC5070 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC5070 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5071 Sanken Electric Silicon NPN Transistor Original PDF
    2SC5071 Sanken Electric Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose) Original PDF

    2SC507 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC5071

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SC5071 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage ・High speed switching APPLICATIONS ・For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1


    Original     		PDF 2SC5071 2SC5071

    C5075

    Abstract: 2SC5075 equivalent of transistor c5075 024 marking code
    Text: 2SC5075 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5075 Industrial Applications Switching Regulator and High-Voltage Switching Applications Unit: mm High-Speed DC-DC Converter Applications • High-speed switching: tr = 1.0 µs max , tf = 1.0 µs (max)


    Original     		PDF 2SC5075 C5075 2SC5075 equivalent of transistor c5075 024 marking code

    c5076

    Abstract: 2SC5076 IC404 2SA1905
    Text: 2SC5076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC5076 High-Current Switching Applications. • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High-speed switching: tstg = 1.0 µs (typ.) • Complementary to 2SA1905


    Original     		PDF 2SC5076 2SA1905 c5076 2SC5076 IC404 2SA1905

    Hitachi DSA002756

    Abstract: No abstract text available
    Text: 2SC5079 Silicon NPN Epitaxial ADE-208-222 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 12 GHz Typ • High gain, low noise figure PG = 17 dB Typ, NF = 1.6 dB Typ at f = 900 MHz Outline 2SC5079 Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2SC5079 ADE-208-222 Hitachi DSA002756

    if amplifire

    Abstract: 2SC5079
    Text: 2SC5079 Silicon NPN Epitaxial Application VHF & UHF wide band amplifire MPAK–4 Features 2 • High gain bandwidth product fT = 12 GHz typ • High gain, low noise figure PG = 17 dB typ, NF = 1.6 dB typ at f = 900 MHz 3 1 4 1. Collector 2. Emitter 3. Base


    Original     		PDF 2SC5079 2SC5079 if amplifire

    2SC5070

    Abstract: EN4473 4473-3
    Text: Ordering number:EN4473 NPN Epitaxial Planar Silicon Transistor 2SC5070 Low-Frequency General-Purpose Amplifier, Driver Applications Features Package Dimensions unit:mm 2084A [2SC5070] 1.9 10.5 4.5 2.6 1.4 1.2 1.0 8.5 • High current capacity. · Adoption of MBIT process.


    Original     		PDF EN4473 2SC5070 2SC5070] 2SC5070 EN4473 4473-3

    2SC5071

    Abstract: No abstract text available
    Text: 2SC5071 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor 100max µA V IEBO VEB=10V 100max µA V VCEO 400 10 V(BR)CEO IC=25mA 400min 12(Pulse24) A hFE VCE=4V, IC=7A 10 to 30 IB 4 A VCE(sat) IC=7A, IB=1.4A 0.5max


    Original     		PDF 2SC5071 MT-100 100max 400min 10typ 105typ 100mA 200mA 2SC5071

    220E

    Abstract: 2SC5077 2SC5077A
    Text: Power Transistors 2SC5077, 2SC5077A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching M Di ain sc te on na tin nc ue e/ d Unit: mm • Features ■ Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SC5077


    Original     		PDF 2SC5077, 2SC5077A 2SC5077 220E 2SC5077 2SC5077A

    A1905

    Abstract: TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1905 2SC5076
    Text: 2SA1905 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1905 High-Current Switching Applications. Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) • High speed switching time: tstg = 1.0 µs (typ.) • Complementary to 2SC5076


    Original     		PDF 2SA1905 2SC5076 A1905 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1905 2SC5076

    2SC5076

    Abstract: 2SA1905 C5076
    Text: 2SC5076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC5076 High-Current Switching Applications. • Unit: mm Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High-speed switching: tstg = 1.0 s (typ.) • Complementary to 2SA1905


    Original     		PDF 2SC5076 2SA1905 2SC5076 2SA1905 C5076

    2SC5078

    Abstract: No abstract text available
    Text: 2SC5078 Silicon NPN Epitaxial Application VHF & UHF wide band amplifire MPAK–4 Features 2 • High gain bandwidth product fT = 12 GHz typ • High gain, low noise figure PG = 17 dB typ, NF = 1.6 dB typ at f = 900 MHz 3 1 4 1. Collector 2. Emitter 3. Base


    Original     		PDF 2SC5078 2SC5078

    C5075

    Abstract: No abstract text available
    Text: 2SC5075 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5075 Industrial Applications Switching Regulator and High-Voltage Switching Applications Unit: mm High-Speed DC-DC Converter Applications • High-speed switching: tr = 1.0 µs max , tf = 1.0 µs (max)


    Original     		PDF 2SC5075 C5075

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TY PE PCT PRO CESS HIGH CURRENT SW ITCH IN G APPLICATIONS. U n it in mm Low Collector Saturation Voltage : VCE (sat)= -0.4V (Max.) (Ic = -3 A , I b = - 0.15A) High Speed Switching Time : tgtg=1.0/iS (Typ.) Complementary to 2SC5076 in nr


    OCR Scan     		PDF 2SC5076 --10mA,

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SC5075 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5075 SW ITCHING REGULATOR A N D HIGH VOLTAGE SW ITCHING Unit in mm APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATIONS • High Speed Switching : tr=1.0/<s Max. , tf=1.0,«s (Max.)


