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    2SC524 Search Results

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    2SC524 Price and Stock

    Rochester Electronics LLC 2SC5245-4-TL-E

    BIP NPN 30MA 10V FT=8G
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    DigiKey 2SC5245-4-TL-E Bulk 12,000 1,567
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    onsemi 2SC5242OTU

    TRANS NPN 250V 17A TO3P
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    DigiKey 2SC5242OTU Tube 1,328 1
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    Avnet Americas 2SC5242OTU Bulk 10 Weeks, 5 Days 1
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    2SC5242OTU Tube 9 Weeks 450
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    Mouser Electronics 2SC5242OTU 3,955
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    Verical 2SC5242OTU 357 4
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    Arrow Electronics 2SC5242OTU 357 9 Weeks 1
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    Rochester Electronics 2SC5242OTU 300 1
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    Flip Electronics 2SC5242OTU 900
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    New Advantage Corporation 2SC5242OTU 290 1
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    Toshiba America Electronic Components 2SC5242-O(Q)

    TRANS NPN 230V 15A TO3P
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    DigiKey 2SC5242-O(Q) Tray 333 1
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    Verical 2SC5242-O(Q) 1,080 43
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    2SC5242-O(Q) 900 43
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    onsemi 2SC5242RTU

    TRANS NPN 250V 17A TO3P
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    Rochester Electronics 2SC5242RTU 1,350 1
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    onsemi 2SC5245A-4-TL-E

    RF TRANS NPN 10V 8GHZ 3MCP
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    DigiKey 2SC5245A-4-TL-E Digi-Reel 1
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    2SC524 Datasheets (78)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC524 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC524 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC524 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC524 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC524 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC524 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC524 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC524 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC524 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC524 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC524 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC524 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC524 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC524 Unknown Cross Reference Datasheet Scan PDF
    2SC524 Toshiba Silicon NPN Triple Diffused Transistors Scan PDF
    2SC524 Toshiba Japanese Transistor Data Book Scan PDF
    2SC5240 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SC5240 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5241 Shindengen Electric Switching Power Transistor Original PDF
    2SC5241 Shindengen Electric Switching Power Transistor Original PDF

    2SC524 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Toshiba transistor A1962

    Abstract: a1962 transistor a1962 TOSHIBA A1962 a1962 TOSHIBA 2SA1962 TOSHIBA 2SA1962 2SC5242
    Text: 2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.


    Original
    PDF 2SA1962 2SC5242 Toshiba transistor A1962 a1962 transistor a1962 TOSHIBA A1962 a1962 TOSHIBA 2SA1962 TOSHIBA 2SA1962 2SC5242

    j4313

    Abstract: j4313-o c5242 2sc5200 amplifier circuit
    Text: 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A High Power Dissipation : 130watts High Frequency : 30MHz.


    Original
    PDF 2SC5242/FJA4313 130watts 30MHz. 2SA1962/FJA4213. --TO264 2SC5200/FJL4315 --TO220 FJP5200 --TO220F j4313 j4313-o c5242 2sc5200 amplifier circuit

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SC5244, 2SC5244A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm Parameter TC=25˚C Symbol Collector to 2SC5244 base voltage 2SC5244A Collector to 2SC5244 emitter voltage 2SC5244A Ratings 1500 VCBO 1600


    Original
    PDF 2SC5244, 2SC5244A 2SC5244 2SC5244A

    ZO 109

    Abstract: zo 103 ma 2SC5247 transistor ECG 332 Hitachi DSA00398
    Text: 2SC5247 Silicon NPN Epitaxial ADE-208-281 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz typ • High gain, low noise figure PG = 17 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter


    Original
    PDF 2SC5247 ADE-208-281 ZO 109 zo 103 ma 2SC5247 transistor ECG 332 Hitachi DSA00398

    A1074

    Abstract: CE 2711 ITR07991 2SC5245A ITR07984 ITR07986 ITR07987 ITR07988 ITR07990
    Text: 2SC5245A 注文コード No. N A 1 0 7 4 三洋半導体データシート N NPN エピタキシァルプレーナ型シリコントランジスタ 2SC5245A UHF ~ S バンド低雑音増幅 , 発振用 特長 ・低雑音である:NF=0.9dB typ(f=1GHz)


