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    Toshiba America Electronic Components 2SC4685

    5A, 20V, NPN, SI, POWER TRANSISTOR
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    2SC4685 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SC4685 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-126(IS); Number Of Pins: 3; Viewing Angle: taping only; Publication Class: High Frequency Switching Power Transistor Original PDF
    2SC4685 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC4685 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC4685 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SC4685 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SC4685 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC4685 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC4685 Toshiba Silicon NPN transistor for strobe flash applications and medium power amplifier applications Scan PDF
    2SC4685 Toshiba TRANSISTOR SILICON NPN EPITAXIAL TYPE Scan PDF

    2SC4685 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SC4685 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4685 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm • High DC current gain: hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 40 mA)


    Original     		PDF 2SC4685

    C4685

    Abstract: 2SC4685
    Text: 2SC4685 東芝トランジスタ シリコンNPNエピタキシャル形 2SC4685 ○ ストロボフラッシュ用 ○ 中電力増幅用 • • 単位: mm 直流電流増幅率が高い。: hFE 1 = 800~3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A)


    Original     		PDF 2SC4685 20070701-JA C4685 2SC4685

    2SC4685

    Abstract: C4685
    Text: 2SC4685 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4685 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain: hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 250 (VCE = 2 V, IC = 4 A) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 40


    Original     		PDF 2SC4685 2SC4685 C4685

    C4685

    Abstract: 2SC4685
    Text: 2SC4685 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4685 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm • High DC current gain: hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 40 mA)


    Original     		PDF 2SC4685 C4685 2SC4685

    C4685

    Abstract: No abstract text available
    Text: 2SC4685 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4685 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm • High DC current gain: hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 40


    Original     		PDF 2SC4685 C4685

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    C2785

    Abstract: transistor B1202 transistor c2785 c2785 transistor transistor a1175 a1175 transistor M9-1-473J M9-1-332J MD910 printer mechanism TC74HC14P
    Text: Service Manual DOT MATRIX PRINTER MODEL iDP3110 Rev. 1.00 Newly issued on Oct, 1994 iDP3110 Service Manual REVISION Rev.No. Rev.1.00 Date Oct 1994 Comment Newly issued CITIZEN iDP3110 Service Manual Contents 1. How to remove the Upper Cover. 1


    Original     		PDF iDP3110 iDP3110 PST520E PST600E 1S1588 47K-8 74HC373 CBM-909PC-2D C-0608 C2785 transistor B1202 transistor c2785 c2785 transistor transistor a1175 a1175 transistor M9-1-473J M9-1-332J MD910 printer mechanism TC74HC14P

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943

    2sC5200, 2SA1943

    Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
    Text: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4


    Original     		PDF TTC003 SC-64) BCJ0016F BCJ0016E 2sC5200, 2SA1943 TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N

    2SC4685

    Abstract: No abstract text available
    Text: TO SH IBA 2SC4685 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS. SILICON NPN EPITAXIAL TYPE 2SC4685 MEDIUM POWER AMPLIFIER APPLICATIONS. • High DC Current Gain : hpE 1 —800~320u (Vc e = 2V> Ic = 0-5A) •• • • H i (z j — nv/n« '> >."•“ “ •/ v *


    OCR Scan     		PDF 2SC4685 2SC4685

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4685 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS. SILICON NPN EPITAXIAL TYPE 2SC4685 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS. • High DC Current Gain ^FE 1 —800~3200 (VcE = 2V, Ic = 0.5A) hFE (2) —250 (Min.) (V£ e = 2V, Ic = 4A)


    OCR Scan     		PDF 2SC4685 961001EAA2'

    2SC4685

    Abstract: No abstract text available
    Text: TO SH IBA 2SC4685 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE 2SC4685 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS 8.3 MAX. 0 3.1 ±0.1 5.8 • • • High DC Current Gain : hF E 1 = 800-3200 (VCE = 2V, IC = 0.5A) : hFE(2) = 250 (Min.) (VCE = 2V, IC = 4A)


    OCR Scan     		PDF 2SC4685 25truments, 2SC4685

    2SC4685

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4685 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS. SILICON NPN EPITAXIAL TYPE 2SC4685 Unit in mm MEDIUM PO W ER AM PLIFIER APPLICATIONS. ¿3.1 ±0.1 5.8 • High DC Current Gain : hF E l = 800-3200 (V c e =2V, IC = 0.5A) : hjrE( 2) = 250 (Min.) (V ce = 2V, Ic = 4A)


    OCR Scan     		PDF 2SC4685 Temperat25Â 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TY P E 2SC4685 U nit in mm STROBE FLASH APPLICATIONS. M E D IU M POW ER AMPLIFIER APPLICATIONS. • High DC C urrent Gain : hF E l = 800-3200 ( V = 2V, Ic = 0.5A) : hpE (2) = 250 (Min.) (V ce= 2V , Ic = 4A) Low Saturation Voltage : v CE(sat) = 0-5V (Max.) (Ic = 4A, Ig = 40mA)


    OCR Scan     		PDF 2SC4685

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4685 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4685 Unit in mm STROBE FLASH APPLICATIONS. M EDIUM PO W ER AM PLIFIER APPLICATIONS. ¿3.1 ±0.1 5.8 • • • High DC Current Gain : h F E l = 800-3200 (V c e = 2V, IC = 0.5A) : hFE(2) = 250 (Min.) (V c e = 2V> Ic = 4A)


    OCR Scan     		PDF 2SC4685 961001EAA2'

    A1241

    Abstract: c4684 2_s transistors c3072 B834 SA1357 c4793
    Text: S urface Mo unt Device 4 Power Mold Transistors (D PACK) E lectrical C h a ra cte ristics {T a= 2 5°C ) A p plication T yp e No. VCEO (V) Ic (A) Pc (W ) Pc* (W ) Tj (°C) C o m plem en tary 2 S A 1225 D rive r stage. Pow er am plification. -160 -1.5 1.0


    OCR Scan     		PDF A1241 2SD1221 2SC4681 2SC4685 c4684 2_s transistors c3072 B834 SA1357 c4793

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


    OCR Scan     		PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346

    2sC5200, 2SA1943, 2sc5198

    Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
    Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428


    OCR Scan     		PDF 2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


    OCR Scan     		PDF O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497

    TA8172AF

    Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
    Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16


    OCR Scan     		PDF 015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P

    TO-3P

    Abstract: 2SC3303 2sc3783 2sc3233 2sc2562 2sa1329 2sd717 2sc2655 2sb754
    Text: Transistors Industrial use Regulator T ransistors F1 Appli­ cation £ 3 9 Max Rating (Tc=25"C) Type No. V obo{V) VCHO(V) 10(A) Appli­ cation Package Pc(W) TJCO Max Rating (Tc=25*C) Type No. V c b o (V) VCEO(V) Package lc(A) Pc(W) 2SC3075 0.8 10 Power Mold


    OCR Scan     		PDF 2SC3075 2SC3425 2SC3233 2SC507S 2SC4917 O-126 O-220AB T0-220 TO-3P 2SC3303 2sc3783 2sc2562 2sa1329 2sd717 2sc2655 2sb754