    OCR Scan     		PDF 2SC5075

    2SK2752

    Abstract: 2sk1326 3SK234 2SK431 3SK238 3SK229 3SK197 2SK1479 1535M 2SK190
    Text: SMALL SIGNAL TRANSISTOR •High frequency amplifier Package code Type No. CMPAK 2SC4903 2SC4906 2SC4965 2SC4967 2SC5051 CMPAK-4 2SC4994 2SC4995 2SC5079 2SC5081 MPAK 2SC2619 2SC2620 2SC2732 2SCZ733 2SC2734 2SC2735 2SC2736 2SC2776 2SC3127 2SC3513 2SC3793 2SC3867


    OCR Scan     		PDF 2SC46 2SK1070 2SK1326 2SK1479 2SK2752* 2SK2752 3SK234 2SK431 3SK238 3SK229 3SK197 1535M 2SK190

    2SC5075

    Abstract: No abstract text available
    Text: TO SH IBA 2SC5075 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5075 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS Unit in mm HIGH SPEED DC-DC CONVERTER APPLICATIONS • • 8.0 ± 0.2 High Speed Switching : tr=1.0/^s Max. , tf^l.O/^s (Max.)


    OCR Scan     		PDF 2SC5075

    IMX5T108

    Abstract: DTC144EN 4AE12 MP5C02 2SB1043 ICP-S2.3TN dta115ef DTA144TSATP DTC124EVA mmst8598t146
    Text: Transistors •Maintenance product list Maintenance model Alternate model Maintenance model Alternate model 2SA1543M 2SA933ASTP 2SC5040K 2SC2412KT146 2SA1549 2SA830STP 2SC5072 2SC4617TL 2SA1554 2SA821STP 2SD1469M 2SD1865TV2 2SA1809 2SA1776TV2 2SD1778 2SD1855


    OCR Scan     		PDF 2SA1543M 2SA1549 2SA1554 2SA1809 2SA1861 2SA1886 2SA806 2SA825S 2SB1008 2SB1033 IMX5T108 DTC144EN 4AE12 MP5C02 2SB1043 ICP-S2.3TN dta115ef DTA144TSATP DTC124EVA mmst8598t146

    2SC5075

    Abstract: No abstract text available
    Text: 2SC5075 TOSHIBA 2SC5075 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING Unit in mm APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATIONS • 8.0 ± 0.2 High Speed Switching : tr=1.0/^s Max. , tf=1.0/^s (Max.)


    OCR Scan     		PDF 2SC5075 100ms 2SC5075

    2SA1905

    Abstract: 2SC5076
    Text: TO SH IBA 2SC5076 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5076 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS • • • Low Collector - Saturation Voltaere 0 : Vnxr \OCOj/ = 0.4V - - - (Max.) V ✓ (at Ic = 3A) High Speed Switching Time


    OCR Scan     		PDF 2SC5076 2SA1905

    5078 marking

    Abstract: No abstract text available
    Text: HITACHI 2SC5078-Silicon NPN Epitaxial Application VHF & UHF wide band amplifire MPAK-4 Features • High gain bandwidth product f j = 12 GHz typ • High gain, low noise figure PG = 17 dB typ, NF = 1.6 dB typ at f = 900 MHz ^ 4 Table 1 Absolute Maximum Ratings Ta = 25°C


    OCR Scan     		PDF 2SC5078----Silicon 2SC5078 5078 marking

    H914

    Abstract: No abstract text available
    Text: HITACHI 2SC5079 Silicon NPN Epitaxial Application VHF & UHF wide band amplifire M P A K -4 Features • High gain bandwidth product fT = 12 GHz typ • High gain, low noise figure PG = 17 dB typ, NF = 1.6 dB typ at f = 900 M Hz ' 4 Table 1 Absolute Maximum Ratings


    OCR Scan     		PDF 2SC5079 H914

    Untitled

    Abstract: No abstract text available
    Text: 2SC5079 S ilicon N P N Epitaxial HITACHI Application V H F / UHF wide band am plifier Features • High gain bandwidth product • High gain, low noise figure fT = 12 GHz Typ PG = 17 dB Typ, NF = 1.6 dB Typ at f = 900 M H z Outline CMPAK-4 1. 2. 3. 4. 792


    OCR Scan     		PDF 2SC5079 ADE-208-222 2SC5078.

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA 2SC5076 TO SH IBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5076 HIGH CURRENT SWITCHING APPLICATIONS • U n it in mm Low C ollector S atu ra tio n V o ltage : V ^ e ( s a .t ) = 0-4V (M ax.) (a t I C = 3A ) • H ig h Speed S w itch in g Tim e


    OCR Scan     		PDF 2SC5076 2SA1905

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5076 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS i <;r * n i g HIGH CURRENT SWITCHING APPLICATIONS U nit in mm 8.0 ± 0.2 • Low Collector Saturation Voltage : V q e ( s a t ) “ 0.4V (Max.) (at I c = 3A) • High Speed Switching Time


    OCR Scan     		PDF 2SC5076 2SA1905