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    PDF 2SC5245A S21e2 2SC5245A A1074-5/6 A1074-6/6 A1074 CE 2711 ITR07991 ITR07984 ITR07986 ITR07987 ITR07988 ITR07990

    2SC5244

    Abstract: 2SC5244A
    Text: Power Transistors 2SC5244, 2SC5244A Silicon NPN triple diffusion mesa type For horizontal deflection output M Di ain sc te on na tin nc ue e/ d Unit: mm φ 3.3±0.2 5.0±0.3 3.0 Parameter Collector to 2SC5244 base voltage 2SC5244A Collector to 2SC5244 VCBO


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    PDF 2SC5244, 2SC5244A 2SC5244 2SC5244 2SC5244A

    transistor a1962

    Abstract: Toshiba transistor A1962 A1962 2SA1962 TOSHIBA 2SA1962 transistor 2sc5242 a1962 TOSHIBA
    Text: 2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications • Unit: mm High breakdown voltage: V CEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.


    Original
    PDF 2SA1962 2SC5242 2-16C1A transistor a1962 Toshiba transistor A1962 A1962 2SA1962 TOSHIBA 2SA1962 transistor 2sc5242 a1962 TOSHIBA

    c5242

    Abstract: C5242 TOSHIBA transistor c5242 TOSHIBA c5242
    Text: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications • Unit: mm High Collector breakdown voltage: V CEO = 230 V min • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage


    Original
    PDF 2SC5242 2SA1962 2-16C1A c5242 C5242 TOSHIBA transistor c5242 TOSHIBA c5242

    C5242 TOSHIBA

    Abstract: C5242 transistor c5242 TOSHIBA C5242 Toshiba transistor c5242 2sc5242 transistor
    Text: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications Unit: mm • High Collector breakdown voltage: VCEO = 230 V min • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage


    Original
    PDF 2SC5242 2SA1962 2-16C1A C5242 TOSHIBA C5242 transistor c5242 TOSHIBA C5242 Toshiba transistor c5242 2sc5242 transistor

    j4313-o

    Abstract: NPN Transistor 2sc5242 J4313 c5242o J4313R J4313O c5242 C5242-O 2sc5242 transistor 2SC5242RTU
    Text: 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A High Power Dissipation : 130watts High Frequency : 30MHz.


    Original
    PDF 2SC5242/FJA4313 130watts 30MHz. 2SA1962/FJA4213. --TO264 2SC5200/FJL4315 --TO220 FJP5200 --TO220F FJPF5200 j4313-o NPN Transistor 2sc5242 J4313 c5242o J4313R J4313O c5242 C5242-O 2sc5242 transistor 2SC5242RTU

    Untitled

    Abstract: No abstract text available
    Text: 2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm • High breakdown voltage: VCEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.


    Original
    PDF 2SA1962 2SC5242

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1126A FH105A RF Transistor 10V, 30mA, fT=8GHz, NPN Dual MCP6 http://onsemi.com Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly The FH105A is formed with two chips, being equivalent to the 2SC5245A, placed in one package


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    PDF ENA1126A FH105A FH105A 2SC5245A, A1126-8/8

    Untitled

    Abstract: No abstract text available
    Text: 2SC5242 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5242 Power Amplifier Applications • Unit: mm High Collector breakdown voltage: VCEO = 230 V min • Complementary to 2SA1962 • Suitable fro use in 80-W high fidelity audio amplifier’s output stage


    Original
    PDF 2SC5242 2SA1962

    2SC5241

    Abstract: 2SC52 416W
    Text: Inchange Semiconductor Product Specification 2SC5241 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·High voltage,high speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base


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    PDF 2SC5241 O-220F O-220F) 2SC5241 2SC52 416W

    Untitled

    Abstract: No abstract text available
    Text: 2SC5245A Ordering number : ENA1074 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5245A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • Low-noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). High gain


    Original
    PDF ENA1074 2SC5245A S21e2 A1074-6/6

    A1074

    Abstract: IM 383 IC 2SC5245A SANYO DC 303 ITR07984 ITR07986 ITR07987 ITR07990
    Text: 2SC5245A Ordering number : ENA1074 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5245A UHF to S-Band Low-Noise Amplifier OSC Applications Features • • • • Low-noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). High gain


    Original
    PDF 2SC5245A ENA1074 S21e2 A1074-6/6 A1074 IM 383 IC 2SC5245A SANYO DC 303 ITR07984 ITR07986 ITR07987 ITR07990

    Toshiba transistor A1962

    Abstract: No abstract text available
    Text: 2SA1962 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications Unit: mm • High breakdown voltage: V CEO = −230 V min • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage.


    Original
    PDF 2SA1962 2SC5242 Toshiba transistor A1962

    ZO 109

    Abstract: zo 107 2SC5247 Hitachi DSA0014
    Text: 2SC5247 Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz typ. • High gain, low noise figure PG = 17 dB typ., NF = 1.2 dB typ. at f = 900 MHz 3 1 2 1. Emitter 2. Base 3. Collector


    Original
    PDF 2SC5247 ZO 109 zo 107 2SC5247 Hitachi DSA0014

    2SC5241

    Abstract: transistor 2SC5241
    Text: SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC5241 Case : FTO-220 Unit : mm 5A NPN RATINGS œAbsolute Maximum Ratings Item Storage Temperature Junction Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage


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    PDF 2SC5241 FTO-220 2SC5241 transistor 2SC5241

    2SC5242

    Abstract: No abstract text available
    Text: 2SC5242 SILICON NPN TRIPLE DIFFUSED TYPE U nit in mm POWER AM PLIFIER APPLICATIONS. 15.9MAX. • • • — High Collector Breakdown Voltage : V c g o = 230V Min. Complementary to 2SA1962 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage.


    OCR Scan
    PDF 2SC5242 2SA1962 2-16C1A 2SC5242

    2SA1962

    Abstract: 2SC5242
    Text: AOK Product Specification AOK Semiconductor 2SA1962 S ilicon PNP Power Transistors DESCRIPTION • With TO -3P l package • Complement to type 2SC5242 • High collector voltage: VCEo=-230V(Min) APPLICATIONS • Power amplifier applications • Recommend for 80W high fidelity audio


    OCR Scan
    PDF 2SA1962 2SC5242 -230V 2SC5242

    transistor a1962

    Abstract: a1962 SA1962 2SA19 2SA1962 2SC5242
    Text: 2SA1962 TO SHIBA 2 S A 1 962 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 0 3 .2 ± 0 .2 1 5.9 M AX. • • • High Collector Voltage : VCEO——230V Min. Complementary to 2SC5242 Recommend for 80W High Fidelity Audio Frequency Amplifier


    OCR Scan
    PDF 2SA1962 VCEO----230V 2SC5242 2-16C1A --230V, transistor a1962 a1962 SA1962 2SA19 2SA1962

    Untitled

    Abstract: No abstract text available
    Text: 2SA1964 2SC5248 Transistors I High-voltage Switching Audio output amplifier transistor, Stabilized power supply transistor 2SA1964 • F e a tu r e s 1) 2} 3) 4) 5) • A b s o lu te maximum ratings (Ta=25'C) Flat D C current g a in characteristics. H igh breakdow n voltage. (BVceo5 — 160V)


    OCR Scan
    PDF 2SA1964 2SC5248 2SA1964 150MHz> SPEC-C315)

    Untitled

    Abstract: No abstract text available
    Text: 2SC5247 Silicon NPN Epitaxial HITACHI Application V H F / U H F wide band am plifier Features • H igh gain bandwidth product fT = 13.5 G H z typ • High gain, low noise figure PG = 17 dB typ, N F = 1.2 dB typ at f = 900 M H z Outline SM PAK 1. Emitter 2. Base


    OCR Scan
    PDF 2SC5247 ADE-208-281 rec08